Class information for:
Level 2: GAAS ON SI//GAAS SI//GAINP

Basic class information

ID Publications Average number
of references
Avg. shr. active
ref. in WoS
260 18934 17.9 65%



Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 3)



ID, lev.
above
Publications Label for level above
87 77161 SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//JOURNAL OF CRYSTAL GROWTH

Classes in level below (level 1)



ID, lev. below Publications Label for level below
2435 2176 TRIMETHYLINDIUM//CHEMICAL BEAM EPITAXY CBE//MOLECULAR LAYER EPITAXY
2976 2021 GAINP//GAP INP SHORT PERIOD SUPERLATTICE//SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE
3078 1990 GAAS ON SI//GAAS SI//GAP ON SI
5569 1539 MISFIT DISLOCATIONS//GRADED BUFFER LAYER//DISLOCATION COMPENSATION
5865 1495 MEV ION IMPLANTATION//ACTIVATION EFFICIENCY//COLD IMPLANTS
6403 1423 REFLECTION MASS SPECTROMETRY//2D ISLAND//INTERFACE DISORDER
6404 1423 QUANTUM WELL INTERMIXING//QUANTUM WELL INTERDIFFUSION//IMPURITY FREE DISORDERING
8231 1206 ELECTROEPITAXY//MICROCHANNEL EPITAXY//LIQUID PHASE ELECTROEPITAXY
11342 922 SELECTIVE AREA GROWTH//TERTIARYBUTYLCHLORIDE//SELECTIVE EPITAXY
13030 801 CARBON DOPING//CBR4//C DOPED GAAS
13056 799 INASP INP//INASP//QUANTUM PHOTOVOLTA GRP
13932 740 OVAL DEFECTS//SEEIE//GA AS BI SOLUTION
17665 524 FAK PHYS CHEM//INDIUM SEGREGATION//IN DESORPTION
18076 505 INALAS INP//INALAS ALLOYS//INALAS ALASSB
18301 493 CD4GESE6//ELECTRICITY PROPERTIES//ELECTROCHEMICAL C V PROFILING
20926 379 ING ELECT SEES//SECC PUEBLA//ALLOY SOURCE
21809 347 LUMILEDS LIGHTING//ZINC DIFFUSION//ACCEPTOR DIFFUSION
29520 151 IN082GA018AS//SHORT WAVELENGTH INFRARED//INFRARED IMAGING MAT DETECTORS

Terms with highest relevance score



Rank Term Type of term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 GAAS ON SI Author keyword 99 77% 0% 67
2 GAAS SI Author keyword 59 78% 0% 39
3 GAINP Author keyword 43 47% 0% 68
4 MICROCHANNEL EPITAXY Author keyword 33 100% 0% 13
5 QUANTUM WELL INTERMIXING Author keyword 29 38% 0% 62
6 MOMBE Author keyword 27 42% 0% 49
7 SEMICONDUCTING III V MATERIALS Author keyword 26 12% 1% 208
8 SELECTIVE EPITAXY Author keyword 26 27% 0% 82
9 SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE Author keyword 25 66% 0% 23
10 MOVPE Author keyword 22 13% 1% 160

Web of Science journal categories

Author Key Words



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
LCSH search Wikipedia search
1 GAAS ON SI 99 77% 0% 67 Search GAAS+ON+SI Search GAAS+ON+SI
2 GAAS SI 59 78% 0% 39 Search GAAS+SI Search GAAS+SI
3 GAINP 43 47% 0% 68 Search GAINP Search GAINP
4 MICROCHANNEL EPITAXY 33 100% 0% 13 Search MICROCHANNEL+EPITAXY Search MICROCHANNEL+EPITAXY
5 QUANTUM WELL INTERMIXING 29 38% 0% 62 Search QUANTUM+WELL+INTERMIXING Search QUANTUM+WELL+INTERMIXING
6 MOMBE 27 42% 0% 49 Search MOMBE Search MOMBE
7 SEMICONDUCTING III V MATERIALS 26 12% 1% 208 Search SEMICONDUCTING+III+V+MATERIALS Search SEMICONDUCTING+III+V+MATERIALS
8 SELECTIVE EPITAXY 26 27% 0% 82 Search SELECTIVE+EPITAXY Search SELECTIVE+EPITAXY
9 SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE 25 66% 0% 23 Search SEMICONDUCTING+INDIUM+GALLIUM+PHOSPHIDE Search SEMICONDUCTING+INDIUM+GALLIUM+PHOSPHIDE
10 MOVPE 22 13% 1% 160 Search MOVPE Search MOVPE

Key Words Plus



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of publ.
in class
1 GA05IN05P 377 86% 1% 195
2 GAAS 291 10% 14% 2692
3 GAINP 257 69% 1% 218
4 GA052IN048P 232 96% 0% 72
5 MOMBE 187 76% 1% 133
6 INP 165 17% 5% 858
7 VAPOR PHASE EPITAXY 151 17% 4% 786
8 MISFIT DISLOCATIONS 140 32% 2% 359
9 GAINP2 129 89% 0% 58
10 ALGAINP 128 77% 0% 87

Journals



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 ACTA POLYTECHNICA SCANDINAVICA-CHEMICAL TECHNOLOGY SERIES 2 20% 0% 10

Reviews



Title Publ. year Cit. Active references % act. ref.
to same field
GALLIUM-ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS ON SILICON 1990 378 122 80%
Plastic relaxation and relaxed buffer layers for semiconductor epitaxy 1996 116 207 61%
Stresses and strains in epilayers, stripes and quantum structures of III-V compound semiconductors 1996 113 111 59%
GaAs epitaxy on Si substrates: modern status of research and engineering 2008 49 207 51%
Misfit strain and misfit dislocations in lattice mismatched epitaxial layers and other systems 1997 133 93 41%
Strain and strain relaxation in semiconductors 1997 86 104 58%
HETEROINTERFACES IN QUANTUM-WELLS AND EPITAXIAL-GROWTH PROCESSES - EVALUATION BY LUMINESCENCE TECHNIQUES 1991 238 233 64%
ATOM DIFFUSION AND IMPURITY-INDUCED LAYER DISORDERING IN QUANTUM WELL III-V SEMICONDUCTOR HETEROSTRUCTURES 1988 313 113 95%
MISFIT DISLOCATIONS IN LATTICE-MISMATCHED EPITAXIAL-FILMS 1992 152 73 70%
Point defects and diffusion in thin films of GaAs 1997 45 77 81%

Address terms



Rank Address term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 OPT SEMICOND 8 70% 0.0% 7
2 MASPEC 8 17% 0.2% 45
3 TORINO TECHNOL 8 100% 0.0% 5
4 OMVPE IL 6 80% 0.0% 4
5 MICROSTRUCT DEVICES 6 24% 0.1% 22
6 ENVIRONM TECHNOL URBAN PLANNING 5 11% 0.2% 45
7 INFRARED IMAGING MAT DETECTORS 5 20% 0.1% 22
8 MICROSTRUCT DEVICES SHOWA KU 4 75% 0.0% 3
9 NOWON KU 4 14% 0.1% 27
10 ELE OPHOTON MAT DEVICES 4 21% 0.1% 15

Related classes at same level (level 2)



Rank Relatedness score Related classes
1 0.0000018456 LT GAAS//ULTRAHIGH FREQUENCY SEMICOND ELECT//LOW TEMPERATURE GROWN GAAS
2 0.0000017475 EL2//NONIONIZING ENERGY LOSS NIEL//DX CENTERS
3 0.0000016876 GAINNAS//DILUTE NITRIDES//ANTIMONIDES
4 0.0000015287 SUPERLATTICES AND MICROSTRUCTURES//HYDROGENIC IMPURITY//QUANTUM WELL WIRES
5 0.0000014949 ENERGIA SOLAR//LUMINESCENT SOLAR CONCENTRATORS//INTERMEDIATE BAND
6 0.0000014036 GALLIUM ARSENIDE//SULFUR PASSIVATION//INDIUM ARSENIDE
7 0.0000013906 INTERFACIAL SHEARS//MICROBENDING LOSS//RAPID THERMAL PROCESSING RTP
8 0.0000012836 SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//IEEE PHOTONICS TECHNOLOGY LETTERS
9 0.0000011891 SIGE//GERMANIUM//STRAINED SI
10 0.0000011751 HETEROJUNCTION BIPOLAR TRANSISTORS//HETEROJUNCTION BIPOLAR TRANSISTORS HBTS//HETEROJUNCTION BIPOLAR TRANSISTOR HBT