Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
1700 | 6150 | 15.5 | 50% |
Classes in level above (level 3) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
87 | 77161 | SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//JOURNAL OF CRYSTAL GROWTH |
Classes in level below (level 1) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | HETEROJUNCTION BIPOLAR TRANSISTORS | Author keyword | 80 | 40% | 3% | 158 |
2 | HETEROJUNCTION BIPOLAR TRANSISTORS HBTS | Author keyword | 65 | 55% | 1% | 82 |
3 | HETEROJUNCTION BIPOLAR TRANSISTOR HBT | Author keyword | 64 | 42% | 2% | 116 |
4 | HETEROJUNCTION BIPOLAR TRANSISTOR | Author keyword | 61 | 42% | 2% | 112 |
5 | HBT | Author keyword | 60 | 28% | 3% | 186 |
6 | BIPOLAR TRANSISTORS | Author keyword | 43 | 34% | 2% | 103 |
7 | BASE TRANSIT TIME | Author keyword | 29 | 88% | 0% | 14 |
8 | A AMA MICROELECT SCI TECHNOL | Address | 28 | 44% | 1% | 47 |
9 | POTENTIAL SPIKE | Author keyword | 27 | 76% | 0% | 19 |
10 | BIPOLAR DEVICES | Author keyword | 27 | 44% | 1% | 46 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HETEROJUNCTION BIPOLAR TRANSISTORS | 80 | 40% | 3% | 158 | Search HETEROJUNCTION+BIPOLAR+TRANSISTORS | Search HETEROJUNCTION+BIPOLAR+TRANSISTORS |
2 | HETEROJUNCTION BIPOLAR TRANSISTORS HBTS | 65 | 55% | 1% | 82 | Search HETEROJUNCTION+BIPOLAR+TRANSISTORS+HBTS | Search HETEROJUNCTION+BIPOLAR+TRANSISTORS+HBTS |
3 | HETEROJUNCTION BIPOLAR TRANSISTOR HBT | 64 | 42% | 2% | 116 | Search HETEROJUNCTION+BIPOLAR+TRANSISTOR+HBT | Search HETEROJUNCTION+BIPOLAR+TRANSISTOR+HBT |
4 | HETEROJUNCTION BIPOLAR TRANSISTOR | 61 | 42% | 2% | 112 | Search HETEROJUNCTION+BIPOLAR+TRANSISTOR | Search HETEROJUNCTION+BIPOLAR+TRANSISTOR |
5 | HBT | 60 | 28% | 3% | 186 | Search HBT | Search HBT |
6 | BIPOLAR TRANSISTORS | 43 | 34% | 2% | 103 | Search BIPOLAR+TRANSISTORS | Search BIPOLAR+TRANSISTORS |
7 | BASE TRANSIT TIME | 29 | 88% | 0% | 14 | Search BASE+TRANSIT+TIME | Search BASE+TRANSIT+TIME |
8 | POTENTIAL SPIKE | 27 | 76% | 0% | 19 | Search POTENTIAL+SPIKE | Search POTENTIAL+SPIKE |
9 | BIPOLAR DEVICES | 27 | 44% | 1% | 46 | Search BIPOLAR+DEVICES | Search BIPOLAR+DEVICES |
10 | SIGEHBT | 26 | 37% | 1% | 57 | Search SIGEHBT | Search SIGEHBT |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | HBTS | 231 | 57% | 5% | 277 |
2 | HETEROJUNCTION BIPOLAR TRANSISTORS | 224 | 40% | 7% | 440 |
3 | BIPOLAR TRANSISTORS | 142 | 39% | 5% | 285 |
4 | CURRENT GAIN | 132 | 61% | 2% | 141 |
5 | OFFSET VOLTAGE | 90 | 80% | 1% | 56 |
6 | SURFACE RECOMBINATION CURRENT | 49 | 94% | 0% | 17 |
7 | 77 K APPLICATIONS | 44 | 88% | 0% | 21 |
8 | CHARGE CONTROL RELATION | 35 | 89% | 0% | 16 |
9 | HBT | 33 | 46% | 1% | 53 |
10 | ALGAAS GAAS HBTS | 30 | 59% | 1% | 34 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
SiGe HBT technology: A new contender for Si-based RF and microwave circuit applications | 1998 | 197 | 40 | 53% |
Scaling of SiGe heterojunction bipolar transistors | 2005 | 31 | 29 | 52% |
POLYSILICON EMITTERS FOR BIPOLAR-TRANSISTORS - A REVIEW AND REEVALUATION OF THEORY AND EXPERIMENT | 1992 | 38 | 49 | 94% |
Photovoltaic phenomena in inhomogeneous semiconductors | 2003 | 4 | 5 | 100% |
SILICON BIPOLAR DEVICE STRUCTURES FOR DIGITAL APPLICATIONS - TECHNOLOGY TRENDS AND FUTURE-DIRECTIONS | 1995 | 13 | 48 | 81% |
SiGe HBT for application in BiCMOS technology: II. Design, technology and performance | 2001 | 20 | 29 | 45% |
REVIEW OF ANALYTICAL MODELS FOR THE STUDY OF HIGHLY DOPED REGIONS OF SILICON DEVICES | 1989 | 30 | 12 | 100% |
Methods for Determining the Emitter Resistance in SiGe HBTs: A Review and an Evaluation Across Technology Generations | 2015 | 0 | 16 | 94% |
GAAS HBTS FOR MICROWAVE INTEGRATED-CIRCUITS | 1993 | 16 | 50 | 80% |
THEORY OF BAND TAILS IN HEAVILY DOPED SEMICONDUCTORS | 1992 | 59 | 42 | 26% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | A AMA MICROELECT SCI TECHNOL | 28 | 44% | 0.8% | 47 |
2 | CSDL | 7 | 50% | 0.2% | 10 |
3 | INP IC TEAM | 6 | 100% | 0.1% | 4 |
4 | WIDE BAND G SEMICOND MAT DEVICES CHIN | 6 | 100% | 0.1% | 4 |
5 | UMR 5818 CNRS | 3 | 57% | 0.1% | 4 |
6 | MICROELECT SEMICOND DEV | 3 | 60% | 0.0% | 3 |
7 | DELFT MICROSYST NANOELECT DIMES | 3 | 21% | 0.2% | 11 |
8 | NANOTECHNOL RD | 3 | 30% | 0.1% | 7 |
9 | QNERC | 2 | 67% | 0.0% | 2 |
10 | RF OEICS | 2 | 67% | 0.0% | 2 |
Related classes at same level (level 2) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000016497 | ADV SUBSUR E IMAGING//PHOTODETECTORS//PHOTODIODES |
2 | 0.0000014823 | NANOELECT GIGASCALE SYST//ELECTROSTATIC DISCHARGE ESD//SILICON CONTROLLED RECTIFIER SCR |
3 | 0.0000013869 | LT GAAS//ULTRAHIGH FREQUENCY SEMICOND ELECT//LOW TEMPERATURE GROWN GAAS |
4 | 0.0000013183 | IEEE JOURNAL OF SOLID-STATE CIRCUITS//CLOCK AND DATA RECOVERY CDR//PHASE LOCKED LOOP PLL |
5 | 0.0000012691 | EDGE DEFINED FILM FED GROWTH//MULTICRYSTALLINE SILICON//PROGRESS IN PHOTOVOLTAICS |
6 | 0.0000011751 | GAAS ON SI//GAAS SI//GAINP |
7 | 0.0000011639 | LOW FREQUENCY NOISE//1 F NOISE//LOW FREQUENCY LF NOISE |
8 | 0.0000010109 | SIGE//GERMANIUM//STRAINED SI |
9 | 0.0000009049 | QUASI NEUTRAL LIMIT//COMPRESSIBLE NAVIER STOKES EQUATIONS//DENSITY DEPENDENT VISCOSITY |
10 | 0.0000008848 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |