Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
1738 | 2512 | 26.4 | 82% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
12 | 3 | DIAMOND AND RELATED MATERIALS//GRAPHENE//CARBON NANOTUBES | 130454 |
24 | 2 | CARBON NANOTUBES//SINGLE WALLED CARBON NANOTUBES//FIELD EMISSION | 35732 |
1738 | 1 | CNTFET//CARBON NANOTUBE FIELD EFFECT TRANSISTOR//CARBON NANOTUBE CNT | 2512 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | CNTFET | authKW | 464574 | 2% | 66% | 58 |
2 | CARBON NANOTUBE FIELD EFFECT TRANSISTOR | authKW | 191051 | 1% | 60% | 26 |
3 | CARBON NANOTUBE CNT | authKW | 167453 | 3% | 19% | 72 |
4 | CARBON NANOTUBE TRANSISTORS | authKW | 160858 | 1% | 88% | 15 |
5 | CARBON NANOTUBE FIELD EFFECT TRANSISTOR CNFET | authKW | 141520 | 1% | 61% | 19 |
6 | CARBON NANOTUBES | authKW | 140864 | 20% | 2% | 504 |
7 | CNFET | authKW | 135084 | 1% | 65% | 17 |
8 | NANOINTERCONNECT | authKW | 102944 | 0% | 71% | 12 |
9 | CARBON NANOTUBE FIELD EFFECT TRANSISTORS CNTFETS | authKW | 89494 | 0% | 82% | 9 |
10 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | journal | 88425 | 5% | 6% | 114 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 19570 | 56% | 0% | 1413 |
2 | Nanoscience & Nanotechnology | 18819 | 29% | 0% | 741 |
3 | Physics, Condensed Matter | 4622 | 24% | 0% | 598 |
4 | Materials Science, Multidisciplinary | 4597 | 32% | 0% | 793 |
5 | Engineering, Electrical & Electronic | 3102 | 22% | 0% | 561 |
6 | Physics, Multidisciplinary | 861 | 10% | 0% | 253 |
7 | Chemistry, Physical | 417 | 12% | 0% | 293 |
8 | Chemistry, Multidisciplinary | 302 | 10% | 0% | 254 |
9 | Computer Science, Hardware & Architecture | 69 | 1% | 0% | 31 |
10 | Optics | 3 | 2% | 0% | 52 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ADV DEVICE | 81630 | 1% | 22% | 31 |
2 | SPSMSGT | 64816 | 0% | 67% | 8 |
3 | ELECT MOLSERV PHYS ETAT CONDENSEURA 2464 | 36462 | 0% | 100% | 3 |
4 | PHYS CHEM NANODEVICES | 30494 | 2% | 6% | 43 |
5 | CHAIR ELE ON DEVICES INTEGRATED CIRCUITS | 25315 | 0% | 42% | 5 |
6 | DIHSLMNO | 24308 | 0% | 100% | 2 |
7 | INTERDIPARTIMENTALE RIC NANOMATES | 24308 | 0% | 100% | 2 |
8 | NANO OPTOELECT NOPL | 24308 | 0% | 100% | 2 |
9 | UMR5147 | 24308 | 0% | 100% | 2 |
10 | ELECT FDN GRP | 21875 | 0% | 60% | 3 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 88425 | 5% | 6% | 114 |
2 | JOURNAL OF COMPUTATIONAL ELECTRONICS | 14194 | 1% | 3% | 35 |
3 | APPLIED PHYSICS LETTERS | 11529 | 13% | 0% | 327 |
4 | NANO LETTERS | 10447 | 4% | 1% | 103 |
5 | NANOTECHNOLOGY | 9758 | 4% | 1% | 97 |
6 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 6066 | 4% | 1% | 88 |
7 | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 3617 | 2% | 1% | 50 |
8 | JAPANESE JOURNAL OF APPLIED PHYSICS | 3341 | 3% | 0% | 67 |
9 | IEEE ELECTRON DEVICE LETTERS | 2199 | 2% | 0% | 41 |
10 | MICRO & NANO LETTERS | 2160 | 1% | 1% | 17 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | CHEN, ZH , PEREBEINOS, V , AVOURIS, P , (2007) CARBON-BASED ELECTRONICS.NATURE NANOTECHNOLOGY. VOL. 2. ISSUE 10. P. 605 -615 | 47 | 56% | 1417 |
2 | SVENSSON, J , CAMPBELL, EEB , (2011) SCHOTTKY BARRIERS IN CARBON NANOTUBE-METAL CONTACTS.JOURNAL OF APPLIED PHYSICS. VOL. 110. ISSUE 11. P. - | 60 | 65% | 41 |
3 | LIU, W , HIEROLD, C , HALUSKA, M , (2014) ELECTRICAL CONTACTS TO INDIVIDUAL SWCNTS: A REVIEW.BEILSTEIN JOURNAL OF NANOTECHNOLOGY. VOL. 5. ISSUE . P. 2202 -2215 | 55 | 71% | 1 |
4 | ZHANG, ZY , WANG, S , PENG, LM , (2012) HIGH-PERFORMANCE DOPING-FREE CARBON-NANOTUBE-BASED CMOS DEVICES AND INTEGRATED CIRCUITS.CHINESE SCIENCE BULLETIN. VOL. 57. ISSUE 2-3. P. 135 -148 | 43 | 86% | 8 |
5 | MANEUX, C , FREGONESE, S , ZIMMER, T , RETAILLEAU, S , NGUYEN, HN , QUERLIOZ, D , BOURNEL, A , DOLLFUS, P , TRIOZON, F , NIQUET, YM , ET AL (2013) MULTISCALE SIMULATION OF CARBON NANOTUBE TRANSISTORS.SOLID-STATE ELECTRONICS. VOL. 89. ISSUE . P. 26 -67 | 59 | 60% | 4 |
6 | TULEVSKI, GS , FRANKLIN, AD , FRANK, D , LOBEZ, JM , CAO, Q , PARK, H , AFZALI, A , HAN, SJ , HANNON, JB , HAENSCH, W , (2014) TOWARD HIGH-PERFORMANCE DIGITAL LOGIC TECHNOLOGY WITH CARBON NANOTUBES.ACS NANO. VOL. 8. ISSUE 9. P. 8730 -8745 | 49 | 48% | 51 |
7 | NADERI, A , TAHNE, BA , (2016) REVIEW-METHODS IN IMPROVING THE PERFORMANCE OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. VOL. 5. ISSUE 12. P. M131 -M140 | 34 | 89% | 0 |
8 | PAYDAVOSI, N , UL ALAM, A , AHMED, S , HOLLAND, KD , REBSTOCK, JP , VAIDYANATHAN, M , (2011) RF PERFORMANCE POTENTIAL OF ARRAY-BASED CARBON-NANOTUBE TRANSISTORS-PART I: INTRINSIC RESULTS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 58. ISSUE 7. P. 1928 -1940 | 40 | 82% | 3 |
9 | JAVEY, A , GUO, J , WANG, Q , LUNDSTROM, M , DAI, HJ , (2003) BALLISTIC CARBON NANOTUBE FIELD-EFFECT TRANSISTORS.NATURE. VOL. 424. ISSUE 6949. P. 654-657 | 19 | 79% | 1901 |
10 | ZIENERT, A , SCHUSTER, J , GESSNER, T , (2014) METALLIC CARBON NANOTUBES WITH METAL CONTACTS: ELECTRONIC STRUCTURE AND TRANSPORT.NANOTECHNOLOGY. VOL. 25. ISSUE 42. P. - | 36 | 73% | 7 |
Classes with closest relation at Level 1 |