Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
25837 | 270 | 23.1 | 74% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
48 | 3 | THERMOELECTRIC//QUANTUM DOTS//MATERIALS SCIENCE, MULTIDISCIPLINARY | 93648 |
354 | 2 | THERMOELECTRIC//THERMOELECTRIC MATERIALS//THERMOELECTRIC PROPERTIES | 17454 |
25837 | 1 | BASI2//CAALSI//BARIUM SILICIDE | 270 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | BASI2 | authKW | 2267012 | 8% | 95% | 21 |
2 | CAALSI | authKW | 1357124 | 4% | 100% | 12 |
3 | BARIUM SILICIDE | authKW | 692697 | 3% | 88% | 7 |
4 | ALB2 TYPE STRUCTURE | authKW | 603161 | 3% | 67% | 8 |
5 | SRALSI | authKW | 452375 | 1% | 100% | 4 |
6 | IBEC INNOVAT PLATFORM | address | 370119 | 2% | 55% | 6 |
7 | ALB2 STRUCTURE | authKW | 361898 | 1% | 80% | 4 |
8 | SILICIDE SEMICONDUCTOR | authKW | 361898 | 1% | 80% | 4 |
9 | BAALSI | authKW | 339281 | 1% | 100% | 3 |
10 | Y2PDGE3 | authKW | 339281 | 1% | 100% | 3 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 1582 | 49% | 0% | 133 |
2 | Physics, Condensed Matter | 1090 | 34% | 0% | 92 |
3 | Materials Science, Multidisciplinary | 206 | 22% | 0% | 59 |
4 | Materials Science, Coatings & Films | 157 | 6% | 0% | 16 |
5 | Metallurgy & Metallurgical Engineering | 115 | 8% | 0% | 21 |
6 | Chemistry, Physical | 43 | 11% | 0% | 31 |
7 | Crystallography | 35 | 4% | 0% | 10 |
8 | Physics, Multidisciplinary | 27 | 6% | 0% | 17 |
9 | Chemistry, Inorganic & Nuclear | 14 | 4% | 0% | 10 |
10 | Physics, Mathematical | 4 | 2% | 0% | 5 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IBEC INNOVAT PLATFORM | 370119 | 2% | 55% | 6 |
2 | IRM SACLAY | 113094 | 0% | 100% | 1 |
3 | LMD SCI TECH | 113094 | 0% | 100% | 1 |
4 | OBERFLACHEN MIKROSTRUKUREPHYS | 113094 | 0% | 100% | 1 |
5 | PLASMA ION LASER TECHNOL | 113094 | 0% | 100% | 1 |
6 | PROF SCI STUDIES | 113094 | 0% | 100% | 1 |
7 | SOLIDES IRRADIES ETSF | 113094 | 0% | 100% | 1 |
8 | SUPERCONDT | 113094 | 0% | 100% | 1 |
9 | SYNCHRONTRONST LUNG MBH | 113094 | 0% | 100% | 1 |
10 | PHYS RAYONNEMENTS LEURS INTERACT AVEC MATIE | 113092 | 1% | 50% | 2 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | INTERMETALLICS | 3309 | 4% | 0% | 11 |
2 | JAPANESE JOURNAL OF APPLIED PHYSICS | 3133 | 8% | 0% | 21 |
3 | PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2854 | 9% | 0% | 25 |
4 | APPLIED PHYSICS EXPRESS | 1105 | 2% | 0% | 6 |
5 | PHYSICAL REVIEW B | 847 | 13% | 0% | 36 |
6 | THIN SOLID FILMS | 682 | 6% | 0% | 15 |
7 | ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE | 606 | 0% | 1% | 1 |
8 | FRONTIERS IN CHEMISTRY | 452 | 0% | 0% | 1 |
9 | JOURNAL OF APPLIED PHYSICS | 320 | 7% | 0% | 18 |
10 | TECHNICAL PHYSICS | 317 | 1% | 0% | 4 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | BASI2 | 2267012 | 8% | 95% | 21 | Search BASI2 | Search BASI2 |
2 | CAALSI | 1357124 | 4% | 100% | 12 | Search CAALSI | Search CAALSI |
3 | BARIUM SILICIDE | 692697 | 3% | 88% | 7 | Search BARIUM+SILICIDE | Search BARIUM+SILICIDE |
4 | ALB2 TYPE STRUCTURE | 603161 | 3% | 67% | 8 | Search ALB2+TYPE+STRUCTURE | Search ALB2+TYPE+STRUCTURE |
5 | SRALSI | 452375 | 1% | 100% | 4 | Search SRALSI | Search SRALSI |
6 | ALB2 STRUCTURE | 361898 | 1% | 80% | 4 | Search ALB2+STRUCTURE | Search ALB2+STRUCTURE |
7 | SILICIDE SEMICONDUCTOR | 361898 | 1% | 80% | 4 | Search SILICIDE+SEMICONDUCTOR | Search SILICIDE+SEMICONDUCTOR |
8 | BAALSI | 339281 | 1% | 100% | 3 | Search BAALSI | Search BAALSI |
9 | Y2PDGE3 | 339281 | 1% | 100% | 3 | Search Y2PDGE3 | Search Y2PDGE3 |
10 | SEMICONDUCTING SILICIDES | 295490 | 3% | 29% | 9 | Search SEMICONDUCTING+SILICIDES | Search SEMICONDUCTING+SILICIDES |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | DU, WJ , BABA, M , TOKO, K , HARA, KO , WATANABE, K , SEKIGUCHI, T , USAMI, N , SUEMASU, T , (2014) ANALYSIS OF THE ELECTRICAL PROPERTIES OF CR/N-BASI2 SCHOTTKY JUNCTION AND N-BASI2/P-SI HETEROJUNCTION DIODES FOR SOLAR CELL APPLICATIONS.JOURNAL OF APPLIED PHYSICS. VOL. 115. ISSUE 22. P. - | 29 | 83% | 6 |
2 | HARA, KO , NAKAGAWA, Y , SUEMASU, T , USAMI, N , (2015) REALIZATION OF SINGLE-PHASE BASI2 FILMS BY VACUUM EVAPORATION WITH SUITABLE OPTICAL PROPERTIES AND CARRIER LIFETIME FOR SOLAR CELL APPLICATIONS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 54. ISSUE 7. P. - | 22 | 92% | 1 |
3 | TRINH, CT , NAKAGAWA, Y , HARA, KO , TAKABE, R , SUEMASU, T , USAMI, N , (2016) PHOTORESPONSE PROPERTIES OF BASI2 FILM GROWN ON SI (100) BY VACUUM EVAPORATION.MATERIALS RESEARCH EXPRESS. VOL. 3. ISSUE 7. P. - | 25 | 76% | 0 |
4 | HARA, KO , YAMANAKA, J , ARIMOTO, K , NAKAGAWA, K , SUEMASU, T , USAMI, N , (2015) STRUCTURAL AND ELECTRICAL CHARACTERIZATIONS OF CRACK-FREE BASI2 THIN FILMS FABRICATED BY THERMAL EVAPORATION.THIN SOLID FILMS. VOL. 595. ISSUE . P. 68 -72 | 20 | 95% | 0 |
5 | HARA, KO , TRINH, CT , ARIMOTO, K , YAMANAKA, J , NAKAGAWA, K , KUROKAWA, Y , SUEMASU, T , USAMI, N , (2016) EFFECTS OF DEPOSITION RATE ON THE STRUCTURE AND ELECTRON DENSITY OF EVAPORATED BASI2 FILMS.JOURNAL OF APPLIED PHYSICS. VOL. 120. ISSUE 4. P. - | 24 | 75% | 0 |
6 | DU, WJ , SUZUNO, M , KHAN, MA , TOH, K , BABA, M , NAKAMURA, K , TOKO, K , USAMI, N , SUEMASU, T , (2012) IMPROVED PHOTORESPONSIVITY OF SEMICONDUCTING BASI2 EPITAXIAL FILMS GROWN ON A TUNNEL JUNCTION FOR THIN-FILM SOLAR CELLS.APPLIED PHYSICS LETTERS. VOL. 100. ISSUE 15. P. - | 20 | 87% | 12 |
7 | SUEMASU, T , (2015) EXPLORING THE POSSIBILITY OF SEMICONDUCTING BASI2 FOR THIN-FILM SOLAR CELL APPLICATIONS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 54. ISSUE 7. P. - | 29 | 57% | 1 |
8 | NAKAGAWA, Y , HARA, KO , SUEMASU, T , USAMI, N , (2015) FABRICATION OF SINGLE-PHASE POLYCRYSTALLINE BASI2 THIN FILMS ON SILICON SUBSTRATES BY VACUUM EVAPORATION FOR SOLAR CELL APPLICATIONS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 54. ISSUE 8. P. - | 17 | 94% | 1 |
9 | TAKABE, R , NAKAMURA, K , BABA, M , DU, WJ , KHAN, MA , TOKO, K , SASASE, M , HARA, KO , USAMI, N , SUEMASU, T , (2014) FABRICATION AND CHARACTERIZATION OF BASI2 EPITAXIAL FILMS OVER 1 MU M IN THICKNESS ON SI(111).JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 4. P. - | 21 | 78% | 0 |
10 | SUEMASU, T , SAITO, T , TOH, K , OKADA, A , KHAN, MA , (2011) PHOTORESPONSE PROPERTIES OF BASI2 EPITAXIAL FILMS GROWN ON THE TUNNEL JUNCTION FOR HIGH-EFFICIENCY THIN-FILM SOLAR CELLS.THIN SOLID FILMS. VOL. 519. ISSUE 24. P. 8501-8504 | 18 | 95% | 6 |
Classes with closest relation at Level 1 |