Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
8328 | 1266 | 14.9 | 65% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
10 | 4 | OPTICS//PHYSICS, PARTICLES & FIELDS//PHYSICS, MULTIDISCIPLINARY | 1131262 |
185 | 3 | IEEE PHOTONICS TECHNOLOGY LETTERS//OPTICS//JOURNAL OF LIGHTWAVE TECHNOLOGY | 56126 |
372 | 2 | SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//VERTICAL CAVITY SURFACE EMITTING LASERS | 17248 |
8328 | 1 | HIGH POWER LASER DIODE//CATASTROPHIC OPTICAL DAMAGE//SEMICONDUCTOR LASERS | 1266 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | HIGH POWER LASER DIODE | authKW | 195335 | 1% | 45% | 18 |
2 | CATASTROPHIC OPTICAL DAMAGE | authKW | 182385 | 1% | 69% | 11 |
3 | SEMICONDUCTOR LASERS | authKW | 128501 | 12% | 4% | 148 |
4 | HIGH POWER DIODE LASERS | authKW | 116718 | 1% | 44% | 11 |
5 | THYRISTOR HETEROSTRUCTURE | authKW | 96472 | 0% | 100% | 4 |
6 | LASER DIODE BAR | authKW | 93016 | 1% | 43% | 9 |
7 | CATASTROPHIC OPTICAL DEGRADATION | authKW | 77176 | 0% | 80% | 4 |
8 | LASER THYRISTOR | authKW | 72354 | 0% | 100% | 3 |
9 | STELMAKH POLYUS | address | 72354 | 0% | 100% | 3 |
10 | OPTOELECT TECHNOL DEV | address | 69508 | 1% | 41% | 7 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 10217 | 57% | 0% | 724 |
2 | Engineering, Electrical & Electronic | 6096 | 41% | 0% | 521 |
3 | Optics | 4033 | 24% | 0% | 307 |
4 | Physics, Condensed Matter | 1078 | 17% | 0% | 215 |
5 | Physics, Multidisciplinary | 85 | 6% | 0% | 70 |
6 | Materials Science, Multidisciplinary | 69 | 9% | 0% | 112 |
7 | Nanoscience & Nanotechnology | 37 | 3% | 0% | 36 |
8 | Telecommunications | 31 | 2% | 0% | 25 |
9 | Crystallography | 29 | 2% | 0% | 25 |
10 | Materials Science, Characterization, Testing | 13 | 1% | 0% | 7 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | STELMAKH POLYUS | 72354 | 0% | 100% | 3 |
2 | OPTOELECT TECHNOL DEV | 69508 | 1% | 41% | 7 |
3 | EQUIPE THERMOPHYS INTER ES MICROSYST | 48236 | 0% | 100% | 2 |
4 | ENGN OPTOELECT DEVICES | 47261 | 1% | 28% | 7 |
5 | FERDINAND BRAUN | 40351 | 2% | 8% | 22 |
6 | REED PHOTON | 39417 | 1% | 15% | 11 |
7 | PHYSICOTECH SCI | 36174 | 0% | 50% | 3 |
8 | LASER DIODES | 32156 | 0% | 67% | 2 |
9 | MIYANODAI TECHNOL DEV | 29930 | 0% | 21% | 6 |
10 | COBRA INTERUNIV COMMUN TECHNOLEEA | 24118 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SEMICONDUCTORS | 35741 | 8% | 1% | 100 |
2 | QUANTUM ELECTRONICS | 34157 | 6% | 2% | 77 |
3 | IEEE JOURNAL OF QUANTUM ELECTRONICS | 8510 | 4% | 1% | 55 |
4 | IEEE PHOTONICS TECHNOLOGY LETTERS | 8301 | 6% | 0% | 75 |
5 | ELECTRONICS LETTERS | 5457 | 8% | 0% | 95 |
6 | IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 5340 | 2% | 1% | 30 |
7 | APPLIED PHYSICS LETTERS | 5122 | 12% | 0% | 155 |
8 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 3659 | 3% | 0% | 35 |
9 | TECHNICAL PHYSICS LETTERS | 2881 | 2% | 0% | 28 |
10 | OPTICAL AND QUANTUM ELECTRONICS | 2395 | 2% | 1% | 20 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HIGH POWER LASER DIODE | 195335 | 1% | 45% | 18 | Search HIGH+POWER+LASER+DIODE | Search HIGH+POWER+LASER+DIODE |
2 | CATASTROPHIC OPTICAL DAMAGE | 182385 | 1% | 69% | 11 | Search CATASTROPHIC+OPTICAL+DAMAGE | Search CATASTROPHIC+OPTICAL+DAMAGE |
3 | SEMICONDUCTOR LASERS | 128501 | 12% | 4% | 148 | Search SEMICONDUCTOR+LASERS | Search SEMICONDUCTOR+LASERS |
4 | HIGH POWER DIODE LASERS | 116718 | 1% | 44% | 11 | Search HIGH+POWER+DIODE+LASERS | Search HIGH+POWER+DIODE+LASERS |
5 | THYRISTOR HETEROSTRUCTURE | 96472 | 0% | 100% | 4 | Search THYRISTOR+HETEROSTRUCTURE | Search THYRISTOR+HETEROSTRUCTURE |
6 | LASER DIODE BAR | 93016 | 1% | 43% | 9 | Search LASER+DIODE+BAR | Search LASER+DIODE+BAR |
7 | CATASTROPHIC OPTICAL DEGRADATION | 77176 | 0% | 80% | 4 | Search CATASTROPHIC+OPTICAL+DEGRADATION | Search CATASTROPHIC+OPTICAL+DEGRADATION |
8 | LASER THYRISTOR | 72354 | 0% | 100% | 3 | Search LASER+THYRISTOR | Search LASER+THYRISTOR |
9 | HETEROLASER | 66990 | 0% | 56% | 5 | Search HETEROLASER | Search HETEROLASER |
10 | INTERNAL OPTICAL LOSS | 64312 | 0% | 67% | 4 | Search INTERNAL+OPTICAL+LOSS | Search INTERNAL+OPTICAL+LOSS |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | TOMM, JW , ZIEGLER, M , HEMPEL, M , ELSAESSER, T , (2011) MECHANISMS AND FAST KINETICS OF THE CATASTROPHIC OPTICAL DAMAGE (COD) IN GAAS-BASED DIODE LASERS.LASER & PHOTONICS REVIEWS. VOL. 5. ISSUE 3. P. 422 -441 | 104 | 81% | 15 |
2 | ANDREEV, AY , ZORINA, SA , LESHKO, AY , LYUTETSKIY, AV , MARMALYUK, AA , MURASHOVA, AV , NALET, TA , PADALITSA, AA , PIKHTIN, NA , SABITOV, DR , ET AL (2009) HIGH-POWER LASERS (GAMMA=808 NM) BASED ON THE ALGAAS/GAAS HETEROSTRUCTURES OF SEPARATE CONFINEMENT.SEMICONDUCTORS. VOL. 43. ISSUE 4. P. 519-523 | 22 | 100% | 2 |
3 | TARASOV, IS , (2010) HIGH-POWER SEMICONDUCTOR SEPARATE-CONFINEMENT DOUBLE HETEROSTRUCTURE LASERS.QUANTUM ELECTRONICS. VOL. 40. ISSUE 8. P. 661-681 | 31 | 62% | 8 |
4 | ERBERT, G , BARWOLFF, A , SEBASTIAN, J , TOMM, J , (2000) HIGH-POWER BROAD-AREA DIODE LASERS AND LASER BARS.HIGH-POWER DIODE LASERS: FUNDAMENTALS, TECHNOLOGY, APPLICATIONS. VOL. 78. ISSUE . P. 173-223 | 32 | 74% | 17 |
5 | JIMENEZ, J , (2003) LASER DIODE RELIABILITY: CRYSTAL DEFECTS AND DEGRADATION MODES.COMPTES RENDUS PHYSIQUE. VOL. 4. ISSUE 6. P. 663-673 | 28 | 74% | 31 |
6 | AVRUTIN, EA , RYVKIN, BS , (2017) THEORY OF DIRECT AND INDIRECT EFFECT OF TWO-PHOTON ABSORPTION ON NONLINEAR OPTICAL LOSSES IN HIGH POWER SEMICONDUCTOR LASERS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 32. ISSUE 1. P. - | 20 | 71% | 0 |
7 | ALUEV, AV , LESHKO, AY , LYUTETSKIY, AV , PIKHTIN, NA , SLIPCHENKO, SO , FETISOVA, NV , CHELNY, AA , SHAMAKHOV, VV , SIMAKOV, VA , TARASOV, IS , (2009) GAINASP/GAINP/ALGAINP MOCVD-GROWN DIODE LASERS EMITTING AT 808 NM.SEMICONDUCTORS. VOL. 43. ISSUE 4. P. 532-536 | 16 | 100% | 0 |
8 | MARMALYUK, AA , ANDREEV, AY , KONYAEV, VP , LADUGIN, MA , LEBEDEVA, EI , MESHKOV, AS , MOROZYUK, AN , SAPOZHNIKOV, SM , DANILOV, AI , SIMAKOV, VA , ET AL (2014) LASER EMITTERS (LAMBDA=808 NM) BASED ON ALGAAS/GAAS HETEROSTRUCTURES.SEMICONDUCTORS. VOL. 48. ISSUE 1. P. 115-119 | 15 | 88% | 0 |
9 | FAN, L , CAO, CS , THALER, G , CALIVA, B , AI, I , DAS, S , WALKER, R , ZENG, LF , MCELHINNEY, M , THIAGARAJAN, P , (2011) RECORD HIGH-TEMPERATURE LONG-PULSE OPERATION OF 8XX-NM DIODE LASER BAR WITH ALUMINUM-FREE ACTIVE REGION.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. VOL. 17. ISSUE 6. P. 1727-1734 | 16 | 84% | 4 |
10 | MENZEL, U , (1998) SELF-CONSISTENT CALCULATION OF FACET HEATING IN ASYMMETRICALLY COATED EDGE EMITTING DIODE LASERS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 13. ISSUE 3. P. 265-276 | 26 | 74% | 14 |
Classes with closest relation at Level 1 |