Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
1243 | 8515 | 19.3 | 72% |
Classes in level above (level 3) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
87 | 77161 | SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//JOURNAL OF CRYSTAL GROWTH |
Classes in level below (level 1) |
ID, lev. below | Publications | Label for level below |
---|---|---|
891 | 2896 | GAINNAS//DILUTE NITRIDES//GANAS |
5266 | 1581 | ADV MAT PHOTON GRP//MICROPHOTON BRANCH//ANTIMONIDE BASED LASERS |
6327 | 1433 | INAS GASB//INFRARED SENSORS//QUANTUM DEVICES |
9382 | 1092 | GASB//GALLIUM ANTIMONIDE//GAINASSB |
11925 | 880 | SEMICOND PHYS NANOSTRUCT//MELT EPITAXY//INSB |
18875 | 466 | GAASBI//BISMIDES//DILUTE BISMIDES |
28533 | 167 | AL SB//ALSB//BILAYER MIXING |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | GAINNAS | Author keyword | 137 | 58% | 2% | 158 |
2 | DILUTE NITRIDES | Author keyword | 96 | 64% | 1% | 95 |
3 | ANTIMONIDES | Author keyword | 91 | 44% | 2% | 155 |
4 | GANAS | Author keyword | 63 | 70% | 1% | 53 |
5 | GAASN | Author keyword | 60 | 64% | 1% | 58 |
6 | GASB | Author keyword | 42 | 29% | 1% | 124 |
7 | SEMICONDUCTING III V MATERIALS | Author keyword | 42 | 15% | 3% | 259 |
8 | INGAASN | Author keyword | 40 | 53% | 1% | 53 |
9 | GAASBI | Author keyword | 40 | 82% | 0% | 23 |
10 | SOLID STATE PHOTON | Address | 35 | 34% | 1% | 85 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GAINNAS | 137 | 58% | 2% | 158 | Search GAINNAS | Search GAINNAS |
2 | DILUTE NITRIDES | 96 | 64% | 1% | 95 | Search DILUTE+NITRIDES | Search DILUTE+NITRIDES |
3 | ANTIMONIDES | 91 | 44% | 2% | 155 | Search ANTIMONIDES | Search ANTIMONIDES |
4 | GANAS | 63 | 70% | 1% | 53 | Search GANAS | Search GANAS |
5 | GAASN | 60 | 64% | 1% | 58 | Search GAASN | Search GAASN |
6 | GASB | 42 | 29% | 1% | 124 | Search GASB | Search GASB |
7 | SEMICONDUCTING III V MATERIALS | 42 | 15% | 3% | 259 | Search SEMICONDUCTING+III+V+MATERIALS | Search SEMICONDUCTING+III+V+MATERIALS |
8 | INGAASN | 40 | 53% | 1% | 53 | Search INGAASN | Search INGAASN |
9 | GAASBI | 40 | 82% | 0% | 23 | Search GAASBI | Search GAASBI |
10 | GAINASSB | 25 | 50% | 0% | 36 | Search GAINASSB | Search GAINASSB |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | GAINNAS | 731 | 74% | 6% | 547 |
2 | GAASN | 348 | 84% | 2% | 193 |
3 | GANXAS1 X | 284 | 85% | 2% | 147 |
4 | GAAS1 XBIX | 244 | 87% | 1% | 120 |
5 | GAAS1 XNX | 233 | 81% | 2% | 139 |
6 | GASB | 178 | 40% | 4% | 350 |
7 | GAINNAS ALLOYS | 172 | 87% | 1% | 83 |
8 | GAINASN | 160 | 87% | 1% | 79 |
9 | GAASN ALLOYS | 154 | 84% | 1% | 84 |
10 | GALLIUM ANTIMONIDE | 152 | 64% | 2% | 149 |
Journals |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | IEE PROCEEDINGS-OPTOELECTRONICS | 20 | 15% | 1% | 124 |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Band parameters for III-V compound semiconductors and their alloys | 2001 | 2940 | 744 | 25% |
Trends in the electronic structure of dilute nitride alloys | 2009 | 46 | 50 | 96% |
Theory of electronic structure evolution in GaAsN and GaPN alloys | 2001 | 285 | 87 | 75% |
Antimonide-based compound semiconductors for electronic devices: A review | 2005 | 182 | 141 | 42% |
Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications | 2007 | 24 | 84 | 98% |
GALLIUM ANTIMONIDE DEVICE RELATED PROPERTIES | 1993 | 152 | 95 | 63% |
Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi | 2014 | 2 | 17 | 100% |
Passivation techniques for InAs/GaSb strained layer superlattice detectors | 2013 | 8 | 70 | 59% |
The metal-organic chemical vapor deposition and properties of III-V antimony-based semiconductor materials | 2002 | 62 | 194 | 78% |
Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions | 2004 | 29 | 61 | 82% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SOLID STATE PHOTON | 35 | 34% | 1.0% | 85 |
2 | QUANTUM DEVICES | 21 | 23% | 0.9% | 80 |
3 | UMR 5214 | 19 | 27% | 0.7% | 61 |
4 | RWCP OPT INTERCONNECT HITACHI | 19 | 76% | 0.2% | 13 |
5 | ADV MAT PHOTON GRP | 17 | 75% | 0.1% | 12 |
6 | HIGH TECHNOL MAT | 15 | 13% | 1.3% | 112 |
7 | SEMICOND PHYS NANOSTRUCT | 15 | 47% | 0.3% | 23 |
8 | INFRARED SENSORS | 15 | 88% | 0.1% | 7 |
9 | REED PHOTON | 14 | 39% | 0.3% | 29 |
10 | GEN ELECT DEV | 12 | 86% | 0.1% | 6 |
Related classes at same level (level 2) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000016876 | GAAS ON SI//GAAS SI//GAINP |
2 | 0.0000014773 | HGCDTE//CERDEC NIGHT VIS ELECT SENSORS DIRECTORATE//MICROPHYS |
3 | 0.0000012616 | QUANTUM DOTS//QUANTUM DOT//INAS QUANTUM DOTS |
4 | 0.0000012385 | NOVOSHAKHTINSK BRANCH//ELE OCHEM HYDROGEN ENERGY//AMORPHOUS III V SEMICONDUCTORS |
5 | 0.0000011475 | QUANTUM CASCADE LASERS//QUANTUM CASCADE LASER//QUANTUM CASCADE LASERS QCLS |
6 | 0.0000011318 | ENERGIA SOLAR//LUMINESCENT SOLAR CONCENTRATORS//INTERMEDIATE BAND |
7 | 0.0000011295 | GALLIUM ARSENIDE//SULFUR PASSIVATION//INDIUM ARSENIDE |
8 | 0.0000010390 | SUPERLATTICES AND MICROSTRUCTURES//HYDROGENIC IMPURITY//QUANTUM WELL WIRES |
9 | 0.0000009370 | SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//IEEE PHOTONICS TECHNOLOGY LETTERS |
10 | 0.0000008822 | BGAAS//REGIONAL DENSITY FUNCTIONAL THEORY//HIGH P SURE GRP |