Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
30543 | 167 | 14.6 | 27% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
560 | 3 | CHALCOGENIDE GLASSES//CHALCOGENIDES//PHASE CHANGE MEMORY | 17255 |
1099 | 2 | CHALCOGENIDE GLASSES//CHALCOGENIDES//JOURNAL OF NON-CRYSTALLINE SOLIDS | 9814 |
30543 | 1 | MODIFIED LAYERS//RELAXATION TIME DISTRIBUTION FUNCTION//NONCRYSTALLINE SEMICOND | 167 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | MODIFIED LAYERS | authKW | 182847 | 1% | 100% | 1 |
2 | RELAXATION TIME DISTRIBUTION FUNCTION | authKW | 91423 | 1% | 50% | 1 |
3 | NONCRYSTALLINE SEMICOND | address | 60948 | 1% | 33% | 1 |
4 | RELAXATORS | authKW | 60948 | 1% | 33% | 1 |
5 | ARSENIC TRISELENIDE | authKW | 36568 | 1% | 20% | 1 |
6 | NAGIYEV CHEM PROBLEMS | address | 36568 | 1% | 20% | 1 |
7 | CONTACT REGIONS | authKW | 30473 | 1% | 17% | 1 |
8 | THIN FILM MORPHOLOGY | authKW | 17410 | 1% | 5% | 2 |
9 | SOVIET PHYSICS SEMICONDUCTORS-USSR | journal | 17351 | 14% | 0% | 23 |
10 | FAVORSKY IRKUTSK CHEM | address | 15233 | 1% | 4% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 1019 | 41% | 0% | 69 |
2 | Materials Science, Ceramics | 1005 | 16% | 0% | 26 |
3 | Physics, Applied | 473 | 35% | 0% | 59 |
4 | Materials Science, Multidisciplinary | 323 | 32% | 0% | 54 |
5 | Polymer Science | 62 | 8% | 0% | 14 |
6 | Mechanics | 14 | 4% | 0% | 7 |
7 | Physics, Multidisciplinary | 10 | 5% | 0% | 9 |
8 | Multidisciplinary Sciences | 1 | 1% | 0% | 1 |
9 | Nuclear Science & Technology | 0 | 1% | 0% | 2 |
10 | Energy & Fuels | 0 | 1% | 0% | 2 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | NONCRYSTALLINE SEMICOND | 60948 | 1% | 33% | 1 |
2 | NAGIYEV CHEM PROBLEMS | 36568 | 1% | 20% | 1 |
3 | FAVORSKY IRKUTSK CHEM | 15233 | 1% | 4% | 2 |
4 | FAVORSKY CHEM | 2342 | 1% | 1% | 1 |
5 | FAVORSKII CHEM | 1394 | 1% | 1% | 1 |
6 | CENT PHOTOPROC | 1141 | 1% | 1% | 1 |
7 | SOLID STATE SEMICOND PHYS | 355 | 1% | 0% | 1 |
8 | DAGESTAN SCI | 251 | 1% | 0% | 1 |
9 | FRANCIS BITTER MAGNET | 223 | 1% | 0% | 1 |
10 | PHYS TECH | 193 | 1% | 0% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 17351 | 14% | 0% | 23 |
2 | GLASS PHYSICS AND CHEMISTRY | 11879 | 7% | 1% | 11 |
3 | ADVANCES IN ELECTRONICS AND ELECTRON PHYSICS | 10669 | 2% | 1% | 4 |
4 | SEMICONDUCTORS | 6943 | 10% | 0% | 16 |
5 | PLASTE UND KAUTSCHUK | 6049 | 2% | 1% | 4 |
6 | ACTA POLYMERICA | 5507 | 5% | 0% | 8 |
7 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2314 | 10% | 0% | 16 |
8 | JOURNAL OF NON-CRYSTALLINE SOLIDS | 1791 | 9% | 0% | 15 |
9 | DOKLADY PHYSICS | 1305 | 2% | 0% | 4 |
10 | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1277 | 1% | 0% | 2 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | MODIFIED LAYERS | 182847 | 1% | 100% | 1 | Search MODIFIED+LAYERS | Search MODIFIED+LAYERS |
2 | RELAXATION TIME DISTRIBUTION FUNCTION | 91423 | 1% | 50% | 1 | Search RELAXATION+TIME+DISTRIBUTION+FUNCTION | Search RELAXATION+TIME+DISTRIBUTION+FUNCTION |
3 | RELAXATORS | 60948 | 1% | 33% | 1 | Search RELAXATORS | Search RELAXATORS |
4 | ARSENIC TRISELENIDE | 36568 | 1% | 20% | 1 | Search ARSENIC+TRISELENIDE | Search ARSENIC+TRISELENIDE |
5 | CONTACT REGIONS | 30473 | 1% | 17% | 1 | Search CONTACT+REGIONS | Search CONTACT+REGIONS |
6 | THIN FILM MORPHOLOGY | 17410 | 1% | 5% | 2 | Search THIN+FILM+MORPHOLOGY | Search THIN+FILM+MORPHOLOGY |
7 | COUPLING MODEL | 2648 | 1% | 1% | 1 | Search COUPLING+MODEL | Search COUPLING+MODEL |
8 | CONDUCTIVITY RELAXATION | 2573 | 1% | 1% | 1 | Search CONDUCTIVITY+RELAXATION | Search CONDUCTIVITY+RELAXATION |
9 | FLUENCE | 1323 | 1% | 1% | 1 | Search FLUENCE | Search FLUENCE |
10 | CHALCOGENIDE GLASSES | 1248 | 2% | 0% | 3 | Search CHALCOGENIDE+GLASSES | Search CHALCOGENIDE+GLASSES |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | CASTRO, RA , ANISIMOVA, NI , BORDOVSKY, VA , GRABKO, GI , (2011) EFFECT OF BISMUTH DOPANT ON THE DIELECTRIC PROPERTIES OF MODIFIED AS2SE3.PHYSICS OF THE SOLID STATE. VOL. 53. ISSUE 3. P. 458-461 | 7 | 100% | 0 |
2 | CASTRO, RA , GRABKO, GI , (2010) RELAXATION PHENOMENA IN (AS2SE3)(100-X)BI-X LAYERS.GLASS PHYSICS AND CHEMISTRY. VOL. 36. ISSUE 5. P. 566-569 | 6 | 100% | 0 |
3 | CASTRO, RA , BORDOVSKII, VA , GRABKO, GI , (2010) DISPERSION OF DIELECTRIC PARAMETERS IN MODIFIED ARSENIC TRISELENIDE LAYERS.TECHNICAL PHYSICS LETTERS. VOL. 36. ISSUE 9. P. 783-785 | 7 | 78% | 0 |
4 | TSIULYANU, D , (2004) HETEROSTRUCTURES ON CHALCOGENIDE GLASS AND THEIR APPLICATIONS.SEMICONDUCTING CHALCOGENIDE GLASS III: APPLICATIONS OF CHALCOGENIDE GLASSES. VOL. 80. ISSUE . P. 57-101 | 10 | 63% | 0 |
5 | ALMASOV, NG , PRIKHODKO, OY , TSENDIN, KD , (2012) INVERSION OF THE IMPURITY CONDUCTIVITY SIGN IN AS2SE3:BI FILMS DEPOSITED BY TWO DIFFERENT METHODS.SEMICONDUCTORS. VOL. 46. ISSUE 10. P. 1296-1298 | 5 | 100% | 2 |
6 | CASTRO, RA , BORDOVSKY, VA , GRABKO, GI , TATUREVICH, TV , (2011) INVESTIGATION OF THE STRUCTURE OF AN AMORPHOUS AS-SE SEMICONDUCTOR SYSTEM BY RELAXATION METHODS.SEMICONDUCTORS. VOL. 45. ISSUE 12. P. 1583-1588 | 6 | 86% | 0 |
7 | CASTRO, RA , BORDOVSKY, VA , GRABKO, GI , (2010) DISTRIBUTION OF RELAXATORS IN MODIFIED FILMS OF ARSENIC TRISELENIDE.GLASS PHYSICS AND CHEMISTRY. VOL. 36. ISSUE 1. P. 33-35 | 4 | 100% | 0 |
8 | ANISIMOVA, NI , BORDOVSKY, VA , GRABKO, GI , CASTRO, RA , (2010) FEATURES OF THE CHARGE TRANSFER IN STRUCTURES BASED ON THIN LAYERS OF BISMUTH-MODIFIED ARSENIC TRISELENIDE.SEMICONDUCTORS. VOL. 44. ISSUE 8. P. 1004-1007 | 4 | 100% | 0 |
9 | ANISIMOVA, NI , BORDOVSKY, VA , GRABKO, GI , CASTRO, RA , (2013) ULTRALOW-FREQUENCY PHOTOELECTRIC RESPONSE OF AMORPHOUS AS2SE3 LAYERS.SEMICONDUCTORS. VOL. 47. ISSUE 7. P. 952-955 | 4 | 80% | 0 |
10 | MAZETS, TF , TSENDIN, KD , (1990) MECHANISM OF DOPING OF GLASSY CHALCOGENIDE SEMICONDUCTORS.SOVIET PHYSICS SEMICONDUCTORS-USSR. VOL. 24. ISSUE 11. P. 1214-1217 | 9 | 75% | 6 |
Classes with closest relation at Level 1 |