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IH2653 Simulation of Semiconductor Devices 7,5 hp

Course memo Autumn 2023-50352...

Version 1 – 10/26/2023, 2:25:14 PM

Course offering

Autumn 2023-50352 (Start date 30 Oct 2023, English)
Autumn 2023-50954 (Start date 30 Oct 2023, English)

Language Of Instruction

English

Offered By

EECS/Electrical Engineering

Course memo Autumn 2023

Headings denoted with an asterisk ( * ) is retrieved from the course syllabus version Autumn 2023

Content and learning outcomes

Course contents

The course covers modelling of semiconductors and nanostructures with numerical methods such as the finite difference method (FDM) and the finite element method (FEM) and industry standard simulation programs for circuit design. The focus is on modern CMOS technology nodes including FinFET, SOI and future generations of 3D devices. Power consumption, energy efficiency and sustainable energy production are recurring themes.

The following areas are covered:

  • Description of comparative analysis of application and basic principles of physical device simulation (TCAD) and compact models for circuit simulation.
  • Compact models for modern semiconductor technologies and their implementation by means of hardware descriptive languages in design software, including corner modelling and other statistical methods.
  • General introduction to the combination of process simulation and device simulation for optimisation of future generations of semiconductor devices.
  • Hierarchies for device, circuit and mixed device and circuit simulations and multi-physics simulations in the semiconductor and nanostructure areas.
  • Thermal modelling, power consumption, variability and concepts such as ”dark silicon” in integrated circuits with 100-million transistors.
  • Parallel programming and hardware support for demanding semiconductor simulations.

Intended learning outcomes

After passing the course, the student shall be able to

  • choose appropriate transport models and material parameters for physical simulation (TCAD) of advanced semiconductor devices such as FinFET and SOI
  • use compact models for circuit simulation based on modern CMOS technology nodes and knowledge of power consumption, parameter extraction, fitting to measurement data and statistical methods such as corner simulations
  • use mixed circuit and device simulations for example in the power electronics area with a focus on energy efficiency and sustainable energy production
  • model discrete devices such as solar cells, light-emitting diodes and semiconductor-based sensors with a focus on energy efficiency and sustainable energy production
  • use computer programs for multi-physics simulations for e.g. thermal effects in devices and circuits.

Detailed plan

Contents and Reading 

Lecture/Tutorial Day Time Place Content Reading  
1 Mon 30 Oct 10-12 Q15 Course information; Introduction to Physical Device Simulations

Saha Ch. 1
Saha Ch. 2.2.7
(IL2240 Hu, Ch. 7)

 
2 Tue 31 Oct 10-12 Q26 Compact models for circuit simulations part I Detailed reading list in Module, chapters 1, 4 ,5, 9, 12 in Saha  
Tutorial 1 Thu 2 Nov 10-12 Ka-208 (Kista) Tutorial for Homework assignments Video or other  
3 Tue 7 Nov 10-12 E52 Compact models for circuit simulations part II Detailed reading list in Module, chapters 1, 4 ,5, 9, 12 in Saha  
4 Wed 8 Nov 10-12 D41 Simulating MOSFETs models and physics

Saha 4
Saha 5
(IL2240 Hu 6)

 
Tutorial 2 Fri 10 Nov  13-15 Ka-208 (Kista) Tutorial for Homework assignments    
5 Mon 13 Nov 13-15 V21 Numerical methods FDM and FVM  Slide set   
6 Thu 16 Nov  10-12 D2 Semiconductor Module in COMSOL and FEM Chapter by Gagandeep (PDF) and COMSOL Wiki  
Tutorial 3 Fri 17 Nov 10-12 Ka-208 (Kista) Tutorial for Homework assignments    
7 Mon 20 Nov 13-15 E2 Mixed Mode Simulations (and Multiphysics tentative) Two suggested Chapters by Baliga (PDF)  
8 Wed 22 Nov 10-12 Q17 Nanoscale Device Modeling Dutta paper, Lundstrom slides, Vasileska white paper  
Tutorial 4 Fri 24 Nov 10-12 Ka-208 (Kista) Tutorial for Homework assignments    
9 Mon 27 Nov 13-15 V21 Process  simulation Two suggested papers in Canvas  
10 Wed 29 Nov 10-12 E35 Reserve    
Tutorial 5 Fri 1 Dec 10-12 Ka-208 (Kista) Tutorial for Homework assignments    
11 Mon 4 Dec 13-15 E35 Simulation Hardware COMSOL blog  
12 Thu 7 Dec 10-12 V32 Micromagnetic simulations and other research topics Suggested Paper (Chen, Eklund et al), Standard problems documentation (online)  
Tutorial 6 Fri 8 Dec 10-12 Ka-308 (Kista) Tutorial for Homework assignments    
13 Mon 11 Dec 13-15 E2 Reserve    
14 Wed 13 Dec 10-12 E2 Review of all modules, exam preparation    
Tutorial 7 Fri 15 Dec 10-12 Ka-208 (Kista)

Preparations before course start

Examination and completion

Grading scale

A, B, C, D, E, FX, F

Examination

  • ANN1 - Assignments, 7.5 credits, Grading scale: A, B, C, D, E, FX, F

Based on recommendation from KTH’s coordinator for disabilities, the examiner will decide how to adapt an examination for students with documented disability.

The examiner may apply another examination format when re-examining individual students.

Ethical approach

  • All members of a group are responsible for the group's work.
  • In any assessment, every student shall honestly disclose any help received and sources used.
  • In an oral assessment, every student shall be able to present and answer questions about the entire assignment and solution.

Further information

No information inserted

Round Facts

Start date

30 Oct 2023

Course offering

  • Autumn 2023-50352
  • Autumn 2023-50954

Language Of Instruction

English

Offered By

EECS/Electrical Engineering

Contacts

Course Coordinator

Teachers

Examiner