Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
87 | 77161 | 17.8 | 63% |
Classes in level above (level 4) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
5 | 1620399 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY |
Classes in level below (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | SEMICONDUCTOR LASERS | Author keyword | 982 | 45% | 2% | 1653 |
2 | IEEE JOURNAL OF QUANTUM ELECTRONICS | Journal | 755 | 28% | 3% | 2319 |
3 | JOURNAL OF CRYSTAL GROWTH | Journal | 718 | 15% | 6% | 4458 |
4 | ELECTRONICS LETTERS | Journal | 643 | 13% | 6% | 4738 |
5 | IEEE PHOTONICS TECHNOLOGY LETTERS | Journal | 477 | 17% | 3% | 2569 |
6 | SOLID-STATE ELECTRONICS | Journal | 361 | 19% | 2% | 1762 |
7 | IEEE TRANSACTIONS ON ELECTRON DEVICES | Journal | 357 | 15% | 3% | 2155 |
8 | QUANTUM WELL LASERS | Author keyword | 260 | 58% | 0% | 296 |
9 | GAAS | Author keyword | 259 | 25% | 1% | 909 |
10 | MOLECULAR BEAM EPITAXY | Author keyword | 253 | 21% | 1% | 1101 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SEMICONDUCTOR LASERS | 982 | 45% | 2% | 1653 | Search SEMICONDUCTOR+LASERS | Search SEMICONDUCTOR+LASERS |
2 | QUANTUM WELL LASERS | 260 | 58% | 0% | 296 | Search QUANTUM+WELL+LASERS | Search QUANTUM+WELL+LASERS |
3 | GAAS | 259 | 25% | 1% | 909 | Search GAAS | Search GAAS |
4 | MOLECULAR BEAM EPITAXY | 253 | 21% | 1% | 1101 | Search MOLECULAR+BEAM+EPITAXY | Search MOLECULAR+BEAM+EPITAXY |
5 | GALLIUM ARSENIDE | 246 | 29% | 1% | 720 | Search GALLIUM+ARSENIDE | Search GALLIUM+ARSENIDE |
6 | INGAAS | 227 | 39% | 1% | 455 | Search INGAAS | Search INGAAS |
7 | SEMICONDUCTING III V MATERIALS | 214 | 32% | 1% | 557 | Search SEMICONDUCTING+III+V+MATERIALS | Search SEMICONDUCTING+III+V+MATERIALS |
8 | SEMICONDUCTOR JUNCTION LASERS | 211 | 66% | 0% | 198 | Search SEMICONDUCTOR+JUNCTION+LASERS | Search SEMICONDUCTOR+JUNCTION+LASERS |
9 | INP | 189 | 32% | 1% | 499 | Search INP | Search INP |
10 | VERTICAL CAVITY SURFACE EMITTING LASERS | 178 | 53% | 0% | 233 | Search VERTICAL+CAVITY+SURFACE+EMITTING+LASERS | Search VERTICAL+CAVITY+SURFACE+EMITTING+LASERS |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | GAAS | 1832 | 25% | 8% | 6477 |
2 | MOLECULAR BEAM EPITAXY | 1213 | 23% | 6% | 4746 |
3 | SEMICONDUCTOR LASERS | 970 | 44% | 2% | 1697 |
4 | QUANTUM WELL LASERS | 915 | 61% | 1% | 981 |
5 | GAINNAS | 819 | 76% | 1% | 567 |
6 | INP | 813 | 36% | 2% | 1792 |
7 | HETEROJUNCTION BIPOLAR TRANSISTORS | 557 | 58% | 1% | 641 |
8 | GAINP | 423 | 81% | 0% | 255 |
9 | SURFACE EMITTING LASERS | 421 | 43% | 1% | 754 |
10 | GA05IN05P | 393 | 86% | 0% | 197 |
Journals |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | IEEE JOURNAL OF QUANTUM ELECTRONICS | 755 | 28% | 3% | 2319 |
2 | JOURNAL OF CRYSTAL GROWTH | 718 | 15% | 6% | 4458 |
3 | ELECTRONICS LETTERS | 643 | 13% | 6% | 4738 |
4 | IEEE PHOTONICS TECHNOLOGY LETTERS | 477 | 17% | 3% | 2569 |
5 | SOLID-STATE ELECTRONICS | 361 | 19% | 2% | 1762 |
6 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 357 | 15% | 3% | 2155 |
7 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 203 | 11% | 2% | 1756 |
8 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 194 | 15% | 2% | 1160 |
9 | IEEE ELECTRON DEVICE LETTERS | 192 | 15% | 2% | 1225 |
10 | IEE PROCEEDINGS-OPTOELECTRONICS | 160 | 39% | 0% | 323 |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Band parameters for III-V compound semiconductors and their alloys | 2001 | 2940 | 744 | 45% |
Nanometre-scale electronics with III-V compound semiconductors | 2011 | 304 | 50 | 72% |
Thirty Years of Luminescent Solar Concentrator Research: Solar Energy for the Built Environment | 2012 | 107 | 172 | 48% |
Recent advances of VCSEL photonics | 2006 | 152 | 79 | 82% |
Theory of electronic structure evolution in GaAsN and GaPN alloys | 2001 | 285 | 87 | 78% |
RESONANT-CAVITY ENHANCED PHOTONIC DEVICES | 1995 | 389 | 131 | 60% |
III-V multijunction solar cells for concentrating photovoltaics | 2009 | 109 | 16 | 81% |
High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes | 2004 | 177 | 64 | 72% |
Intermediate band solar cells: Recent progress and future directions | 2015 | 2 | 207 | 75% |
Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications | 2011 | 54 | 155 | 87% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ENERGIA SOLAR | 161 | 52% | 0.3% | 222 |
2 | REED PHOTON | 147 | 89% | 0.1% | 66 |
3 | HIGH TECHNOL MAT | 71 | 26% | 0.3% | 234 |
4 | FERDINAND BRAUN | 52 | 43% | 0.1% | 94 |
5 | SOLID STATE PHOTON | 48 | 39% | 0.1% | 98 |
6 | ZENTRUM NANOPHOTON | 45 | 90% | 0.0% | 19 |
7 | ULTRAHIGH FREQUENCY SEMICOND ELECT | 41 | 81% | 0.0% | 25 |
8 | TRANSMISS DEVICES RD S | 40 | 79% | 0.0% | 26 |
9 | MICROWAVE PHOTON TECHNOL | 38 | 70% | 0.0% | 32 |
10 | NTT PHOTON S | 37 | 21% | 0.2% | 156 |
Related classes at same level (level 3) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000003996 | SOVIET PHYSICS SEMICONDUCTORS-USSR//GETTERING//SILICON |
2 | 0.0000003671 | PHYSICAL REVIEW B//PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES//SUPERLATTICES AND MICROSTRUCTURES |
3 | 0.0000003316 | QUANTUM CASCADE LASERS//QUANTUM CASCADE LASER//QUANTUM CASCADE LASERS QCLS |
4 | 0.0000002992 | HGCDTE//CDTE//CDZNTE |
5 | 0.0000002987 | GAN//NITRIDES//GALLIUM NITRIDE |
6 | 0.0000001992 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
7 | 0.0000001920 | JOURNAL OF LIGHTWAVE TECHNOLOGY//OPTICS//IEEE PHOTONICS TECHNOLOGY LETTERS |
8 | 0.0000001777 | APPLIED OPTICS//LITHIUM NIOBATE//OPTICS COMMUNICATIONS |
9 | 0.0000001520 | IEEE JOURNAL OF SOLID-STATE CIRCUITS//IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES//IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS |
10 | 0.0000001397 | SILICON CARBIDE//4H SIC//SIC |