Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
1317 | 8022 | 20.7 | 62% |
Classes in level above (level 3) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
216 | 47094 | PLASMA SOURCES SCIENCE & TECHNOLOGY//DIELECTRIC BARRIER DISCHARGE//NON THERMAL PLASMA |
Classes in level below (level 1) |
ID, lev. below | Publications | Label for level below |
---|---|---|
1489 | 2541 | ELECT DEVICES MAT TECHNOL//SIO2 ETCHING//PLASMA ETCHING |
4273 | 1740 | CHEMICAL DRY ETCHING//PLASMA NANOTECHNOL PLANT//AFTER CORROSION |
5395 | 1562 | FUJIMI KU//GAAS OXIDE//REACTIVE ION BEAM ETCHING |
11034 | 948 | RUN TO RUN CONTROL//IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING//AUTOMATIC VIRTUAL METROLOGY AVM |
16439 | 588 | ATOMIC LAYER ETCHING//GATE CHARGING//NEUTRAL BEAM ETCHING |
23845 | 278 | INFLUENCE REGULARITY//SF6 DECOMPOSITION PRODUCTS//BY PRODUCT MONITORING |
24102 | 271 | INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING//TI HARD MASK//CL 2 BASED PLASMA |
33323 | 94 | ELECTROLYTIC COPPER ADDITION//BCL3 PLASMA//FIS CHIM SUPERFICI INTER E |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | ELECT DEVICES MAT TECHNOL | Address | 140 | 94% | 1% | 49 |
2 | PLASMA ETCHING | Author keyword | 74 | 29% | 3% | 219 |
3 | SIO2 ETCHING | Author keyword | 48 | 77% | 0% | 33 |
4 | RUN TO RUN CONTROL | Author keyword | 40 | 52% | 1% | 55 |
5 | IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | Journal | 36 | 15% | 3% | 224 |
6 | REACTIVE ION ETCHING | Author keyword | 27 | 19% | 2% | 132 |
7 | DRY ETCHING | Author keyword | 27 | 21% | 1% | 113 |
8 | CHARGING DAMAGE | Author keyword | 25 | 71% | 0% | 20 |
9 | ELECTRON SHADING | Author keyword | 24 | 91% | 0% | 10 |
10 | RIE LAG | Author keyword | 22 | 60% | 0% | 24 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | PLASMA ETCHING | 74 | 29% | 3% | 219 | Search PLASMA+ETCHING | Search PLASMA+ETCHING |
2 | SIO2 ETCHING | 48 | 77% | 0% | 33 | Search SIO2+ETCHING | Search SIO2+ETCHING |
3 | RUN TO RUN CONTROL | 40 | 52% | 1% | 55 | Search RUN+TO+RUN+CONTROL | Search RUN+TO+RUN+CONTROL |
4 | REACTIVE ION ETCHING | 27 | 19% | 2% | 132 | Search REACTIVE+ION+ETCHING | Search REACTIVE+ION+ETCHING |
5 | DRY ETCHING | 27 | 21% | 1% | 113 | Search DRY+ETCHING | Search DRY+ETCHING |
6 | CHARGING DAMAGE | 25 | 71% | 0% | 20 | Search CHARGING+DAMAGE | Search CHARGING+DAMAGE |
7 | ELECTRON SHADING | 24 | 91% | 0% | 10 | Search ELECTRON+SHADING | Search ELECTRON+SHADING |
8 | RIE LAG | 22 | 60% | 0% | 24 | Search RIE+LAG | Search RIE+LAG |
9 | ETCH MECHANISM | 21 | 78% | 0% | 14 | Search ETCH+MECHANISM | Search ETCH+MECHANISM |
10 | AUTOMATIC VIRTUAL METROLOGY AVM | 18 | 89% | 0% | 8 | Search AUTOMATIC+VIRTUAL+METROLOGY+AVM | Search AUTOMATIC+VIRTUAL+METROLOGY+AVM |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | HIGH DENSITY PLASMAS | 195 | 70% | 2% | 161 |
2 | CL 2 | 105 | 50% | 2% | 153 |
3 | FLUOROCARBON PLASMAS | 84 | 61% | 1% | 90 |
4 | CYCLOTRON RESONANCE PLASMA | 81 | 34% | 2% | 198 |
5 | CHAMBER WALLS | 79 | 94% | 0% | 29 |
6 | HBR CL 2 O 2 | 73 | 96% | 0% | 23 |
7 | SIDEWALL PASSIVATION | 72 | 100% | 0% | 23 |
8 | CH4 H2 AR | 67 | 87% | 0% | 33 |
9 | EWMA CONTROLLER | 65 | 84% | 0% | 36 |
10 | CHF3 | 59 | 47% | 1% | 94 |
Journals |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 36 | 15% | 3% | 224 |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Plasma etching: Yesterday, today, and tomorrow | 2013 | 53 | 262 | 65% |
High aspect ratio silicon etch: A review | 2010 | 123 | 77 | 75% |
Overview of atomic layer etching in the semiconductor industry | 2015 | 2 | 90 | 78% |
Plasma cryogenic etching of silicon: from the early days to today's advanced technologies | 2014 | 15 | 97 | 72% |
Pulsed high-density plasmas for advanced dry etching processes | 2012 | 35 | 105 | 86% |
Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment | 2009 | 71 | 227 | 76% |
Developments of plasma etching technology for fabricating semiconductor devices | 2008 | 96 | 86 | 73% |
SURFACE SCIENCE ASPECTS OF ETCHING REACTIONS | 1992 | 324 | 164 | 85% |
The grand challenges of plasma etching: a manufacturing perspective | 2014 | 6 | 16 | 69% |
Pulsed plasma etching for semiconductor manufacturing | 2014 | 7 | 116 | 57% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ELECT DEVICES MAT TECHNOL | 140 | 94% | 0.6% | 49 |
2 | FUJIMI KU | 17 | 100% | 0.1% | 8 |
3 | TECHNOL MICROELECT | 13 | 26% | 0.5% | 44 |
4 | LSI BASIC | 11 | 69% | 0.1% | 9 |
5 | PLASMA SUR E INTERACT | 9 | 67% | 0.1% | 8 |
6 | MAT MACHINERY GRP | 8 | 100% | 0.1% | 5 |
7 | PLASMA IND PLICAT | 7 | 67% | 0.1% | 6 |
8 | ELECT MFG CONTROL SYST | 6 | 80% | 0.0% | 4 |
9 | ENVIRONM BENIGN ETCHING TECHNOL | 6 | 80% | 0.0% | 4 |
10 | SI SYST S | 6 | 100% | 0.0% | 4 |
Related classes at same level (level 2) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000028737 | PLASMA SOURCES SCIENCE & TECHNOLOGY//PLASMA DISPLAY PANEL PDP//PLASMA DISPLAY PANEL |
2 | 0.0000012499 | PHOTORESIST REMOVAL//WET OZONE//HYDROGEN TERMINATION |
3 | 0.0000010744 | PLASMA POLYMERIZATION//PLASMA PROCESSES AND POLYMERS//LOW K |
4 | 0.0000010604 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B//MICROELECTRONIC ENGINEERING//JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY |
5 | 0.0000009379 | INTERFACIAL SHEARS//MICROBENDING LOSS//RAPID THERMAL PROCESSING RTP |
6 | 0.0000009219 | LASER MICRO CLADDING//FREEFORM FABRICAT S//DIMETHYLALUMINUM HYDRIDE |
7 | 0.0000008905 | HIPIMS//HPPMS//HIGH POWER IMPULSE MAGNETRON SPUTTERING |
8 | 0.0000008241 | GALLIUM ARSENIDE//SULFUR PASSIVATION//INDIUM ARSENIDE |
9 | 0.0000007445 | DIFFUSION BARRIER//ELECTROMIGRATION//CU METALLIZATION |
10 | 0.0000007050 | INTERFACIAL SILICON EMISSION//SILICON OXIDATION//GENIE URBAIN ENVIRONM |