Publikationer av Saulius Marcinkevicius
Refereegranskade
Artiklar
[1]
R. Yapparov et al., "Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects," Applied Physics Letters, vol. 125, no. 3, 2024.
[2]
S. Marcinkevičius et al., "Dynamics of carrier injection through V-defects in long wavelength GaN LEDs," Applied Physics Letters, vol. 124, no. 18, 2024.
[3]
R. Yapparov et al., "Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence," Journal of Applied Physics, vol. 136, no. 8, 2024.
[4]
S. Marcinkevičius et al., "Effect of Mg doping on carrier recombination in GaN," Journal of Applied Physics, vol. 134, no. 8, 2023.
[5]
S. Marcinkevičius et al., "Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs," Applied Physics Letters, vol. 123, no. 20, 2023.
[6]
H. Chen et al., "Photon Walk in Transparent Wood: Scattering and Absorption in Hierarchically Structured Materials," Advanced Optical Materials, 2022.
[7]
S. Marcinkevicius och J. S. Speck, "Electron-phonon scattering in beta-Ga2O3 studied by ultrafast transmission spectroscopy," Applied Physics Letters, vol. 118, no. 24, 2021.
[8]
S. Marcinkevičius et al., "High internal quantum efficiency of long wavelength InGaN quantum wells," Applied Physics Letters, vol. 119, no. 7, 2021.
[9]
S. Marcinkevičius et al., "Low-temperature carrier transport across InGaN multiple quantum wells : Evidence of ballistic hole transport," Physical Review B, vol. 101, no. 7, 2020.
[10]
R. Yapparov et al., "Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination," Applied Physics Expres, vol. 13, no. 12, 2020.
[11]
S. Marcinkevičius och J. S. Speck, "Ultrafast dynamics of hole self-localization in beta-Ga2O3," Applied Physics Letters, vol. 116, no. 13, 2020.
[12]
R. Yapparov et al., "Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells," Journal of Applied Physics, vol. 128, no. 22, 2020.
[13]
M. A. Bergmann et al., "Electrochemical etching of AlGaN for the realization of thin-film devices," Applied Physics Letters, vol. 115, no. 18, 2019.
[14]
A. C. Espenlaub et al., "Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs," Journal of Applied Physics, vol. 126, no. 18, 2019.
[15]
S. Marcinkevicius et al., "Interwell carrier transport in InGaN/(In)GaN multiple quantum wells," Applied Physics Letters, vol. 114, no. 15, 2019.
[16]
G. Omanakuttan et al., "Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth," Optical Materials Express, vol. 9, no. 3, s. 1488-1500, 2019.
[17]
T. K. UŽdavinys et al., "Impact of surface morphology on the properties of light emission in InGaN epilayers," Applied Physics Express, vol. 11, no. 5, 2018.
[18]
S. Marcinkevičius et al., "Multimode scanning near-field photoluminescence spectroscopy and its application for studies of ingan epitaxial layers and quantum wells," Lithuanian Journal of Physics, vol. 58, no. 1, s. 76-89, 2018.
[19]
R. Butte et al., "Optical absorption edge broadening in thick InGaN layers : Random alloy atomic disorder and growth mode induced fluctuations," Applied Physics Letters, vol. 112, no. 3, 2018.
[20]
T. K. Uždavinys et al., "Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence," Optical Materials Express, vol. 7, no. 9, 2017.
[21]
R. Ivanov et al., "Polarization-Resolved Near-Field Spectroscopy of Localized States in m -Plane InxGa1-x N/Ga N Quantum Wells," Physical Review Applied, vol. 7, no. 6, 2017.
[22]
R. Ivanov et al., "Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells," Applied Physics Letters, vol. 110, no. 3, 2017.
[23]
M. Noroozi et al., "Unprecedented thermoelectric power factor in SiGe nanowires field-effect transistors," ECS Journal of Solid State Science and Technology, vol. 6, no. 9, s. Q114-Q119, 2017.
[24]
S. Marcinkevičius et al., "Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy," Physical Review B. Condensed Matter and Materials Physics, vol. 94, no. 23, 2016.
[25]
D. Wickramaratne et al., "Iron as a source of efficient Shockley-Read-Hall recombination in GaN," Applied Physics Letters, vol. 109, no. 16, 2016.
[26]
M. Mensi et al., "Properties of near-field photoluminescence in green emitting single and multiple semipolar (2021) plane InGaN/GaN quantum wells," Optical Materials Express, vol. 6, no. 1, s. 39-45, 2016.
[27]
K. Gelzinyte et al., "High spatial uniformity of photoluminescence spectra in semipolar (20(2)over-bar1) plane InGaN/GaN quantum wells," Journal of Applied Physics, vol. 117, no. 2, s. 023111, 2015.
[28]
R. Ivanov et al., "Impact of carrier localization on radiative recombination times in semipolar (2021) plane InGaN/GaN quantum wells," Applied Physics Letters, vol. 107, no. 21, 2015.
[29]
S. Marcinkevicius et al., "Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure," Semiconductor Science and Technology, vol. 30, no. 11, 2015.
[30]
S. Marcinkevicius et al., "Carrier redistribution between different potential sites in semipolar (20(2)over-bar1) InGaN quantum wells studied by near-field photoluminescence," Applied Physics Letters, vol. 105, no. 11, s. 111108, 2014.
[31]
S. Marcinkevicius et al., "High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy," Applied Physics Letters, vol. 105, no. 24, s. 241108, 2014.
[32]
S. Marcinkevicius et al., "Highly polarized photoluminescence and its dynamics in semipolar (20(2)over-bar(1)over-bar) InGaN/GaN quantum well," Applied Physics Letters, vol. 104, no. 11, s. 111113, 2014.
[33]
N. Meiser, S. Marcinkevicius och V. Pasiskevicius, "Transient behaviour of quantum-dot saturable absorber mirrors at varying excitation fluence," Applied physics. B, Lasers and optics (Print), vol. 116, no. 4, s. 919-927, 2014.
[34]
S. Marcinkevicius et al., "Carrier dynamics and localization in AlInN/GaN heterostructures," Physica Status Solidi. C, Current topics in solid state physics, vol. 10, no. 5, s. 853-856, 2013.
[35]
S. Naureen et al., "Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching," Applied Physics Letters, vol. 102, no. 21, s. 212106, 2013.
[36]
S. Marcinkevičius et al., "Near-field investigation of spatial variations of (202̄1̄) InGaN quantum well emission spectra," Applied Physics Letters, vol. 103, no. 13, s. 131116, 2013.
[37]
S. Marcinkevicius et al., "Optical properties of extended and localized states in m-plane InGaN quantum wells," Applied Physics Letters, vol. 102, no. 10, s. 101102, 2013.
[38]
S. Marcinkevicius et al., "Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells," Applied Physics Letters, vol. 103, no. 11, s. 111107, 2013.
[39]
V. Liuolia et al., "Near- and far-field optical characterization of InGaN photonic crystal light emitting diodes," Physica Status Solidi. C, Current topics in solid state physics, vol. 9, no. 7, s. 1664-1666, 2012.
[40]
V. Liuolia et al., "Photoexcited carrier dynamics in AlInN/GaN heterostructures," Applied Physics Letters, vol. 100, no. 24, s. 242104, 2012.
[41]
A. Pinos et al., "Scanning near-field optical spectroscopy of AlGaN epitaxial layers," Physica Status Solidi. C, Current topics in solid state physics, vol. 9, no. 7, s. 1617-1620, 2012.
[42]
S. Marcinkevicius et al., "Transient photoreflectance of AlInN/GaN heterostructures," AIP Advances, vol. 2, no. 4, s. 042148, 2012.
[43]
A. Pinos, S. Marcinkevicius och M. S. Shur, "High current-induced degradation of AlGaN ultraviolet light emitting diodes," Journal of Applied Physics, vol. 109, no. 10, s. 103108, 2011.
[44]
A. Pinos et al., "Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy," Journal of Applied Physics, vol. 109, no. 11, 2011.
[45]
A. Sugunan et al., "Synthesis of tetrahedral quasi-type-II CdSe-CdS core-shell quantum dots," Nanotechnology, vol. 22, no. 42, s. 425202, 2011.
[46]
V. Liuolia et al., "Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy," Applied Physics Letters, vol. 97, no. 15, s. 151106, 2010.
[47]
V. Liuolia et al., "Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells," Journal of Applied Physics, vol. 108, no. 2, s. 023101, 2010.
[48]
A. Pinos et al., "Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes," Journal of Applied Physics, vol. 108, no. 9, s. 093113, 2010.
[49]
S. Kivisto et al., "Pulse dynamics of a passively mode-locked Bi-doped fiber laser," Optics Express, vol. 18, no. 2, s. 1041-1048, 2010.
[50]
A. Berrier et al., "Accumulated sidewall damage in dry etched photonic crystals," Journal of Vacuum Science & Technology B, vol. 27, no. 4, s. 1969-1975, 2009.
[51]
A. Pinos et al., "Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy," Applied Physics Letters, vol. 95, no. 18, 2009.
[52]
V. Liuolia et al., "Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy," Applied Physics Letters, vol. 95, no. 9, 2009.
[53]
A. Pinos et al., "Time-resolved luminescence studies of proton-implanted GaN," Applied Physics Letters, vol. 95, no. 11, 2009.
[54]
S. Gautier et al., "AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas," Journal of Crystal Growth, vol. 310, no. 23, s. 4927-4931, 2008.
[55]
A. Pinos et al., "Carrier lifetimes in AlGaN quantum wells : electric field and excitonic effects," Journal of Physics D : Applied Physics, vol. 41, no. 15, 2008.
[56]
A. Pinos et al., "Screening dynamics of intrinsic electric field in AlGaN quantum wells," Applied Physics Letters, vol. 92, no. 6, s. 061907, 2008.
[57]
S. Suomalainen et al., "Semiconductor saturable absorbers with recovery time controlled by lattice mismatch and band-gap engineering," Materials Science & Engineering : B. Solid-state Materials for Advanced Technology, vol. 147, no. 2-3, s. 156-160, 2008.
[58]
S. Marcinkevicius, A. Gushterov och J. P. Reithmaier, "Transient electromagnetically induced transparency in self-assembled quantum dots," Applied Physics Letters, vol. 92, no. 4, 2008.
[59]
T. Aggerstam et al., "Electron and hole capture cross-sections of Fe acceptors in GaN:Fe epitaxially grown on sapphire," Journal of Electronic Materials, vol. 36, no. 12, s. 1621-1624, 2007.
[60]
S. Marcinkevicius et al., "Intrinsic electric fields in AlGaN quantum wells," Applied Physics Letters, vol. 90, no. 8, 2007.
[61]
S. Suomalainen et al., "1 µm saturable absorber with recovery time reduced by lattice mismatch," Applied Physics Letters, vol. 89, no. 7, s. 071112-1-071112-3, 2006.
[62]
S. Marcinkevicius, J. Siegert och Q. X. Zhao, "Carrier spin dynamics in modulation-doped InAs/GaAs quantum dots," Journal of Applied Physics, vol. 100, no. 5, s. 054310, 2006.
[63]
K. Bertulis et al., "GaBiAs : A material for optoelectronic terahertz devices," Applied Physics Letters, vol. 88, no. 20, 2006.
[64]
J. Siegert et al., "Recombination properties of Si-doped InGaAs/GaAs quantum dots," Nanotechnology, vol. 17, no. 21, s. 5373-5377, 2006.
[65]
N. Akram et al., "The effect of barrier composition on the vertical carrier transport and lasing properties of 1.55-mu m multiple quantum-well structures," IEEE Journal of Quantum Electronics, vol. 42, no. 7, s. 713-714, 2006.
[66]
J. Siegert, S. Marcinkevičius och Q. X. Zhao, "Carrier dynamics in modulation-doped InAs/GaAs quantum dots," Physical Review B. Condensed Matter and Materials Physics, vol. 72, no. 8, s. 085316, 2005.
[67]
H. Lindberg et al., "Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber," Optics Letters, vol. 30, no. 20, s. 2793-2795, 2005.
[68]
N. Zurauskiene et al., "Optically detected microwave resonance and carrier dynamics in InAs/GaAs quantum dots," Acta Physica Polonica. A, vol. 107, no. 2, s. 435-439, 2005.
[69]
S. Marcinkevicius et al., "Time-resolved photoluminescence and Raman scattering of InAsSb/InP quantum dots," Applied Physics Letters, vol. 86, no. 18, 2005.
[70]
M. X. Chen et al., "1 micron wavelength photo- and electroluminescence from a conjugated polymer," Applied Physics Letters, vol. 84, no. 18, s. 3570-3572, 2004.
[71]
P. Pellegrino et al., "Time-resolved analysis of the white photoluminescence from SiO2 films after Si and C coimplantation," Applied Physics Letters, vol. 84, no. 1, s. 25-27, 2004.
[72]
J. Siegert et al., "Carrier recombination in aligned InAs/GaAs quantum dots grown in strain-relaxed InGaAs layers," Physica Status Solidi. C, Current topics in solid state physics, vol. 0, no. 4, s. 1213, 2003.
[73]
C. Carmody et al., "Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications," Applied Physics Letters, vol. 82, no. 22, s. 3913-3915, 2003.
[74]
J. Siegert et al., "Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers," Physica. E, Low-Dimensional systems and nanostructures, vol. 18, no. 4, s. 541, 2003.
[75]
C. Carmody et al., "Ultrafast carrier trapping and recombination in highly resistive ion implanted InP," Journal of Applied Physics, vol. 94, no. 2, s. 1074-1078, 2003.
[76]
A. Krotkus et al., "Be-doped low-temperature-grown GaAs material for optoelectronic switches," IEE Proceedings - Optoelectronics, vol. 149, no. 3, s. 111-115, 2002.
[77]
S. Marcinkevicius et al., "Changes in carrier dynamics induced by proton irradiation in quantum dots," Physica. B, Condensed matter, vol. 314, no. 04-jan, s. 203-206, 2002.
[78]
S. Marcinkevičius et al., "Changes in luminescence intensities and carrier dynamics induced by proton irradiation in In_xGa_1-xAs/GaAs quantum dots," Physical Review B. Condensed Matter and Materials Physics, vol. 66, no. 23, s. 235314, 2002.
[79]
R. Leon et al., "Defect states in red-emitting InxAl1-xAs quantum dots," Physical Review B. Condensed Matter and Materials Physics, vol. 66, no. 8, 2002.
[80]
R. Leon et al., "Dislocation-induced spatial ordering of InAs quantum dots : Effects on optical properties," Journal of Applied Physics, vol. 91, no. 9, s. 5826-5830, 2002.
[81]
R. Leon et al., "Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots," IEEE Transactions on Nuclear Science, vol. 49, no. 6, s. 2844-2851, 2002.
[82]
A. Gaarder et al., "Time-resolved micro-photoluminescence studies of deep level distribution in selectively regrown GaInP : Fe and GaAs : Fe," Semiconductor Science and Technology, vol. 17, no. 2, s. 129-134, 2002.
[83]
A. Gaarder et al., "Time-resolved micro-photoluminescence studies of dopant distribution in selectively regrown GalnP : Fe around VCSELs," Physica Scripta, vol. T101, s. 89-91, 2002.
[84]
A. Gaarder et al., "Dopant distribution in selectively regrown InP : Fe studied by time-resolved photoluminescence," Journal of Crystal Growth, vol. 226, no. 4, s. 451-457, 2001.
[85]
S. Marcinkevicius, A. Gaarder och R. Leon, "Rapid carrier relaxation by phonon emission in In0.6Ga0.4As/GaAs quantum dots," Physical Review B Condensed Matter, vol. 6411, no. 11, 2001.
[86]
S. Marcinkevicius och R. Leon, "Carrier capture and relaxation in quantum dot structures with different dot densities," Microelectronic Engineering, vol. feb-51, s. 79-83, 2000.
[87]
S. Marcinkevicius et al., "Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers," Applied Physics Letters, vol. 76, no. 10, s. 1306-1308, 2000.
[88]
S. Marcinkevicius och R. Leon, "Photoexcited carrier transfer in InGaAs quantum dot structures : Dependence on the dot density," Applied Physics Letters, vol. 76, no. 17, s. 2406-2408, 2000.
[89]
E. R. Messmer et al., "Properties of semi-insulating GaAs : Fe grown by hydride vapor phase epitaxy," Journal of the Electrochemical Society, vol. 147, no. 8, s. 3109-3110, 2000.
Konferensbidrag
[90]
R. Yapparov et al., "Engineering of quantum barriers for efficient InGaN quantum well LEDs," i Novel Optical Materials and Applications, NOMA 2022, 2022.
[91]
R. Yapparov et al., "Optimization of InGaN quantum well interfaces for fast interwell carrier transport and low nonradiative recombination," i Gallium Nitride Materials and Devices XVII, 2022.
[92]
S. Marcinkevičius et al., "Impact of barrier height on the interwell carrier transport in InGaN/(In)GaN multiple quantum wells," i Optics InfoBase Conference Papers, 2019.
[93]
D. Visser et al., "Top-down fabrication of high quality gallium indium phosphide nanopillar/disk array structures," i Proceedings of NMDC 2019, 2019.
[94]
S. Marcinkevičius et al., "Multimode scanning near-field photoluminescence spectroscopy of InGaN quantum wells," i 2018 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE (RAPID), 2018, s. 93-95.
[95]
S. Marcinkevičius et al., "Scanning near-field optical microscopy of AlGaN epitaxial layers," i UV and Higher Energy Photonics : From Materials to Applications, 2016.
[96]
S. Marcinkevicius et al., "Spatial variations of optical properties of semipolar InGaN quantum wells," i Gallium Nitride Materials and Devices X, 2015.
[97]
S. Marcinkevicius et al., "Optical properties and carrier dynamics in m-plane InGaN quantum wells," i 10th International Conference on Nitride Semiconductors (ICNS), AUG 25-30, 2013, Washington, DC, USA, 2014, s. 690-693.
[98]
L. Thylén, S. Marcinkevicius och P. Holmström, "Nanophotonics : A tutorial," i Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012, 2012, s. 224-225.
[99]
J. Puustinen et al., "1.22 µm GaInNAs saturable absorber mirrors with tailored recovery time," i Emerging trends and novel materials in photonics : International Commission for Optics topical meeting, 2010, s. 200-203.
[100]
A. Pinos och S. Marcinkevicius, "Scanning near-field optical spectroscopy of AlGaN-based light emitting diodes," i GALLIUM NITRIDE MATERIALS AND DEVICES V, 2010.
[101]
Q. Wang et al., "Multiple functional UV devices based on III-Nitride quantum wells for biological warfare agent detection," i GALLIUM NITRIDE MATERIALS AND DEVICES IV, 2009, s. 721627-1-721627-9.
[102]
A. Berrier et al., "Impact of dry-etching induced damage in InP-based photonic crystals," i PHOTONIC CRYSTAL MATERIALS AND DEVICES VIII, 2008, s. U9890-U9890.
[103]
S. Marcinkevicius, A. Gusterov och J. P. Reithmaier, "Transient electromagnetically induced transparency in InGaAs quantum dots," i 2008 Conference On Lasers And Electro-Optics & Quantum Electronics And Laser Science Conference : Vols 1-9, 2008, s. 3597-3598.
[104]
M. Guina et al., "Semiconductor saturable absorbers with recovery time controlled by lattice mismatch," i Optical Components and Materials IV, 2007, s. 64690P-1-64690P-7.
[105]
M. Guina et al., "Semiconductor saturable absorbers with recovery time controlled through growth conditions," i Solid State Lasers XVI : Technology and Devices, 2007, s. 645113-1-645113-7.
[106]
S. Marcinkevičius och J. Siegert, "Carrier capture and relaxation in modulation doped InAs quantum dots," i International Quantum Electronics Conference 2005; Tokyo; Japan, 2005, s. 454-455.
[107]
M. N. Akram et al., "Experimental evaluation of carrier transport, gain, T0 and chirp of 1.55 mm MQW structures with different barrier compositions," i 31st European Conference on Optical Communications (ECOC 2005), 2005, 2005, s. 297-298.
[108]
N. M. Akram et al., "Experimental evaluation of carrier transport, gain, T0 and chirp of 1.55 mu;m MQW structures with different barrier compositions," i Optical Communication, 2005. ECOC 2005. 31st European Conference on, 2005, s. 297-298.
[109]
S. Marcinkevicius och Q. Zhao, "Spin relaxation in charged InAs/GaAs quantum dots," i COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, 2005, s. 443-446.
[110]
N. Zurauskiene et al., "Semiconductor nanostructures for infrared applications," i Functional Nanomaterials For Optoelectronics And Other Applications, 2004, s. 99-108.
[111]
S. Marcinkevicius et al., "Ultrafast carrier dynamics in highly resistive InP and InGaAs produced by ion implantation," i ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS VIII, 2004, s. 299-309.
[112]
R. Campi, S. Marcinkevicius och G. Landgren, "Studies on the carrier transport in InGaAlAdP/InGaAsP quantum well structures emitting at 1.3 μm," i Conference on Lasers and Electro-Optics Europe - Technical Digest, 2000, s. 141.
Kapitel i böcker
[113]
S. Marcinkevicius, "Dynamics of carrier transfer into In(Ga)As self-assembled quantum dots," i Self-Assembled Quantum Dots, Zhiming M. Wang red., 1. uppl. : Springer, 2008, s. 129-164.
Icke refereegranskade
Övriga
[114]
A. Berrier et al., "Development of damage and its impact on surface recombination velocities in dry-etched InP-based photonic crystals," (Manuskript).
[115]
Senaste synkning med DiVA:
2024-11-17 00:58:56