Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 4117 | 1844 | 34.5 | 87% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
| 12 | 3 | DIAMOND AND RELATED MATERIALS//GRAPHENE//CARBON NANOTUBES | 130454 |
| 12 | 2 | GRAPHENE//GRAPHENE OXIDE//TRANSITION METAL DICHALCOGENIDES | 38220 |
| 4117 | 1 | GRAPHENE//GRAPHENE TRANSISTOR//GRAPHENE FIELD EFFECT TRANSISTOR | 1844 |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | GRAPHENE | authKW | 298874 | 28% | 3% | 520 |
| 2 | GRAPHENE TRANSISTOR | authKW | 166018 | 1% | 53% | 19 |
| 3 | GRAPHENE FIELD EFFECT TRANSISTOR | authKW | 149412 | 1% | 48% | 19 |
| 4 | GRAPHENE FET GFET | authKW | 115903 | 0% | 100% | 7 |
| 5 | GRAPHENE FIELD EFFECT TRANSISTORS GFETS | authKW | 115903 | 0% | 100% | 7 |
| 6 | GRAPHENE FET | authKW | 110377 | 1% | 67% | 10 |
| 7 | GRAPHENE FIELD EFFECT TRANSISTOR GFET | authKW | 90144 | 0% | 78% | 7 |
| 8 | CURRENT SATURATION | authKW | 75251 | 1% | 45% | 10 |
| 9 | EMERGING ELECT DEVICES SYST | address | 62326 | 0% | 47% | 8 |
| 10 | CHEMICAL VAPOR DEPOSITION CVD GRAPHENE | authKW | 59131 | 0% | 71% | 5 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Nanoscience & Nanotechnology | 9743 | 25% | 0% | 460 |
| 2 | Physics, Applied | 9530 | 46% | 0% | 857 |
| 3 | Physics, Condensed Matter | 7799 | 35% | 0% | 642 |
| 4 | Materials Science, Multidisciplinary | 2632 | 28% | 0% | 523 |
| 5 | Physics, Multidisciplinary | 873 | 11% | 0% | 212 |
| 6 | Engineering, Electrical & Electronic | 750 | 14% | 0% | 260 |
| 7 | Chemistry, Physical | 683 | 16% | 0% | 287 |
| 8 | Chemistry, Multidisciplinary | 634 | 15% | 0% | 270 |
| 9 | Multidisciplinary Sciences | 55 | 1% | 0% | 22 |
| 10 | Physics, Mathematical | 0 | 1% | 0% | 15 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | EMERGING ELECT DEVICES SYST | 62326 | 0% | 47% | 8 |
| 2 | MICROWAVE IC | 45845 | 0% | 46% | 6 |
| 3 | E DE CASTRO ADV ELECT SYST | 37247 | 0% | 38% | 6 |
| 4 | ADV MICROELECT AACHEN AMICA | 36234 | 0% | 24% | 9 |
| 5 | INTERDIPARTIMENTALE NANO MATES | 29801 | 0% | 60% | 3 |
| 6 | MANCHESTER MESOSCI NANOTECHNOL | 23979 | 1% | 14% | 10 |
| 7 | N S ETSF | 22075 | 0% | 67% | 2 |
| 8 | V LASHKARIOV SEMICOND PHYS | 21779 | 0% | 26% | 5 |
| 9 | ASHTIAN BRANCH | 19218 | 0% | 19% | 6 |
| 10 | ADV MAT 2F | 16558 | 0% | 100% | 1 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | NANO LETTERS | 12941 | 5% | 1% | 98 |
| 2 | APPLIED PHYSICS LETTERS | 11186 | 15% | 0% | 275 |
| 3 | PHYSICAL REVIEW B | 7858 | 15% | 0% | 285 |
| 4 | ACS NANO | 7459 | 4% | 1% | 65 |
| 5 | IEEE ELECTRON DEVICE LETTERS | 6315 | 3% | 1% | 59 |
| 6 | 2D MATERIALS | 4554 | 1% | 3% | 10 |
| 7 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 3094 | 3% | 0% | 54 |
| 8 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2061 | 1% | 1% | 15 |
| 9 | NATURE NANOTECHNOLOGY | 1803 | 1% | 1% | 12 |
| 10 | PHYSICAL REVIEW LETTERS | 1574 | 5% | 0% | 99 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | HWANG, EH , ROSSI, E , DAS SARMA, S , ADAM, S , (2011) ELECTRONIC TRANSPORT IN TWO-DIMENSIONAL GRAPHENE.REVIEWS OF MODERN PHYSICS. VOL. 83. ISSUE 2. P. 407 -470 | 112 | 26% | 1187 |
| 2 | SONG, SM , CHO, BJ , (2013) CONTACT RESISTANCE IN GRAPHENE CHANNEL TRANSISTORS.CARBON LETTERS. VOL. 14. ISSUE 3. P. 162 -170 | 51 | 76% | 6 |
| 3 | MUCCIOLO, ER , LEWENKOPF, CH , (2010) DISORDER AND ELECTRONIC TRANSPORT IN GRAPHENE.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 22. ISSUE 27. P. - | 59 | 55% | 90 |
| 4 | SCHWIERZ, F , (2013) GRAPHENE TRANSISTORS: STATUS, PROSPECTS, AND PROBLEMS.PROCEEDINGS OF THE IEEE. VOL. 101. ISSUE 7. P. 1567 -1584 | 49 | 46% | 117 |
| 5 | HWANG, EH , KECHEDZHI, K , DAS SARMA, S , (2012) GATE-TUNABLE QUANTUM TRANSPORT IN DOUBLE-LAYER GRAPHENE.PHYSICAL REVIEW B. VOL. 86. ISSUE 16. P. - | 52 | 68% | 8 |
| 6 | PERES, NMR , (2010) COLLOQUIUM: THE TRANSPORT PROPERTIES OF GRAPHENE: AN INTRODUCTION.REVIEWS OF MODERN PHYSICS. VOL. 82. ISSUE 3. P. 2673 -2700 | 62 | 30% | 441 |
| 7 | DAS SARMA, S , HWANG, EH , LI, QZ , (2012) DISORDER BY ORDER IN GRAPHENE.PHYSICAL REVIEW B. VOL. 85. ISSUE 19. P. - | 39 | 83% | 9 |
| 8 | FREGONESE, S , MAGALLO, M , MANEUX, C , HAPPY, H , ZIMMER, T , (2013) SCALABLE ELECTRICAL COMPACT MODELING FOR GRAPHENE FET TRANSISTORS.IEEE TRANSACTIONS ON NANOTECHNOLOGY. VOL. 12. ISSUE 4. P. 539-546 | 25 | 96% | 25 |
| 9 | KARNATAK, P , SAI, TP , GOSWAMI, S , GHATAK, S , KAUSHAL, S , GHOSH, A , (2016) CURRENT CROWDING MEDIATED LARGE CONTACT NOISE IN GRAPHENE FIELD-EFFECT TRANSISTORS.NATURE COMMUNICATIONS. VOL. 7. ISSUE . P. - | 38 | 64% | 0 |
| 10 | ZHANG, ZJ , YANG, F , AGNIHOTRI, P , LEE, JU , LLOYD, JR , (2016) REVERSE DEGRADATION OF NICKEL GRAPHENE JUNCTION BY HYDROGEN ANNEALING.AIP ADVANCES. VOL. 6. ISSUE 2. P. - | 27 | 90% | 0 |
Classes with closest relation at Level 1 |