Publications by Anders Hallén
Refereegranskade
Artiklar
[1]
Y. Su et al., "Monolithic Fabrication of Metal‐Free On‐Paper Self‐Charging Power Systems," Advanced Functional Materials, 2024.
[2]
A. Siddiqui et al., "Carrier removal rates in 4H–SiC power diodes : A predictive analytical model," Materials Science in Semiconductor Processing, vol. 167, 2023.
[3]
M. Zubkins et al., "Deposition of Ga2O3 thin films by liquid metal target sputtering," Vacuum, vol. 209, pp. 111789, 2023.
[4]
T. T. Tran et al., "High hole mobility and non-localized states in amorphous germanium," APL Materials, vol. 11, no. 4, pp. 041115, 2023.
[5]
A. Metreveli et al., "In Situ Gamma Irradiation Effects on 4H-SiC Bipolar Junction Transistors," IEEE Transactions on Nuclear Science, vol. 70, no. 12, pp. 2597-2604, 2023.
[6]
H. M. Ayedh et al., "Carbon vacancy control in p(+)-n silicon carbide diodes for high voltage bipolar applications," Journal of Physics D : Applied Physics, vol. 54, no. 45, 2021.
[7]
M. Usman et al., "Comparative study of proton and helium elastic scatterings from nitrogen in GaN," Materials Science in Semiconductor Processing, vol. 121, 2021.
[8]
M. Hammar, A. Hallén and S. Lourdudoss, "Compound Semiconductors," Physica status solidi. B, Basic research, vol. 258, no. 2, 2021.
[9]
D. Rwegasira et al., "Energy trading and control of islanded DC microgrid using multi-agent systems," Multiagent and Grid Systems, vol. 17, no. 2, pp. 113-128, 2021.
[10]
H. Khelidj et al., "Ge(Sn) growth on Si(001) by magnetron sputtering," Materials Today Communications, vol. 26, 2021.
[11]
M. K. Linnarsson, L. Vines and A. Hallén, "Influence from the electronic shell structure on the range distribution during channeling of 40-300 keV ions in 4H-SiC," Journal of Applied Physics, vol. 130, no. 7, 2021.
[12]
S. Khartsev et al., "Reverse‐Bias Electroluminescence in Er‐Doped β‐Ga 2 O 3 Schottky Barrier Diodes Manufactured by Pulsed Laser Deposition," Physica Status Solidi (a) applications and materials science, vol. 219, no. 4, pp. 2100610-2100610, 2021.
[13]
D. Johannesson et al., "Static and Dynamic Performance Prediction of Ultra-High-Voltage Silicon Carbide Insulated-Gate Bipolar Transistors," IEEE transactions on power electronics, vol. 36, no. 5, pp. 5874-5891, 2021.
[14]
A. Azarov et al., "Effects of annealing on photoluminescence and defect interplay in ZnO bombarded by heavy ions : Crucial role of the ion dose," Journal of Applied Physics, vol. 127, no. 2, 2020.
[15]
S. Khartsev et al., "High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition," Physica status solidi. B, Basic research, vol. 258, no. 2, pp. 2000362-2000362, 2020.
[16]
K. Tia et al., "Modelling the static on-state current voltage characteristics for a 10 kV 4H-SiC PiN diode," Materials Science in Semiconductor Processing, vol. 115, 2020.
[17]
K. Tian et al., "An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss," IEEE Transactions on Electron Devices, vol. 66, no. 5, pp. 2307-2313, 2019.
[18]
M. K. Linnarsson et al., "Channeling implantations of p-type dopants into 4H-SiC at different tempertures," Materials Science Forum, vol. 963, pp. 382-385, 2019.
[19]
K. Tian et al., "Comprehensive Characterization of the 4H-SiC Planar and Trench Gate MOSFETs From Cryogenic to High Temperature," IEEE Transactions on Electron Devices, vol. 66, no. 10, pp. 4279-4286, 2019.
[20]
A. Azarov et al., "Defect annealing kinetics in ZnO implanted with Zn substituting elements : Zn interstitials and Li redistribution," Journal of Applied Physics, vol. 125, no. 7, 2019.
[21]
S. Majdi et al., "High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors," Review of Scientific Instruments, vol. 90, no. 6, 2019.
[22]
M. Linnarsson, A. Hallén and L. Vines, "Influence of a thin amorthous layer on de-channeling during aluminum implantation at different temperatures into 4H-SiC," Applied Physics A : Materials Science & Processing, vol. 125, no. 12, 2019.
[23]
M. Linnarsson, A. Hallén and L. Vines, "Intentional and unintentional channeling during implantation of 51V ions into 4H-SiC," Semiconductor Science and Technology, vol. 34, pp. 1-10, 2019.
[24]
J. Woerle et al., "Interaction of low-energy muons with defect profiles in proton-irradiated Si and 4H-SiC," Physical Review B, vol. 100, no. 11, 2019.
[25]
T. Luo et al., "Combined effect of Pt and Walloying elements on Ni-silicide formation," Journal of Applied Physics, vol. 123, no. 12, 2018.
[26]
S. S. Suvanam et al., "Extreme radiation hard thin film CZTSSe solar cell," Solar Energy Materials and Solar Cells, vol. 185, pp. 16-20, 2018.
[27]
T. Chulapakorn et al., "Impact of H-uptake by forming gas annealing and ion implantation on photoluminescence of Si-nanoparticles," Physica Status Solidi (a) applications and materials science, vol. 215, no. 3, 2018.
[28]
S. S. Suvanam et al., "Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC," Applied Surface Science, vol. 433, pp. 108-115, 2018.
[29]
M. Usman et al., "Improving the quality of Al2O3/4H-SiC interface for device applications," Materials Science in Semiconductor Processing, vol. 81, pp. 118-121, 2018.
[30]
T. Chulapakorn et al., "Luminescence of silicon nanoparticles from oxygen implanted silicon," Materials Science in Semiconductor Processing, vol. 86, pp. 18-22, 2018.
[31]
C.-M. Zetterling et al., "Bipolar integrated circuits in SiC for extreme environment operation," Semiconductor Science and Technology, vol. 32, no. 3, 2017.
[32]
A. Azarov et al., "Extended defects in ZnO : Efficient sinks for point defects," Applied Physics Letters, vol. 110, no. 2, 2017.
[33]
T. Chulapakorn et al., "Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2," Nanotechnology, vol. 28, 2017.
[34]
M. K. Linnarsson et al., "Interface between Al2O3 and 4H-SiC investigated by time-of-flight medium energy ion scattering," Journal of Physics D : Applied Physics, vol. 50, no. 49, 2017.
[35]
M. Rubel et al., "Metallic mirrors for plasma diagnosis in current and future reactors : tests for ITER and DEMO," Physica Scripta, vol. T170, 2017.
[36]
H. M. Ayedh et al., "Thermodynamic equilibration of the carbon vacancy in 4H-SiC : A lifetime limiting defect," Journal of Applied Physics, vol. 122, no. 2, 2017.
[37]
L. H. Karlsson et al., "Atomically resolved microscopy of ion implantation induced dislocation loops in 4H-SiC," Materials letters (General ed.), vol. 181, pp. 325-327, 2016.
[38]
S. S. Suvanam et al., "High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits," IEEE Transactions on Nuclear Science, 2016.
[39]
A. Garcia-Carrasco et al., "Impact of helium implantation and ion-induced damage on reflectivity of molybdenum mirrors," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, 2016.
[40]
A. Hallén and M. K. Linnarsson, "Ion implantation technology for silicon carbide," Surface & Coatings Technology, vol. 306, pp. 190-193, 2016.
[41]
T. Chulapakorn et al., "MeV ion irradiation effects on the luminescence properties of Si-implanted SiO2-thin films," Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 13, no. 10-12, pp. 921-926, 2016.
[42]
M. Usman et al., "Stoichiometry of the ALD-Al2O3/4H-SiC interface by synchrotron-based XPS," Journal of Physics D : Applied Physics, vol. 49, no. 25, 2016.
[43]
S. S. Suvanam et al., "4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption," Journal of Applied Physics, vol. 117, no. 10, 2015.
[44]
H. M. Ayedh et al., "Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures," Applied Physics Letters, vol. 107, no. 25, 2015.
[45]
H. M. Ayedh, A. Hallén and B. G. Svensson, "Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation : Influence of the ion species," Journal of Applied Physics, vol. 118, no. 17, 2015.
[46]
M. Usman, A. Hallen and A. Nazir, "Ion implantation induced nitrogen defects in GaN," Journal of Physics D : Applied Physics, vol. 48, no. 45, 2015.
[47]
A. Zamani et al., "Magnetic properties of amorphous Fe93Zr7 films : Effect of light ion implantation," Journal of Applied Physics, vol. 117, no. 14, 2015.
[48]
A. Azarov et al., "Optical activity and defect/dopant evolution in ZnO implanted with Er," Journal of Applied Physics, vol. 118, no. 12, 2015.
[49]
T. Chulapakorn et al., "Si-nanoparticle synthesis using ion implantation and MeV ion irradiation," Physica Status Solidi (C) Current Topics in Solid State Physics, 2015.
[50]
S. S. Suvanam et al., "Tailoring the interface between dielectric and 4H-SiC by ion implantation," Materials Science Forum, vol. 821-823, pp. 488-491, 2015.
[51]
P. C. Lansåker et al., "Characterization of gold nanoparticle films : Rutherford backscattering spectroscopy, scanning electron microscopy with image analysis, and atomic force microscopy," AIP Advances, vol. 4, no. 10, pp. 107101, 2014.
[52]
A. Y. Azarov et al., "Effect of implanted species on thermal evolution of ion-induced defects in ZnO," Journal of Applied Physics, vol. 115, no. 7, pp. 073512, 2014.
[53]
S. S. Suvanam et al., "Effects of 3-MeV Protons on 4H-SiC Bipolar Devices and Integrated OR-NOR Gates," IEEE Transactions on Nuclear Science, vol. 61, no. 4, pp. 1772-1776, 2014.
[54]
A. Salemi et al., "Fabrication and Design of 10 kV PiN Diodes Using On-axis 4H-SiC," Materials Science Forum, vol. 778-780, pp. 836-840, 2014.
[55]
H. M. Ayedh et al., "Formation of carbon vacancy in 4H silicon carbide during high-temperature processing," Journal of Applied Physics, vol. 115, no. 1, pp. 012005, 2014.
[56]
T. Kobayashi et al., "Ion-stimulated desorption in the medium-energy regime," Japanese Journal of Applied Physics, vol. 53, no. 6, pp. 060305, 2014.
[57]
R. Moubah et al., "Origin of the anomalous temperature dependence of coercivity in soft ferromagnets," Journal of Applied Physics, vol. 116, no. 5, pp. 053906, 2014.
[58]
A. Hallén et al., "Passivation of SiC device surfaces by aluminum oxide," IOP Conference Series : Materials Science and Engineering, vol. 56, no. 1, pp. 012007, 2014.
[59]
A. Hallén and G. Moschetti, "RBS channeling measurement of damage annealing in InAs/AlSb HEMT structures," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 332, pp. 172-175, 2014.
[60]
F. Issa et al., "Radiation silicon carbide detectors based on ion implantation of boron," IEEE Transactions on Nuclear Science, vol. 61, no. 4, pp. 2105-2111, 2014.
[61]
M. K. Linnarsson and A. Hallén, "Sodium diffusion in 4H-SiC," APL Materials, vol. 2, no. 9, pp. 096106, 2014.
[62]
M. K. Linnarsson et al., "ToF-MEIS stopping measurements in thin SiC films," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 332, pp. 130-133, 2014.
[63]
D. Primetzhofer et al., "Ultra-thin film and interface analysis of high-k dielectric materials employing Time-Of-Flight Medium Energy Ion Scattering (TOF-MEIS)," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 332, pp. 212-215, 2014.
[64]
S.-Y. Li et al., "Bandgap widening in thermochromic Mg-doped VO2 thin films : Quantitative data based on optical absorption," Applied Physics Letters, vol. 103, no. 16, pp. 161907, 2013.
[65]
R. Nipoti et al., "Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC," Journal of Materials Research, vol. 28, no. 1, pp. 17-22, 2013.
[66]
A. Jamshidi et al., "Growth of GeSnSiC layers for photonic applications," Surface & Coatings Technology, vol. 230, pp. 106-110, 2013.
[67]
P. D. Edmondson et al., "Helium bubble distributions in a nanostructured ferritic alloy," Journal of Nuclear Materials, vol. 434, no. 1-3, pp. 210-216, 2013.
[68]
M. Usman, C. Henkel and A. Hallén, "HfO2/Al2O3 bilayered high-k dielectric for passivation and gate insulator in 4H-SiC devices," ECS Journal of Solid State Science and Technology, vol. 2, no. 8, pp. N3087-N3091, 2013.
[69]
E. Dentoni Litta et al., "High-Deposition-Rate Atomic Layer Deposition of Thulium Oxide from TmCp3 and H2O," Journal of the Electrochemical Society, vol. 160, no. 11, pp. D538-D542, 2013.
[70]
Y. Song et al., "Molecular beam epitaxy growth of InSb1-xBix thin films," Journal of Crystal Growth, vol. 378, pp. 323-328, 2013.
[71]
M. Usman, M. Nawaz and A. Hallén, "Position-dependent bulk traps and carrier compensation in 4H-SiC bipolar junction transistors," IEEE Transactions on Electron Devices, vol. 60, no. 1, pp. 178-185, 2013.
[72]
R. Moubah et al., "Soft Room-Temperature Ferromagnetism of Carbon-Implanted Amorphous Fe93Zr7 Films," APPL PHYS EXPRESS, vol. 6, no. 5, pp. 053001, 2013.
[73]
G. Moschetti et al., "True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications," Solid-State Electronics, vol. 79, pp. 268-273, 2013.
[74]
A. Zamani et al., "Tuning magnetic properties by hydrogen implantation in amorphous Fe100-xZrx thin films," Journal of Magnetism and Magnetic Materials, vol. 346, pp. 138-141, 2013.
[75]
C. M. Parish et al., "A Multi-Technique Approach to Understand Radiation-Tolerant Nanostructures," Microscopy and Microanalysis, vol. 18, no. S2, pp. 1430-1431, 2012.
[76]
A. Y. Azarov et al., "Annealing of ion implanted CdZnO," Journal of Physics D : Applied Physics, vol. 45, no. 23, pp. 235304, 2012.
[77]
A. Yu. Azarov et al., "Damage accumulation and annealing behavior in high fluence implanted MgZnO," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 272, pp. 426-429, 2012.
[78]
A. Audren, A. Hallén and G. Possnert, "Damage recovery in the oxygen sublattice of ZnO by post-implantation annealing," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 272, pp. 418-421, 2012.
[79]
Y. Song et al., "Growth of GaSb1-xBix by molecular beam epitaxy," Journal of Vacuum Science & Technology B, vol. 30, no. 2, pp. 02B114, 2012.
[80]
H. L. Liang et al., "Growth of single-phase Mg0.3Zn0.7O films suitable for solar-blind optical devices on RS-MgO substrates," Thin Solid Films, vol. 520, no. 6, pp. 1705-1708, 2012.
[81]
M. Usman, B. Buono and A. Hallén, "Impact of Ionizing Radiation on the SiO2/SiC Interface in 4H-SiC BJTs," IEEE Transactions on Electron Devices, vol. 59, no. 12, pp. 3371-3376, 2012.
[82]
J. -. Lee et al., "Local anodic oxidation of phosphorus-implanted 4H-SiC by atomic force microscopy," Materials Science Forum, vol. 717-720, pp. 905-908, 2012.
[83]
M. K. Linnarsson and A. Hallén, "Manganese in silicon carbide," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 273, pp. 127-130, 2012.
[84]
M. -. Kang et al., "Metal work-function and doping-concentration dependent barrier height of Ni-contacts to 4H-SiC with metal-embedded nano-particles," Materials Science Forum, vol. 717-720, pp. 857-860, 2012.
[85]
M. K. Linnarsson et al., "New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector," Review of Scientific Instruments, vol. 83, no. 9, pp. 095107, 2012.
[86]
G. Moschetti et al., "Planar InAs/AlSb HEMTs With Ion-Implanted Isolation," IEEE Electron Device Letters, vol. 33, no. 4, pp. 510-512, 2012.
[87]
J. M. Wikberg et al., "Annealing effects on structural and magnetic properties of Co implanted ZnO single crystals," Journal of Applied Physics, vol. 109, no. 8, pp. 083918, 2011.
[88]
P. T. Neuvonen et al., "Defect evolution and impurity migration in Na-implanted ZnO," Physical Review B. Condensed Matter and Materials Physics, vol. 84, no. 20, pp. 205202, 2011.
[89]
P. D. Edmondson et al., "Helium entrapment in a nanostructured ferritic alloy," Scripta Materialia, vol. 65, no. 8, pp. 731-734, 2011.
[90]
O. Gustafsson et al., "Long-wavelength infrared quantum-dot based interband photodetectors," Infrared physics & technology, vol. 54, no. 3, pp. 287-291, 2011.
[91]
R. Nipoti et al., "Microwave Annealing of Very High Dose Aluminum-Implanted 4H-SiC," APPL PHYS EXPRESS, vol. 4, no. 11, pp. 111301, 2011.
[92]
M. Usman and A. Hallén, "Radiation-Hard Dielectrics for 4H-SiC : A Comparison Between SiO(2) and Al(2)O(3)," IEEE Electron Device Letters, vol. 32, no. 12, pp. 1653-1655, 2011.
[93]
K. Gulbinas et al., "Surface Recombination Investigation in Thin 4H-SiC Layers," Materials Science-Medziagotyra, vol. 17, no. 2, pp. 119-124, 2011.
[94]
A. Yu. Azarov et al., "Thermally induced surface instability in ion-implanted Mg(x)Zn(1-x)O films," Physical Review B. Condensed Matter and Materials Physics, vol. 84, no. 1, pp. 014114, 2011.
[95]
M. Usman et al., "Toward the Understanding of Stacked Al-Based High-k Dielectrics for Passivation of 4H-SiC Devices," Journal of the Electrochemical Society, vol. 158, no. 1, pp. H75-H79, 2011.
[96]
M. Usman et al., "Annealing of ion implanted 4H-SiC in the temperature range of 100-800 degrees C analysed by ion beam techniques," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 268, no. 11-12, pp. 2083-2085, 2010.
[97]
A. Azarov et al., "Dopant incorporation in thin strained Si layers implanted with Sb," Thin Solid Films, vol. 518, no. 9, pp. 2474-2477, 2010.
[98]
M. Usman et al., "Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs," Physica Scripta, vol. T140, pp. 014012, 2010.
[99]
A. Yu. Azarov et al., "Effect of composition on damage accumulation in ternary ZnO-based oxides implanted with heavy ions," Journal of Applied Physics, vol. 108, no. 3, pp. 033509, 2010.
[100]
A. Hallén et al., "Low-Temperature Annealing of Radiation-Induced Degradation in 4H-SiC Bipolar Junction Transistors," IEEE Electron Device Letters, vol. 31, no. 7, pp. 707-709, 2010.
[101]
M. K. Linnarsson, A. Audren and A. Hallén, "Manganese in 4H-SiC," Materials Science Forum, vol. 645-648, pp. 701-704, 2010.
[102]
R. Spohr et al., "Stroke Asymmetry of Tilted Superhydrophobic Ion Track Textures," Langmuir, vol. 26, no. 9, pp. 6790-6796, 2010.
[103]
A. Yu. Azarov et al., "Structural damage in ZnO bombarded by heavy ions," Vacuum, vol. 84, no. 8, pp. 1058-1061, 2010.
[104]
A. Wolska et al., "Study of the Local Environment of Mn Ions Implanted in GaSb," Acta Physica Polonica. A, vol. 117, no. 2, pp. 286-292, 2010.
[105]
A. Azarov et al., "Effect of collision cascade density on radiation damage in SiC," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 267, no. 8-9, pp. 1247-1250, 2009.
[106]
M. Usman et al., "Electrical and structural characterization of ion implanted GaN," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 267, no. 8-9, pp. 1561-1563, 2009.
[107]
M. Wolborski et al., "Improved properties of AION/4H-SiC interface for passivation studies," Materials Science Forum, vol. 600-603, pp. 763-766, 2009.
[108]
B. Emmoth et al., "In-situ measurements of carbon and deuterium deposition using the fast reciprocating probe in TEXTOR," Journal of Nuclear Materials, vol. 390-91, pp. 179-182, 2009.
[109]
P. T. Neuvonen et al., "Interaction between Na and Li in ZnO," Applied Physics Letters, vol. 95, no. 24, 2009.
[110]
Z. L. Liu et al., "Solar-blind 4.55 eV band gap Mg0.55Zn0.45O components fabricated using quasi-homo buffers," Journal of Crystal Growth, vol. 311, no. 18, pp. 4356-4359, 2009.
[111]
A. Pinos et al., "Time-resolved luminescence studies of proton-implanted GaN," Applied Physics Letters, vol. 95, no. 11, 2009.
[112]
M. Gabrysch et al., "Compensation in boron-doped CVD diamond," , vol. 205, no. 9, pp. 2190-2194, 2008.
[113]
A. Y. Azarov et al., "Dopant distribution in high fluence Fe implanted GaN," Journal of Applied Physics, vol. 104, no. 5, 2008.
[114]
J. Wong-Leung et al., "Ion implantation in 4H-SiC," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 266, no. 8, pp. 1367-1372, 2008.
[115]
P. Petersson et al., "Mapping of hydrogen isotopes with a scanning nuclear microprobe," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 266, no. 10, pp. 2429-2432, 2008.
[116]
S. Intarasiri et al., "Activation energy of the growth of ion-beam-synthesized nano-crystalline 3C-SiC," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 257, pp. 195-198, 2007.
[117]
M. Wolborski et al., "Characterization of HfO films deposited on 4H-SiC by atomic layer deposition," Journal of Applied Physics, vol. 101, no. 12, pp. 124105, 2007.
[118]
S. Intarasiri et al., "Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si," Applied Surface Science, vol. 253, no. 11, pp. 4836-4842, 2007.
[119]
I. Sychugov et al., "Effect of photonic bandgap on luminescence from silicon nanocrystals," Optics Letters, vol. 32, no. 13, pp. 1878-1880, 2007.
[120]
S. Intarasiri et al., "Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide," Journal of Applied Physics, vol. 101, no. 8, 2007.
[121]
M. Wolborski et al., "Aluminium nitride deposition on 4H-SiC by means of physical vapour deposition," Thin Solid Films, vol. 515, pp. 456-459, 2006.
[122]
A. Hallén et al., "Annealing of Al implanted 4H silicon carbide," Physica Scripta, vol. T126, pp. 37-40, 2006.
[123]
M. Wolborski et al., "Characterisation of the Al2O3 films deposited by ultrasonic spray pyrolysis and atomic layer deposition methods for passivation of 4H–SiC devices," Microelectronics and reliability, vol. 46, pp. 743-755, 2006.
[124]
S. Intarasiri et al., "Characterization of the crystalline quality of beta-SiC formed by ion beam synthesis," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 249, pp. 851-855, 2006.
[125]
A. Galeckas et al., "Combined photoluminescence-imaging and deep-level transient spectroscopy of recombination processes at stacking faults in 4H-SiC," Physical Review B. Condensed Matter and Materials Physics, vol. 74, no. 23, 2006.
[126]
A. Suchodolskis et al., "Ion implantation damage annealing in 4H-SiC monitored by scanning spreading resistance microscopy," Thin Solid Films, vol. 515, no. 2, pp. 611-614, 2006.
[127]
P. O. A. Persson et al., "Ostwald ripening of interstitial-type dislocation loops in 4H-silicon carbide," Journal of Applied Physics, vol. 100, no. 5, 2006.
[128]
S. Intarasiri et al., "RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon-carbide synthesis study," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 249, pp. 859-864, 2006.
[129]
L. Vines et al., "Scanning probe microscopy of single Au ion implants in Si," Materials science & engineering. C, biomimetic materials, sensors and systems, vol. 26, no. 07-maj, pp. 782-787, 2006.
[130]
A. Suchodolskis et al., "Scanning spreading resistance microscopy of shallow doping profiles in silicon," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 253, no. 02-jan, pp. 141-144, 2006.
[131]
L. Vines et al., "Visualization of MeV ion impacts in Si using scanning capacitance microscopy," Physical Review B. Condensed Matter and Materials Physics, vol. 73, no. 8, 2006.
[132]
T. M. Borseth et al., "Annealing study of Sb+ and Al+ ion-implanted ZnO," Superlattices and Microstructures, vol. 38, no. 4-6, pp. 464-471, 2005.
[133]
H. Kortegaard Nielsen, A. Hallén and B. G. Svensson, "Capacitance transient study of the metastable M center in n-type 4H-SiC.," Physical Review B. Condensed Matter and Materials Physics, vol. 72, no. 8, 2005.
[134]
G. Alfieri et al., "Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide," Journal of Applied Physics, vol. 98, no. 11, 2005.
[135]
A. Razpet et al., "Fabrication of high-density ordered nanoarrays in silicon dioxide by MeV ion track lithography," Journal of Applied Physics, vol. 97, no. 4, 2005.
[136]
J. Slotte et al., "Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H-SiC," Journal of Applied Physics, vol. 97, no. 3, 2005.
[137]
T. V. Blank et al., "Temperature dependence of the photoelectric conversion quantum efficiency of 4H-SiC Schottky UV photodetectors," Semiconductor Science and Technology, vol. 20, no. 8, pp. 710-715, 2005.
[138]
Y. Zhang et al., "Annealing behavior of Al-implantation-induced disorder in 4H-SiC," Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 219, pp. 647-651, 2004.
[139]
D. M. Martin et al., "Bistable defect in mega-electron-volt proton implanted 4H silicon carbide," Applied Physics Letters, vol. 84, no. 10, pp. 1704-1706, 2004.
[140]
B. Y. Ber et al., "Determination of nitrogen in silicon carbide by secondary ion mass spectrometry," Journal of Analytical Chemistry, vol. 59, no. 3, pp. 250-254, 2004.
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2024-05-19 00:15:36