Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
19410 | 507 | 25.2 | 81% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
279 | 3 | SELF ASSEMBLED MONOLAYER//MOLECULAR ELECTRONICS//NANOSCIENCE & NANOTECHNOLOGY | 42929 |
1730 | 2 | MOLECULAR ELECTRONICS//MOLECULAR JUNCTIONS//NON EQUILIBRIUM GREENS FUNCTION | 6564 |
19410 | 1 | NANOGAP ELECTRODES//NANOGAP//SURFACE CONDUCTION ELECTRON EMITTER | 507 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | NANOGAP ELECTRODES | authKW | 925809 | 6% | 55% | 28 |
2 | NANOGAP | authKW | 719066 | 8% | 30% | 40 |
3 | SURFACE CONDUCTION ELECTRON EMITTER | authKW | 481812 | 2% | 100% | 8 |
4 | ON WIRE LITHOGRAPHY | authKW | 376408 | 2% | 63% | 10 |
5 | FIELD EMISSION CURRENT | authKW | 275314 | 2% | 57% | 8 |
6 | SURFACE CONDUCTION ELECTRON EMISSION | authKW | 180679 | 1% | 100% | 3 |
7 | SURFACE CONDUCTION ELECTRON EMITTER DISPLAY | authKW | 180679 | 1% | 100% | 3 |
8 | SURFACE CONDUCTION ELECTRON EMITTER DISPLAY SED | authKW | 180679 | 1% | 100% | 3 |
9 | PATTERN SIZE REDUCTION | authKW | 135508 | 1% | 75% | 3 |
10 | AL ALN GRANULAR FILMS | authKW | 120453 | 0% | 100% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Nanoscience & Nanotechnology | 8264 | 43% | 0% | 218 |
2 | Physics, Applied | 6136 | 69% | 0% | 351 |
3 | Materials Science, Multidisciplinary | 1537 | 39% | 0% | 200 |
4 | Physics, Condensed Matter | 742 | 21% | 0% | 109 |
5 | Chemistry, Multidisciplinary | 327 | 19% | 0% | 95 |
6 | Engineering, Electrical & Electronic | 326 | 17% | 0% | 86 |
7 | Chemistry, Physical | 302 | 19% | 0% | 95 |
8 | Materials Science, Coatings & Films | 106 | 4% | 0% | 19 |
9 | Electrochemistry | 88 | 4% | 0% | 21 |
10 | Optics | 64 | 6% | 0% | 31 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | PENN STATE NANOFABRICAT IL | 120453 | 0% | 100% | 2 |
2 | RAD HARD CMOS TECHNOL | 80301 | 0% | 67% | 2 |
3 | INT NANOTECHNOL | 67577 | 5% | 5% | 24 |
4 | ANORGAN CHEM FB 8 | 60226 | 0% | 100% | 1 |
5 | AS NANO CORE IL | 60226 | 0% | 100% | 1 |
6 | AUTOMAT ARCHITECTURE SYST | 60226 | 0% | 100% | 1 |
7 | BEAM LINE LILIT ELETT SYNCHROTRON | 60226 | 0% | 100% | 1 |
8 | BIOMED ENGN PROGRAMJOINT COMM | 60226 | 0% | 100% | 1 |
9 | ELECT GRP CORP | 60226 | 0% | 100% | 1 |
10 | GENOMIC PLATFORM TOULOUSE | 60226 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | NANOTECHNOLOGY | 9160 | 8% | 0% | 42 |
2 | NANO LETTERS | 3311 | 5% | 0% | 26 |
3 | SMALL | 3029 | 3% | 0% | 16 |
4 | MICROELECTRONIC ENGINEERING | 2846 | 4% | 0% | 22 |
5 | APPLIED PHYSICS LETTERS | 2626 | 14% | 0% | 70 |
6 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2414 | 5% | 0% | 26 |
7 | JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS | 2225 | 1% | 1% | 3 |
8 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 1205 | 1% | 0% | 6 |
9 | MICROELECTRONICS INTERNATIONAL | 724 | 0% | 1% | 2 |
10 | JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 715 | 1% | 0% | 4 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | ITO, M , MORIHARA, K , TOYONAKA, T , TAKIKAWA, K , SHIRAKASHI, J , (2015) HIGH-THROUGHPUT NANOGAP FORMATION BY FIELD-EMISSION-INDUCED ELECTROMIGRATION.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 33. ISSUE 5. P. - | 23 | 100% | 1 |
2 | CUI, AJ , DONG, HL , HU, WP , (2015) NANOGAP ELECTRODES TOWARDS SOLID STATE SINGLE-MOLECULE TRANSISTORS.SMALL. VOL. 11. ISSUE 46. P. 6115 -6141 | 54 | 37% | 5 |
3 | LI, T , HU, WP , ZHU, DB , (2010) NANOGAP ELECTRODES.ADVANCED MATERIALS. VOL. 22. ISSUE 2. P. 286 -300 | 55 | 32% | 96 |
4 | YAGI, M , SAITO, T , SHIRAKASHI, J , (2015) IN SITU ATOMIC FORCE MICROSCOPY IMAGING OF STRUCTURAL CHANGES IN METAL NANOWIRES DURING FEEDBACK-CONTROLLED ELECTROMIGRATION.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 33. ISSUE 5. P. - | 24 | 80% | 0 |
5 | SUTANTO, J , SMITH, RL , COLLINS, SD , (2010) FABRICATION OF NANO-GAP ELECTRODES AND NANO WIRES USING AN ELECTROCHEMICAL AND CHEMICAL ETCHING TECHNIQUE.JOURNAL OF MICROMECHANICS AND MICROENGINEERING. VOL. 20. ISSUE 4. P. - | 22 | 81% | 5 |
6 | ISHIDA, T , NAITOH, Y , WEI, QS , MUKAIDA, M , (2016) FORMATION OF ACCURATE 1-NM GAPS USING THE ELECTROMIGRATION METHOD DURING METAL DEPOSITION.APPLIED PHYSICS EXPRESS. VOL. 9. ISSUE 3. P. - | 18 | 86% | 0 |
7 | KANAMARU, Y , ANDO, M , SHIRAKASHI, J , (2015) ULTRAFAST FEEDBACK-CONTROLLED ELECTROMIGRATION USING A FIELD-PROGRAMMABLE GATE ARRAY.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 33. ISSUE 2. P. - | 18 | 82% | 1 |
8 | SUGA, H , SUZUKI, H , SHINOMURA, Y , KASHIWABARA, S , TSUKAGOSHI, K , SHIMIZU, T , NAITOH, Y , (2016) HIGHLY STABLE, EXTREMELY HIGH-TEMPERATURE, NONVOLATILE MEMORY BASED ON RESISTANCE SWITCHING IN POLYCRYSTALLINE PT NANOGAPS.SCIENTIFIC REPORTS. VOL. 6. ISSUE . P. - | 25 | 58% | 0 |
9 | PROKOPUK, N , SON, KA , (2008) ALLIGATOR CLIPS TO MOLECULAR DIMENSIONS.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 20. ISSUE 37. P. - | 49 | 34% | 16 |
10 | CUI, A , LIU, Z , DONG, HL , YANG, FX , ZHEN, YG , LI, WX , LI, JJ , GU, CZ , ZHANG, XT , LI, RJ , ET AL (2016) MASS PRODUCTION OF NANOGAP ELECTRODES TOWARD ROBUST RESISTIVE RANDOM ACCESS MEMORY.ADVANCED MATERIALS. VOL. 28. ISSUE 37. P. 8227 -8233 | 24 | 56% | 0 |
Classes with closest relation at Level 1 |