Class information for:
Level 3: SILICON CARBIDE//4H SIC//SIC

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
568 14954 17.7 56%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 4)


ID, lev.
above		 Publications Label for level above
5 1620399 PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY

Classes in level below (level 2)


ID, lev.
below		 Publications Label for level below
1001 9900 SILICON CARBIDE//4H SIC//SIC
1993 5054 NANOELECT GIGASCALE SYST//ELECTROSTATIC DISCHARGE ESD//SILICON CONTROLLED RECTIFIER SCR

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of publ.
in class
1 SILICON CARBIDE Author keyword 349 24% 8% 1266
2 4H SIC Author keyword 267 47% 3% 424
3 SIC Author keyword 162 19% 5% 750
4 SPECIFIC ON RESISTANCE Author keyword 111 76% 1% 77
5 NANOELECT GIGASCALE SYST Address 108 72% 1% 84
6 ELECTROSTATIC DISCHARGE ESD Author keyword 107 43% 1% 192
7 SILICON CARBIDE SIC Author keyword 107 44% 1% 184
8 6H SIC Author keyword 104 48% 1% 162
9 3C SIC Author keyword 91 40% 1% 176
10 PHYS MEASUREMENT TECHNOL Address 82 22% 2% 337

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of publ.
in class		 LCSH search Wikipedia search
1 SILICON CARBIDE 349 24% 8% 1266 Search SILICON+CARBIDE Search SILICON+CARBIDE
2 4H SIC 267 47% 3% 424 Search 4H+SIC Search 4H+SIC
3 SIC 162 19% 5% 750 Search SIC Search SIC
4 SPECIFIC ON RESISTANCE 111 76% 1% 77 Search SPECIFIC+ON+RESISTANCE Search SPECIFIC+ON+RESISTANCE
5 ELECTROSTATIC DISCHARGE ESD 107 43% 1% 192 Search ELECTROSTATIC+DISCHARGE+ESD Search ELECTROSTATIC+DISCHARGE+ESD
6 SILICON CARBIDE SIC 107 44% 1% 184 Search SILICON+CARBIDE+SIC Search SILICON+CARBIDE+SIC
7 6H SIC 104 48% 1% 162 Search 6H+SIC Search 6H+SIC
8 3C SIC 91 40% 1% 176 Search 3C+SIC Search 3C+SIC
9 SILICON CONTROLLED RECTIFIER SCR 77 72% 0% 61 Search SILICON+CONTROLLED+RECTIFIER+SCR Search SILICON+CONTROLLED+RECTIFIER+SCR
10 MICROPIPE 72 69% 0% 61 Search MICROPIPE Search MICROPIPE

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of publ.
in class
1 SILICON CARBIDE 545 26% 12% 1838
2 4 H 296 61% 2% 311
3 6H 229 70% 1% 188
4 6H SILICON CARBIDE 131 79% 1% 85
5 4H SILICON CARBIDE 125 71% 1% 101
6 BETA SIC100 SURFACE 116 83% 0% 65
7 SUBLIMATION GROWTH 116 62% 1% 120
8 ON RESISTANCE 106 73% 1% 82
9 SIC POLYTYPES 104 54% 1% 134
10 CHANNEL MOBILITY 88 65% 1% 83

Journals


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 MICROELECTRONICS RELIABILITY 69 11% 4% 611
2 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 12 11% 1% 103
3 ALCATEL TELECOMMUNICATIONS REVIEW 3 14% 0% 17

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review 1996 525 143 78%
Degradation of hexagonal silicon-carbide-based bipolar devices 2006 158 119 84%
3C-SiC Heteroepitaxial Growth on Silicon: The Quest for Holy Grail 2015 1 111 86%
Prospects for SiC electronics and sensors 2008 68 53 83%
Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications 2012 21 133 88%
Step-controlled epitaxial growth of SiC: high quality homoepitaxy 1997 277 97 92%
Deep level centers in silicon carbide: A review 1999 149 83 93%
Technological breakthroughs in growth control of silicon carbide for high power electronic devices 2004 60 64 100%
State of the art of high temperature power electronics 2011 37 12 58%
A CRITICAL-REVIEW OF OHMIC AND RECTIFYING CONTACTS FOR SILICON-CARBIDE 1995 265 68 72%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 NANOELECT GIGASCALE SYST 108 72% 0.6% 84
2 PHYS MEASUREMENT TECHNOL 82 22% 2.3% 337
3 ADV POWER DEVICE 81 96% 0.2% 25
4 ULTRA LOW LOSS POWER DEVICE TECHNOL BODY 57 95% 0.1% 19
5 POWER SEMICOND 42 72% 0.2% 33
6 MARINE ELECT 33 50% 0.3% 47
7 POWER SEMICOND GRP 27 78% 0.1% 18
8 ADV POWER DEVICES 27 92% 0.1% 11
9 FG NANOTECHNOL 27 71% 0.1% 22
10 UPR ULTRA LOW LOSS POWER DEVICE TECHNOL BODY 26 100% 0.1% 11

Related classes at same level (level 3)


Rank Relatedness score Related classes
1 0.0000003841 GAN//NITRIDES//GALLIUM NITRIDE
2 0.0000003167 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS
3 0.0000002801 SOVIET PHYSICS SEMICONDUCTORS-USSR//GETTERING//SILICON
4 0.0000002169 JOURNAL OF NUCLEAR MATERIALS//RADIOCHIMICA ACTA//URANIUM
5 0.0000002034 DIAMOND AND RELATED MATERIALS//DIAMOND//DIAMOND LIKE CARBON
6 0.0000001743 MATERIALS SCIENCE, CERAMICS//JOURNAL OF THE AMERICAN CERAMIC SOCIETY//JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
7 0.0000001615 IEEE TRANSACTIONS ON RELIABILITY//MICROELECTRONICS AND RELIABILITY//RELIABILITY ENGINEERING & SYSTEM SAFETY
8 0.0000001437 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS//SENSORS AND ACTUATORS A-PHYSICAL//JOURNAL OF MICROMECHANICS AND MICROENGINEERING
9 0.0000001397 SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//JOURNAL OF CRYSTAL GROWTH
10 0.0000001338 IEEE JOURNAL OF SOLID-STATE CIRCUITS//IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES//IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS