Class information for:
Level 2: LT GAAS//ULTRAHIGH FREQUENCY SEMICOND ELECT//LOW TEMPERATURE GROWN GAAS

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
1771 5849 15.5 61%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 3)


ID, lev.
above		 Publications Label for level above
87 77161 SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//JOURNAL OF CRYSTAL GROWTH

Classes in level below (level 1)


ID, lev. below Publications Label for level below
2421 2181 ULTRAHIGH FREQUENCY SEMICOND ELECT//INALAS INGAAS//HIGH ELECTRON MOBILITY TRANSISTORS
7097 1330 SOLID PHASE REGROWTH//PD GE//OHMIC CONTACTS
9876 1048 LT GAAS//LOW TEMPERATURE GROWN GAAS//LOW TEMPERATURE GAAS
16188 601 ATSUGI ELECT COMMUN S FUNCT DEVICE DEV//INTEGRATED PROD BUSINESS UNIT//SINGLE VOLTAGE SUPPLY
19720 428 DRAIN CURRENT TRANSIENT//FUNCT ELEMENTS CONTROL SYST//GATE LAG
24454 261 ERSB//INP111A//DYAS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 LT GAAS Author keyword 38 58% 1% 44
2 ULTRAHIGH FREQUENCY SEMICOND ELECT Address 36 77% 0% 24
3 LOW TEMPERATURE GROWN GAAS Author keyword 26 56% 1% 32
4 INALAS INGAAS Author keyword 18 53% 0% 23
5 HIGH ELECTRON MOBILITY TRANSISTORS Author keyword 16 19% 1% 76
6 LOW TEMPERATURE GAAS Author keyword 15 62% 0% 16
7 METAMORPHIC Author keyword 12 27% 1% 39
8 HEMT Author keyword 12 10% 2% 113
9 GATE VOLTAGE SWING Author keyword 11 65% 0% 11
10 T GATE Author keyword 11 41% 0% 21

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 LT GAAS 38 58% 1% 44 Search LT+GAAS Search LT+GAAS
2 LOW TEMPERATURE GROWN GAAS 26 56% 1% 32 Search LOW+TEMPERATURE+GROWN+GAAS Search LOW+TEMPERATURE+GROWN+GAAS
3 INALAS INGAAS 18 53% 0% 23 Search INALAS+INGAAS Search INALAS+INGAAS
4 HIGH ELECTRON MOBILITY TRANSISTORS 16 19% 1% 76 Search HIGH+ELECTRON+MOBILITY+TRANSISTORS Search HIGH+ELECTRON+MOBILITY+TRANSISTORS
5 LOW TEMPERATURE GAAS 15 62% 0% 16 Search LOW+TEMPERATURE+GAAS Search LOW+TEMPERATURE+GAAS
6 METAMORPHIC 12 27% 1% 39 Search METAMORPHIC Search METAMORPHIC
7 HEMT 12 10% 2% 113 Search HEMT Search HEMT
8 GATE VOLTAGE SWING 11 65% 0% 11 Search GATE+VOLTAGE+SWING Search GATE+VOLTAGE+SWING
9 T GATE 11 41% 0% 21 Search T+GATE Search T+GATE
10 GAAS MESFET 11 28% 1% 33 Search GAAS+MESFET Search GAAS+MESFET

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 HEMTS 73 19% 6% 336
2 MESFETS 50 33% 2% 126
3 INALAS INGAAS HEMTS 48 65% 1% 46
4 DOPED CHANNEL 45 94% 0% 16
5 SOLID PHASE REGROWTH 41 100% 0% 15
6 BEAM EPITAXIAL GAAS 34 58% 1% 39
7 PSEUDOMORPHIC HEMTS 26 58% 1% 30
8 LOW SUBSTRATE TEMPERATURES 25 47% 1% 39
9 GAAS MESFETS 23 24% 1% 85
10 ELECTRON MOBILITY TRANSISTORS 21 14% 2% 140

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Mechanisms of current flow in metal-semiconductor ohmic contacts 2007 51 268 41%
LOW-TEMPERATURE-GROWN III-V MATERIALS 1995 77 92 78%
RECENT DEVELOPMENTS IN OHMIC CONTACTS FOR III-V COMPOUND SEMICONDUCTORS 1992 135 137 86%
Molecular beam epitaxy of nonstoichiometric semiconductors and multiphase material systems 1996 39 114 61%
Reliability physics of compound semiconductor transistors for microwave applications 2001 20 53 58%
EPITAXY OF DISSIMILAR MATERIALS 1995 42 106 58%
Hot electron effects and degradation of GaAs and InP HEMTs for microwave and millimetre-wave applications 1998 13 24 96%
ULTRA-HIGH-SPEED MODULATION-DOPED FIELD-EFFECT TRANSISTORS - A TUTORIAL REVIEW 1992 83 37 51%
Ohmic contacts to GaAs epitaxial layers 1997 14 92 78%
OHMIC METAL III-V-SEMICONDUCTOR CONTACTS - FABRICATION METHODS AND PROPERTIES (REVIEW) 1994 11 48 83%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ULTRAHIGH FREQUENCY SEMICOND ELECT 36 77% 0.4% 24
2 MICROWAVE SEMICOND ELECT 6 47% 0.2% 9
3 KANSAI ELECT S 6 38% 0.2% 12
4 FUNCT ELEMENTS CONTROL SYST 6 50% 0.1% 8
5 MILLIMETER WAVE INNOVAT TECHNOL 5 23% 0.3% 19
6 MRSEC TECHNOL ENABLING HETEROSTRUCT MAT 5 63% 0.1% 5
7 MICROWAVE DEVICES TEAM 4 67% 0.1% 4
8 ATSUGI ELECT COMMUN S FUNCT DEVICE DEV 4 75% 0.1% 3
9 ULTRAFAST SYST GRP 4 75% 0.1% 3
10 ULTRA HIGH FREQUENCY SEMICOND ELECT 4 46% 0.1% 6

Related classes at same level (level 2)


Rank Relatedness score Related classes
1 0.0000022014 GALLIUM ARSENIDE//SULFUR PASSIVATION//INDIUM ARSENIDE
2 0.0000021245 ADV SUBSUR E IMAGING//PHOTODETECTORS//PHOTODIODES
3 0.0000019198 EQUILIBRIUM AVERAGE PROJECTION SCHEME EAPS//ELECTRON PHONON COUPLING SYSTEM//ZERO RESISTANCE STATES
4 0.0000018456 GAAS ON SI//GAAS SI//GAINP
5 0.0000013963 EL2//NONIONIZING ENERGY LOSS NIEL//DX CENTERS
6 0.0000013869 HETEROJUNCTION BIPOLAR TRANSISTORS//HETEROJUNCTION BIPOLAR TRANSISTORS HBTS//HETEROJUNCTION BIPOLAR TRANSISTOR HBT
7 0.0000008619 GAINNAS//DILUTE NITRIDES//ANTIMONIDES
8 0.0000007927 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES//IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS//MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
9 0.0000007093 QUASI NEUTRAL LIMIT//COMPRESSIBLE NAVIER STOKES EQUATIONS//DENSITY DEPENDENT VISCOSITY
10 0.0000006627 ELECT DEVICES MAT TECHNOL//PLASMA ETCHING//SIO2 ETCHING