Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
24269 | 318 | 15.0 | 38% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | INTENTIONAL ELECTROMAGNETIC INTERFERENCE IEMI | authKW | 1068764 | 5% | 70% | 16 |
2 | SEMICONDUCTOR BRIDGE | authKW | 672158 | 2% | 100% | 7 |
3 | HIGH POWER ELECTROMAGNETIC HPEM | authKW | 493829 | 2% | 86% | 6 |
4 | SWITCHED OSCILLATOR SWO | authKW | 480113 | 2% | 100% | 5 |
5 | IMPULSE RADIATING ANTENNA | authKW | 432099 | 2% | 75% | 6 |
6 | IMPULSE RADIATING ANTENNAS IRAS | authKW | 384090 | 1% | 100% | 4 |
7 | ELECT ENGN MEASUREMENT SCI | address | 307271 | 1% | 80% | 4 |
8 | ELECTRICAL THERMAL CO SIMULATION | authKW | 307271 | 1% | 80% | 4 |
9 | BIPOLAR PULSE FORMER | authKW | 288068 | 1% | 100% | 3 |
10 | CONFORMAL ELECTRODES | authKW | 288068 | 1% | 100% | 3 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Telecommunications | 7000 | 39% | 0% | 125 |
2 | Engineering, Electrical & Electronic | 3579 | 61% | 0% | 195 |
3 | Physics, Fluids & Plasmas | 917 | 14% | 0% | 43 |
4 | Physics, Applied | 227 | 19% | 0% | 62 |
5 | Instruments & Instrumentation | 194 | 8% | 0% | 27 |
6 | Engineering, General | 98 | 5% | 0% | 15 |
7 | Physics, Multidisciplinary | 58 | 8% | 0% | 25 |
8 | Engineering, Manufacturing | 18 | 2% | 0% | 5 |
9 | Remote Sensing | 10 | 1% | 0% | 3 |
10 | Nanoscience & Nanotechnology | 9 | 3% | 0% | 9 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ELECT ENGN MEASUREMENT SCI | 307271 | 1% | 80% | 4 |
2 | JENOPTIK GRP | 192045 | 1% | 100% | 2 |
3 | MINIST EDUC WIDE BAND G SEMICOND MAT DEVICES | 111892 | 4% | 9% | 13 |
4 | COMPLICATED ELE OMAGNET ENVIRONM | 96023 | 0% | 100% | 1 |
5 | DAMAGE MECH SCB INITIATORS RF | 96023 | 0% | 100% | 1 |
6 | ELE OMAGNET BUSINESS GRP | 96023 | 0% | 100% | 1 |
7 | ELE OMAGNET EFFECT BRANCH | 96023 | 0% | 100% | 1 |
8 | HIGH CURRENT ELECT SB RAS | 96023 | 0% | 100% | 1 |
9 | HIGH POWERED MICROWAVE BRANCH | 96023 | 0% | 100% | 1 |
10 | INFRASTRUCT PLANT ENGN INFORMAT SYST | 96023 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY | 156158 | 22% | 2% | 71 |
2 | IEEE TRANSACTIONS ON PLASMA SCIENCE | 16663 | 13% | 0% | 41 |
3 | JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 6842 | 5% | 0% | 15 |
4 | JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS | 1966 | 3% | 0% | 9 |
5 | IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 1784 | 2% | 0% | 5 |
6 | PROGRESS IN ELECTROMAGNETICS RESEARCH-PIER | 1725 | 2% | 0% | 7 |
7 | SCIENCE AND TECHNOLOGY OF ENERGETIC MATERIALS | 1703 | 1% | 1% | 2 |
8 | IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION | 1602 | 5% | 0% | 15 |
9 | INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 1527 | 3% | 0% | 8 |
10 | ELECTROMAGNETICS | 836 | 1% | 0% | 3 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | ANDREEV, YA , EFREMOV, AM , KOSHELEV, VI , KOVALCHUK, BM , PETKUN, AA , SUKHUSHIN, KN , ZORKALTSEVA, MY , (2014) A SOURCE OF HIGH-POWER PULSES OF ELLIPTICALLY POLARIZED ULTRAWIDEBAND RADIATION.REVIEW OF SCIENTIFIC INSTRUMENTS. VOL. 85. ISSUE 10. P. - | 18 | 86% | 2 |
2 | ANDREEV, YA , EFREMOV, AM , KOSHELEV, VI , KOVALCHUK, BM , PLISKO, VV , SUKHUSHIN, KN , ZORKALTSEVA, MY , (2015) RADIATION OF HIGH-POWER ULTRAWIDEBAND PULSES WITH ELLIPTICAL POLARIZATION BY FOUR-ELEMENT ARRAY OF CYLINDRICAL HELICAL ANTENNAS.LASER AND PARTICLE BEAMS. VOL. 33. ISSUE 4. P. 633 -640 | 18 | 82% | 0 |
3 | CHAI, CC , MA, ZY , REN, XR , YANG, YT , ZHAO, YB , YU, XH , (2013) HARDENING MEASURES FOR BIPOLAR TRANSISTORS AGAINST MICROWAVE-INDUCED DAMAGE.CHINESE PHYSICS B. VOL. 22. ISSUE 6. P. - | 14 | 100% | 3 |
4 | LIU, Y , CHAI, CC , YANG, YT , SUN, J , LI, ZP , (2016) DAMAGE EFFECT AND MECHANISM OF THE GAAS HIGH ELECTRON MOBILITY TRANSISTOR INDUCED BY HIGH POWER MICROWAVE.CHINESE PHYSICS B. VOL. 25. ISSUE 4. P. - | 15 | 83% | 0 |
5 | LIU, Y , CHAI, CC , FAN, QY , SHI, CL , XI, XW , YU, XH , YANG, YT , (2016) KU BAND DAMAGE CHARACTERISTICS OF GAAS PHEMT INDUCED BY A FRONT-DOOR COUPLING MICROWAVE PULSE.MICROELECTRONICS RELIABILITY. VOL. 66. ISSUE . P. 32 -37 | 15 | 75% | 0 |
6 | MA, ZY , CHAI, CC , REN, XR , YANG, YT , QIAO, LP , SHI, CL , (2013) THE DAMAGE EFFECT AND MECHANISM OF THE BIPOLAR TRANSISTOR INDUCED BY DIFFERENT TYPES OF HIGH POWER MICROWAVES.ACTA PHYSICA SINICA. VOL. 62. ISSUE 12. P. - | 12 | 100% | 0 |
7 | MA, ZY , CHAI, CC , REN, XR , YANG, YT , CHEN, B , SONG, K , ZHAO, YB , (2012) MICROWAVE DAMAGE SUSCEPTIBILITY TREND OF A BIPOLAR TRANSISTOR AS A FUNCTION OF FREQUENCY.CHINESE PHYSICS B. VOL. 21. ISSUE 9. P. - | 11 | 100% | 9 |
8 | DU, WQ , ZHOU, B , LIU, JP , LI, Y , WANG, J , (2017) EXPERIMENTS AND SIMULATIONS ON NON-PLASMA IGNITION OF SEMICONDUCTOR BRIDGE IGNITER.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS. VOL. 77. ISSUE 1. P. - | 10 | 91% | 0 |
9 | LIU, Y , YANG, YT , YU, XH , CHAI, CC , (2015) MODELING AND UNDERSTANDING OF THE FREQUENCY DEPENDENT HPM UPSET SUSCEPTIBILITY OF THE CMOS INVERTER.SCIENCE CHINA-INFORMATION SCIENCES. VOL. 58. ISSUE 8. P. - | 11 | 79% | 2 |
10 | YU, XH , FAN, QY , YANG, YT , LIU, SB , LIU, Y , CHAI, CC , XI, XW , (2016) DAMAGE EFFECTS AND MECHANISM OF THE GAN HIGH ELECTRON MOBILITY TRANSISTOR CAUSED BY HIGH ELECTROMAGNETIC PULSE.ACTA PHYSICA SINICA. VOL. 65. ISSUE 3. P. - | 11 | 79% | 0 |
Classes with closest relation at Level 1 |