Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
470 | 21855 | 21.9 | 61% |
Classes in level above (level 4) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
5 | 1620399 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY |
Classes in level below (level 2) |
ID, lev. below |
Publications | Label for level below |
---|---|---|
1136 | 9147 | CHALCOGENIDE GLASSES//CHALCOGENIDE GLASS//CHALCOGENIDES |
1415 | 7520 | GE2SB2TE5//PHASE CHANGE MEMORY PCM//OPTICAL DISK |
1948 | 5188 | RESISTIVE SWITCHING//RESISTIVE RANDOM ACCESS MEMORY RRAM//MEMRISTOR |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | RESISTIVE SWITCHING | Author keyword | 811 | 79% | 2% | 522 |
2 | CHALCOGENIDE GLASSES | Author keyword | 728 | 68% | 3% | 646 |
3 | RESISTIVE RANDOM ACCESS MEMORY RRAM | Author keyword | 311 | 92% | 1% | 121 |
4 | CHALCOGENIDE GLASS | Author keyword | 283 | 58% | 1% | 327 |
5 | MEMRISTOR | Author keyword | 247 | 53% | 2% | 330 |
6 | GE2SB2TE5 | Author keyword | 202 | 85% | 0% | 107 |
7 | CHALCOGENIDES | Author keyword | 178 | 29% | 2% | 511 |
8 | RRAM | Author keyword | 176 | 61% | 1% | 185 |
9 | PHASE CHANGE MEMORY PCM | Author keyword | 133 | 80% | 0% | 83 |
10 | PHASE CHANGE MEMORY | Author keyword | 121 | 51% | 1% | 169 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | RESISTIVE SWITCHING | 811 | 79% | 2% | 522 | Search RESISTIVE+SWITCHING | Search RESISTIVE+SWITCHING |
2 | CHALCOGENIDE GLASSES | 728 | 68% | 3% | 646 | Search CHALCOGENIDE+GLASSES | Search CHALCOGENIDE+GLASSES |
3 | RESISTIVE RANDOM ACCESS MEMORY RRAM | 311 | 92% | 1% | 121 | Search RESISTIVE+RANDOM+ACCESS+MEMORY+RRAM | Search RESISTIVE+RANDOM+ACCESS+MEMORY+RRAM |
4 | CHALCOGENIDE GLASS | 283 | 58% | 1% | 327 | Search CHALCOGENIDE+GLASS | Search CHALCOGENIDE+GLASS |
5 | MEMRISTOR | 247 | 53% | 2% | 330 | Search MEMRISTOR | Search MEMRISTOR |
6 | GE2SB2TE5 | 202 | 85% | 0% | 107 | Search GE2SB2TE5 | Search GE2SB2TE5 |
7 | CHALCOGENIDES | 178 | 29% | 2% | 511 | Search CHALCOGENIDES | Search CHALCOGENIDES |
8 | RRAM | 176 | 61% | 1% | 185 | Search RRAM | Search RRAM |
9 | PHASE CHANGE MEMORY PCM | 133 | 80% | 0% | 83 | Search PHASE+CHANGE+MEMORY+PCM | Search PHASE+CHANGE+MEMORY+PCM |
10 | PHASE CHANGE MEMORY | 121 | 51% | 1% | 169 | Search PHASE+CHANGE+MEMORY | Search PHASE+CHANGE+MEMORY |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | CHALCOGENIDE GLASSES | 1796 | 71% | 7% | 1454 |
2 | GE2SB2TE5 | 556 | 87% | 1% | 271 |
3 | RRAM | 437 | 87% | 1% | 212 |
4 | NON VOLATILE MEMORY | 326 | 55% | 2% | 409 |
5 | CHANGE MEMORY | 279 | 90% | 1% | 120 |
6 | GE2SB2TE5 FILMS | 265 | 87% | 1% | 131 |
7 | PHOTOSTRUCTURAL CHANGES | 209 | 89% | 0% | 93 |
8 | AS2S3 | 201 | 68% | 1% | 175 |
9 | NON CRYSTALLINE SOLIDS | 184 | 70% | 1% | 154 |
10 | RESISTIVE SWITCHING MEMORIES | 173 | 72% | 1% | 136 |
Journals |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 64 | 11% | 3% | 550 |
2 | CHALCOGENIDE LETTERS | 23 | 19% | 1% | 110 |
3 | JOURNAL OF OVONIC RESEARCH | 9 | 20% | 0% | 39 |
4 | OPTICAL INFORMATION SYSTEMS | 5 | 21% | 0% | 19 |
5 | MINI-MICRO SYSTEMS | 4 | 24% | 0% | 15 |
6 | ADVANCED ELECTRONIC MATERIALS | 1 | 11% | 0% | 9 |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Memristive devices for computing | 2013 | 317 | 125 | 86% |
Nanoionics-based resistive switching memories | 2007 | 1806 | 54 | 65% |
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges | 2009 | 1369 | 115 | 58% |
Resistive switching in transition metal oxides | 2008 | 1007 | 35 | 80% |
Phase-change materials for rewriteable data storage | 2007 | 857 | 48 | 94% |
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance | 2014 | 51 | 384 | 91% |
Polymer-Based Resistive Memory Materials and Devices | 2014 | 47 | 139 | 94% |
Polymeric charge storage electrets for non-volatile organic field effect transistor memory devices | 2015 | 5 | 37 | 84% |
Chalcogenide photonics | 2011 | 276 | 89 | 58% |
Optical properties and applications of chalcogenide glasses: a review | 2003 | 494 | 57 | 75% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | JOINT SOLID STATE CHEM | 68 | 40% | 0.6% | 133 |
2 | INFRARED MAT DEVICES | 64 | 67% | 0.3% | 58 |
3 | OPT MEMORY ENGN | 58 | 83% | 0.2% | 33 |
4 | ITALIAN UNIV NANOELECT TEAM | 56 | 89% | 0.1% | 25 |
5 | OPT DISK SYST DEV | 55 | 77% | 0.2% | 37 |
6 | EQUIPE VER CERAM | 48 | 52% | 0.3% | 66 |
7 | VER CERAM | 45 | 36% | 0.5% | 102 |
8 | PL NEAR FIELD OPT | 44 | 67% | 0.2% | 39 |
9 | IBM MACRONIX PCRAM JOINT PROJECT | 41 | 100% | 0.1% | 15 |
10 | LVIV SCI MAT | 39 | 80% | 0.1% | 24 |
Related classes at same level (level 3) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000004165 | PHYSICS AND CHEMISTRY OF GLASSES//JOURNAL OF NON-CRYSTALLINE SOLIDS//GLASTECHNISCHE BERICHTE-GLASS SCIENCE AND TECHNOLOGY |
2 | 0.0000001910 | IEEE TRANSACTIONS ON MAGNETICS//JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS//PERPENDICULAR RECORDING |
3 | 0.0000001739 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
4 | 0.0000001694 | CUINSE2//CUINS2//CUIN GASE 2 |
5 | 0.0000001543 | Z SCAN//TWO PHOTON ABSORPTION//OPTICAL LIMITING |
6 | 0.0000001376 | OPTICS EXPRESS//PHOTONIC CRYSTAL//PHOTONIC CRYSTALS |
7 | 0.0000001313 | MACROMOLECULES//GLASS TRANSITION//JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS |
8 | 0.0000001274 | SKUTTERUDITE//FILLED SKUTTERUDITE//THERMOELECTRIC |
9 | 0.0000001248 | ORGANIC ELECTRONICS//ORGANIC SEMICONDUCTORS//POLYMER SOLAR CELLS |
10 | 0.0000001222 | THERMAL LENS SPECTROMETRY//THERMAL DIFFUSIVITY//PHOTOTHERMAL OPTOELECT DIAGNOST S |