Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 32757 | 134 | 15.4 | 55% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
| 6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
| 434 | 2 | MICROCRYSTALLINE SILICON//JOURNAL OF NON-CRYSTALLINE SOLIDS//AMORPHOUS SILICON | 16320 |
| 32757 | 1 | CDTE SI HETEROJUNCTION//FUNCTIONALIZED CARBON NANAOTABES//GRP NAZL STRUTTURA MAT UR 24 | 134 |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | CDTE SI HETEROJUNCTION | authKW | 227877 | 1% | 100% | 1 |
| 2 | FUNCTIONALIZED CARBON NANAOTABES | authKW | 227877 | 1% | 100% | 1 |
| 3 | GRP NAZL STRUTTURA MAT UR 24 | address | 227877 | 1% | 100% | 1 |
| 4 | H CONTAINING FREONS | authKW | 227877 | 1% | 100% | 1 |
| 5 | H SOLAR CELLS | authKW | 227877 | 1% | 100% | 1 |
| 6 | HIGH TEMPERATURE PLASMA ETCHING | authKW | 227877 | 1% | 100% | 1 |
| 7 | HYDROGENATED AMORPHOUS SILICON CARBIDE SNO2 INTERFACE | authKW | 227877 | 1% | 100% | 1 |
| 8 | HYDROGENATED SILICON NITRIDE SINX H | authKW | 227877 | 1% | 100% | 1 |
| 9 | IN DOPED CDTE | authKW | 227877 | 1% | 100% | 1 |
| 10 | INFINITE ETCH SELECTIVITY | authKW | 227877 | 1% | 100% | 1 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Physics, Applied | 1282 | 62% | 0% | 83 |
| 2 | Materials Science, Coatings & Films | 1025 | 20% | 0% | 27 |
| 3 | Energy & Fuels | 818 | 25% | 0% | 34 |
| 4 | Materials Science, Multidisciplinary | 409 | 40% | 0% | 53 |
| 5 | Materials Science, Ceramics | 214 | 8% | 0% | 11 |
| 6 | GREEN & SUSTAINABLE SCIENCE & TECHNOLOGY | 62 | 3% | 0% | 4 |
| 7 | Electrochemistry | 54 | 6% | 0% | 8 |
| 8 | Physics, Condensed Matter | 34 | 10% | 0% | 14 |
| 9 | Nanoscience & Nanotechnology | 14 | 4% | 0% | 6 |
| 10 | Optics | 7 | 4% | 0% | 6 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | GRP NAZL STRUTTURA MAT UR 24 | 227877 | 1% | 100% | 1 |
| 2 | PLASMA LASER INTERACT PHYS | 227877 | 1% | 100% | 1 |
| 3 | DEVICE MAT RD GRP | 113938 | 1% | 50% | 1 |
| 4 | SCI POB 40146 | 113938 | 1% | 50% | 1 |
| 5 | STRADALE PRIMOSOLE | 113938 | 1% | 50% | 1 |
| 6 | RDS PLATFORM | 37978 | 1% | 17% | 1 |
| 7 | NO IRELAND BIOENGN | 20712 | 1% | 5% | 2 |
| 8 | PHOTOELECT THIN FILM DEVICE TECH | 16275 | 1% | 7% | 1 |
| 9 | CNR IMM | 10849 | 1% | 5% | 1 |
| 10 | PHOTOELECT INFORMAT SCI TECHNOL | 6700 | 1% | 3% | 1 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | SOLAR CELLS | 8596 | 4% | 1% | 6 |
| 2 | SOLAR ENERGY MATERIALS AND SOLAR CELLS | 7562 | 12% | 0% | 16 |
| 3 | SOLAR ENERGY MATERIALS | 4112 | 3% | 0% | 4 |
| 4 | OPTOELECTRONICS-DEVICES AND TECHNOLOGIES | 2475 | 1% | 1% | 1 |
| 5 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1891 | 7% | 0% | 10 |
| 6 | JOURNAL OF NON-CRYSTALLINE SOLIDS | 1199 | 8% | 0% | 11 |
| 7 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 572 | 4% | 0% | 6 |
| 8 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 476 | 6% | 0% | 8 |
| 9 | RENEWABLE ENERGY | 445 | 3% | 0% | 4 |
| 10 | THIN SOLID FILMS | 392 | 6% | 0% | 8 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | VITALE, SA , BERRY, S , (2013) ETCHING SELECTIVITY OF INDIUM TIN OXIDE TO PHOTORESIST IN HIGH DENSITY CHLORINE- AND ETHYLENE-CONTAINING PLASMAS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 31. ISSUE 2. P. - | 13 | 87% | 3 |
| 2 | KUO, Y , TAI, TL , (1998) HIGH TEMPERATURE REACTIVE ION ETCHING OF INDIUM-TIN OXIDE WITH HBR AND CH4 MIXTURES.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 145. ISSUE 12. P. 4313-4317 | 11 | 85% | 14 |
| 3 | KIM, DY , KO, JH , PARK, MS , LEE, NE , (2008) INFINITELY HIGH ETCH SELECTIVITY DURING CH4/H-2/AR INDUCTIVELY COUPLED PLASMA (ICP) ETCHING OF INDIUM TIN OXIDE (ITO) WITH PHOTORESIST MASK.THIN SOLID FILMS. VOL. 516. ISSUE 11. P. 3512-3516 | 12 | 57% | 8 |
| 4 | LI, H , KARAHASHI, K , FUKASAWA, M , NAGAHATA, K , TATSUMI, T , HAMAGUCHI, S , (2015) SPUTTERING YIELDS AND SURFACE CHEMICAL MODIFICATION OF TIN-DOPED INDIUM OXIDE IN HYDROCARBON-BASED PLASMA ETCHING.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 33. ISSUE 6. P. - | 13 | 43% | 0 |
| 5 | KUO, Y , (1997) ANOMALOUS HIGH RATE REACTIVE ION ETCHING PROCESS FOR INDIUM TIN OXIDE.JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. VOL. 36. ISSUE 5B. P. L629-L631 | 8 | 80% | 3 |
| 6 | KUO, Y , (1998) REACTIVE ION ETCHING OF INDIUM TIN OXIDE BY SICL4- BASED PLASMAS - SUBSTRATE TEMPERATURE EFFECT.VACUUM. VOL. 51. ISSUE 4. P. 777-779 | 6 | 100% | 6 |
| 7 | LIAO, XB , KONG, GL , WANG, YX , ZHENG, HD , ZHANG, Q , (1991) PHOTOEMISSION-STUDY ON THE SNO2/P A-SICX-H INTERFACE.JOURNAL OF NON-CRYSTALLINE SOLIDS. VOL. 137. ISSUE . P. 1091-1094 | 8 | 89% | 1 |
| 8 | LAN, JH , KANICKI, J , CATALANO, A , KEANE, J , DENBOER, W , GU, T , (1996) PATTERNING OF TRANSPARENT CONDUCTING OXIDE THIN FILMS BY WET ETCHING FOR A-SI:H TFT-LCDS.JOURNAL OF ELECTRONIC MATERIALS. VOL. 25. ISSUE 12. P. 1806-1817 | 11 | 50% | 17 |
| 9 | KUO, Y , (1997) HIGH TEMPERATURE REACTIVE LAN ETCHING OF INDIUM-TIN OXIDE.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 144. ISSUE 4. P. 1411-1416 | 7 | 78% | 1 |
| 10 | NAKAMURA, K , IMURA, T , SUGAI, H , OHKUBO, M , ICHIHARA, K , (1994) HIGH-SPEED ETCHING OF INDIUM-TIN-OXIDE THIN-FILMS USING AN INDUCTIVELY-COUPLED PLASMA.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 33. ISSUE 7B. P. 4438-4441 | 6 | 86% | 9 |
Classes with closest relation at Level 1 |