Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
1376 | 7700 | 23.6 | 65% |
Classes in level above (level 3) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
87 | 77161 | SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//JOURNAL OF CRYSTAL GROWTH |
Classes in level below (level 1) |
ID, lev. below | Publications | Label for level below |
---|---|---|
2596 | 2125 | WEBSTER//ADIABATIC BOND CHARGE MODEL//INAS110 |
6651 | 1387 | GAAS MOSFET//INTERFACE CONTROL LAYER//III V MOSFET |
8084 | 1220 | ELECTRON COUNTING MODEL//SUR E STUDY//GA ADATOM |
9033 | 1127 | SULFUR PASSIVATION//PHOSPHIDIZATION//PHOSPHINE PLASMA |
10650 | 978 | SEMICOND INTEGRATED CIRCUIT//SCI TECH FES SAIS//HIGFET |
21500 | 358 | ATOMIC HYDROGEN CLEANING//ECR HYDROGEN PLASMA//IN SITU VACUUM PROCESS |
23201 | 299 | ELECTROMAGNETIC GREENS FUNCTION//COUPLED PLASMON PHONON MODE//EDUC MACROMOLEC |
29504 | 151 | MESA STEP HEIGHT//LAVOISIER IREM//IMAGE ARRAY |
35020 | 55 | INDIUM PHOSPHIDE100//INTERACTION IONS MATTER//SIMULATION METHOD TRIM |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | GALLIUM ARSENIDE | Author keyword | 38 | 12% | 4% | 299 |
2 | SULFUR PASSIVATION | Author keyword | 31 | 63% | 0% | 31 |
3 | INDIUM ARSENIDE | Author keyword | 23 | 27% | 1% | 74 |
4 | GAAS MOSFET | Author keyword | 21 | 75% | 0% | 15 |
5 | ELECTRON COUNTING MODEL | Author keyword | 18 | 89% | 0% | 8 |
6 | INTERFACE CONTROL LAYER | Author keyword | 15 | 82% | 0% | 9 |
7 | INDIUM PHOSPHIDE | Author keyword | 13 | 14% | 1% | 87 |
8 | PHOSPHIDIZATION | Author keyword | 12 | 86% | 0% | 6 |
9 | SUR E STUDY | Address | 12 | 86% | 0% | 6 |
10 | III V MOSFET | Author keyword | 10 | 58% | 0% | 11 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GALLIUM ARSENIDE | 38 | 12% | 4% | 299 | Search GALLIUM+ARSENIDE | Search GALLIUM+ARSENIDE |
2 | SULFUR PASSIVATION | 31 | 63% | 0% | 31 | Search SULFUR+PASSIVATION | Search SULFUR+PASSIVATION |
3 | INDIUM ARSENIDE | 23 | 27% | 1% | 74 | Search INDIUM+ARSENIDE | Search INDIUM+ARSENIDE |
4 | GAAS MOSFET | 21 | 75% | 0% | 15 | Search GAAS+MOSFET | Search GAAS+MOSFET |
5 | ELECTRON COUNTING MODEL | 18 | 89% | 0% | 8 | Search ELECTRON+COUNTING+MODEL | Search ELECTRON+COUNTING+MODEL |
6 | INTERFACE CONTROL LAYER | 15 | 82% | 0% | 9 | Search INTERFACE+CONTROL+LAYER | Search INTERFACE+CONTROL+LAYER |
7 | INDIUM PHOSPHIDE | 13 | 14% | 1% | 87 | Search INDIUM+PHOSPHIDE | Search INDIUM+PHOSPHIDE |
8 | PHOSPHIDIZATION | 12 | 86% | 0% | 6 | Search PHOSPHIDIZATION | Search PHOSPHIDIZATION |
9 | III V MOSFET | 10 | 58% | 0% | 11 | Search III+V+MOSFET | Search III+V+MOSFET |
10 | PHOSPHINE PLASMA | 9 | 83% | 0% | 5 | Search PHOSPHINE+PLASMA | Search PHOSPHINE+PLASMA |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SB OVERLAYERS | 187 | 95% | 1% | 61 |
2 | GAAS110 | 125 | 40% | 3% | 245 |
3 | GAAS SURFACES | 114 | 49% | 2% | 168 |
4 | GAAS100 SURFACES | 102 | 59% | 2% | 116 |
5 | GAAS001 SURFACES | 99 | 63% | 1% | 100 |
6 | 110 SURFACES | 97 | 53% | 2% | 130 |
7 | SCHOTTKY BARRIER FORMATION | 95 | 46% | 2% | 153 |
8 | SULFUR PASSIVATION | 87 | 65% | 1% | 83 |
9 | HETEROSTRUCTURE BIPOLAR TRANSISTOR | 69 | 93% | 0% | 26 |
10 | NH42SX TREATED GAAS | 69 | 93% | 0% | 26 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Nanometre-scale electronics with III-V compound semiconductors | 2011 | 304 | 50 | 64% |
Surface chemistry of prototypical bulk II-VI and III-V semiconductors and implications for chemical sensing | 2000 | 216 | 168 | 51% |
Chalcogenide passivation of III-V semiconductor surfaces | 1998 | 81 | 171 | 92% |
Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications | 2011 | 54 | 155 | 85% |
III-V compound semiconductor (001) surfaces | 2002 | 82 | 98 | 83% |
Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces | 1997 | 130 | 149 | 62% |
III-V/Ge channel MOS device technologies in nano CMOS era | 2015 | 1 | 160 | 36% |
Surface reconstructions on GaAs(001) | 2008 | 52 | 127 | 85% |
Semiconductor surface reconstruction: The structural chemistry of two-dimensional surface compounds | 1996 | 184 | 197 | 38% |
Interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates | 2013 | 12 | 203 | 47% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SUR E STUDY | 12 | 86% | 0.1% | 6 |
2 | SEMICOND SUR E PHYS | 6 | 71% | 0.1% | 5 |
3 | INTER E QUANTUM ELECT | 6 | 20% | 0.3% | 25 |
4 | WEBSTER | 4 | 26% | 0.2% | 12 |
5 | CSEA | 3 | 22% | 0.1% | 11 |
6 | COMP SCI ENGN SCI PHYS | 2 | 33% | 0.1% | 6 |
7 | FG OBERFLACHENFOR | 2 | 67% | 0.0% | 2 |
8 | JOINT BIOMED ENGN NCSU UNC CH | 2 | 50% | 0.0% | 3 |
9 | UFR SCI MAT | 2 | 29% | 0.1% | 6 |
10 | QUANTUM SEMICOND PHOTON BASED BIONANOTECHNO | 2 | 31% | 0.1% | 5 |
Related classes at same level (level 2) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000022014 | LT GAAS//ULTRAHIGH FREQUENCY SEMICOND ELECT//LOW TEMPERATURE GROWN GAAS |
2 | 0.0000019293 | ELECT ENGN OPTOELECT TECHNOL//GAN PHOTOCATHODE//GAAS PHOTOCATHODE |
3 | 0.0000015231 | SCANNING TUNNELING MICROSCOPY//ATOM WI LAYERS//VICINAL SINGLE CRYSTAL SURFACES |
4 | 0.0000014525 | FYS CHEM//INERT SEMICONDUCTOR REDOX ELECTROLYTE//KINETICS OF REDOX REACTIONS |
5 | 0.0000014036 | GAAS ON SI//GAAS SI//GAINP |
6 | 0.0000012474 | ELLIPSOMETRY//MUELLER MATRIX//NANOOPT PROPERTY |
7 | 0.0000012145 | AC SURFACE PHOTOVOLTAGE//ELECTRON WORK FUNCTION//SUPERCONDUCTIVITY MECHANISM |
8 | 0.0000011295 | GAINNAS//DILUTE NITRIDES//ANTIMONIDES |
9 | 0.0000010310 | HFO2//HIGH K//HIGH K DIELECTRICS |
10 | 0.0000010302 | EPITAXIAL AL2O3//METAL INSULATOR HETEROSTRUCTURE//ALKALI HALIDES |