Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
256 | 41787 | 19.1 | 49% |
Classes in level above (level 4) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
5 | 1620399 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY |
Classes in level below (level 2) |
ID, lev. below |
Publications | Label for level below |
---|---|---|
372 | 16511 | SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT |
913 | 10550 | EL2//NONIONIZING ENERGY LOSS NIEL//DX CENTERS |
1342 | 7876 | EDGE DEFINED FILM FED GROWTH//MULTICRYSTALLINE SILICON//PROGRESS IN PHOTOVOLTAICS |
3081 | 1887 | BELOW GAP EXCITATION//CURRENT DENSITY FILAMENT//GUNN EFFECT |
3103 | 1831 | MICROSYST IMICRO//MULTIPHONON RECOMBINATION//INFORMAT OPT TECHNOL |
3367 | 1217 | AC SURFACE PHOTOVOLTAGE//ELECTRON WORK FUNCTION//SUPERCONDUCTIVITY MECHANISM |
3535 | 979 | LATERAL PHOTOVOLTAGE//CEMOP//CONTINUOUS POSITION SENSITIVE DETECTOR |
3576 | 936 | SCI PROD ASSOC PHYS SUN//STARODUBTSEV PHYSICOTECH//SOLAR PHYS PROD CORP |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | Journal | 650 | 31% | 4% | 1766 |
2 | GETTERING | Author keyword | 240 | 68% | 1% | 212 |
3 | SILICON | Author keyword | 236 | 11% | 5% | 2088 |
4 | SEMICONDUCTORS | Journal | 145 | 15% | 2% | 919 |
5 | OXYGEN PRECIPITATION | Author keyword | 128 | 77% | 0% | 87 |
6 | CZOCHRALSKI SILICON | Author keyword | 123 | 72% | 0% | 97 |
7 | SWAMP | Address | 112 | 97% | 0% | 32 |
8 | MULTICRYSTALLINE SILICON | Author keyword | 109 | 54% | 0% | 140 |
9 | DLTS | Author keyword | 107 | 33% | 1% | 270 |
10 | EDGE DEFINED FILM FED GROWTH | Author keyword | 103 | 85% | 0% | 55 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GETTERING | 240 | 68% | 1% | 212 | Search GETTERING | Search GETTERING |
2 | SILICON | 236 | 11% | 5% | 2088 | Search SILICON | Search SILICON |
3 | OXYGEN PRECIPITATION | 128 | 77% | 0% | 87 | Search OXYGEN+PRECIPITATION | Search OXYGEN+PRECIPITATION |
4 | CZOCHRALSKI SILICON | 123 | 72% | 0% | 97 | Search CZOCHRALSKI+SILICON | Search CZOCHRALSKI+SILICON |
5 | MULTICRYSTALLINE SILICON | 109 | 54% | 0% | 140 | Search MULTICRYSTALLINE+SILICON | Search MULTICRYSTALLINE+SILICON |
6 | DLTS | 107 | 33% | 1% | 270 | Search DLTS | Search DLTS |
7 | EDGE DEFINED FILM FED GROWTH | 103 | 85% | 0% | 55 | Search EDGE+DEFINED+FILM+FED+GROWTH | Search EDGE+DEFINED+FILM+FED+GROWTH |
8 | GROWN IN DEFECT | 94 | 97% | 0% | 28 | Search GROWN+IN+DEFECT | Search GROWN+IN+DEFECT |
9 | TRANSIENT ENHANCED DIFFUSION | 87 | 70% | 0% | 73 | Search TRANSIENT+ENHANCED+DIFFUSION | Search TRANSIENT+ENHANCED+DIFFUSION |
10 | OXYGEN PRECIPITATE | 81 | 87% | 0% | 40 | Search OXYGEN+PRECIPITATE | Search OXYGEN+PRECIPITATE |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | CZOCHRALSKI SILICON | 518 | 72% | 1% | 403 |
2 | TRANSIENT ENHANCED DIFFUSION | 447 | 76% | 1% | 309 |
3 | DOPANT DIFFUSION | 444 | 76% | 1% | 311 |
4 | CRYSTALLINE SILICON | 384 | 39% | 2% | 776 |
5 | OXYGEN PRECIPITATION | 353 | 75% | 1% | 256 |
6 | SI | 282 | 10% | 6% | 2607 |
7 | IRRADIATED SILICON | 266 | 64% | 1% | 260 |
8 | MULTICRYSTALLINE SILICON | 245 | 56% | 1% | 298 |
9 | CZOCHRALSKI GROWN SILICON | 237 | 79% | 0% | 150 |
10 | SEMI INSULATING GAAS | 202 | 68% | 0% | 177 |
Journals |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 650 | 31% | 4% | 1766 |
2 | SEMICONDUCTORS | 145 | 15% | 2% | 919 |
3 | PROGRESS IN PHOTOVOLTAICS | 78 | 22% | 1% | 311 |
4 | SOLAR ENERGY MATERIALS AND SOLAR CELLS | 74 | 10% | 2% | 689 |
5 | IEEE JOURNAL OF PHOTOVOLTAICS | 73 | 28% | 1% | 221 |
6 | SOLID STATE PHENOMENA | 49 | 28% | 0% | 151 |
7 | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 28 | 10% | 1% | 261 |
8 | RADIATION EFFECTS LETTERS | 5 | 15% | 0% | 33 |
9 | DEFECT AND DIFFUSION FORUM/JOURNAL | 5 | 11% | 0% | 39 |
10 | SEMICONDUCTORS AND SEMIMETALS | 3 | 14% | 0% | 21 |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon | 1997 | 460 | 70 | 97% |
POINT-DEFECTS AND DOPANT DIFFUSION IN SILICON | 1989 | 946 | 130 | 78% |
Surface photovoltage phenomena: theory, experiment, and applications | 1999 | 841 | 437 | 42% |
Iron and its complexes in silicon | 1999 | 306 | 221 | 99% |
DEEP DONOR LEVELS (DX CENTERS) IN III-V SEMICONDUCTORS | 1990 | 548 | 104 | 86% |
Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells | 2012 | 107 | 167 | 54% |
Review of displacement damage effects in silicon devices | 2003 | 192 | 51 | 84% |
OXYGEN PRECIPITATION IN SILICON | 1995 | 348 | 194 | 93% |
Transient enhanced diffusion of boron in Si | 2002 | 167 | 83 | 93% |
Surface passivation of crystalline silicon solar cells: A review | 2000 | 207 | 23 | 87% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SWAMP | 112 | 97% | 0.1% | 32 |
2 | UNIV EXCELLENCE PHOTOVOLTA EDUC | 47 | 86% | 0.1% | 24 |
3 | ELECT MAT DEVICES NANOSTRUCT | 41 | 81% | 0.1% | 25 |
4 | SEH ISOBE RD | 38 | 93% | 0.0% | 14 |
5 | SUSTAINABLE ENERGY SYST | 37 | 36% | 0.2% | 82 |
6 | ION IMPLANTAT GRP | 35 | 86% | 0.0% | 18 |
7 | IMETEM | 35 | 39% | 0.2% | 71 |
8 | MAGNET SENSOR | 24 | 82% | 0.0% | 14 |
9 | MATIS | 20 | 26% | 0.2% | 67 |
10 | GREEN STRATEG ENERGY | 20 | 100% | 0.0% | 9 |
Related classes at same level (level 3) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000003996 | SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//JOURNAL OF CRYSTAL GROWTH |
2 | 0.0000003468 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
3 | 0.0000003173 | HGCDTE//CDTE//CDZNTE |
4 | 0.0000002801 | SILICON CARBIDE//4H SIC//SIC |
5 | 0.0000002007 | POSITRON ANNIHILATION//POSITRONIUM//MAEAM |
6 | 0.0000001610 | BENARD CONVECTION//BELOUSOV ZHABOTINSKY REACTION//SPIRAL WAVE |
7 | 0.0000001604 | GAN//NITRIDES//GALLIUM NITRIDE |
8 | 0.0000001529 | THERMAL LENS SPECTROMETRY//THERMAL DIFFUSIVITY//PHOTOTHERMAL OPTOELECT DIAGNOST S |
9 | 0.0000001451 | LASER INDUCED BREAKDOWN SPECTROSCOPY//LIBS//LASER INDUCED BREAKDOWN SPECTROSCOPY LIBS |
10 | 0.0000001314 | PHYSICAL REVIEW B//PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES//SUPERLATTICES AND MICROSTRUCTURES |