Class information for:
Level 2: IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
138 22619 18.4 54%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 3)


ID, lev.
above		 Publications Label for level above
15 127408 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS

Classes in level below (level 1)


ID, lev. below Publications Label for level below
490 3322 DOUBLE GATE MOSFET//FINFET//SHORT CHANNEL EFFECTS
1989 2332 OXIDE TRAPPED CHARGE//ELDRS//TOTAL IONIZING DOSE
2430 2179 HOT CARRIER//CHANNEL INITIATED SECONDARY ELECTRON CHISEL//HOT CARRIER DEGRADATION
2748 2082 STRESS INDUCED LEAKAGE CURRENT//SOFT BREAKDOWN//DIELECTRIC BREAKDOWN BD
5427 1558 BORON PENETRATION//REMOTE PLASMA NITRIDATION RPN//SI NITRIDE
6224 1448 SONOS//CHARGE TRAPPING LAYER//FLASH MEMORY
6423 1420 NETWORK COMPUTAT NANOTECHNOL//QUASI BALLISTIC TRANSPORT//JOURNAL OF COMPUTATIONAL ELECTRONICS
12737 821 DIRECT TUNNELING//QUANTUM MECHANICAL EFFECTS QMES//WAVE FUNCTION PENETRATION
13725 754 DEVICE MODELLING GRP//RANDOM DOPANT//DEVICE MODELING GRP
14407 705 TUNNELING FIELD EFFECT TRANSISTOR TFET//TUNNEL FIELD EFFECT TRANSISTOR TFET//TUNNEL FET TFET
14953 671 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//CHRISTIAN DOPPLER TCAD
15174 658 DATA RETENTION TIME//VOLTAGE DOWN CONVERTER//FERROELECTRIC MEMORY
15475 640 CHARGE PUMP//SWITCHED CAPACITOR SC CONVERTER//SWITCHED CAPACITOR SC CONVERTERS
16565 582 CRYOGENIC CMOS//LOW TEMPERATURE ELECTRONICS//LOW TEMPERATURE CIRCUIT
17884 514 FILM EDGE//SHAPE ENGINEERING//SILICON TECHNOLOGIES
19370 444 SINGLE EVENT BURNOUT SEB//SINGLE EVENT GATE RUPTURE SEGR//RREACT GRP
19674 430 ELLIPSOIDAL TECHNIQUE//DESIGN CENTERING//PARAMETRIC YIELD
21484 359 NONQUASI STATIC NQS EFFECT//QUCS//RSCE
21676 352 POLYOXIDE//INTERPOLY OXIDE//NONPLANAR POLYOXIDE
21883 345 CARL EMILY FUCHS MICROELECT//CEFIM//EUROPEAN QUAL
22933 307 SIDEWALL OXIDATION//COMPUTAT ELECT//MEMORY DEVICE BUSINESS
23498 289 CAPACITORLESS DRAM//1T DRAM//CAPACITORLESS 1T DRAM
25929 221 MOS TUNNELING DIODE//ELECTRON HOLE PLASMA RECOMBINATION//LATERAL NONUNIFORMITY LNU
32316 110 SID4//DEUTERIUM D ANNEALING//TRAP CREATION
34219 76 BACK BIAS EFFECT//VERTICAL MOSFET//SURROUNDING GATE TRANSISTOR

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of publ.
in class
1 IEEE TRANSACTIONS ON ELECTRON DEVICES Journal 817 23% 14% 3190
2 IEEE ELECTRON DEVICE LETTERS Journal 379 20% 7% 1691
3 SOLID-STATE ELECTRONICS Journal 349 18% 8% 1734
4 MOSFET Author keyword 295 29% 4% 880
5 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI Author keyword 212 71% 1% 172
6 MOSFETS Author keyword 203 41% 2% 391
7 FINFET Author keyword 194 45% 1% 327
8 MICROELECTRONICS RELIABILITY Journal 185 17% 4% 980
9 TUNNELING FIELD EFFECT TRANSISTOR TFET Author keyword 180 96% 0% 54
10 SONOS Author keyword 162 72% 1% 127

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 MOSFET 295 29% 4% 880 Search MOSFET Search MOSFET
2 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI 212 71% 1% 172 Search NEGATIVE+BIAS+TEMPERATURE+INSTABILITY+NBTI Search NEGATIVE+BIAS+TEMPERATURE+INSTABILITY+NBTI
3 MOSFETS 203 41% 2% 391 Search MOSFETS Search MOSFETS
4 FINFET 194 45% 1% 327 Search FINFET Search FINFET
5 TUNNELING FIELD EFFECT TRANSISTOR TFET 180 96% 0% 54 Search TUNNELING+FIELD+EFFECT+TRANSISTOR+TFET Search TUNNELING+FIELD+EFFECT+TRANSISTOR+TFET
6 SONOS 162 72% 1% 127 Search SONOS Search SONOS
7 TUNNEL FIELD EFFECT TRANSISTOR TFET 144 89% 0% 65 Search TUNNEL+FIELD+EFFECT+TRANSISTOR+TFET Search TUNNEL+FIELD+EFFECT+TRANSISTOR+TFET
8 DOUBLE GATE MOSFET 132 68% 1% 116 Search DOUBLE+GATE+MOSFET Search DOUBLE+GATE+MOSFET
9 MOS DEVICES 127 50% 1% 184 Search MOS+DEVICES Search MOS+DEVICES
10 THRESHOLD VOLTAGE 109 30% 1% 305 Search THRESHOLD+VOLTAGE Search THRESHOLD+VOLTAGE

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of publ.
in class
1 MOSFETS 851 37% 8% 1868
2 SOI MOSFETS 497 65% 2% 473
3 INDUCED LEAKAGE CURRENT 248 72% 1% 194
4 TRAP GENERATION 212 74% 1% 159
5 THRESHOLD VOLTAGE 185 41% 2% 354
6 THRESHOLD VOLTAGE MODEL 170 78% 1% 114
7 MOS DEVICES 168 52% 1% 231
8 MOS TRANSISTORS 147 39% 1% 299
9 SONOS 137 75% 0% 100
10 SI SIO2 INTERFACE 134 34% 1% 328

Journals


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of publ.
in class
1 IEEE TRANSACTIONS ON ELECTRON DEVICES 817 23% 14% 3190
2 IEEE ELECTRON DEVICE LETTERS 379 20% 7% 1691
3 SOLID-STATE ELECTRONICS 349 18% 8% 1734
4 MICROELECTRONICS RELIABILITY 185 17% 4% 980
5 JOURNAL OF COMPUTATIONAL ELECTRONICS 73 27% 1% 234
6 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 64 24% 1% 231
7 IEEE TRANSACTIONS ON NANOTECHNOLOGY 20 11% 1% 172
8 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 16 10% 1% 150
9 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 12 18% 0% 64
10 IEEE CIRCUITS & DEVICES 4 11% 0% 32

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Tunnel field-effect transistors as energy-efficient electronic switches 2011 286 45 73%
Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors 2011 113 18 89%
Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing 2003 450 53 72%
Ultrathin (< 4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits 2001 531 522 43%
Ultra-thin dielectric breakdown in devices and circuits: A brief review 2015 1 30 90%
The negative bias temperature instability in MOS devices: A review 2006 158 49 88%
Total ionizing dose effects in MOS oxides and devices 2003 194 98 95%
Future Prospects of NAND Flash Memory Technology-The Evolution from Floating Gate to Charge Trapping to 3D Stacking 2012 27 1 100%
Dielectric breakdown mechanisms in gate oxides 2005 136 99 94%
Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs 2003 272 49 57%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 DEVICE MODELLING GRP 102 73% 0.3% 78
2 RREACT GRP 76 93% 0.1% 28
3 DEVICE MODELING GRP 40 82% 0.1% 23
4 RD TECHNOL DEV 39 80% 0.1% 24
5 NETWORK COMPUTAT NANOTECHNOL 37 40% 0.3% 72
6 ELECT TECNOL COMP 36 38% 0.3% 75
7 IMEP LAHC 33 29% 0.4% 97
8 ADV LSI TECHNOL 33 35% 0.3% 76
9 EECS ENGN 31 92% 0.1% 12
10 ELECT ENGN DISCIPLINE 31 92% 0.1% 12

Related classes at same level (level 2)


Rank Relatedness score Related classes
1 0.0000020049 INTERFACIAL SILICON EMISSION//SILICON OXIDATION//GENIE URBAIN ENVIRONM
2 0.0000019810 HFO2//HIGH K//HIGH K DIELECTRICS
3 0.0000013839 LOW FREQUENCY NOISE//1 F NOISE//LOW FREQUENCY LF NOISE
4 0.0000012262 NANOELECT GIGASCALE SYST//ELECTROSTATIC DISCHARGE ESD//SILICON CONTROLLED RECTIFIER SCR
5 0.0000011225 PHOTORESIST REMOVAL//WET OZONE//HYDROGEN TERMINATION
6 0.0000009597 SIGE//GERMANIUM//STRAINED SI
7 0.0000009033 QUASI NEUTRAL LIMIT//COMPRESSIBLE NAVIER STOKES EQUATIONS//DENSITY DEPENDENT VISCOSITY
8 0.0000008848 HETEROJUNCTION BIPOLAR TRANSISTORS//HETEROJUNCTION BIPOLAR TRANSISTORS HBTS//HETEROJUNCTION BIPOLAR TRANSISTOR HBT
9 0.0000007784 THIN FILM TRANSISTOR//THIN FILM TRANSISTORS TFTS//THIN FILM TRANSISTOR TFT
10 0.0000007742 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS//IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS//HIGH LEVEL SYNTHESIS