Class information for:
Level 2: SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
372 16511 20.0 54%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 3)


ID, lev.
above		 Publications Label for level above
256 41787 SOVIET PHYSICS SEMICONDUCTORS-USSR//GETTERING//SILICON

Classes in level below (level 1)


ID, lev. below Publications Label for level below
709 3076 TRANSIENT ENHANCED DIFFUSION//SWAMP//PAIR DIFFUSION MODEL
1483 2543 OXYGEN PRECIPITATION//GROWN IN DEFECT//CZOCHRALSKI SILICON
3841 1824 GETTERING//GETTERING EFFICIENCY//SI AU
4045 1782 HYDROGEN IN SILICON//MULTIVACANCY//HYDROGEN IN SI
7565 1273 RANGE PARAMETERS//SOFT ERROR MAPPING//HIGH ENERGY ION IMPLANTATION
9059 1125 LIFETIME CONTROL//SEMI INSULATING MATERIALS//POWER DIODES
9433 1087 IBIEC//SOLID PHASE EPITAXIAL GROWTH//LATERAL SOLID PHASE EPITAXY
11640 901 ION CUT//SURFACE BLISTERING//SMART CUT
12001 874 SIMOX//BURIED OXIDE LAYER//CONTACTLESS I V METHOD
13418 774 ELECT MAT DEVICES NANOSTRUCT//L DLTS//CNR IMM MATIS
18368 490 CLUSTER OF DEFECTS//GROUP II ELEMENTS//SI CD
22917 308 OPTIMIZATION OF ANNEALING//ERBIUM RELATED CENTRES//SELF ASSEMBLED SILICON QUANTUM WELLS
23011 305 ELECTRON BEAM ANNEALING//RAFTER//ION BEAM SYNTHESIS IBS
29685 149 FARADAY COLLECTOR//MAGNETIC ANALYZER//IMAGE WIDTH

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SWAMP Address 112 97% 0% 32
2 OXYGEN PRECIPITATION Author keyword 106 73% 0% 82
3 GROWN IN DEFECT Author keyword 94 97% 0% 28
4 CZOCHRALSKI SILICON Author keyword 90 64% 1% 87
5 TRANSIENT ENHANCED DIFFUSION Author keyword 87 70% 0% 73
6 GETTERING Author keyword 80 44% 1% 138
7 SELF INTERSTITIAL Author keyword 73 71% 0% 59
8 THERMAL DONORS Author keyword 62 66% 0% 58
9 OXYGEN PRECIPITATE Author keyword 60 80% 0% 37
10 DLTS Author keyword 51 23% 1% 193

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 OXYGEN PRECIPITATION 106 73% 0% 82 Search OXYGEN+PRECIPITATION Search OXYGEN+PRECIPITATION
2 GROWN IN DEFECT 94 97% 0% 28 Search GROWN+IN+DEFECT Search GROWN+IN+DEFECT
3 CZOCHRALSKI SILICON 90 64% 1% 87 Search CZOCHRALSKI+SILICON Search CZOCHRALSKI+SILICON
4 TRANSIENT ENHANCED DIFFUSION 87 70% 0% 73 Search TRANSIENT+ENHANCED+DIFFUSION Search TRANSIENT+ENHANCED+DIFFUSION
5 GETTERING 80 44% 1% 138 Search GETTERING Search GETTERING
6 SELF INTERSTITIAL 73 71% 0% 59 Search SELF+INTERSTITIAL Search SELF+INTERSTITIAL
7 THERMAL DONORS 62 66% 0% 58 Search THERMAL+DONORS Search THERMAL+DONORS
8 OXYGEN PRECIPITATE 60 80% 0% 37 Search OXYGEN+PRECIPITATE Search OXYGEN+PRECIPITATE
9 DLTS 51 23% 1% 193 Search DLTS Search DLTS
10 OXYGEN PRECIPITATES 49 68% 0% 43 Search OXYGEN+PRECIPITATES Search OXYGEN+PRECIPITATES

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 TRANSIENT ENHANCED DIFFUSION 447 76% 2% 309
2 DOPANT DIFFUSION 431 75% 2% 308
3 CZOCHRALSKI SILICON 368 64% 2% 358
4 OXYGEN PRECIPITATION 270 68% 1% 234
5 IRRADIATED SILICON 222 60% 1% 243
6 CZOCHRALSKI GROWN SILICON 173 72% 1% 136
7 B DIFFUSION 151 90% 0% 65
8 ION IMPLANTED SILICON 141 63% 1% 143
9 BORON DIFFUSION 138 56% 1% 170
10 IMPLANTED SILICON 131 51% 1% 181

Journals


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SOLID STATE PHENOMENA 17 17% 1% 92
2 RADIATION EFFECTS LETTERS 5 15% 0% 33
3 DEFECT AND DIFFUSION FORUM/JOURNAL 4 10% 0% 35

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon 1997 460 70 97%
Iron and its complexes in silicon 1999 306 221 93%
POINT-DEFECTS AND DOPANT DIFFUSION IN SILICON 1989 946 130 75%
Mechanisms of boron diffusion in silicon and germanium 2013 25 106 88%
Diffusion of n-type dopants in germanium 2014 8 139 92%
Transient enhanced diffusion of boron in Si 2002 167 83 93%
OXYGEN PRECIPITATION IN SILICON 1995 348 194 90%
Ion-beam-induced amorphization and recrystallization in silicon 2004 142 155 75%
Physics of copper in silicon 2002 208 147 56%
Hydrogen blistering of silicon: Progress in fundamental understanding 2007 59 110 93%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SWAMP 112 97% 0.2% 32
2 ELECT MAT DEVICES NANOSTRUCT 41 81% 0.2% 25
3 ION IMPLANTAT GRP 35 86% 0.1% 18
4 IMETEM 34 38% 0.4% 70
5 SIMULAT PART 18 89% 0.0% 8
6 MATIS 17 24% 0.4% 63
7 SITIX 17 79% 0.1% 11
8 ATSUGI S 17 100% 0.0% 8
9 RIAST 13 49% 0.1% 19
10 SEH ISOBE RD 11 67% 0.1% 10

Related classes at same level (level 2)


Rank Relatedness score Related classes
1 0.0000019152 EDGE DEFINED FILM FED GROWTH//MULTICRYSTALLINE SILICON//PROGRESS IN PHOTOVOLTAICS
2 0.0000013408 EL2//NONIONIZING ENERGY LOSS NIEL//DX CENTERS
3 0.0000012733 INTERFACIAL SILICON EMISSION//SILICON OXIDATION//GENIE URBAIN ENVIRONM
4 0.0000011007 MICROSYST IMICRO//MULTIPHONON RECOMBINATION//INFORMAT OPT TECHNOL
5 0.0000010534 SIGE//GERMANIUM//STRAINED SI
6 0.0000010532 INTENSE PULSED ION BEAM//HIGH CURRENT PULSED ELECTRON BEAM//HIGH INTENSITY PULSED ION BEAM
7 0.0000009427 PHOTORESIST REMOVAL//WET OZONE//HYDROGEN TERMINATION
8 0.0000007922 KLL TRANSITIONS//TDPAC//PERTURBED ANGULAR CORRELATIONS
9 0.0000007760 ION BEAM MIXING//RADIAT BEAM MAT ENGN//BALLISTIC MIXING
10 0.0000007697 AC SURFACE PHOTOVOLTAGE//ELECTRON WORK FUNCTION//SUPERCONDUCTIVITY MECHANISM