Coming Conference Presentations:
ICSCRM 2017 in Washington DC, September 17-22, 2017
TU.D1.4 Zetterling, C.-M. Extreme Environment SiC Integrated Circuits
WE.E1.5 Shakir, M. et al, Electrical Characterization of Integrated 2-input TTL NAND Gate at Elevated Temperature, Fabricated in Bipolar SiC-Technology
TH.CP.4 Ekström, M. et al, Low temperature Ni-Al ohmic contacts to p-type 4H-SiC using semi-salicide processing
Previous Conference Presentations:
Spring MRS 2016, session EP2: Silicon Carbide — Substrates, Epitaxy, Devices, Circuits and Graphene
High Temperature Integrated Amplifier in Bipolar 4H-SiC
Hedayati, R., Lanni, L., Rusu, A., and Zetterling, C.-M.
ICSCRM 2015 in Giardini Naxos, Italy (SiCily), October 4 – 9, 2015
A 500 °C Monolithic SiC BJT Latched Comparator
Tian, Y., Lanni, L., Rusu, A., and Zetterling, C.-M.
Geometrical Effect Dependency on the On-State Characteristics in 5.6 kV 4H-SiC BJTs
Salemi, A., Elahipanah, H., Zetterling, C.-M., and Östling, M.
Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices
Elahipanah, H., Salemi, A., Zetterling, C.-M., and Östling, M.
The 27th International Symposium on Power Semiconductor Devices and ICs
Area- and Efficiency-Optimized Junction Termination for a 5.6 kV SiC BJT Process with Low On-Resistance
Salemi, A., Elahipanah, H., Malm, G., Zetterling, C.-M., and Östling, M.
Conductivity Modulated On-Axis 4H-SiC 10+ kV Pin Diodes
Salemi, A., Elahipanah, H., Hallén, A., Malm, G., Zetterling, C.-M., and Östling, M.
A Monolithic SiC Drive Circuit for SiC Power BJTs
Kargarrazi, S., Lanni, L., Rusu, A., and Zetterling, C.-M.
ECSCRM 2014 in Grenoble, France, September 21 – 25, 2014
ECL-based SiC logic circuits for extreme temperatures
Lanni, L., Malm, B. G., Östling, M., and Zetterling, C.-M.
Tailoring the interface between dielectric and 4H-SiC by ion implantation Suvanam, S.S., Martin, D., Zetterling, C.-M., and Hallen, A.
Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC
Smedfors, K., Zetterling, C.-M., Östling
Design and Characterization of 500 °C Schmitt Trigger in 4H-SiC
Kargarrazi, S., Lanni, L., and Zetterling, C.-M.
Simulation study of the breakdown voltage in high voltage 4H-SiC BJT with respect to oxide and interface charges
Salemi, A., Elahipanah, H., Zetterling, C.-M., and Östling, M.
Implantation-Free 4H-SiC Bipolar Junction Transistor with Trenched Junction Termination Extension
Elahipanah, H., Salemi, A., Zetterling, C.-M., and Östling, M.
Spring MRS 2014, session DD: Silicon Carbide – Materials, Processing and Devices
DD3.01 High Voltage SiC Power Switches with Superior Energy Efficiency and Their Drive Electronics
Mikael Östling (invited)
DD3.04 Design, Fabrication and Characterization of High Voltage PiN Diodes Using On-Axis 4H-SiC
Salemi, A., Buono, B., Hallen, A., Ul Hassan, J., Bergman, P., Zetterling, C.-M., and Östling, M.
DD3.06 Integrated Silicon Carbide Bipolar Technology for Radio Frequency Applications
Malm, B. G., Lanni, L., and Zetterling, C.-M.
Technical program for ICSCRM 2013
Mo-P-38 p.60
Stable Ohmic Nickel/Titanium/Aluminium Contacts to 4H-SiC Characterized from -40°C to 500°C
K. Smedfors, L. Lanni, M. Östling, and C. -M. Zetterling
11:30 Th-2A-3 p.279
Fabrication of 10 kV PiN Diodes Using On-Axis 4H-SiC
A. Salemi, B. Buono, A. Hallén, J. Hassan, J. P. Bergman, C. -M. Zetterling, and M. Östling
11:30 Th-2B-3 p.284
Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor
J. -H. Xia, D. Martin, S. S. Suvanam, C. -M. Zetterling, and M. Östling
Th-P-41 p.337
SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs
L. Lanni, B. G. Malm, M. Östling, and C. -M. Zetterling
ICSCRM 2013
SiC Technologies for High Voltage Devices and Integrated Circuits in Harsh Environments
BCTM 2013 Short Course on GaN and SiC based wide-bandgap semiconductor designs: technologies, devices and circuits (part 1 of 4)
Instructor: Prof. Carl-Mikael Zetterling, KTH, Sweden
IEEE BCTM 2013
A 4H-SiC Bipolar Technology for High-temperature Integrated Circuits
Lanni, L., Malm, B. G., Zetterling, C.-M., Östling, M.
IMAPS HiTEN 2013
Effects of 3 MeV protons on 4H-SiC bipolar devices and integrated OR-NOR gate
Suvanam, S.S., Lanni, L., Zetterling, C.-M., Hallén, A., Malm, B.G.
RADECS 2013