Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
268 | 40112 | 21.1 | 78% |
Classes in level above (level 4) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
5 | 1620399 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY |
Classes in level below (level 2) |
ID, lev. below |
Publications | Label for level below |
---|---|---|
33 | 32935 | GAN//NITRIDES//GALLIUM NITRIDE |
2064 | 4833 | GAMNAS//GA MNAS//MNAS |
2877 | 2344 | ERBIUM//ERBIUM DOPED SILICON//ERBIUM IMPLANTATION |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | GAN | Author keyword | 3305 | 61% | 9% | 3552 |
2 | NITRIDES | Author keyword | 939 | 47% | 4% | 1496 |
3 | GALLIUM NITRIDE | Author keyword | 870 | 58% | 2% | 996 |
4 | MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | Journal | 832 | 86% | 1% | 427 |
5 | INGAN | Author keyword | 684 | 62% | 2% | 710 |
6 | GALLIUM COMPOUNDS | Author keyword | 522 | 50% | 2% | 756 |
7 | ALGAN | Author keyword | 517 | 61% | 1% | 544 |
8 | AKASAKI | Address | 364 | 98% | 0% | 94 |
9 | ALGAN GAN | Author keyword | 341 | 64% | 1% | 336 |
10 | INN | Author keyword | 315 | 69% | 1% | 271 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GAN | 3305 | 61% | 9% | 3552 | Search GAN | Search GAN |
2 | NITRIDES | 939 | 47% | 4% | 1496 | Search NITRIDES | Search NITRIDES |
3 | GALLIUM NITRIDE | 870 | 58% | 2% | 996 | Search GALLIUM+NITRIDE | Search GALLIUM+NITRIDE |
4 | INGAN | 684 | 62% | 2% | 710 | Search INGAN | Search INGAN |
5 | GALLIUM COMPOUNDS | 522 | 50% | 2% | 756 | Search GALLIUM+COMPOUNDS | Search GALLIUM+COMPOUNDS |
6 | ALGAN | 517 | 61% | 1% | 544 | Search ALGAN | Search ALGAN |
7 | ALGAN GAN | 341 | 64% | 1% | 336 | Search ALGAN+GAN | Search ALGAN+GAN |
8 | INN | 315 | 69% | 1% | 271 | Search INN | Search INN |
9 | HYDRIDE VAPOR PHASE EPITAXY | 307 | 79% | 0% | 195 | Search HYDRIDE+VAPOR+PHASE+EPITAXY | Search HYDRIDE+VAPOR+PHASE+EPITAXY |
10 | III V SEMICONDUCTORS | 296 | 31% | 2% | 806 | Search III+V+SEMICONDUCTORS | Search III+V+SEMICONDUCTORS |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | GAN | 4822 | 57% | 14% | 5777 |
2 | GALLIUM NITRIDE | 2527 | 71% | 5% | 2038 |
3 | ALN | 1228 | 55% | 4% | 1529 |
4 | VAPOR PHASE EPITAXY | 955 | 41% | 5% | 1831 |
5 | INN | 936 | 66% | 2% | 861 |
6 | MOLECULAR BEAM EPITAXY | 810 | 19% | 10% | 3925 |
7 | GA MNAS | 766 | 78% | 1% | 499 |
8 | SAPPHIRE | 756 | 34% | 5% | 1836 |
9 | GA1 XMNXAS | 742 | 87% | 1% | 361 |
10 | DOPED GAN | 696 | 80% | 1% | 439 |
Journals |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 832 | 86% | 1% | 427 |
2 | APPLIED PHYSICS EXPRESS | 84 | 16% | 1% | 489 |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Making nonmagnetic semiconductors ferromagnetic | 1998 | 3427 | 25 | 68% |
A ten-year perspective on dilute magnetic semiconductors and oxides | 2010 | 421 | 100 | 72% |
When group-III nitrides go infrared: New properties and perspectives | 2009 | 373 | 259 | 89% |
Advances in transparent glass-ceramic phosphors for white light-emitting diodes-A review | 2015 | 6 | 36 | 61% |
Theory of ferromagnetic (III,Mn)V semiconductors | 2006 | 684 | 280 | 78% |
First-principles calculations for defects and impurities: Applications to III-nitrides | 2004 | 1012 | 153 | 75% |
GaN based nanorods for solid state lighting | 2012 | 144 | 126 | 91% |
Band parameters for nitrogen-containing semiconductors | 2003 | 1372 | 362 | 61% |
Luminescence properties of defects in GaN | 2005 | 662 | 471 | 85% |
Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors | 2001 | 1096 | 62 | 68% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | AKASAKI | 364 | 98% | 0.2% | 94 |
2 | CRHEA | 237 | 59% | 0.7% | 269 |
3 | SEMICOND | 199 | 17% | 2.7% | 1094 |
4 | NITRIDE SEMICOND | 164 | 88% | 0.2% | 76 |
5 | LED BUSINESS | 138 | 96% | 0.1% | 44 |
6 | UCSB GRP | 130 | 97% | 0.1% | 36 |
7 | STATE ARTIFICIAL MICROSTRUCT MESOSCOP P | 128 | 45% | 0.5% | 215 |
8 | GAN DEVICE TECHNOL | 122 | 95% | 0.1% | 40 |
9 | NANODEVICE SYST | 116 | 74% | 0.2% | 87 |
10 | QUANTUM FUNCT SEMICOND | 113 | 41% | 0.5% | 215 |
Related classes at same level (level 3) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000003899 | ZNO//ZINC OXIDE//SNO2 |
2 | 0.0000003841 | SILICON CARBIDE//4H SIC//SIC |
3 | 0.0000002987 | SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//JOURNAL OF CRYSTAL GROWTH |
4 | 0.0000002284 | HGCDTE//CDTE//CDZNTE |
5 | 0.0000001849 | PHYSICAL REVIEW B//PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES//SUPERLATTICES AND MICROSTRUCTURES |
6 | 0.0000001604 | SOVIET PHYSICS SEMICONDUCTORS-USSR//GETTERING//SILICON |
7 | 0.0000001500 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
8 | 0.0000001448 | ULTRASONICS//IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL//MATERIALS EVALUATION |
9 | 0.0000001112 | POSITRON ANNIHILATION//POSITRONIUM//MAEAM |
10 | 0.0000001045 | QUANTUM CASCADE LASERS//QUANTUM CASCADE LASER//QUANTUM CASCADE LASERS QCLS |