Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
2877 | 2344 | 17.6 | 70% |
Classes in level above (level 3) |
Classes in level below (level 1) |
ID, lev. below | Publications | Label for level below |
---|---|---|
2845 | 2059 | ERBIUM//ERBIUM DOPED SILICON//ERBIUM IMPLANTATION |
29077 | 158 | OXIDE FLUORIDE//PYRO HYDROLYSIS//CRYSTAL STURUCTURE |
31175 | 127 | RADIOENGN ELE//HIGH ENERGY CHARGED PARTICLES//ZAVOISKII KAZAN PHYS TECH |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | ERBIUM | Author keyword | 24 | 12% | 8% | 191 |
2 | ERBIUM DOPED SILICON | Author keyword | 11 | 69% | 0% | 9 |
3 | ERBIUM IMPLANTATION | Author keyword | 7 | 67% | 0% | 6 |
4 | RARE EARTH IMPLANTATION | Author keyword | 6 | 80% | 0% | 4 |
5 | SOLID STATE OPTOELECT | Address | 6 | 80% | 0% | 4 |
6 | GAGDN | Author keyword | 6 | 71% | 0% | 5 |
7 | SI ER | Author keyword | 6 | 100% | 0% | 4 |
8 | SUBLIMATION MBE | Author keyword | 6 | 100% | 0% | 4 |
9 | LIGHT EMITTING STRUCTURES | Author keyword | 5 | 63% | 0% | 5 |
10 | RUTHERFORD BACKSCATTERING TECHNIQUE | Author keyword | 5 | 44% | 0% | 8 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | ERBIUM | 24 | 12% | 8% | 191 | Search ERBIUM | Search ERBIUM |
2 | ERBIUM DOPED SILICON | 11 | 69% | 0% | 9 | Search ERBIUM+DOPED+SILICON | Search ERBIUM+DOPED+SILICON |
3 | ERBIUM IMPLANTATION | 7 | 67% | 0% | 6 | Search ERBIUM+IMPLANTATION | Search ERBIUM+IMPLANTATION |
4 | RARE EARTH IMPLANTATION | 6 | 80% | 0% | 4 | Search RARE+EARTH+IMPLANTATION | Search RARE+EARTH+IMPLANTATION |
5 | GAGDN | 6 | 71% | 0% | 5 | Search GAGDN | Search GAGDN |
6 | SI ER | 6 | 100% | 0% | 4 | Search SI++ER | Search SI++ER |
7 | SUBLIMATION MBE | 6 | 100% | 0% | 4 | Search SUBLIMATION+MBE | Search SUBLIMATION+MBE |
8 | LIGHT EMITTING STRUCTURES | 5 | 63% | 0% | 5 | Search LIGHT+EMITTING+STRUCTURES | Search LIGHT+EMITTING+STRUCTURES |
9 | RUTHERFORD BACKSCATTERING TECHNIQUE | 5 | 44% | 0% | 8 | Search RUTHERFORD+BACKSCATTERING+TECHNIQUE | Search RUTHERFORD+BACKSCATTERING+TECHNIQUE |
10 | RARE EARTH DOPED SEMICONDUCTOR | 4 | 67% | 0% | 4 | Search RARE+EARTH+DOPED+SEMICONDUCTOR | Search RARE+EARTH+DOPED+SEMICONDUCTOR |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ERBIUM | 73 | 21% | 13% | 304 |
2 | IMPLANTED GAN | 53 | 44% | 4% | 91 |
3 | ER IMPLANTED GAN | 44 | 88% | 1% | 21 |
4 | EARTH DOPED GAN | 42 | 78% | 1% | 28 |
5 | INTRA 4F SHELL LUMINESCENCE | 41 | 87% | 1% | 20 |
6 | EU DOPED GAN | 40 | 71% | 1% | 32 |
7 | CRYSTALLINE SI | 39 | 41% | 3% | 74 |
8 | O LUMINESCENCE CENTER | 38 | 78% | 1% | 25 |
9 | RED LIGHT EMISSION | 33 | 75% | 1% | 24 |
10 | OPTICAL ACTIVATION | 33 | 67% | 1% | 29 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Recent developments in rare-earth doped materials for optoelectronics | 2002 | 350 | 155 | 46% |
Erbium implanted thin film photonic materials | 1997 | 859 | 108 | 31% |
Erbium in silicon | 2005 | 104 | 141 | 65% |
Prospects for rare earth doped GaN lasers on Si | 2007 | 53 | 29 | 62% |
LUMINESCENCE PROPERTIES OF ERBIUM IN III-V COMPOUND SEMICONDUCTORS | 1995 | 77 | 31 | 81% |
Thermal quenching of luminescence and isovalent trap model for rare-earth-ion-doped AlN | 2007 | 26 | 73 | 53% |
Lattice Location of RE Impurities in III-Nitrides | 2010 | 4 | 58 | 78% |
RE Implantation and Annealing of III-Nitrides | 2010 | 4 | 48 | 67% |
RARE-EARTH ELEMENTS IN III-V SEMICONDUCTORS (REVIEW) | 1990 | 35 | 41 | 93% |
Combined Excitation Emission Spectroscopy (CEES) of RE Ions in Gallium Nitride | 2010 | 2 | 38 | 76% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SOLID STATE OPTOELECT | 6 | 80% | 0.2% | 4 |
2 | EUROPEAN OFF | 4 | 22% | 0.6% | 15 |
3 | FOR UNGSZENTRUM ISI 2 | 3 | 100% | 0.1% | 3 |
4 | FOR UNGSZENTRUM ZCH | 3 | 100% | 0.1% | 3 |
5 | CHAIR MAT PHYS | 3 | 50% | 0.2% | 4 |
6 | VAN WAALS ZEEMAN | 2 | 12% | 0.8% | 18 |
7 | GRP MAT ENGN SUPERFICIES | 2 | 29% | 0.2% | 5 |
8 | STOCKER | 2 | 22% | 0.3% | 7 |
9 | CONDENSED MATTER SUR E SCI PROGRAM | 2 | 10% | 0.7% | 16 |
10 | MICROFABRITECH | 2 | 24% | 0.3% | 6 |
Related classes at same level (level 2) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000020865 | POROUS SILICON//SILICON NANOCRYSTALS//SI NANOCRYSTALS |
2 | 0.0000012753 | GAMNAS//GA MNAS//MNAS |
3 | 0.0000008901 | GALLIUM OXIDE//BETA GA2O3//GA2O3 |
4 | 0.0000008685 | GAN//NITRIDES//GALLIUM NITRIDE |
5 | 0.0000008302 | FIBER LASERS//FIBER LASER//OPTICAL FIBER LASERS |
6 | 0.0000006286 | EL2//NONIONIZING ENERGY LOSS NIEL//DX CENTERS |
7 | 0.0000006108 | SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT |
8 | 0.0000006058 | MICROSYST IMICRO//MULTIPHONON RECOMBINATION//INFORMAT OPT TECHNOL |
9 | 0.0000005945 | EDGE DEFINED FILM FED GROWTH//MULTICRYSTALLINE SILICON//PROGRESS IN PHOTOVOLTAICS |
10 | 0.0000005521 | PHOSPHORS//PHOSPHOR//LUMINESCENCE |