Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
1993 | 5054 | 15.9 | 37% |
Classes in level above (level 3) |
Classes in level below (level 1) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | NANOELECT GIGASCALE SYST | Address | 108 | 72% | 2% | 84 |
2 | ELECTROSTATIC DISCHARGE ESD | Author keyword | 107 | 43% | 4% | 192 |
3 | SILICON CONTROLLED RECTIFIER SCR | Author keyword | 77 | 72% | 1% | 61 |
4 | SPECIFIC ON RESISTANCE | Author keyword | 57 | 60% | 1% | 61 |
5 | BREAKDOWN VOLTAGE BV | Author keyword | 46 | 76% | 1% | 32 |
6 | SUPERJUNCTION SJ | Author keyword | 45 | 90% | 0% | 19 |
7 | LATCH UP | Author keyword | 38 | 45% | 1% | 65 |
8 | INSULATED GATE BIPOLAR TRANSISTOR IGBT | Author keyword | 38 | 45% | 1% | 64 |
9 | LATERAL INSULATED GATE BIPOLAR TRANSISTOR LIGBT | Author keyword | 37 | 100% | 0% | 14 |
10 | HOLDING VOLTAGE | Author keyword | 36 | 79% | 0% | 23 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ON RESISTANCE | 91 | 69% | 2% | 78 |
2 | LDMOS | 48 | 63% | 1% | 49 |
3 | IGBT | 40 | 47% | 1% | 63 |
4 | ESD PROTECTION | 33 | 61% | 1% | 35 |
5 | ELECTROTHERMAL SIMULATION | 28 | 56% | 1% | 35 |
6 | IGBT MODULES | 27 | 60% | 1% | 30 |
7 | DRIFT REGION | 23 | 86% | 0% | 12 |
8 | LATCH UP | 23 | 49% | 1% | 35 |
9 | INCLUDING QUASI SATURATION | 23 | 100% | 0% | 10 |
10 | IGBTS | 22 | 41% | 1% | 43 |
Journals |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 11 | 10% | 2% | 98 |
2 | ALCATEL TELECOMMUNICATIONS REVIEW | 3 | 14% | 0% | 17 |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
A review of IGBT models | 2000 | 65 | 26 | 100% |
Status and trends of power semiconductor device models for circuit simulation | 1998 | 53 | 29 | 97% |
A review of HVI technology | 2014 | 1 | 17 | 100% |
A review on RF ESD protection design | 2005 | 57 | 8 | 63% |
Physics-of-Failure Lifetime Prediction Models for Wire Bond Interconnects in Power Electronic Modules | 2013 | 9 | 18 | 50% |
A review of electrostatic discharge (ESD) in advanced semiconductor technology | 2004 | 14 | 1 | 100% |
SILICON-ON-INSULATOR DEVICES FOR HIGH-VOLTAGE AND POWER IC APPLICATIONS | 1994 | 35 | 6 | 83% |
Anode engineering for the insulated gate bipolar transistor - A comparative review | 2007 | 11 | 10 | 90% |
A Review of Super Junction LDMOS | 2011 | 4 | 5 | 100% |
Review of Silicon Power Semiconductor Technologies for Power Supply on Chip and Power Supply in Package Applications | 2013 | 5 | 5 | 40% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | NANOELECT GIGASCALE SYST | 108 | 72% | 1.7% | 84 |
2 | MARINE ELECT | 26 | 46% | 0.9% | 43 |
3 | ESD | 13 | 41% | 0.5% | 24 |
4 | ASIC SYST ENGN | 9 | 21% | 0.7% | 36 |
5 | CORP ESD | 8 | 75% | 0.1% | 6 |
6 | EMERGING TECHNOL | 7 | 16% | 0.8% | 41 |
7 | ELE ON DEVICES | 7 | 23% | 0.5% | 27 |
8 | KATEDRA ELEKT MORSKIEJ | 7 | 53% | 0.2% | 9 |
9 | POWER IND | 6 | 80% | 0.1% | 4 |
10 | ROBERT BO POWER ELECT | 6 | 80% | 0.1% | 4 |
Related classes at same level (level 2) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000014823 | HETEROJUNCTION BIPOLAR TRANSISTORS//HETEROJUNCTION BIPOLAR TRANSISTORS HBTS//HETEROJUNCTION BIPOLAR TRANSISTOR HBT |
2 | 0.0000012262 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
3 | 0.0000009817 | SILICON CARBIDE//4H SIC//SIC |
4 | 0.0000009474 | HIGH CURRENT ELECT//LINEAR TRANSFORMER DRIVER//GAS SWITCH |
5 | 0.0000008251 | ELECTROCHEMICAL MIGRATION//SECT PROD PROC QUAL//MECHANICAL RELIABILITY PREDICTION |
6 | 0.0000007404 | LEAD FREE SOLDER//SOLDERING & SURFACE MOUNT TECHNOLOGY//PB FREE SOLDER |
7 | 0.0000006832 | IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY//SIGNAL INTEGRITY//REVERBERATION CHAMBER RC |
8 | 0.0000006412 | ULTRASONIC WELDING//WIRE BONDING//ULTRASONIC CONSOLIDATION |
9 | 0.0000006122 | IEEE TRANSACTIONS ON POWER ELECTRONICS//IET POWER ELECTRONICS//IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS |
10 | 0.0000005429 | THERMAL CONTACT CONDUCTANCE//THERMAL CONTACT RESISTANCE//PYROCERAM 9606 |