Class information for:
Level 2: GAN//NITRIDES//GALLIUM NITRIDE

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
33 32935 20.9 80%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 3)


ID, lev.
above		 Publications Label for level above
268 40112 GAN//NITRIDES//GALLIUM NITRIDE

Classes in level below (level 1)


ID, lev. below Publications Label for level below
101 4292 ALGAN GAN//HIGH ELECTRON MOBILITY TRANSISTOR HEMT//CURRENT COLLAPSE
200 3886 GAN//HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH
336 3554 INGAN//EFFICIENCY DROOP//ELECTRON BLOCKING LAYER EBL
2794 2072 LIGHT EXTRACTION EFFICIENCY//LIGHT EMITTING DIODE LED//PATTERNED SAPPHIRE SUBSTRATE PSS
2924 2036 OBNINSK BRANCH FED STATE UNITARY ENTERPRISE//YELLOW LUMINESCENCE//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
3751 1839 GAN NANOWIRES//AMMONIATING//GAN NANORODS
3823 1827 INN//INDIUM NITRIDE//INN PROJECT
6382 1427 A PLANE GAN//LED TECHNOL//NONPOLAR
6549 1402 SEMICONDUCTING ALUMINUM COMPOUNDS//CERAM OPERAT//ALGAN
8520 1175 P GAN//OHMIC CONTACT//OHMIC CONTACTS
9156 1114 CUBIC GAN//FB PHYS 6//HEXAGONAL GAN
9448 1086 METAL SEMICONDUCTOR METAL MSM//ULTRAVIOLET UV DETECTOR//PHOTODETECTORS PDS
11137 939 SI111 SUBSTRATES//SI111 SUBSTRATE//ALN BUFFER
11419 917 JUNCTION TEMPERATURE//PHOSPHOR IN GLASS//ANGULAR COLOR UNIFORMITY
14250 716 AL1 XINXN//ALINN//RESONANT CAVITY LIGHT EMITTING DIODE RCLED
15435 642 SPMM//PHOTON MULTISCALE NANOMAT//BUILT IN FIELDS
16071 608 ACT OPTOGAN//INGAAS ALASSB//FESTA S
16686 576 SOCIOTECHNO SCI TECHNOL//N GAN//GALLIUM HYDROXIDE
17235 546 EPITAXIAL SEMICOND GRP//EXP SOLID STATE PHYS 3//RECIPROCAL SPACE ANALYSIS
18025 508 GAN SURFACES//INTERDISCIPLINARY MODELLING//INTERDISCIPLINARY MAT MODELLING
18470 485 GAASSB//PHOTON INFORMAT ENGN//NON MARKOVIAN GAIN MODEL
18738 472 LIGAO2//AMORPHOUS GAN//NON POLAR NITRIDES
19750 427 FLUCTUAT//PLANAR GUNN DIODE//ELLIPSOIDAL VALLEYS
24692 254 TORAT PROSTHET DENT SECT//NCSU UNC CH JOINT BIOMED ENGN//IMMUNOFET
30646 135 P INGAN//GAN SIC HETEROJUNCTION//COMMON EMITTER

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of publ.
in class
1 GAN Author keyword 3015 58% 10% 3430
2 NITRIDES Author keyword 865 45% 4% 1445
3 GALLIUM NITRIDE Author keyword 783 56% 3% 956
4 MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH Journal 744 83% 1% 415
5 INGAN Author keyword 679 62% 2% 708
6 ALGAN Author keyword 485 60% 2% 531
7 GALLIUM COMPOUNDS Author keyword 420 46% 2% 691
8 ALGAN GAN Author keyword 338 64% 1% 335
9 AKASAKI Address 322 97% 0% 93
10 INN Author keyword 312 69% 1% 270

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of publ.
in class		 LCSH search Wikipedia search
1 GAN 3015 58% 10% 3430 Search GAN Search GAN
2 NITRIDES 865 45% 4% 1445 Search NITRIDES Search NITRIDES
3 GALLIUM NITRIDE 783 56% 3% 956 Search GALLIUM+NITRIDE Search GALLIUM+NITRIDE
4 INGAN 679 62% 2% 708 Search INGAN Search INGAN
5 ALGAN 485 60% 2% 531 Search ALGAN Search ALGAN
6 GALLIUM COMPOUNDS 420 46% 2% 691 Search GALLIUM+COMPOUNDS Search GALLIUM+COMPOUNDS
7 ALGAN GAN 338 64% 1% 335 Search ALGAN+GAN Search ALGAN+GAN
8 INN 312 69% 1% 270 Search INN Search INN
9 HYDRIDE VAPOR PHASE EPITAXY 301 79% 1% 194 Search HYDRIDE+VAPOR+PHASE+EPITAXY Search HYDRIDE+VAPOR+PHASE+EPITAXY
10 METALORGANIC CHEMICAL VAPOR DEPOSITION 259 47% 1% 412 Search METALORGANIC+CHEMICAL+VAPOR+DEPOSITION Search METALORGANIC+CHEMICAL+VAPOR+DEPOSITION

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of publ.
in class
1 GAN 4165 53% 17% 5452
2 GALLIUM NITRIDE 2304 69% 6% 1975
3 ALN 1059 52% 4% 1441
4 INN 912 66% 3% 853
5 VAPOR PHASE EPITAXY 905 40% 5% 1789
6 SAPPHIRE 743 33% 6% 1822
7 N TYPE GAN 686 72% 2% 545
8 INDIUM NITRIDE 685 81% 1% 417
9 FUNDAMENTAL BAND GAP 608 78% 1% 405
10 ALGAN 563 75% 1% 411

Journals


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 744 83% 1% 415
2 APPLIED PHYSICS EXPRESS 77 15% 1% 470

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Advances in transparent glass-ceramic phosphors for white light-emitting diodes-A review 2015 6 36 61%
When group-III nitrides go infrared: New properties and perspectives 2009 373 259 89%
First-principles calculations for defects and impurities: Applications to III-nitrides 2004 1012 153 75%
Band parameters for nitrogen-containing semiconductors 2003 1372 362 61%
GaN based nanorods for solid state lighting 2012 144 126 91%
Luminescence properties of defects in GaN 2005 662 471 80%
GaN: Processing, defects, and devices 1999 1033 405 75%
Ultraviolet light-emitting diodes based on group three nitrides 2008 246 78 99%
Indium nitride (InN): A review on growth, characterization, and properties 2003 565 149 97%
The roles of structural imperfections in InGaN-Based blue light-emitting diodes and laser diodes 1998 1047 62 97%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 AKASAKI 322 97% 0.3% 93
2 CRHEA 235 58% 0.8% 268
3 NITRIDE SEMICOND 164 88% 0.2% 76
4 SEMICOND 149 14% 2.9% 953
5 LED BUSINESS 138 96% 0.1% 44
6 UCSB GRP 130 97% 0.1% 36
7 GAN DEVICE TECHNOL 122 95% 0.1% 40
8 NANODEVICE SYST 116 74% 0.3% 87
9 STATE ARTIFICIAL MICROSTRUCT MESOSCOP P 113 43% 0.6% 204
10 RECH HETEROEPITAXIE PLICAT 102 65% 0.3% 97

Related classes at same level (level 2)


Rank Relatedness score Related classes
1 0.0000011218 GALLIUM OXIDE//BETA GA2O3//GA2O3
2 0.0000008685 ERBIUM//ERBIUM DOPED SILICON//ERBIUM IMPLANTATION
3 0.0000006933 INTERFACIAL SHEARS//MICROBENDING LOSS//RAPID THERMAL PROCESSING RTP
4 0.0000005944 SILICON CARBIDE//4H SIC//SIC
5 0.0000005621 GAINNAS//DILUTE NITRIDES//ANTIMONIDES
6 0.0000005468 SILICON NANOWIRES//QUANTUM DOT CELLULAR AUTOMATA QCA//QUANTUM DOT CELLULAR AUTOMATA
7 0.0000005102 ELECT ENGN OPTOELECT TECHNOL//GAN PHOTOCATHODE//GAAS PHOTOCATHODE
8 0.0000005097 IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL//SURFACE ACOUSTIC WAVE//PIEZOELECT DEVICE
9 0.0000004800 GAMNAS//GA MNAS//MNAS
10 0.0000004484 LT GAAS//ULTRAHIGH FREQUENCY SEMICOND ELECT//LOW TEMPERATURE GROWN GAAS