Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
3081 | 1887 | 15.4 | 38% |
Classes in level above (level 3) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
256 | 41787 | SOVIET PHYSICS SEMICONDUCTORS-USSR//GETTERING//SILICON |
Classes in level below (level 1) |
ID, lev. below | Publications | Label for level below |
---|---|---|
15087 | 663 | CURRENT DENSITY FILAMENT//HIGH FIELD DOMAIN//GUNN EFFECT |
24616 | 256 | MAT ELECT SOLAR CELLS//SURFACE THERMAL CONDUCTIVITY//NONEQUILIBRIUM CARRIERS |
24700 | 254 | DENSITY OF IRRIGATION//MOL CRYST PHYS//WAVES OSCILLATIONS AND INSTABILITIES IN PLASMA |
26341 | 211 | EFFECTIVE BLACKBODY TEMPERATURE//INFRARED SIGNAL RADIANCE//STIMULATED INFRARED EMISSION |
27811 | 181 | NON EQUILIBRIUM ELECTRONS//DEVICE MODELLING//ENGN STATE |
28847 | 161 | MULTIPLE TRAPPING IN LOCALIZED STATES//// |
28904 | 161 | BELOW GAP EXCITATION//NONRADIATIVE RECOMBINATION//BELOW GAP STATES |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | BELOW GAP EXCITATION | Author keyword | 18 | 89% | 0% | 8 |
2 | CURRENT DENSITY FILAMENT | Author keyword | 6 | 71% | 0% | 5 |
3 | GUNN EFFECT | Author keyword | 5 | 33% | 1% | 13 |
4 | HIGH FIELD DOMAIN | Author keyword | 5 | 63% | 0% | 5 |
5 | NONEQUILIBRIUM CARRIERS | Author keyword | 5 | 55% | 0% | 6 |
6 | MAT ELECT SOLAR CELLS | Address | 4 | 75% | 0% | 3 |
7 | SURFACE THERMAL CONDUCTIVITY | Author keyword | 4 | 75% | 0% | 3 |
8 | RECOMBINATION INSTABILITY | Author keyword | 3 | 100% | 0% | 3 |
9 | SEMICONDUCTOR BREAKDOWN | Author keyword | 3 | 100% | 0% | 3 |
10 | NON EQUILIBRIUM CARRIERS | Author keyword | 3 | 60% | 0% | 3 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ULTRAPURE GE | 23 | 100% | 1% | 10 |
2 | P GERMANIUM | 21 | 90% | 0% | 9 |
3 | BREATHING CURRENT FILAMENTS | 20 | 100% | 0% | 9 |
4 | TEMPERATURE IMPURITY BREAKDOWN | 20 | 100% | 0% | 9 |
5 | BIPOLAR SEMICONDUCTORS | 17 | 72% | 1% | 13 |
6 | CHAOTIC FLUCTUATIONS | 17 | 100% | 0% | 8 |
7 | IMPURITY BREAKDOWN | 12 | 75% | 0% | 9 |
8 | CURRENT FILAMENTS | 11 | 49% | 1% | 17 |
9 | DRIVEN CURRENT FILAMENT | 11 | 100% | 0% | 6 |
10 | HIGH PURITY SEMICONDUCTORS | 11 | 100% | 0% | 6 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
Physics of thermoelectric cooling | 2005 | 20 | 9 | 67% |
Slow domains in semi-insulating GaAs | 2001 | 48 | 69 | 39% |
Theory of thermoelectric cooling in semiconductor structures | 2007 | 8 | 11 | 82% |
THE ELECTRON PHONON DRAG AND TRANSPORT PHENOMENA IN SEMICONDUCTORS | 1989 | 31 | 8 | 88% |
AUTOSOLITONS | 1989 | 39 | 33 | 48% |
SELF-ORGANIZATION IN ACTIVE DISTRIBUTED MEDIA - SCENARIOS OF SPONTANEOUS FORMATION AND EVOLUTION OF DISSIPATIVE STRUCTURES | 1990 | 23 | 56 | 52% |
RECOMBINATION AND IONIZATION PROCESSES AT IMPURITY CENTERS IN HOT-ELECTRON SEMICONDUCTOR TRANSPORT | 1989 | 24 | 36 | 44% |
EXCLUSION EFFECT IN SEMICONDUCTORS WITH NON-INJECTING CONTACTS | 1984 | 14 | 1 | 100% |
DISSIPATIVE STRUCTURES AND THE PROBLEM OF BIOLOGICAL PATTERN-FORMATION | 1983 | 37 | 12 | 50% |
THE L-H JUNCTION AS AN ELEMENT OF THE SEMICONDUCTOR-DEVICE | 1984 | 4 | 1 | 100% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | MAT ELECT SOLAR CELLS | 4 | 75% | 0.2% | 3 |
2 | ELE ON ACCELERATOR | 1 | 21% | 0.3% | 6 |
3 | G FIS TEOR DESARROLLO SOFTWARE | 1 | 100% | 0.1% | 2 |
4 | ESIME CULHUACAN | 1 | 13% | 0.4% | 7 |
5 | CSTE DTC RT E SA | 1 | 50% | 0.1% | 1 |
6 | DEV TEST COMMAND | 1 | 50% | 0.1% | 1 |
7 | DEVICE MODELLING | 1 | 50% | 0.1% | 1 |
8 | ENGN STATE | 1 | 50% | 0.1% | 1 |
9 | INFORMATIONSTECHNOL | 1 | 50% | 0.1% | 1 |
10 | NANO POWDER MAT GRP | 1 | 50% | 0.1% | 1 |
Related classes at same level (level 2) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000024348 | MICROSYST IMICRO//MULTIPHONON RECOMBINATION//INFORMAT OPT TECHNOL |
2 | 0.0000012530 | GROOVE GUIDE//ADV STUDY RADIOPHYS ELECT//IMPATT DIODES |
3 | 0.0000009815 | QUASI NEUTRAL LIMIT//COMPRESSIBLE NAVIER STOKES EQUATIONS//DENSITY DEPENDENT VISCOSITY |
4 | 0.0000008281 | HIGH CURRENT ELECT//LINEAR TRANSFORMER DRIVER//GAS SWITCH |
5 | 0.0000006924 | HGCDTE//CERDEC NIGHT VIS ELECT SENSORS DIRECTORATE//MICROPHYS |
6 | 0.0000006751 | BELOUSOV ZHABOTINSKY REACTION//SPIRAL WAVE//EXCITABLE MEDIA |
7 | 0.0000006520 | EL2//NONIONIZING ENERGY LOSS NIEL//DX CENTERS |
8 | 0.0000006414 | EQUILIBRIUM AVERAGE PROJECTION SCHEME EAPS//ELECTRON PHONON COUPLING SYSTEM//ZERO RESISTANCE STATES |
9 | 0.0000006064 | ELECTROCHEMICAL OSCILLATIONS//IRON ELECTRODISSOLUTION//POTENTIAL OSCILLATIONS |
10 | 0.0000005978 | LT GAAS//ULTRAHIGH FREQUENCY SEMICOND ELECT//LOW TEMPERATURE GROWN GAAS |