Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
33798 | 120 | 11.4 | 50% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
10 | 4 | OPTICS//PHYSICS, PARTICLES & FIELDS//PHYSICS, MULTIDISCIPLINARY | 1131262 |
185 | 3 | IEEE PHOTONICS TECHNOLOGY LETTERS//OPTICS//JOURNAL OF LIGHTWAVE TECHNOLOGY | 56126 |
372 | 2 | SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//VERTICAL CAVITY SURFACE EMITTING LASERS | 17248 |
33798 | 1 | OPT TRANSMISS COMPONENTS//DIEE INFM//TRANSMISS DEVICES RD S | 120 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | OPT TRANSMISS COMPONENTS | address | 763390 | 3% | 100% | 3 |
2 | DIEE INFM | address | 458031 | 3% | 60% | 3 |
3 | TRANSMISS DEVICES RD S | address | 377828 | 6% | 21% | 7 |
4 | 098 MU M SEMICONDUCTOR LASER | authKW | 254463 | 1% | 100% | 1 |
5 | CLEAVED COUPLED CAVITY | authKW | 254463 | 1% | 100% | 1 |
6 | ELECT DIIIE | address | 254463 | 1% | 100% | 1 |
7 | FABRY PEROT DIODE LASER | authKW | 254463 | 1% | 100% | 1 |
8 | FABRY PEROT FP LASER DIODES | authKW | 254463 | 1% | 100% | 1 |
9 | FACET PASSIVATION | authKW | 254463 | 1% | 100% | 1 |
10 | INGAP HETEROJUNCTION BIPOLAR TRANSISTOR HBT | authKW | 254463 | 1% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 908 | 51% | 0% | 61 |
2 | Physics, Applied | 834 | 53% | 0% | 64 |
3 | Optics | 601 | 30% | 0% | 36 |
4 | Nanoscience & Nanotechnology | 167 | 13% | 0% | 16 |
5 | Telecommunications | 82 | 8% | 0% | 9 |
6 | Physics, Condensed Matter | 12 | 8% | 0% | 9 |
7 | Engineering, General | 3 | 2% | 0% | 2 |
8 | Physics, Multidisciplinary | 1 | 3% | 0% | 4 |
9 | Engineering, Industrial | 1 | 1% | 0% | 1 |
10 | Engineering, Manufacturing | 1 | 1% | 0% | 1 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | OPT TRANSMISS COMPONENTS | 763390 | 3% | 100% | 3 |
2 | DIEE INFM | 458031 | 3% | 60% | 3 |
3 | TRANSMISS DEVICES RD S | 377828 | 6% | 21% | 7 |
4 | ELECT DIIIE | 254463 | 1% | 100% | 1 |
5 | INTEGRATED CIRCUIT PROC ENGN | 254463 | 1% | 100% | 1 |
6 | MCP NMC | 254463 | 1% | 100% | 1 |
7 | TELEMICROSCOPY | 203568 | 2% | 40% | 2 |
8 | ORTEL | 127231 | 1% | 50% | 1 |
9 | ANAL TECHNOL | 121042 | 6% | 7% | 7 |
10 | SEMICOND TECHNOL RD S | 116319 | 3% | 11% | 4 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | MICROELECTRONICS RELIABILITY | 7202 | 12% | 0% | 14 |
2 | PHILIPS TECHNICAL REVIEW | 3179 | 1% | 1% | 1 |
3 | IEEE JOURNAL OF QUANTUM ELECTRONICS | 2986 | 8% | 0% | 10 |
4 | IEE PROCEEDINGS-J OPTOELECTRONICS | 2143 | 2% | 0% | 2 |
5 | UKRAINSKII FIZICHESKII ZHURNAL | 1233 | 3% | 0% | 4 |
6 | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 949 | 2% | 0% | 2 |
7 | IEEE SPECTRUM | 664 | 2% | 0% | 2 |
8 | ELECTRONICS LETTERS | 517 | 8% | 0% | 9 |
9 | JAPANESE JOURNAL OF APPLIED PHYSICS | 395 | 4% | 0% | 5 |
10 | JOURNAL OF OPTICS-NOUVELLE REVUE D OPTIQUE | 389 | 1% | 0% | 1 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | NEITZERT, HC , (2010) ESD SENSITIVITY OF ALGAAS AND INGAASP BASED FABRY-PEROT LASER DIODES.MICROELECTRONICS RELIABILITY. VOL. 50. ISSUE 9-11. P. 1563 -1567 | 8 | 80% | 0 |
2 | NEITZERT, HC , LANDI, G , (2014) TEMPERATURE DEPENDENT OPTOELECTRONIC PROPERTIES OF A NON-INTENTIONALLY CREATED CLEAVED-COUPLED-CAVITY LASER.MICROELECTRONICS RELIABILITY. VOL. 54. ISSUE 9-10. P. 2142 -2146 | 8 | 57% | 0 |
3 | VANZI, M , MURA, G , MARCELLO, G , XIAO, K , (2016) ESD TESTS ON 850 NM GAAS-BASED VCSELS.MICROELECTRONICS RELIABILITY. VOL. 64. ISSUE . P. 617 -622 | 4 | 100% | 0 |
4 | SUN, MY , LU, YC , (2005) A NEW ESD PROTECTION STRUCTURE FOR HIGH-SPEED GAAS RF ICS.IEEE ELECTRON DEVICE LETTERS. VOL. 26. ISSUE 3. P. 133-135 | 5 | 100% | 9 |
5 | ICHIKAWA, H , KUMAGAI, A , HAMADA, K , YAMAGUCHI, A , NAKABAYASHI, T , (2009) ANALYSIS OF REVERSE-BIASED ELECTROSTATIC-DISCHARGE-INDUCED DEGRADATION OF GAINASP/INP BURIED HETEROSTRUCTURE LASER DIODE.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 48. ISSUE 2. P. - | 4 | 100% | 2 |
6 | ICHIKAWA, H , HAMADA, K , YAMAGUCHI, A , NAKABAYASHI, T , (2009) RELATIONSHIP BETWEEN REVERSE-BIASED ELECTROSTATIC-DISCHARGE TOLERANCE AND AGING OF GAINASP/INP BURIED-HETEROSTRUCTURE LASER DIODES.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 48. ISSUE 4. P. - | 6 | 67% | 0 |
7 | HAYWARD, JE , CASSIDY, DT , (1993) CORRELATION BETWEEN EXPERIMENTS TO MEASURE SCATTERING CENTERS IN 1.3-MU-M SEMICONDUCTOR DIODE-LASERS.IEEE JOURNAL OF QUANTUM ELECTRONICS. VOL. 29. ISSUE 7. P. 2173-2177 | 8 | 80% | 2 |
8 | CHIU, HC , CHENG, CS , KAO, HL , FU, JS , CUI, Q , LIOU, JJ , (2011) A FULLY ON-CHIP ESD PROTECTION UWB-BAND LOW NOISE AMPLIFIER USING GAAS ENHANCEMENT-MODE DUAL-GATE PHEMT TECHNOLOGY.MICROELECTRONICS RELIABILITY. VOL. 51. ISSUE 12. P. 2137 -2142 | 5 | 71% | 0 |
9 | CASSIDY, DT , PETERS, FH , (1992) SPONTANEOUS EMISSION, SCATTERING, AND THE SPECTRAL PROPERTIES OF SEMICONDUCTOR DIODE-LASERS.IEEE JOURNAL OF QUANTUM ELECTRONICS. VOL. 28. ISSUE 4. P. 785-791 | 11 | 58% | 4 |
10 | ICHIKAWA, H , MATSUKAWA, S , HAMADA, K , IKOMA, N , NAKABAYASHI, T , (2009) ELECTROSTATIC-DISCHARGE-INDUCED DEGRADATION OF 1.3 MU M ALGAINAS/INP BURIED HETEROSTRUCTURE LASER DIODES.JOURNAL OF APPLIED PHYSICS. VOL. 106. ISSUE 8. P. - | 5 | 63% | 3 |
Classes with closest relation at Level 1 |