Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
37004 | 69 | 15.4 | 27% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
5 | 4 | CHEMISTRY, ORGANIC//CHEMISTRY, INORGANIC & NUCLEAR//CHEMISTRY, MULTIDISCIPLINARY | 1745167 |
247 | 3 | JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY//CHEMISTRY, PHYSICAL//ESIPT | 46741 |
3539 | 2 | TRIARYLMETHANE//PHOTO EMF//BAEYER CONDENSATION | 1367 |
37004 | 1 | KALIFOR//AU TIO2 GE MOS FILM//CONTACT CHARGINGS | 69 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | KALIFOR | address | 885092 | 3% | 100% | 2 |
2 | AU TIO2 GE MOS FILM | authKW | 442546 | 1% | 100% | 1 |
3 | CONTACT CHARGINGS | authKW | 442546 | 1% | 100% | 1 |
4 | INTEFACE PHOTOREACTION OF OXYGEN | authKW | 442546 | 1% | 100% | 1 |
5 | INTERFACIAL BOND DEFECT | authKW | 442546 | 1% | 100% | 1 |
6 | LATERAL ELECTRIC FIELD EFFECT | authKW | 442546 | 1% | 100% | 1 |
7 | PHOTOASSISTED DISSOCIATION REACTION | authKW | 442546 | 1% | 100% | 1 |
8 | SENSITIVITY TO UV LIGHT | authKW | 442546 | 1% | 100% | 1 |
9 | THIN OXIDE GROWTH | authKW | 442546 | 1% | 100% | 1 |
10 | TIO2 GE BILAYER FILM | authKW | 442546 | 1% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Imaging Science & Photographic Technology | 174 | 7% | 0% | 5 |
2 | Materials Science, Coatings & Films | 168 | 12% | 0% | 8 |
3 | Physics, Condensed Matter | 137 | 25% | 0% | 17 |
4 | Physics, Applied | 125 | 29% | 0% | 20 |
5 | Chemistry, Physical | 104 | 28% | 0% | 19 |
6 | Mathematics, Interdisciplinary Applications | 39 | 6% | 0% | 4 |
7 | Physics, Atomic, Molecular & Chemical | 36 | 10% | 0% | 7 |
8 | Physics, Multidisciplinary | 33 | 12% | 0% | 8 |
9 | Physics, Mathematical | 23 | 6% | 0% | 4 |
10 | Crystallography | 13 | 4% | 0% | 3 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | KALIFOR | 885092 | 3% | 100% | 2 |
2 | INFORMAT INFORMAT ENGN | 110635 | 1% | 25% | 1 |
3 | PHYS CHEM ELEKTROCHEM | 546 | 1% | 0% | 1 |
4 | HBEREICH PHYS | 41 | 1% | 0% | 1 |
5 | PHYS SCI | 24 | 1% | 0% | 1 |
6 | EDUC | 22 | 3% | 0% | 2 |
7 | CHEM BIOCHEM | 3 | 1% | 0% | 1 |
8 | CHEM | 3 | 7% | 0% | 5 |
9 | ENGN | 2 | 3% | 0% | 2 |
10 | BIOCHEM | 1 | 1% | 0% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF PHOTOGRAPHIC SCIENCE | 12773 | 6% | 1% | 4 |
2 | APPLICATIONS OF SURFACE SCIENCE | 3420 | 3% | 0% | 2 |
3 | PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 2101 | 3% | 0% | 2 |
4 | PHOTOGRAPHIC SCIENCE AND ENGINEERING | 2037 | 1% | 0% | 1 |
5 | INFRARED PHYSICS | 1715 | 3% | 0% | 2 |
6 | ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-WIESBADEN | 990 | 1% | 0% | 1 |
7 | BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 871 | 4% | 0% | 3 |
8 | JOURNAL DE PHYSIQUE | 416 | 4% | 0% | 3 |
9 | INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY | 355 | 4% | 0% | 3 |
10 | THEORETICA CHIMICA ACTA | 318 | 1% | 0% | 1 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | SUNADA, J , MATSUDA, S , NAGANO, T , KAMEYAMA, S , WADA, T , TATSUMOTO, H , (2002) ULTRAVIOLET PHOTOVOLTAIC EFFECT OF AU/TIO2/GE METAL OXIDE SEMICONDUCTOR STRUCTURE FILM.JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. VOL. 41. ISSUE 8A. P. L878-L880 | 6 | 86% | 0 |
2 | MATSUO, Y , OISHI, K , (1997) CORRECTION FOR THE C-V CURVE OF AU/GEO2/GE MOS STRUCTURE.PHYSICS OF LOW-DIMENSIONAL STRUCTURES. VOL. 7. ISSUE . P. 35-48 | 5 | 100% | 1 |
3 | OISHI, K , MATSUO, Y , (1997) THE PHOTO C-V CHARACTERISTICS OF THE AU/GEO2/GE MOS CAPACITOR.PHYSICS OF LOW-DIMENSIONAL STRUCTURES. VOL. 8-9. ISSUE . P. 73-80 | 5 | 100% | 0 |
4 | YIANOULIS, P , (1993) DISTRIBUTION OF IONIZATION ENERGIES OF TCC AND TDC MOLECULAR-SURFACES.MOLECULAR CRYSTALS AND LIQUID CRYSTALS. VOL. 228. ISSUE . P. 671 -676 | 6 | 86% | 0 |
5 | MATSUDA, S , IMAMURA, T , SUNADA, J , TATSUMOTO, H , (2001) ULTRAVIOLET PHOTOCONDUCTION OF TIO2/GE BILAYER FILM.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 40. ISSUE 4A. P. 2205-2210 | 5 | 63% | 0 |
6 | OISHI, K , FUKUCHI, K , SUZUKI, T , SUNADA, J , (1991) MECHANISM OF PHOTOCONDUCTION ON SURFACE-OXIDIZED GE FILMS.APPLIED SURFACE SCIENCE. VOL. 48-9. ISSUE . P. 276-280 | 5 | 83% | 0 |
7 | MATSUO, Y , OISHI, K , (1996) OXIDE THICKNESS DEPENDENCE OF PHOTOCURRENT FOR THE GEO2/GE FILM SYSTEM.APPLIED SURFACE SCIENCE. VOL. 100. ISSUE . P. 248 -251 | 4 | 80% | 0 |
8 | OISHI, K , MATSUO, Y , (1996) INTERNAL PHOTOEMISSION AND PHOTOCONDUCTION ON GEO2/GE FILMS.THIN SOLID FILMS. VOL. 274. ISSUE 1-2. P. 133-137 | 3 | 100% | 10 |
9 | ERNST, L , (1989) THE SURFACE-VACANCY BONDED H2O MOLECULE ON AN ALKALI-HALIDE (100) CRYSTAL-FACE AND A MODEL OF THE STIMULATED CONTACT CHARGING IN THE ELECTROSTATIC POTASH SALT PROCESSING.BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS. VOL. 93. ISSUE 8. P. 857-863 | 6 | 67% | 6 |
10 | SUNADA, J , FUKUCHI, K , TANEDA, Y , HIROSE, M , (1995) THERMAL GROWTH OF THIN OXIDE IN GE FILMS AND INTERFACIAL BEAD DEFECTS OF OXYGEN.JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. VOL. 34. ISSUE 5A. P. L570-L572 | 4 | 67% | 2 |
Classes with closest relation at Level 1 |