Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
603 | 13298 | 22.6 | 65% |
Classes in level above (level 3) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
15 | 127408 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
Classes in level below (level 1) |
ID, lev. below | Publications | Label for level below |
---|---|---|
531 | 3266 | TISI2//SALICIDE//NICKEL SILICIDE |
2434 | 2176 | SERIES RESISTANCE//BARRIER INHOMOGENEITY//IDEALITY FACTOR |
5496 | 1549 | VALENCE BAND DENSITY OF STATES//SURFACE MAGNETO OPTIC KERR EFFECT//METAL SEMICONDUCTOR THIN FILM |
7144 | 1324 | BETA FESI2//IRON DISILICIDE//FESI2 |
9208 | 1109 | FESI//MNSI//FE1 XCOXSI |
10756 | 969 | HIGHER MANGANESE SILICIDE//HIGHER MANGANESE SILICIDES//ADV THIN FILMS |
14599 | 693 | ERBIUM SILICIDE//ERSI2//YTTRIUM SILICIDE |
16616 | 579 | SCHOTTKY BARRIER SB//DOPANT SEGREGATION DS//SCHOTTKY BARRIER SB MOSFET |
18027 | 508 | BALLISTIC ELECTRON EMISSION MICROSCOPY//BALLISTIC ELECTRON EMISSION MICROSCOPY BEEM//BEEM |
18867 | 466 | LASER MOL BEAM EPITAXY//PTSI//IRIDIUM SILICIDES |
22861 | 310 | RU2SI3//OSSI2//CHROMIUM DISILICIDE |
23574 | 286 | RECONFIGURABLE TRANSISTOR//RFET//SILICIDE NANOWIRES |
34776 | 63 | NANOMETER SIZED SCHOTTKY CONTACT//METAL DOT ARRAY//NANO DIODE |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | BETA FESI2 | Author keyword | 394 | 82% | 2% | 226 |
2 | SILICIDE | Author keyword | 119 | 38% | 2% | 247 |
3 | SILICIDES | Author keyword | 109 | 35% | 2% | 252 |
4 | SERIES RESISTANCE | Author keyword | 86 | 36% | 1% | 190 |
5 | IRON DISILICIDE | Author keyword | 78 | 71% | 0% | 63 |
6 | BARRIER INHOMOGENEITY | Author keyword | 72 | 91% | 0% | 30 |
7 | NICKEL SILICIDE | Author keyword | 66 | 47% | 1% | 102 |
8 | ERBIUM SILICIDE | Author keyword | 58 | 92% | 0% | 23 |
9 | IDEALITY FACTOR | Author keyword | 57 | 40% | 1% | 111 |
10 | TISI2 | Author keyword | 56 | 61% | 0% | 59 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | BETA FESI2 | 394 | 82% | 2% | 226 | Search BETA+FESI2 | Search BETA+FESI2 |
2 | SILICIDE | 119 | 38% | 2% | 247 | Search SILICIDE | Search SILICIDE |
3 | SILICIDES | 109 | 35% | 2% | 252 | Search SILICIDES | Search SILICIDES |
4 | SERIES RESISTANCE | 86 | 36% | 1% | 190 | Search SERIES+RESISTANCE | Search SERIES+RESISTANCE |
5 | IRON DISILICIDE | 78 | 71% | 0% | 63 | Search IRON+DISILICIDE | Search IRON+DISILICIDE |
6 | BARRIER INHOMOGENEITY | 72 | 91% | 0% | 30 | Search BARRIER+INHOMOGENEITY | Search BARRIER+INHOMOGENEITY |
7 | NICKEL SILICIDE | 66 | 47% | 1% | 102 | Search NICKEL+SILICIDE | Search NICKEL+SILICIDE |
8 | ERBIUM SILICIDE | 58 | 92% | 0% | 23 | Search ERBIUM+SILICIDE | Search ERBIUM+SILICIDE |
9 | IDEALITY FACTOR | 57 | 40% | 1% | 111 | Search IDEALITY+FACTOR | Search IDEALITY+FACTOR |
10 | TISI2 | 56 | 61% | 0% | 59 | Search TISI2 | Search TISI2 |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | FESI2 | 490 | 88% | 2% | 232 |
2 | TISI2 | 489 | 75% | 3% | 351 |
3 | COSI2 | 466 | 71% | 3% | 380 |
4 | BETA FESI2 | 351 | 75% | 2% | 253 |
5 | 111 SI | 242 | 94% | 1% | 88 |
6 | SILICIDES | 241 | 38% | 4% | 499 |
7 | IRON DISILICIDE | 206 | 85% | 1% | 110 |
8 | MNSI | 204 | 66% | 1% | 192 |
9 | SILICIDE | 202 | 54% | 2% | 261 |
10 | NISI2 | 190 | 76% | 1% | 132 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Topological properties and dynamics of magnetic skyrmions | 2013 | 102 | 116 | 79% |
Recent advances in Schottky barrier concepts | 2001 | 525 | 343 | 40% |
The physics and chemistry of the Schottky barrier height | 2014 | 54 | 353 | 25% |
Silicides and ohmic contacts | 1998 | 267 | 270 | 70% |
Metal silicides in CMOS technology: Past, present, and future trends | 2003 | 188 | 459 | 81% |
Synthesis and applications of metal silicide nanowires | 2010 | 87 | 93 | 66% |
SILICIDES FOR INTEGRATED-CIRCUITS - TISI2 AND COSI2 | 1993 | 270 | 141 | 83% |
Formation and stability of silicides on polycrystalline silicon | 1996 | 162 | 93 | 86% |
Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films | 2006 | 62 | 72 | 86% |
SILICIDE THIN-FILMS AND THEIR APPLICATIONS IN MICROELECTRONICS | 1995 | 118 | 29 | 100% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | VOCAT MED SCI | 31 | 82% | 0.1% | 18 |
2 | OPTICIANRY | 26 | 80% | 0.1% | 16 |
3 | LASER MOL BEAM EPITAXY | 17 | 100% | 0.1% | 8 |
4 | NUCL ELECT RUMENTAT | 14 | 100% | 0.1% | 7 |
5 | VAKGROEP VASTE STOFWETEN PEN | 12 | 86% | 0.0% | 6 |
6 | ADV THIN FILMS | 11 | 100% | 0.0% | 6 |
7 | YSR ENGN | 8 | 75% | 0.0% | 6 |
8 | AUTOMAT CONTROL PROC | 7 | 13% | 0.4% | 49 |
9 | ADV I MEMS TEAM | 6 | 80% | 0.0% | 4 |
10 | VAKGRP VASTE STOFWETEN PEN | 6 | 58% | 0.1% | 7 |
Related classes at same level (level 2) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000013805 | DIFFUSION BARRIER//ELECTROMIGRATION//CU METALLIZATION |
2 | 0.0000010490 | GAMNAS//GA MNAS//MNAS |
3 | 0.0000009322 | GALLIUM ARSENIDE//SULFUR PASSIVATION//INDIUM ARSENIDE |
4 | 0.0000008866 | SCANNING TUNNELING MICROSCOPY//ATOM WI LAYERS//VICINAL SINGLE CRYSTAL SURFACES |
5 | 0.0000008743 | SIGE//GERMANIUM//STRAINED SI |
6 | 0.0000007694 | ION BEAM MIXING//RADIAT BEAM MAT ENGN//BALLISTIC MIXING |
7 | 0.0000005511 | LT GAAS//ULTRAHIGH FREQUENCY SEMICOND ELECT//LOW TEMPERATURE GROWN GAAS |
8 | 0.0000005366 | LATERAL PHOTOVOLTAGE//CEMOP//CONTINUOUS POSITION SENSITIVE DETECTOR |
9 | 0.0000005217 | SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT |
10 | 0.0000005176 | HFO2//HIGH K//HIGH K DIELECTRICS |