Project: Vertical transistor laser

Summary in English

This project aims for the development of a novel semiconductor transmitter technology based on the direct integration of photonics and electronics. The device under consideration is referred to as a T-VCSEL, the integration of a high-frequency heterostructure bipolar transistor (HBT) with a vertical-cavity surface-emitting laser (VCSEL). Such devices have a number of interesting features with general implications for high-speed computing and data communication, including the potential for significantly increased VCSEL modulation bandwidth due to the reduced carrier lifetime in the base region. The project will involve all elements of this development from design and simulation, through materials growth and device fabrication to extensive device characterizations.