Publikationer av Mattias Hammar
Refereegranskade
Artiklar
[1]
T. Descamps et al., "Mapping and spectroscopy of telecom quantum emitters with confocal laser scanning microscopy," Nanotechnology, vol. 35, no. 41, 2024.
[2]
Y. Su et al., "Monolithic Fabrication of Metal‐Free On‐Paper Self‐Charging Power Systems," Advanced Functional Materials, 2024.
[3]
S. Gyger et al., "Metropolitan single-photon distribution at 1550 nm for random number generation," Applied Physics Letters, vol. 121, no. 19, s. 194003, 2022.
[4]
M. Hammar, A. Hallén och S. Lourdudoss, "Compound Semiconductors," Physica status solidi. B, Basic research, vol. 258, no. 2, 2021.
[5]
K. Zeuner et al., "On-Demand Generation of Entangled Photon Pairs in the Telecom C-Band with InAs Quantum Dots," ACS Photonics, vol. 8, no. 8, s. 2337-2344, 2021.
[6]
S. Khartsev et al., "Reverse‐Bias Electroluminescence in Er‐Doped β‐Ga 2 O 3 Schottky Barrier Diodes Manufactured by Pulsed Laser Deposition," Physica Status Solidi (a) applications and materials science, vol. 219, no. 4, s. 2100610-2100610, 2021.
[7]
T. Lettner et al., "Strain-Controlled Quantum Dot Fine Structure for Entangled Photon Generation at 1550 nm," Nano Letters, vol. 21, no. 24, s. 10501-10506, 2021.
[8]
C. Reuterskiöld-Hedlund et al., "Buried InP/Airhole Photonic‐Crystal Surface‐Emitting Lasers," Physica status solidi. A, Applied research, 2020.
[9]
S. Khartsev et al., "High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition," Physica status solidi. B, Basic research, vol. 258, no. 2, s. 2000362-2000362, 2020.
[10]
C. Reuterskiöld-Hedlund et al., "Buried-Tunnel Junction Current Injection for InP-Based Nanomembrane Photonic Crystal Surface Emitting Lasers on Silicon," Physica Status Solidi (a) applications and materials science, vol. 217, no. 3, 2019.
[11]
W. Zhou et al., "On-Chip Photonic Crystal Surface-Emitting Membrane Lasers," IEEE Journal of Selected Topics in Quantum Electronics, vol. 25, no. 3, 2019.
[12]
S. Gyger et al., "Reconfigurable frequency coding of triggered single photons in the telecom C-band," Optics Express, vol. 27, no. 10, s. 14400-14406, 2019.
[13]
K. D. Zeuner et al., "A stable wavelength-tunable triggered source of single photons and cascaded photon pairs at the telecom C-band," Applied Physics Letters, vol. 112, no. 17, 2018.
[14]
S.-C. Liu et al., "Size Scaling of Photonic Crystal Surface Emitting Lasers on Silicon Substrates," IEEE Photonics Journal, vol. 10, no. 3, 2018.
[15]
C. Reuterskiold Hedlund et al., "Trench-Confined InP-Based Epitaxial Regrowth Using Metal-Organic Vapor-Phase Epitaxy," Physica Status Solidi (a) applications and materials science, vol. 215, no. 8, 2018.
[16]
S.-C. Liu et al., "Photonic crystal bandedge membrane lasers on silicon," Applied Optics, vol. 56, no. 31, s. H67-H73, 2017.
[17]
L. Menon et al., "Heterogeneously Integrated InGaAs and Si Membrane Four-Color Photodetector Arrays," IEEE Photonics Journal, vol. 8, no. 2, 2016.
[18]
D. Zhao et al., "Printed Large-Area Single-Mode Photonic Crystal Bandedge Surface-Emitting Lasers on Silicon," Scientific Reports, vol. 6, 2016.
[19]
T.-H. Chang et al., "Selective release of InP heterostructures from InP substrates," Journal of Vacuum Science & Technology B, vol. 34, no. 4, 2016.
[20]
M. M. Atwa et al., "Trilayer Graphene as a Candidate Material for Phase-Change Memory Applications," MRS Advances, vol. 1, no. 20, s. 1487-1494, 2016.
[21]
Y. Xiang et al., "AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers," Optics Express, vol. 23, no. 12, s. 15680-15699, 2015.
[22]
T. Zabel et al., "Auger recombination in In(Ga)Sb/InAs quantum dots," Applied Physics Letters, vol. 106, no. 1, s. 013103, 2015.
[23]
M. Baranowski et al., "Nitrogen-related changes in exciton localization and dynamics in GaInNAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy," Applied Physics A : Materials Science & Processing, vol. 118, no. 2, s. 479-486, 2015.
[24]
Y. Xiang et al., "Performance Optimization of GaAs-Based Vertical-Cavity Surface-Emitting Transistor-Lasers," IEEE Photonics Technology Letters, vol. 27, no. 7, s. 721-724, 2015.
[25]
M. N. Akram et al., "Influence of base-region thickness on the performance of Pnp transistor-VCSEL," Optics Express, vol. 22, no. 22, s. 27398-27414, 2014.
[26]
O. Gustafsson et al., "A performance assessment of type-II interband In0.5Ga0.5Sb QD photodetectors," Infrared physics & technology, vol. 61, s. 319-324, 2013.
[27]
O. Gustafsson et al., "Long-wavelength infrared photoluminescence from InGaSb/InAs quantum dots," Infrared physics & technology, vol. 59, s. 89-92, 2013.
[28]
Y. Xiang et al., "Minority current distribution in InGaAs/GaAs transistor-vertical-cavity surface-emitting laser," Applied Physics Letters, vol. 102, no. 19, s. 191101, 2013.
[29]
X. Yu et al., "Room-temperature operation of transistor vertical-cavity surface-emitting laser," Electronics Letters, vol. 49, no. 3, s. 208-209, 2013.
[30]
Q. Wang et al., "Analysis of surface oxides on narrow bandgap III-V semiconductors leading towards surface leakage free IR photodetectors," Proceedings of SPIE, the International Society for Optical Engineering, vol. 8353, s. 835311, 2012.
[31]
O. Gustafsson et al., "Photoluminescence and photoresponse from InSb/InAs-based quantum dot structures," Optics Express, vol. 20, no. 19, s. 21264-21271, 2012.
[32]
R. C. Jayasinghe et al., "Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films," Journal of Physics : Condensed Matter, vol. 24, no. 43, s. 435803, 2012.
[33]
H. Yang et al., "Transfer-printed stacked nanomembrane lasers on silicon," Nature Photonics, vol. 6, no. 9, s. 615-620, 2012.
[34]
A. Z. Zhang et al., "Fabrication of an electro-absorption transceiver with a monolithically integrated optical amplifier for fiber transmission of 40-60 GHz radio signals," Semiconductor Science and Technology, vol. 26, no. 1, s. 014042, 2011.
[35]
W. Shi et al., "Invited Paper : Design and modeling of a transistor vertical-cavity surface-emitting laser," Optical and quantum electronics, vol. 42, no. 11-13, s. 659-666, 2011.
[36]
O. Gustafsson et al., "Long-wavelength infrared quantum-dot based interband photodetectors," Infrared physics & technology, vol. 54, no. 3, s. 287-291, 2011.
[37]
W. Yang et al., "Large-area InP-based crystalline nanomembrane flexible photodetectors," Applied Physics Letters, vol. 96, no. 12, s. 121107, 2010.
[38]
J. Y. Andersson et al., "Quantum structure based infrared detector research and development within Acreo's centre of excellence IMAGIC," Infrared physics & technology, vol. 53, no. 4, s. 227-230, 2010.
[39]
M. Chacinski et al., "Dynamic properties of electrically p-n confined, epitaxially regrown 1.27 μm InGaAs single-mode vertical-cavity surface-emitting lasers," IET optoelectronics, vol. 3, no. 3, s. 163-167, 2009.
[40]
M. Gholami et al., "Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy," Opto-Electronics Review, vol. 17, no. 3, s. 260-264, 2009.
[41]
E. Pougeoise et al., "Experimental study of the lasing modes of 1.3-ÎŒm highly strained InGaAs-GaAs quantum-well oxide-confined VCSELs," IEEE Photonics Technology Letters, vol. 21, no. 6, s. 377-379, 2009.
[42]
R. Marcks von Würtemberg et al., "Performance optimisation of epitaxially regrown 1.3-μm vertical-cavity surface-emitting lasers," IET Optoelectronics, vol. 3, no. 2, s. 112-121, 2009.
[43]
M. Gholami et al., "Alternation of band gap and localization of excitons in InGaNAs nanostructures with low nitrogen content," Nanotechnology, vol. 19, no. 31, 2008.
[44]
R. Marcks von Würtemberg et al., "High-power InGaAs/GaAs 1.3 mu m VCSELs based on novel electrical confinement scheme : Erratum," Electronics Letters, vol. 44, no. 13, 2008.
[45]
R. Marcks von Würtemberg et al., "High-power InGaAs/GaAs 1.3 μm VCSELs based on novel electrical confinement scheme," Electronics Letters, vol. 44, no. 6, s. 414-416, 2008.
[46]
P. Westbergh et al., "Noise, distortion and dynamic range of single mode 1.3 mu m InGaAs vertical cavity surface emitting lasers for radio-over-fibre links," , vol. 2, no. 2, s. 88-95, 2008.
[47]
Z. Zhang, J. Berggren och M. Hammar, "On the long-wavelength optimization of highly strained InGaAs/GaAs quantum wells grown by metal-organic vapor-phase epitaxy," Journal of Crystal Growth, vol. 310, no. 13, s. 3163-3167, 2008.
[48]
E. Söderberg et al., "High-temperature dynamics, high-speed modulation, and transmission experiments using 1.3-mu m InGaAs single-mode VCSELs," Journal of Lightwave Technology, vol. 25, no. 9, s. 2791-2798, 2007.
[49]
Z. Zhang et al., "Optical loss and interface morphology in AlGaAs/GaAs distributed Bragg reflectors," Applied Physics Letters, vol. 91, no. 10, s. 101101, 2007.
[50]
E. Soderberg et al., "Suppression of higher order transverse and oxide modes in 1.3-mu m InGaAsVCSELs by an inverted surface relief," IEEE Photonics Technology Letters, vol. 19, no. 08-maj, s. 327-329, 2007.
[51]
E. Söderberg et al., "High speed, high temperature operation of 1.28-μm singlemode InGaAs VCSELs," Electronics Letters, vol. 42, no. 17, s. 978-979, 2006.
[52]
E. Pougeoise et al., "Strained InGaAs quantum well vertical cavity surface emitting lasers emitting at 1.3 mu m," Electronics Letters, vol. 42, no. 10, s. 584-586, 2006.
[53]
P. Sundgren et al., "Highly strained InGaAs/GaAs multiple quantum-wells for laser applications in the 1200-1300-nm wavelength regime," Applied Physics Letters, vol. 87, no. 7, s. 071104, 2005.
[54]
M. Chacinski et al., "Single-mode 1.27 μm InGaAs vertical cavity surface-emitting lasers with temperature-tolerant modulation characteristics," Applied Physics Letters, vol. 86, no. 21, s. 211109-1-211109-3, 2005.
[55]
R. Marcks von Würtemberg et al., "1.3 μm InGaAs vertical-cavity surface-emitting lasers with mode filter for single mode operation," Applied Physics Letters, vol. 85, no. 21, s. 4851-4853, 2004.
[56]
R. Marcks von Würtemberg et al., "Fabrication and performance of 1.3-μm vertical cavity surface emitting lasers with InGaAs quantum well active regions grown on GaAs substrates," Proceedings of SPIE, the International Society for Optical Engineering, vol. 5443, s. 229-239, 2004.
[57]
J. Misiewicz et al., "Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells," Journal of Physics : Condensed Matter, vol. 16, no. 31, s. S3071-S3094, 2004.
[58]
F. Olsson et al., "Selective area growth of GaInNAs/GaAs by MOVPE," Physica. E, Low-Dimensional systems and nanostructures, vol. 23, no. 04-mar, s. 347-351, 2004.
[59]
S. Mogg et al., "Temperature sensitivity of the threshold current of long-wavelength InGaAs/GaAs VCSELs with large gain-cavity detuning," IEEE Journal of Quantum Electronics, vol. 40, no. 5, s. 453-462, 2004.
[60]
P. Sundgren et al., "High-performance 1.3-μm InGaAs vertical cavity surface emitting lasers," Electronics Letters, vol. 39, no. 15, s. 1128-1129, 2003.
[61]
J. Vukusic et al., "MOVPE-grown GaInNAsVCSELs at 1.3 mu m with conventional mirror design approach," Electronics Letters, vol. 39, no. 8, s. 662-664, 2003.
[62]
P. Sundgren et al., "Morphological instability of GaInNAs quantum wells on Al-containing layers grown by metalorganic vapor-phase epitaxy," Applied Physics Letters, vol. 82, no. 15, s. 2431-2433, 2003.
[63]
R. Kudrawiec et al., "The nature of optical transitions in Ga0.64In0.36As1-xNx/GaAs single quantum wells with low nitrogen content (x <= 0.008)," Solid State Communications, vol. 127, no. 10-sep, s. 613-618, 2003.
[64]
C. Asplund et al., "1260 nm InGaAs vertical-cavity lasers," Electronics Letters, vol. 38, no. 13, s. 635-636, 2002.
[65]
S. Mogg et al., "Absolute reflectance measurements by a modified cavity phase-shift method," Review of Scientific Instruments, vol. 73, no. 4, s. 1697-1701, 2002.
[66]
G. Y. Plaine et al., "Low-temperature metal-organic vapor-phase epitaxy growth and performance of 1.3-mu m GaInNAs/GaAs single quantum well lasers," Japanese Journal of Applied Physics, vol. 41, no. 2B, s. 1040-1042, 2002.
[67]
S. Mogg et al., "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-mu m laser diodes," Applied Physics Letters, vol. 81, no. 13, s. 2334-2336, 2002.
[68]
C. Asplund et al., "Doping-induced losses in AlAs/GaAs distributed Bragg reflectors," Journal of Applied Physics, vol. 90, no. 2, s. 794-800, 2001.
[69]
F. Salomonsson et al., "Low-threshold, high-temperature operation of 1.2 mu m InGaAs vertical cavity lasers," Electronics Letters, vol. 37, no. 15, s. 957-958, 2001.
[70]
L. Largeau et al., "Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice," Applied Physics Letters, vol. 79, no. 12, s. 1795-1797, 2001.
[71]
L. Sagalowicz et al., "Defects, structure, and chemistry of InP-GaAs interfaces obtained by wafer bonding," Journal of Applied Physics, vol. 87, no. 9, s. 4135-4146, 2000.
[72]
K. Streubel et al., "Novel technologies for 1.55-mu m vertical cavity lasers," Optical Engineering : The Journal of SPIE, vol. 39, no. 2, s. 488-497, 2000.
[73]
S. Rapp et al., "All-epitaxial single-fused 1.55 ÎŒm vertical cavity laser based on an InP bragg reflector," Japanese Journal of Applied Physics, vol. 38, no. 2 B, s. 1261-1264, 1999.
[74]
J. Bentell et al., "Characterisation of n-InP/n-GaAs Wafer Fused Heterojunctions," Physica scripta. T, vol. 79, s. 206-208, 1999.
[75]
S. Rapp et al., "Near room-temperature continuous-wave operation of electrically pumped 1.55 ÎŒm vertical cavity lasers with InGaAsP/InP bottom mirror," Electronics Letters, vol. 35, no. 1, s. 49-50, 1999.
[76]
O. Bowallius et al., "Scanning Capacitance Microscopy for Two-Dimensional Doping Profiling in Si- and InP-Based Device Structures," Physica Scripta T, vol. 79, s. 163-166, 1999.
[77]
O. Bowallius et al., "Scanning capacitance microscopy investigations of buried heterostructure laser structures," Applied Surface Science, vol. 144-145, no. 0, s. 137-140, 1999.
[78]
M. Hammar et al., "Systematics of electrical conductivity across InP to GaAs wafer-fused interfaces," Japanese Journal of Applied Physics, vol. 38, no. 2 B, s. 1111-1114, 1999.
[79]
M. Hammar et al., "Topography dependent doping distribution in selectively regrown InP studied by scanning capacitance microscopy," Applied Physics Letters, vol. 72, no. 7, s. 815-817, 1998.
[80]
F. Salomonsson et al., "Wafer fused p-InP/p-GaAs heterojunctions," Journal of Applied Physics, vol. 83, no. 2, s. 768-774, 1998.
[81]
L. Sagalowicz et al., "Structure of the wafer fused InP (001)-GaAs (001) interface," Philosophical Magazine Letters, vol. 76, no. 6, s. 445-452, 1997.
[82]
M. Hammar, B. E. Steele och I. S. T. Tsong, "Impact-collision ion-scattering spectrometry studies of the VC0.8(111)-(8 Ã 1) surface," Nuclear Inst. and Methods in Physics Research, B, vol. 85, no. 1-4, s. 429-434, 1994.
[83]
M. Hammar et al., "Scanning tunnelling microscopy studies of Pt80Fe 20(110)," Journal of Physics: Condensed Matter, vol. 5, no. 18, s. 2837-2842, 1993.
Konferensbidrag
[84]
S. Gyger et al., "Metropolitan Single-Photon Distribution at 1550 nm for Random Number Generation," i 2023 Conference on Lasers and Electro-Optics, CLEO 2023, 2023.
[85]
S. Gyger et al., "Metropolitan Single-Photon Distribution at 1550 nm for Random Number Generation," i Quantum 2.0: Proceedings Optica Quantum 2.0 Conference and Exhibition, 2023.
[86]
S. Gyger et al., "Metropolitan Single-Photon Distribution at 1550 nm for Random Number Generation," i CLEO: Fundamental Science, CLEO:FS 2023, 2023.
[87]
C. Reuterskiöld-Hedlund et al., "Buried tunnel junction current injection for InP-based nanomembrane photonic crystal surface emitting lasers on Silicon," i 2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019.
[88]
S.-C. Liu et al., "Electrically Pumped Hybrid III-V/Si Photonic Crystal Surface Emitting Lasers with Buried Tunnel-Junction," i 2018 conference on lasers and electro-optics (CLEO), 2018.
[89]
S. -. Liu et al., "Electrically pumped hybrid III-V/Si photonic crystal surface emitting lasers with buried tunnel-junction," i Optics InfoBase Conference Papers, 2018.
[90]
S. -. Liu et al., "Lateral size scaling of photonic crystal surface-emitting lasers on Si," i Optics InfoBase Conference Papers, 2017.
[91]
S.-C. Liu et al., "Photonic Crystal Surface-Emitting Lasers on Silicon Substrates," i 2017 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES (SUM), 2017, s. 77-78.
[92]
S. -. Liu et al., "Photonic crystal surface-emitting lasers on bulk silicon substrate," i Optics InfoBase Conference Papers, 2017.
[93]
W. Zhou et al., "Printed photonic crystal membrane lasers on silicon," i Asia Communications and Photonics Conference, ACP, 2016.
[94]
S.-C. Liu et al., "Room Temperature Photonic Crystal Bandedge Membrane Lasers on SOI Substrates," i 2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2016.
[95]
S. C. Liu et al., "Room Temperature Photonic Crystal Bandedge Membrane Lasers on SOI Substrates," i CLEO: Applications and Technology, CLEO AT 2016, 2016.
[96]
D. Zhao et al., "Design and Characterization of Photonic Crystal Bandedge Surface-emitting Lasers on Silicon," i 2015 PHOTONICS CONFERENCE (IPC), 2015.
[97]
S. Liu et al., "Printed photonic crystal bandedge surface-emitting lasers on silicon," i CLEO: Science and Innovations, 2015.
[98]
S. Iezekiel och M. Hammar, "Transistor lasers and their expected applications in microwave photonics," i 2015 17th International Conference on Transparent Optical Networks (ICTON), 2015.
[99]
W. Zhou et al., "Printed photonic crystal membrane lasers on silicon," i Optics InfoBase Conference Papers, 2014.
[100]
W. Fan et al., "Electrically-pumped membrane-reflector surface-emitters on silicon," i 2013 IEEE Photonics Society Summer Topical Meeting Series, PSSTMS 2013, 2013, s. 19-20.
[101]
W. Fan et al., "Fabrication of electrically-pumped resonance-cavity membrane-reflector surface-emitters on silicon," i 2013 IEEE Photonics Conference (IPC), 2013, s. 643-644.
[102]
A. Karim et al., "In(Ga)Sb/InAs quantum dot based IR photodetectors with thermally activated photoresponse," i Proceedings of SPIE 8704, Infrared Technology and Applications XXXIX, 2013, s. 870434.
[103]
M. Hammar et al., "Room-temperature operation of 980-nm transistor-vertical-cavity surface-emitting lasers," i 2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013, 2013, s. 141-142.
[104]
Q. Wang et al., "Surface states characterization and simulation of type-II In(Ga)Sb quantum dot structures for processing optimization of LWIR detectors," i Proceedings of SPIE, Infrared Technology and Applications XXXIX, 2013, s. 870433.
[105]
A. Karim et al., "Characterization of InSb QDs grown on InAs (100) substrate by MBE and MOVPE," i Proc SPIE Int Soc Opt Eng, 2012.
[106]
D. Zhao et al., "Transfer printed photonic crystal nanomembrane lasers on silicon with low optical pumping threshold," i Group IV Photonics (GFP), 2012 IEEE 9th International Conference on, 2012, s. 632418.
[107]
W. Yang et al., "Frame-assisted membrane transfer for large area optoelectronic devices on flexible substrates," i 2011 IEEE Winter Topicals, WTM 2011, 2011, s. 113-114.
[108]
W. Yang et al., "Flexible solar cells based on stacked crystalline semiconductor nanomembranes on plastic substrates," i Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference : 2010 Laser Science to Photonic Applications, CLEO/QELS 2010, 2010, s. 5501105.
[109]
W. Shi et al., "Self-consistent modeling of a transistor vertical-cavity surface-emitting laser," i 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010, 2010, s. 45-46.
[110]
X. Yu et al., "Single-mode InGaAs/GaAs 1.3-mu m VCSELs Based on a Shallow Intracavity Patterning," i SEMICONDUCTOR LASERS AND LASER DYNAMICS IV, 2010, s. 772021.
[111]
W. Yang et al., "Crystalline silicon nanomembrane stacking for large-area flexible photodetectors," i IEEE International Conference on Group IV Photonics GFP, 2009, s. 110-112.
[112]
H. Martijn et al., "Development of IR imaging at IRnova," i Infrared Technology and Applications XXXV, 2009.
[113]
O. Gustafsson et al., "GaSb/Ga0.51In0.49P self assembled quantum dots grown by MOVPE," i Proceedings from EW-MOVPE XIII, 2009, s. 273-276.
[114]
R. Stevens et al., "Microstructured photonic crystal for single-mode long wavelength VCSELs," i Semiconductor Lasers and Laser Dynamics III, 2008.
[115]
P. Westbergh et al., "Single mode 1.3 ÎŒm InGaAs VCSELs for access network applications," i Semiconductor Lasers and Laser Dynamics III, 2008.
[116]
P. Gilet et al., "1.3 μm VCSELs : InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots- Three candidates as active material," i Vertical - Cavity Surface - Emitting Lasers XI, 2007, s. F4840-F4840.
[117]
E. Söderberg et al., "Transmission Experiments using 1.3 um Single Mode InGaAs VCSELs," i The European Conference on Lasers and Electro-Optics (CLEO_Europe) 2007, 2007.
[118]
E. Söderberg et al., "Transmission experiments using 1.3 ÎŒn single mode InGaAs VCSELs," i Conference on Lasers and Electro-Optics Europe - Technical Digest, 2007.
[119]
E. Pougeoise et al., "1.3 ÎŒm strained InGaAs quantum well VCSELs : Operation characteristics and transverse modes analysis," i Vertical-Cavity Surface-Emitting Lasers X, 2006, s. 13207-13207.
[120]
R. Marcks von Würtemberg et al., "A novel electrical and optical confinement scheme for surface emitting optoelectronic devices," i WORKSHOP ON OPTICAL COMPONENTS FOR BROADBAND COMMUNICATION, 2006, s. 63500J-1-63500J-10.
[121]
E. Pougeoise et al., "Experimental characteristics and analysis of transverse modes in 1.3 μm strained InGaAs quantum well VCSELs," i Proc SPIE Int Soc Opt Eng, 2006.
[122]
Q. Wang et al., "Multilayer InAs/InGaAs quantum dot structure grown by MOVPE for optoelectronic device applications," i Nanoengineering: Fabrication, Properties, Optics, and Devices III, 2006, s. L3270-L3270.
[123]
E. Söderberg et al., "Single mode 1.28 ÎŒm InGaAs VCSELs using an inverted surface relief," i Conference Digest - IEEE International Semiconductor Laser Conference, 2006, s. 123-124.
[124]
M. Hammar et al., "1.3-mu m InGaAs vertical-cavity surface-emitting lasers," i 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), 2005, s. 396-397.
[125]
S. Bernabé et al., "Highly integrated VCSEL-based 10Gb/s miniature optical sub-assembly," i Proceedings - Electronic Components and Technology Conference, 2005, s. 1333-1338.
[126]
M. Chacinski et al., "1.3 um InGaAs VCSELs: Influence of the Large Gain-Cavity Detuning on the Modulation and Static Performance," i Proc. of 30th European Conference on Optical Communication 2004, 2004.
[127]
P. Sundgren, M. Hammar och J. Berggren, "Optimization of highly strained InGaAs quantum wells for 1.3-μm vertical-cavity lasers," i Proc. 10th European Workshop on Metalorganic Vapour Phase Epitaxy, Lecce, Italy, 8-11 June 2003, 2003, s. 247-250.
[128]
S. Mogg et al., "High-performance 1.2- mu;m highly strained InGaAs/GaAs quantum well lasers," i Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th, 2002, s. 107-110.
[129]
C. Asplund, M. Hammar och P. Sundgren, "Optimization of MOVPE-grown GaInNAs/GaAs quantum wells for 1.3-μm laser applications," i Proc. 14th Indium Phosphide and Related Materials Conference, Stockholm, Sweden, 12-16 May 2002, 2002.
[130]
P. Sundgren et al., "Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3-μm lasers using metal-organic vapor-phase epitaxy," i Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On, 2001, s. 563-566.
Icke refereegranskade
Artiklar
[131]
M. Hammar, A. Hallén och S. Lourdudoss, "Compound Semiconductors," Physica Status Solidi (a) applications and materials science, vol. 219, no. 4, 2022.
Konferensbidrag
[132]
C. Reuterskiöld Hedlund et al., "Epitaxial growth, fabrication and analysis of vertical-cavity surface-emitting transistor lasers," i EWMOVPE, 2015.
[133]
X. Yu et al., "1.3 μm Buried Tunnel junction InGaAs/GaAs VCSELs," i 37th Workshop on Compound Semiconductor Device and Integrated Circuits held in Europe, Rostock, Germany, 2013.
Övriga
[134]
Y. Xiang et al., "AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers," (Manuskript).
[135]
K. Zeuner et al., "On-demand generation of entangled photon pairs in the telecom C-band for fiber-based quantum networks," (Manuskript).
[136]
T. Lettner et al., "Strain-controlled quantum dot fine-structure for entangled-photon generation at 1550 nm," (Manuskript).
Senaste synkning med DiVA:
2024-12-22 02:40:35