Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
1001 | 9900 | 18.6 | 66% |
Classes in level above (level 3) |
Classes in level below (level 1) |
ID, lev. below | Publications | Label for level below |
---|---|---|
1617 | 2484 | MICROPIPE//SUBLIMATION GROWTH//MICROPIPES |
1832 | 2395 | 4H SIC//SILICON CARBIDE SIC//BIPOLAR JUNCTION TRANSISTORS BJTS |
4447 | 1710 | LEHRSTUHL THEOR FESTKORPERPHYS//SEMI INSULATING SIC//TEMPERATURE DEPENDENCE OF MAJORITY CARRIER CONCENTRATION |
6069 | 1467 | 3C SIC//FG NANOTECHNOL//HOLLOW VOID |
13696 | 756 | OHMIC CONTACT//OHMIC CONTACTS//P TYPE SIC |
15299 | 650 | SIMA//HEXAGONAL SURFACES//DSMDRECAMSPCSI |
22079 | 338 | 4H SIC MESFET//MESFET//MESFETS |
32944 | 100 | IN FRANTZEVICH PROBLEMS MAT SCI//GROWTH TECHNIQUES//SEMICOND HETEROSTRUCT |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | SILICON CARBIDE | Author keyword | 344 | 24% | 13% | 1256 |
2 | 4H SIC | Author keyword | 265 | 47% | 4% | 423 |
3 | SIC | Author keyword | 159 | 19% | 8% | 744 |
4 | 6H SIC | Author keyword | 103 | 47% | 2% | 161 |
5 | SILICON CARBIDE SIC | Author keyword | 100 | 43% | 2% | 179 |
6 | 3C SIC | Author keyword | 91 | 40% | 2% | 176 |
7 | PHYS MEASUREMENT TECHNOL | Address | 82 | 22% | 3% | 337 |
8 | ADV POWER DEVICE | Address | 81 | 96% | 0% | 25 |
9 | MICROPIPE | Author keyword | 72 | 69% | 1% | 61 |
10 | SUBLIMATION GROWTH | Author keyword | 70 | 64% | 1% | 68 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SILICON CARBIDE | 344 | 24% | 13% | 1256 | Search SILICON+CARBIDE | Search SILICON+CARBIDE |
2 | 4H SIC | 265 | 47% | 4% | 423 | Search 4H+SIC | Search 4H+SIC |
3 | SIC | 159 | 19% | 8% | 744 | Search SIC | Search SIC |
4 | 6H SIC | 103 | 47% | 2% | 161 | Search 6H+SIC | Search 6H+SIC |
5 | SILICON CARBIDE SIC | 100 | 43% | 2% | 179 | Search SILICON+CARBIDE+SIC | Search SILICON+CARBIDE+SIC |
6 | 3C SIC | 91 | 40% | 2% | 176 | Search 3C+SIC | Search 3C+SIC |
7 | MICROPIPE | 72 | 69% | 1% | 61 | Search MICROPIPE | Search MICROPIPE |
8 | SUBLIMATION GROWTH | 70 | 64% | 1% | 68 | Search SUBLIMATION+GROWTH | Search SUBLIMATION+GROWTH |
9 | MICROPIPES | 69 | 77% | 0% | 47 | Search MICROPIPES | Search MICROPIPES |
10 | SEMICONDUCTING SILICON COMPOUNDS | 60 | 49% | 1% | 90 | Search SEMICONDUCTING+SILICON+COMPOUNDS | Search SEMICONDUCTING+SILICON+COMPOUNDS |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SILICON CARBIDE | 544 | 26% | 19% | 1837 |
2 | 4 H | 296 | 61% | 3% | 311 |
3 | 6H | 229 | 70% | 2% | 188 |
4 | 6H SILICON CARBIDE | 131 | 79% | 1% | 85 |
5 | 4H SILICON CARBIDE | 125 | 71% | 1% | 101 |
6 | BETA SIC100 SURFACE | 116 | 83% | 1% | 65 |
7 | SUBLIMATION GROWTH | 116 | 62% | 1% | 120 |
8 | SIC POLYTYPES | 104 | 54% | 1% | 134 |
9 | CHANNEL MOBILITY | 85 | 65% | 1% | 82 |
10 | SIC SIO2 INTERFACE | 76 | 81% | 0% | 46 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review | 1996 | 525 | 143 | 78% |
Degradation of hexagonal silicon-carbide-based bipolar devices | 2006 | 158 | 119 | 84% |
3C-SiC Heteroepitaxial Growth on Silicon: The Quest for Holy Grail | 2015 | 1 | 111 | 86% |
Prospects for SiC electronics and sensors | 2008 | 68 | 53 | 81% |
Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications | 2012 | 21 | 133 | 88% |
Deep level centers in silicon carbide: A review | 1999 | 149 | 83 | 93% |
Step-controlled epitaxial growth of SiC: high quality homoepitaxy | 1997 | 277 | 97 | 92% |
Technological breakthroughs in growth control of silicon carbide for high power electronic devices | 2004 | 60 | 64 | 100% |
Heterojunctions and superlattices based on silicon carbide | 2006 | 66 | 85 | 85% |
Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties | 2003 | 108 | 254 | 67% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | PHYS MEASUREMENT TECHNOL | 82 | 22% | 3.4% | 337 |
2 | ADV POWER DEVICE | 81 | 96% | 0.3% | 25 |
3 | ULTRA LOW LOSS POWER DEVICE TECHNOL BODY | 57 | 95% | 0.2% | 19 |
4 | ADV POWER DEVICES | 27 | 92% | 0.1% | 11 |
5 | FG NANOTECHNOL | 27 | 71% | 0.2% | 22 |
6 | UPR ULTRA LOW LOSS POWER DEVICE TECHNOL BODY | 26 | 100% | 0.1% | 11 |
7 | MAT SCI 6 | 26 | 38% | 0.6% | 55 |
8 | ETUD SEMICOND GRP | 25 | 21% | 1.1% | 109 |
9 | RD ASSOC FUTURE ELE ON DEVICES | 23 | 55% | 0.3% | 29 |
10 | NEW BRUNSWICK TECHNOL | 21 | 85% | 0.1% | 11 |
Related classes at same level (level 2) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000009817 | NANOELECT GIGASCALE SYST//ELECTROSTATIC DISCHARGE ESD//SILICON CONTROLLED RECTIFIER SCR |
2 | 0.0000009184 | HIGH CURRENT ELECT//LINEAR TRANSFORMER DRIVER//GAS SWITCH |
3 | 0.0000008620 | JOURNAL OF NUCLEAR MATERIALS//URANIUM DIOXIDE//DEC |
4 | 0.0000007400 | SIALON//SI3N4//SILICON NITRIDE |
5 | 0.0000005944 | GAN//NITRIDES//GALLIUM NITRIDE |
6 | 0.0000005898 | HYDROGEN SENSOR//S SENCE//HYDROGEN SENSORS |
7 | 0.0000005230 | SCANNING TUNNELING MICROSCOPY//ATOM WI LAYERS//VICINAL SINGLE CRYSTAL SURFACES |
8 | 0.0000005006 | INTERFACIAL SHEARS//MICROBENDING LOSS//RAPID THERMAL PROCESSING RTP |
9 | 0.0000004895 | BETA FESI2//SILICIDE//SILICIDES |
10 | 0.0000004801 | CARBON CARBON COMPOSITES//C C COMPOSITES//CHEMICAL VAPOR INFILTRATION |