Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
14500 | 766 | 18.4 | 53% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
117 | 3 | MATERIALS SCIENCE, CERAMICS//ELECT ENGN OPTOELECT TECHNOL//JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 69464 |
3285 | 2 | ELECT ENGN OPTOELECT TECHNOL//GAAS PHOTOCATHODE//EUTECTIC CERAMICS | 1882 |
14500 | 1 | ELECT ENGN OPTOELECT TECHNOL//GAAS PHOTOCATHODE//GAN PHOTOCATHODE | 766 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | ELECT ENGN OPTOELECT TECHNOL | address | 2691947 | 17% | 51% | 132 |
2 | GAAS PHOTOCATHODE | authKW | 1240274 | 4% | 94% | 33 |
3 | GAN PHOTOCATHODE | authKW | 677654 | 2% | 100% | 17 |
4 | EXPONENTIAL DOPING | authKW | 398620 | 1% | 100% | 10 |
5 | POLARIZED ELECTRON SOURCE | authKW | 293526 | 1% | 82% | 9 |
6 | PHOTOCATHODE | authKW | 280351 | 6% | 15% | 47 |
7 | NEGATIVE ELECTRON AFFINITY | authKW | 252434 | 2% | 33% | 19 |
8 | CS O ACTIVATION | authKW | 239172 | 1% | 100% | 6 |
9 | LOW LIGHT LEVEL TECHNOL | address | 217023 | 1% | 78% | 7 |
10 | ENGN NEW ENERGY TECHNOL JIANGXI PROV | address | 199310 | 1% | 100% | 5 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 2529 | 38% | 0% | 290 |
2 | Physics, Condensed Matter | 1220 | 22% | 0% | 171 |
3 | Physics, Multidisciplinary | 992 | 18% | 0% | 136 |
4 | Optics | 790 | 14% | 0% | 111 |
5 | Instruments & Instrumentation | 483 | 9% | 0% | 66 |
6 | Materials Science, Coatings & Films | 357 | 5% | 0% | 41 |
7 | Spectroscopy | 296 | 6% | 0% | 46 |
8 | Physics, Nuclear | 288 | 7% | 0% | 50 |
9 | Physics, Particles & Fields | 247 | 7% | 0% | 52 |
10 | Nuclear Science & Technology | 169 | 5% | 0% | 39 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ELECT ENGN OPTOELECT TECHNOL | 2691947 | 17% | 51% | 132 |
2 | LOW LIGHT LEVEL TECHNOL | 217023 | 1% | 78% | 7 |
3 | ENGN NEW ENERGY TECHNOL JIANGXI PROV | 199310 | 1% | 100% | 5 |
4 | ELECT ENGN OPTO ELECT TECHNOL | 159448 | 1% | 100% | 4 |
5 | ENGN NUCL TECHNOL PLICAT | 141847 | 1% | 32% | 11 |
6 | ENGN NEW ENERGY TECHNOL EQUIPMENT JIANG | 127557 | 1% | 80% | 4 |
7 | ELE ON ELECT | 119586 | 0% | 100% | 3 |
8 | ELECT OPT ENGN | 117037 | 5% | 8% | 37 |
9 | AICHI SYNCHROTRON RADIAT | 71749 | 0% | 60% | 3 |
10 | 442 | 39862 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 4431 | 3% | 0% | 25 |
2 | ACTA PHYSICA SINICA | 3502 | 5% | 0% | 42 |
3 | OPTIK | 3350 | 4% | 0% | 30 |
4 | FIZIKA TVERDOGO TELA | 1892 | 3% | 0% | 23 |
5 | ZHURNAL TEKHNICHESKOI FIZIKI | 1654 | 2% | 0% | 16 |
6 | PHYSICAL REVIEW SPECIAL TOPICS-ACCELERATORS AND BEAMS | 1190 | 1% | 0% | 8 |
7 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1127 | 5% | 0% | 35 |
8 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1023 | 3% | 0% | 21 |
9 | OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 981 | 1% | 0% | 8 |
10 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 940 | 0% | 1% | 2 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GAAS PHOTOCATHODE | 1240274 | 4% | 94% | 33 | Search GAAS+PHOTOCATHODE | Search GAAS+PHOTOCATHODE |
2 | GAN PHOTOCATHODE | 677654 | 2% | 100% | 17 | Search GAN+PHOTOCATHODE | Search GAN+PHOTOCATHODE |
3 | EXPONENTIAL DOPING | 398620 | 1% | 100% | 10 | Search EXPONENTIAL+DOPING | Search EXPONENTIAL+DOPING |
4 | POLARIZED ELECTRON SOURCE | 293526 | 1% | 82% | 9 | Search POLARIZED+ELECTRON+SOURCE | Search POLARIZED+ELECTRON+SOURCE |
5 | PHOTOCATHODE | 280351 | 6% | 15% | 47 | Search PHOTOCATHODE | Search PHOTOCATHODE |
6 | NEGATIVE ELECTRON AFFINITY | 252434 | 2% | 33% | 19 | Search NEGATIVE+ELECTRON+AFFINITY | Search NEGATIVE+ELECTRON+AFFINITY |
7 | CS O ACTIVATION | 239172 | 1% | 100% | 6 | Search CS+O+ACTIVATION | Search CS+O+ACTIVATION |
8 | GAALAS PHOTOCATHODE | 199310 | 1% | 100% | 5 | Search GAALAS+PHOTOCATHODE | Search GAALAS+PHOTOCATHODE |
9 | INTEGRAL SENSITIVITY | 199310 | 1% | 100% | 5 | Search INTEGRAL+SENSITIVITY | Search INTEGRAL+SENSITIVITY |
10 | SURFACE ESCAPE PROBABILITY | 199310 | 1% | 100% | 5 | Search SURFACE+ESCAPE+PROBABILITY | Search SURFACE+ESCAPE+PROBABILITY |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | CHANLEK, N , HERBERT, JD , JONES, RM , JONES, LB , MIDDLEMAN, KJ , MILITSYN, BL , (2015) HIGH STABILITY OF NEGATIVE ELECTRON AFFINITY GALLIUM ARSENIDE PHOTOCATHODES ACTIVATED WITH CS AND NF3.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 48. ISSUE 37. P. - | 28 | 88% | 1 |
2 | CHANLEK, N , HERBERT, JD , JONES, RM , JONES, LB , MIDDLEMAN, KJ , MILITSYN, BL , (2014) THE DEGRADATION OF QUANTUM EFFICIENCY IN NEGATIVE ELECTRON AFFINITY GAAS PHOTOCATHODES UNDER GAS EXPOSURE.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 47. ISSUE 5. P. - | 27 | 79% | 6 |
3 | ZHANG, JJ , CHANG, BK , FU, XQ , DU, YJ , LI, B , ZOU, JJ , (2011) INFLUENCE OF CESIUM ON THE STABILITY OF A GAAS PHOTOCATHODE.CHINESE PHYSICS B. VOL. 20. ISSUE 8. P. - | 20 | 100% | 0 |
4 | ZHANG, YJ , GAN, ZX , ZHANG, H , HUANG, F , XU, Y , FENG, C , (2014) RECESIATION OF GAALAS PHOTOCATHODES IN AN ULTRAHIGH VACUUM SYSTEM.ACTA PHYSICA SINICA. VOL. 63. ISSUE 17. P. - | 19 | 95% | 1 |
5 | CHEN, XL , ZHAO, J , CHANG, BK , HAO, GH , XU, Y , ZHANG, YJ , JIN, MC , (2014) ROLES OF CESIUM AND OXIDES IN THE PROCESSING OF GALLIUM ALUMINUM ARSENIDE PHOTOCATHODES.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 18. ISSUE . P. 122 -127 | 18 | 100% | 0 |
6 | CHEN, XL , HAO, GH , CHANG, BK , ZHANG, YJ , ZHAO, J , XU, Y , JIN, MC , (2013) STABILITY OF NEGATIVE ELECTRON AFFINITY GA0.37AL0.63AS PHOTOCATHODES IN AN ULTRAHIGH VACUUM SYSTEM.APPLIED OPTICS. VOL. 52. ISSUE 25. P. 6272 -6277 | 17 | 100% | 0 |
7 | DENG, WJ , ZOU, JJ , PENG, XC , FENG, L , ZHU, ZF , WANG, WL , ZHANG, YJ , CHANG, BK , (2015) RESOLUTION CHARACTERISTICS OF GRADED DOPING AND GRADED COMPOSITION TRANSMISSION-MODE ALGAAS/GAAS PHOTOCATHODES.APPLIED OPTICS. VOL. 54. ISSUE 6. P. 1414 -1419 | 17 | 94% | 0 |
8 | WANG, HG , FU, XQ , JI, XH , DU, YJ , LIU, J , QIAN, YS , CHANG, BK , (2014) RESOLUTION PROPERTIES OF TRANSMISSION-MODE EXPONENTIAL-DOPING GA0.37AL0.63AS PHOTOCATHODES.APPLIED OPTICS. VOL. 53. ISSUE 27. P. 6230 -6236 | 19 | 86% | 0 |
9 | ZHANG, YJ , NIU, J , ZOU, JJ , CHEN, XL , XU, Y , CHANG, BK , SHI, F , (2014) SURFACE ACTIVATION BEHAVIOR OF NEGATIVE-ELECTRON-AFFINITY EXPONENTIAL-DOPING GAAS PHOTOCATHODES.OPTICS COMMUNICATIONS. VOL. 321. ISSUE . P. 32 -37 | 19 | 83% | 0 |
10 | XU, Y , ZHANG, YJ , FENG, C , SHI, F , ZOU, JJ , CHEN, XL , CHANG, BK , (2016) DIFFERENCES IN STABILITY AND REPEATABILITY BETWEEN GAAS AND GAALAS PHOTOCATHODES.OPTICS COMMUNICATIONS. VOL. 380. ISSUE . P. 320 -325 | 16 | 89% | 0 |
Classes with closest relation at Level 1 |