Class information for:
Level 2: ELECT DEVICES MAT TECHNOL//PLASMA ETCHING//SIO2 ETCHING

Basic class information

ID Publications Average number
of references
Avg. shr. active
ref. in WoS
1317 8022 20.7 62%



Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 3)



ID, lev.
above
Publications Label for level above
216 47094 PLASMA SOURCES SCIENCE & TECHNOLOGY//DIELECTRIC BARRIER DISCHARGE//NON THERMAL PLASMA

Classes in level below (level 1)



ID, lev. below Publications Label for level below
1489 2541 ELECT DEVICES MAT TECHNOL//SIO2 ETCHING//PLASMA ETCHING
4273 1740 CHEMICAL DRY ETCHING//PLASMA NANOTECHNOL PLANT//AFTER CORROSION
5395 1562 FUJIMI KU//GAAS OXIDE//REACTIVE ION BEAM ETCHING
11034 948 RUN TO RUN CONTROL//IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING//AUTOMATIC VIRTUAL METROLOGY AVM
16439 588 ATOMIC LAYER ETCHING//GATE CHARGING//NEUTRAL BEAM ETCHING
23845 278 INFLUENCE REGULARITY//SF6 DECOMPOSITION PRODUCTS//BY PRODUCT MONITORING
24102 271 INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING//TI HARD MASK//CL 2 BASED PLASMA
33323 94 ELECTROLYTIC COPPER ADDITION//BCL3 PLASMA//FIS CHIM SUPERFICI INTER E

Terms with highest relevance score



Rank Term Type of term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 ELECT DEVICES MAT TECHNOL Address 140 94% 1% 49
2 PLASMA ETCHING Author keyword 74 29% 3% 219
3 SIO2 ETCHING Author keyword 48 77% 0% 33
4 RUN TO RUN CONTROL Author keyword 40 52% 1% 55
5 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING Journal 36 15% 3% 224
6 REACTIVE ION ETCHING Author keyword 27 19% 2% 132
7 DRY ETCHING Author keyword 27 21% 1% 113
8 CHARGING DAMAGE Author keyword 25 71% 0% 20
9 ELECTRON SHADING Author keyword 24 91% 0% 10
10 RIE LAG Author keyword 22 60% 0% 24

Web of Science journal categories

Author Key Words



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
LCSH search Wikipedia search
1 PLASMA ETCHING 74 29% 3% 219 Search PLASMA+ETCHING Search PLASMA+ETCHING
2 SIO2 ETCHING 48 77% 0% 33 Search SIO2+ETCHING Search SIO2+ETCHING
3 RUN TO RUN CONTROL 40 52% 1% 55 Search RUN+TO+RUN+CONTROL Search RUN+TO+RUN+CONTROL
4 REACTIVE ION ETCHING 27 19% 2% 132 Search REACTIVE+ION+ETCHING Search REACTIVE+ION+ETCHING
5 DRY ETCHING 27 21% 1% 113 Search DRY+ETCHING Search DRY+ETCHING
6 CHARGING DAMAGE 25 71% 0% 20 Search CHARGING+DAMAGE Search CHARGING+DAMAGE
7 ELECTRON SHADING 24 91% 0% 10 Search ELECTRON+SHADING Search ELECTRON+SHADING
8 RIE LAG 22 60% 0% 24 Search RIE+LAG Search RIE+LAG
9 ETCH MECHANISM 21 78% 0% 14 Search ETCH+MECHANISM Search ETCH+MECHANISM
10 AUTOMATIC VIRTUAL METROLOGY AVM 18 89% 0% 8 Search AUTOMATIC+VIRTUAL+METROLOGY+AVM Search AUTOMATIC+VIRTUAL+METROLOGY+AVM

Key Words Plus



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 HIGH DENSITY PLASMAS 195 70% 2% 161
2 CL 2 105 50% 2% 153
3 FLUOROCARBON PLASMAS 84 61% 1% 90
4 CYCLOTRON RESONANCE PLASMA 81 34% 2% 198
5 CHAMBER WALLS 79 94% 0% 29
6 HBR CL 2 O 2 73 96% 0% 23
7 SIDEWALL PASSIVATION 72 100% 0% 23
8 CH4 H2 AR 67 87% 0% 33
9 EWMA CONTROLLER 65 84% 0% 36
10 CHF3 59 47% 1% 94

Journals



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 36 15% 3% 224

Reviews



Title Publ. year Cit. Active references % act. ref.
to same field
Plasma etching: Yesterday, today, and tomorrow 2013 53 262 65%
High aspect ratio silicon etch: A review 2010 123 77 75%
Overview of atomic layer etching in the semiconductor industry 2015 2 90 78%
Plasma cryogenic etching of silicon: from the early days to today's advanced technologies 2014 15 97 72%
Pulsed high-density plasmas for advanced dry etching processes 2012 35 105 86%
Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment 2009 71 227 76%
Developments of plasma etching technology for fabricating semiconductor devices 2008 96 86 73%
SURFACE SCIENCE ASPECTS OF ETCHING REACTIONS 1992 324 164 85%
The grand challenges of plasma etching: a manufacturing perspective 2014 6 16 69%
Pulsed plasma etching for semiconductor manufacturing 2014 7 116 57%

Address terms



Rank Address term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 ELECT DEVICES MAT TECHNOL 140 94% 0.6% 49
2 FUJIMI KU 17 100% 0.1% 8
3 TECHNOL MICROELECT 13 26% 0.5% 44
4 LSI BASIC 11 69% 0.1% 9
5 PLASMA SUR E INTERACT 9 67% 0.1% 8
6 MAT MACHINERY GRP 8 100% 0.1% 5
7 PLASMA IND PLICAT 7 67% 0.1% 6
8 ELECT MFG CONTROL SYST 6 80% 0.0% 4
9 ENVIRONM BENIGN ETCHING TECHNOL 6 80% 0.0% 4
10 SI SYST S 6 100% 0.0% 4

Related classes at same level (level 2)



Rank Relatedness score Related classes
1 0.0000028737 PLASMA SOURCES SCIENCE & TECHNOLOGY//PLASMA DISPLAY PANEL PDP//PLASMA DISPLAY PANEL
2 0.0000012499 PHOTORESIST REMOVAL//WET OZONE//HYDROGEN TERMINATION
3 0.0000010744 PLASMA POLYMERIZATION//PLASMA PROCESSES AND POLYMERS//LOW K
4 0.0000010604 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B//MICROELECTRONIC ENGINEERING//JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY
5 0.0000009379 INTERFACIAL SHEARS//MICROBENDING LOSS//RAPID THERMAL PROCESSING RTP
6 0.0000009219 LASER MICRO CLADDING//FREEFORM FABRICAT S//DIMETHYLALUMINUM HYDRIDE
7 0.0000008905 HIPIMS//HPPMS//HIGH POWER IMPULSE MAGNETRON SPUTTERING
8 0.0000008241 GALLIUM ARSENIDE//SULFUR PASSIVATION//INDIUM ARSENIDE
9 0.0000007445 DIFFUSION BARRIER//ELECTROMIGRATION//CU METALLIZATION
10 0.0000007050 INTERFACIAL SILICON EMISSION//SILICON OXIDATION//GENIE URBAIN ENVIRONM