Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
769 | 11658 | 21.8 | 71% |
Classes in level above (level 3) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
15 | 127408 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
Classes in level below (level 1) |
ID, lev. below | Publications | Label for level below |
---|---|---|
1648 | 2474 | GE ISLANDS//SIGE ISLANDS//HUT CLUSTERS |
1799 | 2411 | STRAINED SI//SIGE//STRAINED SILICON |
6311 | 1435 | ATOMIC LAYER DOPING//SI EPITAXIAL GROWTH//GERMANIUM SILICON COMPOUNDS |
7876 | 1241 | GESN//L NESS//GERMANIUM TIN |
9232 | 1106 | NI GERMANIDE//MBE//GERMANIUM GE |
9764 | 1057 | STRAINED SI1 XGEX SI QUANTUM WELLS//SI SIGE SUPERLATTICE//STRAINED SIGE SI |
13539 | 765 | SI1 YCY//SI1 X YGEXCY//SICGE |
16384 | 592 | CERAM PHYS//RIN//CONCENTRATED STRESS |
16662 | 577 | LATERAL CRYSTALLINE GROWTH//ACCELERATORS//ION INDUCED DEFECTS |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | SIGE | Author keyword | 147 | 28% | 4% | 454 |
2 | GERMANIUM | Author keyword | 123 | 17% | 6% | 645 |
3 | STRAINED SI | Author keyword | 105 | 52% | 1% | 144 |
4 | L NESS | Address | 69 | 44% | 1% | 121 |
5 | SILICON NANOSCI | Address | 60 | 64% | 1% | 59 |
6 | STRAINED SILICON | Author keyword | 54 | 43% | 1% | 98 |
7 | VIRTUAL SUBSTRATE | Author keyword | 44 | 73% | 0% | 33 |
8 | STRAINED GE | Author keyword | 41 | 90% | 0% | 18 |
9 | UHV CVD | Author keyword | 38 | 62% | 0% | 40 |
10 | SIGE ON INSULATOR | Author keyword | 37 | 81% | 0% | 22 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SIGE | 147 | 28% | 4% | 454 | Search SIGE | Search SIGE |
2 | GERMANIUM | 123 | 17% | 6% | 645 | Search GERMANIUM | Search GERMANIUM |
3 | STRAINED SI | 105 | 52% | 1% | 144 | Search STRAINED+SI | Search STRAINED+SI |
4 | STRAINED SILICON | 54 | 43% | 1% | 98 | Search STRAINED+SILICON | Search STRAINED+SILICON |
5 | VIRTUAL SUBSTRATE | 44 | 73% | 0% | 33 | Search VIRTUAL+SUBSTRATE | Search VIRTUAL+SUBSTRATE |
6 | STRAINED GE | 41 | 90% | 0% | 18 | Search STRAINED+GE | Search STRAINED+GE |
7 | UHV CVD | 38 | 62% | 0% | 40 | Search UHV+CVD | Search UHV+CVD |
8 | SIGE ON INSULATOR | 37 | 81% | 0% | 22 | Search SIGE+ON+INSULATOR | Search SIGE+ON+INSULATOR |
9 | GE | 37 | 23% | 1% | 144 | Search GE | Search GE |
10 | GE ISLANDS | 35 | 73% | 0% | 27 | Search GE+ISLANDS | Search GE+ISLANDS |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SI001 | 276 | 26% | 8% | 919 |
2 | GE | 244 | 19% | 10% | 1185 |
3 | GE ISLANDS | 235 | 70% | 2% | 197 |
4 | THREADING DISLOCATION DENSITIES | 143 | 67% | 1% | 128 |
5 | SI1 X YGEXCY | 124 | 81% | 1% | 74 |
6 | SI1 XGEX | 121 | 43% | 2% | 219 |
7 | GE SI100 ISLANDS | 114 | 88% | 0% | 53 |
8 | SI SIGE HETEROSTRUCTURES | 110 | 73% | 1% | 84 |
9 | SI100 | 101 | 15% | 5% | 606 |
10 | STRAINED SI | 99 | 52% | 1% | 134 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
High-performance Ge-on-Si photodetectors | 2010 | 285 | 53 | 83% |
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors | 2005 | 443 | 104 | 84% |
Academic and industry research progress in germanium nanodevices | 2011 | 109 | 24 | 88% |
High-k/Ge MOSFETs for future nanoelectronics | 2008 | 217 | 62 | 60% |
Band structure, deformation potentals, and carrier mobility in strained Si, Ge, and SiGe alloys | 1996 | 785 | 57 | 65% |
Growth and self-organization of SiGe nanostructures | 2013 | 45 | 451 | 69% |
High-mobility Si and Ge structures | 1997 | 524 | 105 | 67% |
Structural properties of self-organized semiconductor nanostructures | 2004 | 513 | 398 | 40% |
Ge-Photodetectors for Si-Based Optoelectronic Integration | 2011 | 51 | 49 | 88% |
Self-organization of nanostructures in semiconductor heteroepitaxy | 2002 | 310 | 217 | 41% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | L NESS | 69 | 44% | 1.0% | 121 |
2 | SILICON NANOSCI | 60 | 64% | 0.5% | 59 |
3 | CERAM PHYS | 36 | 37% | 0.7% | 76 |
4 | ADV S | 29 | 35% | 0.6% | 66 |
5 | CRYSTAL SCI TECHNOL | 24 | 34% | 0.5% | 57 |
6 | MBE | 19 | 37% | 0.4% | 41 |
7 | HALBLEITERTECH | 15 | 19% | 0.6% | 71 |
8 | SEMICOND PHOTON | 14 | 29% | 0.4% | 41 |
9 | HALBLEITERPHYS | 14 | 22% | 0.5% | 54 |
10 | ELECT TELECOMMUN PLICAT | 12 | 86% | 0.1% | 6 |
Related classes at same level (level 2) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000022448 | SCANNING TUNNELING MICROSCOPY//ATOM WI LAYERS//VICINAL SINGLE CRYSTAL SURFACES |
2 | 0.0000015494 | QUANTUM DOTS//QUANTUM DOT//INAS QUANTUM DOTS |
3 | 0.0000012827 | PHOTORESIST REMOVAL//WET OZONE//HYDROGEN TERMINATION |
4 | 0.0000011891 | GAAS ON SI//GAAS SI//GAINP |
5 | 0.0000010818 | HFO2//HIGH K//HIGH K DIELECTRICS |
6 | 0.0000010534 | SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT |
7 | 0.0000010288 | INTERFACIAL SHEARS//MICROBENDING LOSS//RAPID THERMAL PROCESSING RTP |
8 | 0.0000010109 | HETEROJUNCTION BIPOLAR TRANSISTORS//HETEROJUNCTION BIPOLAR TRANSISTORS HBTS//HETEROJUNCTION BIPOLAR TRANSISTOR HBT |
9 | 0.0000009597 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
10 | 0.0000008743 | BETA FESI2//SILICIDE//SILICIDES |