Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
260 | 18934 | 17.9 | 65% |
Classes in level above (level 3) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
87 | 77161 | SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//JOURNAL OF CRYSTAL GROWTH |
Classes in level below (level 1) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | GAAS ON SI | Author keyword | 99 | 77% | 0% | 67 |
2 | GAAS SI | Author keyword | 59 | 78% | 0% | 39 |
3 | GAINP | Author keyword | 43 | 47% | 0% | 68 |
4 | MICROCHANNEL EPITAXY | Author keyword | 33 | 100% | 0% | 13 |
5 | QUANTUM WELL INTERMIXING | Author keyword | 29 | 38% | 0% | 62 |
6 | MOMBE | Author keyword | 27 | 42% | 0% | 49 |
7 | SEMICONDUCTING III V MATERIALS | Author keyword | 26 | 12% | 1% | 208 |
8 | SELECTIVE EPITAXY | Author keyword | 26 | 27% | 0% | 82 |
9 | SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE | Author keyword | 25 | 66% | 0% | 23 |
10 | MOVPE | Author keyword | 22 | 13% | 1% | 160 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GAAS ON SI | 99 | 77% | 0% | 67 | Search GAAS+ON+SI | Search GAAS+ON+SI |
2 | GAAS SI | 59 | 78% | 0% | 39 | Search GAAS+SI | Search GAAS+SI |
3 | GAINP | 43 | 47% | 0% | 68 | Search GAINP | Search GAINP |
4 | MICROCHANNEL EPITAXY | 33 | 100% | 0% | 13 | Search MICROCHANNEL+EPITAXY | Search MICROCHANNEL+EPITAXY |
5 | QUANTUM WELL INTERMIXING | 29 | 38% | 0% | 62 | Search QUANTUM+WELL+INTERMIXING | Search QUANTUM+WELL+INTERMIXING |
6 | MOMBE | 27 | 42% | 0% | 49 | Search MOMBE | Search MOMBE |
7 | SEMICONDUCTING III V MATERIALS | 26 | 12% | 1% | 208 | Search SEMICONDUCTING+III+V+MATERIALS | Search SEMICONDUCTING+III+V+MATERIALS |
8 | SELECTIVE EPITAXY | 26 | 27% | 0% | 82 | Search SELECTIVE+EPITAXY | Search SELECTIVE+EPITAXY |
9 | SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE | 25 | 66% | 0% | 23 | Search SEMICONDUCTING+INDIUM+GALLIUM+PHOSPHIDE | Search SEMICONDUCTING+INDIUM+GALLIUM+PHOSPHIDE |
10 | MOVPE | 22 | 13% | 1% | 160 | Search MOVPE | Search MOVPE |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | GA05IN05P | 377 | 86% | 1% | 195 |
2 | GAAS | 291 | 10% | 14% | 2692 |
3 | GAINP | 257 | 69% | 1% | 218 |
4 | GA052IN048P | 232 | 96% | 0% | 72 |
5 | MOMBE | 187 | 76% | 1% | 133 |
6 | INP | 165 | 17% | 5% | 858 |
7 | VAPOR PHASE EPITAXY | 151 | 17% | 4% | 786 |
8 | MISFIT DISLOCATIONS | 140 | 32% | 2% | 359 |
9 | GAINP2 | 129 | 89% | 0% | 58 |
10 | ALGAINP | 128 | 77% | 0% | 87 |
Journals |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ACTA POLYTECHNICA SCANDINAVICA-CHEMICAL TECHNOLOGY SERIES | 2 | 20% | 0% | 10 |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
GALLIUM-ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS ON SILICON | 1990 | 378 | 122 | 80% |
Plastic relaxation and relaxed buffer layers for semiconductor epitaxy | 1996 | 116 | 207 | 61% |
Stresses and strains in epilayers, stripes and quantum structures of III-V compound semiconductors | 1996 | 113 | 111 | 59% |
GaAs epitaxy on Si substrates: modern status of research and engineering | 2008 | 49 | 207 | 51% |
Misfit strain and misfit dislocations in lattice mismatched epitaxial layers and other systems | 1997 | 133 | 93 | 41% |
Strain and strain relaxation in semiconductors | 1997 | 86 | 104 | 58% |
HETEROINTERFACES IN QUANTUM-WELLS AND EPITAXIAL-GROWTH PROCESSES - EVALUATION BY LUMINESCENCE TECHNIQUES | 1991 | 238 | 233 | 64% |
ATOM DIFFUSION AND IMPURITY-INDUCED LAYER DISORDERING IN QUANTUM WELL III-V SEMICONDUCTOR HETEROSTRUCTURES | 1988 | 313 | 113 | 95% |
MISFIT DISLOCATIONS IN LATTICE-MISMATCHED EPITAXIAL-FILMS | 1992 | 152 | 73 | 70% |
Point defects and diffusion in thin films of GaAs | 1997 | 45 | 77 | 81% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | OPT SEMICOND | 8 | 70% | 0.0% | 7 |
2 | MASPEC | 8 | 17% | 0.2% | 45 |
3 | TORINO TECHNOL | 8 | 100% | 0.0% | 5 |
4 | OMVPE IL | 6 | 80% | 0.0% | 4 |
5 | MICROSTRUCT DEVICES | 6 | 24% | 0.1% | 22 |
6 | ENVIRONM TECHNOL URBAN PLANNING | 5 | 11% | 0.2% | 45 |
7 | INFRARED IMAGING MAT DETECTORS | 5 | 20% | 0.1% | 22 |
8 | MICROSTRUCT DEVICES SHOWA KU | 4 | 75% | 0.0% | 3 |
9 | NOWON KU | 4 | 14% | 0.1% | 27 |
10 | ELE OPHOTON MAT DEVICES | 4 | 21% | 0.1% | 15 |
Related classes at same level (level 2) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000018456 | LT GAAS//ULTRAHIGH FREQUENCY SEMICOND ELECT//LOW TEMPERATURE GROWN GAAS |
2 | 0.0000017475 | EL2//NONIONIZING ENERGY LOSS NIEL//DX CENTERS |
3 | 0.0000016876 | GAINNAS//DILUTE NITRIDES//ANTIMONIDES |
4 | 0.0000015287 | SUPERLATTICES AND MICROSTRUCTURES//HYDROGENIC IMPURITY//QUANTUM WELL WIRES |
5 | 0.0000014949 | ENERGIA SOLAR//LUMINESCENT SOLAR CONCENTRATORS//INTERMEDIATE BAND |
6 | 0.0000014036 | GALLIUM ARSENIDE//SULFUR PASSIVATION//INDIUM ARSENIDE |
7 | 0.0000013906 | INTERFACIAL SHEARS//MICROBENDING LOSS//RAPID THERMAL PROCESSING RTP |
8 | 0.0000012836 | SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//IEEE PHOTONICS TECHNOLOGY LETTERS |
9 | 0.0000011891 | SIGE//GERMANIUM//STRAINED SI |
10 | 0.0000011751 | HETEROJUNCTION BIPOLAR TRANSISTORS//HETEROJUNCTION BIPOLAR TRANSISTORS HBTS//HETEROJUNCTION BIPOLAR TRANSISTOR HBT |