Class information for:
Level 1: OPT TRANSMISS COMPONENTS//DIEE INFM//TRANSMISS DEVICES RD S

Basic class information

Class id #P Avg. number of
references
Database coverage
of references
33798 120 11.4 50%



Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes

The table includes all classes above and classes immediately below the current class.



Cluster id Level Cluster label #P
10 4 OPTICS//PHYSICS, PARTICLES & FIELDS//PHYSICS, MULTIDISCIPLINARY 1131262
185 3       IEEE PHOTONICS TECHNOLOGY LETTERS//OPTICS//JOURNAL OF LIGHTWAVE TECHNOLOGY 56126
372 2             SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//VERTICAL CAVITY SURFACE EMITTING LASERS 17248
33798 1                   OPT TRANSMISS COMPONENTS//DIEE INFM//TRANSMISS DEVICES RD S 120

Terms with highest relevance score



rank Term termType Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 OPT TRANSMISS COMPONENTS address 763390 3% 100% 3
2 DIEE INFM address 458031 3% 60% 3
3 TRANSMISS DEVICES RD S address 377828 6% 21% 7
4 098 MU M SEMICONDUCTOR LASER authKW 254463 1% 100% 1
5 CLEAVED COUPLED CAVITY authKW 254463 1% 100% 1
6 ELECT DIIIE address 254463 1% 100% 1
7 FABRY PEROT DIODE LASER authKW 254463 1% 100% 1
8 FABRY PEROT FP LASER DIODES authKW 254463 1% 100% 1
9 FACET PASSIVATION authKW 254463 1% 100% 1
10 INGAP HETEROJUNCTION BIPOLAR TRANSISTOR HBT authKW 254463 1% 100% 1

Web of Science journal categories



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 Engineering, Electrical & Electronic 908 51% 0% 61
2 Physics, Applied 834 53% 0% 64
3 Optics 601 30% 0% 36
4 Nanoscience & Nanotechnology 167 13% 0% 16
5 Telecommunications 82 8% 0% 9
6 Physics, Condensed Matter 12 8% 0% 9
7 Engineering, General 3 2% 0% 2
8 Physics, Multidisciplinary 1 3% 0% 4
9 Engineering, Industrial 1 1% 0% 1
10 Engineering, Manufacturing 1 1% 0% 1

Address terms



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 OPT TRANSMISS COMPONENTS 763390 3% 100% 3
2 DIEE INFM 458031 3% 60% 3
3 TRANSMISS DEVICES RD S 377828 6% 21% 7
4 ELECT DIIIE 254463 1% 100% 1
5 INTEGRATED CIRCUIT PROC ENGN 254463 1% 100% 1
6 MCP NMC 254463 1% 100% 1
7 TELEMICROSCOPY 203568 2% 40% 2
8 ORTEL 127231 1% 50% 1
9 ANAL TECHNOL 121042 6% 7% 7
10 SEMICOND TECHNOL RD S 116319 3% 11% 4

Journals



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 MICROELECTRONICS RELIABILITY 7202 12% 0% 14
2 PHILIPS TECHNICAL REVIEW 3179 1% 1% 1
3 IEEE JOURNAL OF QUANTUM ELECTRONICS 2986 8% 0% 10
4 IEE PROCEEDINGS-J OPTOELECTRONICS 2143 2% 0% 2
5 UKRAINSKII FIZICHESKII ZHURNAL 1233 3% 0% 4
6 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 949 2% 0% 2
7 IEEE SPECTRUM 664 2% 0% 2
8 ELECTRONICS LETTERS 517 8% 0% 9
9 JAPANESE JOURNAL OF APPLIED PHYSICS 395 4% 0% 5
10 JOURNAL OF OPTICS-NOUVELLE REVUE D OPTIQUE 389 1% 0% 1

Author Key Words



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
LCSH search Wikipedia search
1 098 MU M SEMICONDUCTOR LASER 254463 1% 100% 1 Search 098+MU+M+SEMICONDUCTOR+LASER Search 098+MU+M+SEMICONDUCTOR+LASER
2 CLEAVED COUPLED CAVITY 254463 1% 100% 1 Search CLEAVED+COUPLED+CAVITY Search CLEAVED+COUPLED+CAVITY
3 FABRY PEROT DIODE LASER 254463 1% 100% 1 Search FABRY+PEROT+DIODE+LASER Search FABRY+PEROT+DIODE+LASER
4 FABRY PEROT FP LASER DIODES 254463 1% 100% 1 Search FABRY+PEROT+FP+LASER+DIODES Search FABRY+PEROT+FP+LASER+DIODES
5 FACET PASSIVATION 254463 1% 100% 1 Search FACET+PASSIVATION Search FACET+PASSIVATION
6 INGAP HETEROJUNCTION BIPOLAR TRANSISTOR HBT 254463 1% 100% 1 Search INGAP+HETEROJUNCTION+BIPOLAR+TRANSISTOR+HBT Search INGAP+HETEROJUNCTION+BIPOLAR+TRANSISTOR+HBT
7 MODE MISSING 254463 1% 100% 1 Search MODE+MISSING Search MODE+MISSING
8 OPTICAL VIDEO DISTRIBUTION 254463 1% 100% 1 Search OPTICAL+VIDEO+DISTRIBUTION Search OPTICAL+VIDEO+DISTRIBUTION
9 OUTPUT MODE NUMBER 254463 1% 100% 1 Search OUTPUT+MODE+NUMBER Search OUTPUT+MODE+NUMBER
10 WAVE GUIDE DEFECTS 254463 1% 100% 1 Search WAVE+GUIDE+DEFECTS Search WAVE+GUIDE+DEFECTS

Core articles

The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.



Rank Reference # ref.
in cl.
Shr. of ref. in
cl.
Citations
1 NEITZERT, HC , (2010) ESD SENSITIVITY OF ALGAAS AND INGAASP BASED FABRY-PEROT LASER DIODES.MICROELECTRONICS RELIABILITY. VOL. 50. ISSUE 9-11. P. 1563 -1567 8 80% 0
2 NEITZERT, HC , LANDI, G , (2014) TEMPERATURE DEPENDENT OPTOELECTRONIC PROPERTIES OF A NON-INTENTIONALLY CREATED CLEAVED-COUPLED-CAVITY LASER.MICROELECTRONICS RELIABILITY. VOL. 54. ISSUE 9-10. P. 2142 -2146 8 57% 0
3 VANZI, M , MURA, G , MARCELLO, G , XIAO, K , (2016) ESD TESTS ON 850 NM GAAS-BASED VCSELS.MICROELECTRONICS RELIABILITY. VOL. 64. ISSUE . P. 617 -622 4 100% 0
4 SUN, MY , LU, YC , (2005) A NEW ESD PROTECTION STRUCTURE FOR HIGH-SPEED GAAS RF ICS.IEEE ELECTRON DEVICE LETTERS. VOL. 26. ISSUE 3. P. 133-135 5 100% 9
5 ICHIKAWA, H , KUMAGAI, A , HAMADA, K , YAMAGUCHI, A , NAKABAYASHI, T , (2009) ANALYSIS OF REVERSE-BIASED ELECTROSTATIC-DISCHARGE-INDUCED DEGRADATION OF GAINASP/INP BURIED HETEROSTRUCTURE LASER DIODE.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 48. ISSUE 2. P. - 4 100% 2
6 ICHIKAWA, H , HAMADA, K , YAMAGUCHI, A , NAKABAYASHI, T , (2009) RELATIONSHIP BETWEEN REVERSE-BIASED ELECTROSTATIC-DISCHARGE TOLERANCE AND AGING OF GAINASP/INP BURIED-HETEROSTRUCTURE LASER DIODES.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 48. ISSUE 4. P. - 6 67% 0
7 HAYWARD, JE , CASSIDY, DT , (1993) CORRELATION BETWEEN EXPERIMENTS TO MEASURE SCATTERING CENTERS IN 1.3-MU-M SEMICONDUCTOR DIODE-LASERS.IEEE JOURNAL OF QUANTUM ELECTRONICS. VOL. 29. ISSUE 7. P. 2173-2177 8 80% 2
8 CHIU, HC , CHENG, CS , KAO, HL , FU, JS , CUI, Q , LIOU, JJ , (2011) A FULLY ON-CHIP ESD PROTECTION UWB-BAND LOW NOISE AMPLIFIER USING GAAS ENHANCEMENT-MODE DUAL-GATE PHEMT TECHNOLOGY.MICROELECTRONICS RELIABILITY. VOL. 51. ISSUE 12. P. 2137 -2142 5 71% 0
9 CASSIDY, DT , PETERS, FH , (1992) SPONTANEOUS EMISSION, SCATTERING, AND THE SPECTRAL PROPERTIES OF SEMICONDUCTOR DIODE-LASERS.IEEE JOURNAL OF QUANTUM ELECTRONICS. VOL. 28. ISSUE 4. P. 785-791 11 58% 4
10 ICHIKAWA, H , MATSUKAWA, S , HAMADA, K , IKOMA, N , NAKABAYASHI, T , (2009) ELECTROSTATIC-DISCHARGE-INDUCED DEGRADATION OF 1.3 MU M ALGAINAS/INP BURIED HETEROSTRUCTURE LASER DIODES.JOURNAL OF APPLIED PHYSICS. VOL. 106. ISSUE 8. P. - 5 63% 3

Classes with closest relation at Level 1



Rank Class id link
1 8328 HIGH POWER LASER DIODE//CATASTROPHIC OPTICAL DAMAGE//SEMICONDUCTOR LASERS
2 6674 IEEE JOURNAL OF QUANTUM ELECTRONICS//EMCORE//FLARED STRIPE
3 3223 DISTRIBUTED FEEDBACK LASERS//MICROWAVE PHOTON TECHNOL//TUNABLE LASER
4 10961 ELECTROSTATIC DISCHARGE ESD//SILICON CONTROLLED RECTIFIER SCR//NANOELECT GIGASCALE SYST
5 3318 OPTICAL FEEDBACK//IEEE JOURNAL OF QUANTUM ELECTRONICS//SEMICONDUCTOR LASERS
6 14914 SILC BLD//IEE PROCEEDINGS-J OPTOELECTRONICS//BISTABLE LASER DIODE
7 2193 QUANTUM WELL LASERS//SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS
8 14254 ADV TELECOMMUN QUANTUM ELECT//HIROSHIMA BRANCH//EXCESS QUANTUM NOISE
9 26048 BELOW GAP EXCITATION//OPT PL SCI TECH INGN//PHOTON RECYCLING
10 29202 CEA SPE OMETRIE PHYS//ATMEL ROUSSET//CMOS DEV

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