Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
23351 | 349 | 26.0 | 65% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
48 | 3 | THERMOELECTRIC//QUANTUM DOTS//MATERIALS SCIENCE, MULTIDISCIPLINARY | 93648 |
629 | 2 | CUIN GASE 2//CUINSE2//CIGS | 13816 |
23351 | 1 | CUSBS2//PHOTOVOLTA MAT SEMICOND//CU3BIS3 | 349 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | CUSBS2 | authKW | 1521616 | 6% | 87% | 20 |
2 | PHOTOVOLTA MAT SEMICOND | address | 712030 | 7% | 35% | 23 |
3 | CU3BIS3 | authKW | 622172 | 2% | 89% | 8 |
4 | CHALCOSTIBITE | authKW | 393716 | 2% | 75% | 6 |
5 | SN2SB2S5 | authKW | 349973 | 1% | 100% | 4 |
6 | AG3SBS3 | authKW | 279977 | 1% | 80% | 4 |
7 | COPPER ANTIMONY SULFIDE | authKW | 279977 | 1% | 80% | 4 |
8 | AGBIS2 | authKW | 262480 | 1% | 100% | 3 |
9 | CUBIS2 | authKW | 262480 | 1% | 100% | 3 |
10 | PREPARATOIRE ETUD INGN TUNIS MONTFLEURY | address | 262480 | 1% | 100% | 3 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Materials Science, Multidisciplinary | 2691 | 60% | 0% | 211 |
2 | Physics, Applied | 1392 | 41% | 0% | 144 |
3 | Physics, Condensed Matter | 422 | 20% | 0% | 69 |
4 | Materials Science, Coatings & Films | 362 | 8% | 0% | 27 |
5 | Chemistry, Physical | 205 | 19% | 0% | 65 |
6 | Nanoscience & Nanotechnology | 169 | 8% | 0% | 29 |
7 | Crystallography | 156 | 6% | 0% | 22 |
8 | Energy & Fuels | 91 | 6% | 0% | 21 |
9 | Metallurgy & Metallurgical Engineering | 48 | 5% | 0% | 17 |
10 | Chemistry, Inorganic & Nuclear | 29 | 4% | 0% | 15 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | PHOTOVOLTA MAT SEMICOND | 712030 | 7% | 35% | 23 |
2 | PREPARATOIRE ETUD INGN TUNIS MONTFLEURY | 262480 | 1% | 100% | 3 |
3 | IPEITUNIS MONTFLEURY | 196858 | 1% | 75% | 3 |
4 | IPEI TUNIS MONTFLEURY | 174986 | 1% | 100% | 2 |
5 | UNIV TUNIS EL MANAR | 174986 | 1% | 100% | 2 |
6 | PREPARATOIRE ETUD INGENIEURS TUNIS MONTFLEUR | 116656 | 1% | 67% | 2 |
7 | ENIT IPEITUNIS MONTFLEURY | 87493 | 0% | 100% | 1 |
8 | ICUBE SCI INGENIEUR INFORMAT IMAGE | 87493 | 0% | 100% | 1 |
9 | IPEITUNISMONTFLEURY | 87493 | 0% | 100% | 1 |
10 | LPMS ENIT | 87493 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | CHALCOGENIDE LETTERS | 28378 | 4% | 2% | 15 |
2 | JOURNAL OF OVONIC RESEARCH | 1430 | 1% | 1% | 2 |
3 | PHYSICS AND CHEMISTRY OF LIQUIDS | 1187 | 1% | 0% | 5 |
4 | MATERIALS LETTERS | 1104 | 5% | 0% | 17 |
5 | ACTA METALLURGICA SINICA-ENGLISH LETTERS | 949 | 1% | 0% | 3 |
6 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 947 | 2% | 0% | 6 |
7 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 838 | 3% | 0% | 9 |
8 | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 798 | 2% | 0% | 7 |
9 | MATERIALS CHEMISTRY AND PHYSICS | 781 | 3% | 0% | 11 |
10 | THIN SOLID FILMS | 758 | 5% | 0% | 18 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | CUSBS2 | 1521616 | 6% | 87% | 20 | Search CUSBS2 | Search CUSBS2 |
2 | CU3BIS3 | 622172 | 2% | 89% | 8 | Search CU3BIS3 | Search CU3BIS3 |
3 | CHALCOSTIBITE | 393716 | 2% | 75% | 6 | Search CHALCOSTIBITE | Search CHALCOSTIBITE |
4 | SN2SB2S5 | 349973 | 1% | 100% | 4 | Search SN2SB2S5 | Search SN2SB2S5 |
5 | AG3SBS3 | 279977 | 1% | 80% | 4 | Search AG3SBS3 | Search AG3SBS3 |
6 | COPPER ANTIMONY SULFIDE | 279977 | 1% | 80% | 4 | Search COPPER+ANTIMONY+SULFIDE | Search COPPER+ANTIMONY+SULFIDE |
7 | AGBIS2 | 262480 | 1% | 100% | 3 | Search AGBIS2 | Search AGBIS2 |
8 | CUBIS2 | 262480 | 1% | 100% | 3 | Search CUBIS2 | Search CUBIS2 |
9 | COPPER ANTIMONY SELENIDE | 196858 | 1% | 75% | 3 | Search COPPER+ANTIMONY+SELENIDE | Search COPPER+ANTIMONY+SELENIDE |
10 | CU3SBS3 | 196858 | 1% | 75% | 3 | Search CU3SBS3 | Search CU3SBS3 |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | SURIAKARTHICK, R , KUMAR, VN , SHYJU, TS , GOPALAKRISHNAN, R , (2015) EFFECT OF SUBSTRATE TEMPERATURE ON COPPER ANTIMONY SULPHIDE THIN FILMS FROM THERMAL EVAPORATION.JOURNAL OF ALLOYS AND COMPOUNDS. VOL. 651. ISSUE . P. 423 -433 | 24 | 86% | 3 |
2 | MACIAS, C , LUGO, S , BENITEZ, A , LOPEZ, I , KHARISSOV, B , VAZQUEZ, A , PENA, Y , (2017) THIN FILM SOLAR CELL BASED ON CUSBS2 ABSORBER PREPARED BY CHEMICAL BATH DEPOSITION (CBD).MATERIALS RESEARCH BULLETIN. VOL. 87. ISSUE . P. 161 -166 | 25 | 78% | 0 |
3 | SHAARI, A , SHAMSURI, WNW , KHENATA, R , PRAKASH, D , VERMA, KD , HUSSAIN, A , AHMED, R , ALI, N , BUTT, FK , (2016) POST ANNEALING EFFECTS ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF CUSBS2 THIN FILMS FABRICATED BY COMBINATORIAL THERMAL EVAPORATION TECHNIQUE.SUPERLATTICES AND MICROSTRUCTURES. VOL. 89. ISSUE . P. 136 -144 | 24 | 65% | 1 |
4 | LIU, S , WANG, XB , NIE, LY , CHEN, LJ , YUAN, R , (2015) SPRAY PYROLYSIS DEPOSITION OF CU3BIS3 THIN FILMS.THIN SOLID FILMS. VOL. 585. ISSUE . P. 72 -75 | 19 | 73% | 5 |
5 | LIU, S , CHEN, L , NIE, L , WANG, X , YUAN, R , (2014) THE INFLUENCE OF SUBTRATE TEMPERATURE ON SPRAY-DEPOSITED CUSBS2 THIN FILMS.CHALCOGENIDE LETTERS. VOL. 11. ISSUE 12. P. 639 -644 | 15 | 88% | 0 |
6 | WAN, L , MA, C , HU, K , ZHOU, R , MAO, XL , PAN, SH , WONG, LH , XU, JZ , (2016) TWO-STAGE CO-EVAPORATED CUSBS2 THIN FILMS FOR SOLAR CELLS.JOURNAL OF ALLOYS AND COMPOUNDS. VOL. 680. ISSUE . P. 182 -190 | 15 | 68% | 3 |
7 | TLIG, F , GANNOUNI, M , BEN ASSAKER, I , CHTOUROU, R , (2017) NEW INVESTIGATION ON THE PHYSICAL AND ELECTROCHEMICAL PROPERTIES OF (TAS) THIN FILMS GROWN BY ELECTRODEPOSITION TECHNIQUE.JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY. VOL. 335. ISSUE . P. 26 -35 | 21 | 54% | 0 |
8 | WUBET, W , KUO, DH , (2014) PROCESS LIMITATION FOR P-TYPE CUSBS2 SEMICONDUCTOR WITH HIGH ELECTRICAL MOBILITY OF 20 CM(2) V(-1)S(-1).MATERIALS RESEARCH BULLETIN. VOL. 53. ISSUE . P. 290-294 | 10 | 100% | 7 |
9 | CHEN, C , QIU, XD , JI, SL , JIA, C , YE, CH , (2013) THE SYNTHESIS OF MONODISPERSED AGBIS2 QUANTUM DOTS WITH A GIANT DIELECTRIC CONSTANT.CRYSTENGCOMM. VOL. 15. ISSUE 38. P. 7644-7648 | 16 | 64% | 4 |
10 | BEN RABEH, M , KHEDMI, N , KANZARI, M , (2015) VACUUM ANNEALING EFFECTS ON THE STRUCTURAL AND OPTICAL PROPERTIES OF SNSB2S4 THIN FILMS FABRICATED BY THERMAL EVAPORATION TECHNIQUE.OPTIK. VOL. 126. ISSUE 21. P. 3104 -3109 | 17 | 57% | 1 |
Classes with closest relation at Level 1 |
Rank | Class id | link |
---|---|---|
1 | 8280 | BISMUTH SULFIDE//BI2S3//SB2S3 |
2 | 30576 | AG3ASS3//AG3PB2SB3S8//ANALYT CHEM FOOD FOOD SCI |
3 | 1729 | CU2ZNSNS4//KESTERITE//CZTS |
4 | 6163 | SULFOSALT//CANADIAN MINERALOGIST//LENGENBACH |
5 | 5842 | AGSBTE2//PBTE//LEAD TELLURIDE |
6 | 4449 | CUINS2//CUINS2 THIN FILMS//AGINS2 |
7 | 29997 | CUFES2//PHOTORECHARGEABLE BATTERY//ISOCUBANITE |
8 | 7008 | TIN SULFIDE//SNS2//SNS |
9 | 30694 | ENTHALPY ENTROPY RELATIONSHIP//AQUATION RATE//CDS AND CDSES PHOTO CONDUCTING DEVICES |
10 | 8224 | COPPER SULFIDE//CUS//CU2S |