Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
2557 | 3267 | 19.0 | 45% |
Classes in level above (level 3) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
15 | 127408 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
Classes in level below (level 1) |
ID, lev. below | Publications | Label for level below |
---|---|---|
7628 | 1266 | INTERFACIAL SILICON EMISSION//SILICON OXIDATION//LOW TEMPERATURE SILICON OXIDATION |
14795 | 680 | BOROPHOSPHOSILICATE GLASS BPSG//ATMOSPHERIC PRESSURE CVD//BPSG |
20142 | 411 | IRRADIATED P N JUNCTION LEAKAGE//JUNCTION SHAPE//P N JUNCTION LEAKAGE |
21535 | 357 | GENIE URBAIN ENVIRONM//COMPUTERISING//OXYNITRIDE FILMS |
24944 | 247 | SIPOS//MSOS O P STRUCTURE//SEMI INSULATING POLYCRYSTALLINE SILICON |
30693 | 134 | ELECTRICAL PASSIVATION OF STRUCTURAL DEFECTS//GAAS DIODE//TRIPLE CRYSTAL DIFFRACTOMETRY |
33328 | 94 | HITACHI ADM//SOLAR CELL METALLIZATION// |
34107 | 78 | CONE DEFECT//DYED RESIST//NITRIDE BUBBLES |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | INTERFACIAL SILICON EMISSION | Author keyword | 11 | 100% | 0% | 6 |
2 | SILICON OXIDATION | Author keyword | 7 | 36% | 0% | 16 |
3 | GENIE URBAIN ENVIRONM | Address | 6 | 80% | 0% | 4 |
4 | SEMI INSULATING POLYCRYSTALLINE SILICON | Author keyword | 4 | 75% | 0% | 3 |
5 | LOW TEMPERATURE SILICON OXIDATION | Author keyword | 3 | 100% | 0% | 3 |
6 | THERMALLY GROWN SIO2 | Author keyword | 3 | 60% | 0% | 3 |
7 | SI OXIDATION | Author keyword | 3 | 42% | 0% | 5 |
8 | THERMAL SIO2 | Author keyword | 3 | 42% | 0% | 5 |
9 | BOROPHOSPHOSILICATE GLASS BPSG | Author keyword | 2 | 67% | 0% | 2 |
10 | COMPUTERISING | Author keyword | 2 | 67% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | DRY OXYGEN | 27 | 46% | 1% | 44 |
2 | LOW TEMPERATURE REFLOW | 27 | 92% | 0% | 11 |
3 | BOROPHOSPHOSILICATE GLASS | 25 | 66% | 1% | 23 |
4 | 10 MTORR | 18 | 89% | 0% | 8 |
5 | SIPOS | 17 | 68% | 0% | 15 |
6 | THIN REGIME | 14 | 59% | 0% | 16 |
7 | SI001 SIO2 INTERFACE | 14 | 42% | 1% | 25 |
8 | SI100 SIO2 INTERFACE | 14 | 65% | 0% | 13 |
9 | TEOS | 13 | 21% | 2% | 55 |
10 | PHOSPHOSILICATE GLASS | 13 | 62% | 0% | 13 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
GROWTH-MECHANISM OF THIN SILICON-OXIDE FILMS ON SI(100) STUDIED BY MEDIUM-ENERGY ION-SCATTERING | 1995 | 139 | 84 | 36% |
Silicon oxidation by ozone | 2009 | 9 | 82 | 51% |
MODELS FOR THE OXIDATION OF SILICON | 1988 | 63 | 60 | 72% |
PROCESS AND FILM CHARACTERIZATION OF LOW-PRESSURE TETRAETHYLORTHOSILICATE-BOROPHOSPHOSILICATE GLASS | 1986 | 69 | 26 | 85% |
Photon-assisted oxidation and oxide thin film synthesis: A review | 2009 | 22 | 267 | 10% |
Characterization and production metrology of thin transistor gate oxide films | 1999 | 41 | 48 | 27% |
Electrical and optical properties of semi-insulating polycrystalline silicon thin films: The role of microstructure and doping | 1996 | 21 | 55 | 47% |
OXIDATION OF SILICON - THE VLSI GATE DIELECTRIC | 1995 | 73 | 91 | 21% |
THE PULSED MIS CAPACITOR - A CRITICAL-REVIEW | 1985 | 53 | 8 | 100% |
CVD of SiO2 and related materials: An overview | 1996 | 14 | 37 | 54% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | GENIE URBAIN ENVIRONM | 6 | 80% | 0.1% | 4 |
2 | THEORIE PHENOMENES PHYS ITP | 2 | 67% | 0.1% | 2 |
3 | QAS | 1 | 100% | 0.1% | 2 |
4 | SHIGA TECHNOL | 1 | 29% | 0.1% | 4 |
5 | LSI BUSINESS TECHNOL DEV GRP | 1 | 40% | 0.1% | 2 |
6 | PPH ECUBLENS | 1 | 17% | 0.2% | 5 |
7 | MAT PL SCI | 1 | 11% | 0.2% | 7 |
8 | IMAGE TECHNOL GRP | 1 | 33% | 0.1% | 2 |
9 | ADV EDRAM | 1 | 50% | 0.0% | 1 |
10 | CNC CO | 1 | 50% | 0.0% | 1 |
Related classes at same level (level 2) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000063006 | PHOTORESIST REMOVAL//WET OZONE//HYDROGEN TERMINATION |
2 | 0.0000020049 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
3 | 0.0000015531 | INTERFACIAL SHEARS//MICROBENDING LOSS//RAPID THERMAL PROCESSING RTP |
4 | 0.0000014441 | H CURIEN//PHYS ASTRON SCI//TRANSPARENT ELE OACT MAT PROJECT |
5 | 0.0000012733 | SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT |
6 | 0.0000012235 | AC SURFACE PHOTOVOLTAGE//ELECTRON WORK FUNCTION//SUPERCONDUCTIVITY MECHANISM |
7 | 0.0000011227 | HFO2//HIGH K//HIGH K DIELECTRICS |
8 | 0.0000011187 | POROUS SILICON//SILICON NANOCRYSTALS//SI NANOCRYSTALS |
9 | 0.0000010012 | SCANNING TUNNELING MICROSCOPY//ATOM WI LAYERS//VICINAL SINGLE CRYSTAL SURFACES |
10 | 0.0000009942 | MICROCRYSTALLINE SILICON//JOURNAL OF NON-CRYSTALLINE SOLIDS//PHOTOVOLTA THIN FILM ELECT |