Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
913 | 10550 | 19.0 | 47% |
Classes in level above (level 3) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
256 | 41787 | SOVIET PHYSICS SEMICONDUCTORS-USSR//GETTERING//SILICON |
Classes in level below (level 1) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | EL2 | Author keyword | 27 | 59% | 0% | 30 |
2 | NONIONIZING ENERGY LOSS NIEL | Author keyword | 26 | 87% | 0% | 13 |
3 | DX CENTERS | Author keyword | 26 | 54% | 0% | 33 |
4 | MAGNET SENSOR | Address | 24 | 82% | 0% | 14 |
5 | DISPLACEMENT DAMAGE | Author keyword | 21 | 32% | 1% | 55 |
6 | DISPLACEMENT DAMAGE DOSE | Author keyword | 19 | 80% | 0% | 12 |
7 | NONIONIZING ENERGY LOSS | Author keyword | 19 | 76% | 0% | 13 |
8 | GRADED GAP ALXGA1 XAS STRUCTURES | Author keyword | 18 | 83% | 0% | 10 |
9 | INFORMAT MAITRISE SCI PHYS | Address | 18 | 89% | 0% | 8 |
10 | PINNED PHOTODIODE PPD | Author keyword | 18 | 89% | 0% | 8 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | EL2 | 27 | 59% | 0% | 30 | Search EL2 | Search EL2 |
2 | NONIONIZING ENERGY LOSS NIEL | 26 | 87% | 0% | 13 | Search NONIONIZING+ENERGY+LOSS+NIEL | Search NONIONIZING+ENERGY+LOSS+NIEL |
3 | DX CENTERS | 26 | 54% | 0% | 33 | Search DX+CENTERS | Search DX+CENTERS |
4 | DISPLACEMENT DAMAGE | 21 | 32% | 1% | 55 | Search DISPLACEMENT+DAMAGE | Search DISPLACEMENT+DAMAGE |
5 | DISPLACEMENT DAMAGE DOSE | 19 | 80% | 0% | 12 | Search DISPLACEMENT+DAMAGE+DOSE | Search DISPLACEMENT+DAMAGE+DOSE |
6 | NONIONIZING ENERGY LOSS | 19 | 76% | 0% | 13 | Search NONIONIZING+ENERGY+LOSS | Search NONIONIZING+ENERGY+LOSS |
7 | GRADED GAP ALXGA1 XAS STRUCTURES | 18 | 83% | 0% | 10 | Search GRADED+GAP+ALXGA1+XAS+STRUCTURES | Search GRADED+GAP+ALXGA1+XAS+STRUCTURES |
8 | PINNED PHOTODIODE PPD | 18 | 89% | 0% | 8 | Search PINNED+PHOTODIODE+PPD | Search PINNED+PHOTODIODE+PPD |
9 | MONOLITHIC ACTIVE PIXEL SENSOR MAPS | 17 | 100% | 0% | 8 | Search MONOLITHIC+ACTIVE+PIXEL+SENSOR+MAPS | Search MONOLITHIC+ACTIVE+PIXEL+SENSOR+MAPS |
10 | GAAS GE SOLAR CELLS | 13 | 80% | 0% | 8 | Search GAAS+GE+SOLAR+CELLS | Search GAAS+GE+SOLAR+CELLS |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SEMI INSULATING GAAS | 161 | 63% | 2% | 163 |
2 | ALXGA1 XAS ALLOYS | 145 | 67% | 1% | 131 |
3 | EL2 | 130 | 57% | 1% | 154 |
4 | DX CENTERS | 126 | 59% | 1% | 140 |
5 | SEMIINSULATING GAAS | 119 | 47% | 2% | 188 |
6 | ENCAPSULATED CZOCHRALSKI GAAS | 96 | 88% | 0% | 45 |
7 | DX CENTER | 95 | 63% | 1% | 96 |
8 | ARSENIC ANTISITE DEFECT | 94 | 77% | 1% | 64 |
9 | EL2 DEFECT | 75 | 76% | 1% | 53 |
10 | SI DOPED ALXGA1 XAS | 65 | 84% | 0% | 36 |
Journals |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ACTA ELECTRONICA | 1 | 11% | 0% | 6 |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
DEEP DONOR LEVELS (DX CENTERS) IN III-V SEMICONDUCTORS | 1990 | 548 | 104 | 86% |
Review of displacement damage effects in silicon devices | 2003 | 192 | 51 | 82% |
Exponential analysis in physical phenomena | 1999 | 257 | 153 | 33% |
PHOTOLUMINESCENCE OF ALXGA1-XAS ALLOYS | 1994 | 339 | 214 | 40% |
Positron annihilation spectroscopy of defects in semiconductors | 1998 | 70 | 78 | 51% |
NATIVE DEFECTS IN GALLIUM-ARSENIDE | 1988 | 215 | 160 | 92% |
Fe in III-V and II-VI semiconductors | 2008 | 43 | 84 | 60% |
A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide | 1999 | 69 | 99 | 48% |
IRRADIATION-INDUCED DEFECTS IN GAAS | 1985 | 329 | 34 | 91% |
Radiation effects on photonic imagers - A historical perspective | 2003 | 38 | 61 | 64% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | MAGNET SENSOR | 24 | 82% | 0.1% | 14 |
2 | INFORMAT MAITRISE SCI PHYS | 18 | 89% | 0.1% | 8 |
3 | SCI PROD STATE ENTERPRISE | 17 | 100% | 0.1% | 8 |
4 | TECHNOL GUYANE | 8 | 100% | 0.0% | 5 |
5 | SENDAI | 7 | 30% | 0.2% | 19 |
6 | GESEC RD | 6 | 71% | 0.0% | 5 |
7 | SCI STATE | 6 | 71% | 0.0% | 5 |
8 | IMAGE SENSOR TEAM | 4 | 67% | 0.0% | 4 |
9 | PROGRAM ELECT BEAM TECHNOL | 4 | 75% | 0.0% | 3 |
10 | UNIV ELE ON ACCELERATORS | 4 | 75% | 0.0% | 3 |
Related classes at same level (level 2) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000018991 | MICROSYST IMICRO//MULTIPHONON RECOMBINATION//INFORMAT OPT TECHNOL |
2 | 0.0000017475 | GAAS ON SI//GAAS SI//GAINP |
3 | 0.0000013963 | LT GAAS//ULTRAHIGH FREQUENCY SEMICOND ELECT//LOW TEMPERATURE GROWN GAAS |
4 | 0.0000013408 | SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT |
5 | 0.0000012477 | SCI PROD ASSOC PHYS SUN//STARODUBTSEV PHYSICOTECH//SOLAR PHYS PROD CORP |
6 | 0.0000009140 | EDGE DEFINED FILM FED GROWTH//MULTICRYSTALLINE SILICON//PROGRESS IN PHOTOVOLTAICS |
7 | 0.0000008495 | ENERGIA SOLAR//LUMINESCENT SOLAR CONCENTRATORS//INTERMEDIATE BAND |
8 | 0.0000008266 | GALLIUM ARSENIDE//SULFUR PASSIVATION//INDIUM ARSENIDE |
9 | 0.0000007863 | CDTE//CDZNTE//ZNSE |
10 | 0.0000007308 | GAINNAS//DILUTE NITRIDES//ANTIMONIDES |