Class information for:
Level 1: LT GAAS//LOW TEMPERATURE GROWN GAAS//LOW TEMPERATURE GAAS

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
9876 1048 17.6 77%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
1771 5849 LT GAAS//ULTRAHIGH FREQUENCY SEMICOND ELECT//LOW TEMPERATURE GROWN GAAS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 LT GAAS Author keyword 38 58% 4% 44
2 LOW TEMPERATURE GROWN GAAS Author keyword 26 56% 3% 32
3 LOW TEMPERATURE GAAS Author keyword 15 62% 2% 16
4 ARSENIC PRECIPITATES Author keyword 11 100% 1% 6
5 LOW TEMPERATURE MOLECULAR BEAM EPITAXY Author keyword 9 83% 0% 5
6 W GAAS Author keyword 6 80% 0% 4
7 ASYMMETRIC FABRY PEROT DEVICES Author keyword 6 100% 0% 4
8 LOW TEMPERATURE MBE GROWTH Author keyword 6 100% 0% 4
9 MRSEC TECHNOL ENABLING HETEROSTRUCT MAT Address 5 63% 0% 5
10 AS PRECIPITATE Author keyword 4 75% 0% 3

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 LT GAAS 38 58% 4% 44 Search LT+GAAS Search LT+GAAS
2 LOW TEMPERATURE GROWN GAAS 26 56% 3% 32 Search LOW+TEMPERATURE+GROWN+GAAS Search LOW+TEMPERATURE+GROWN+GAAS
3 LOW TEMPERATURE GAAS 15 62% 2% 16 Search LOW+TEMPERATURE+GAAS Search LOW+TEMPERATURE+GAAS
4 ARSENIC PRECIPITATES 11 100% 1% 6 Search ARSENIC+PRECIPITATES Search ARSENIC+PRECIPITATES
5 LOW TEMPERATURE MOLECULAR BEAM EPITAXY 9 83% 0% 5 Search LOW+TEMPERATURE+MOLECULAR+BEAM+EPITAXY Search LOW+TEMPERATURE+MOLECULAR+BEAM+EPITAXY
6 W GAAS 6 80% 0% 4 Search W+GAAS Search W+GAAS
7 ASYMMETRIC FABRY PEROT DEVICES 6 100% 0% 4 Search ASYMMETRIC+FABRY+PEROT+DEVICES Search ASYMMETRIC+FABRY+PEROT+DEVICES
8 LOW TEMPERATURE MBE GROWTH 6 100% 0% 4 Search LOW+TEMPERATURE+MBE+GROWTH Search LOW+TEMPERATURE+MBE+GROWTH
9 AS PRECIPITATE 4 75% 0% 3 Search AS+PRECIPITATE Search AS+PRECIPITATE
10 EL3 4 75% 0% 3 Search EL3 Search EL3

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 BEAM EPITAXIAL GAAS 32 57% 4% 38
2 LOW SUBSTRATE TEMPERATURES 25 47% 4% 39
3 AS RICH GAAS 15 88% 1% 7
4 TEMPERATURE GROWN GAAS 13 15% 7% 77
5 200 DEGREES C 11 26% 3% 35
6 LT GAAS 9 64% 1% 9
7 THERMAL LIMITATIONS 8 100% 0% 5
8 GROWN GAAS 7 26% 2% 24
9 SUBPICOSECOND CARRIER LIFETIMES 7 64% 1% 7
10 EL2 LIKE DEFECT 6 80% 0% 4

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
LOW-TEMPERATURE-GROWN III-V MATERIALS 1995 77 92 78%
Molecular beam epitaxy of nonstoichiometric semiconductors and multiphase material systems 1996 39 114 61%
SEMICONDUCTOR MATERIALS FOR ULTRAFAST OPTOELECTRONIC APPLICATIONS 2009 1 48 35%
Nanometer-size atomic clusters in semiconductors - a new approach to tailoring material properties 1998 15 14 29%
Doping of high concentration of Beryllium in GaAs layers, by molecular-beam epitaxy 2010 1 11 27%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 MRSEC TECHNOL ENABLING HETEROSTRUCT MAT 5 63% 0.5% 5
2 IT COMPONENTS MAT TECHNOL 1 38% 0.3% 3
3 NSF MRSEC TECHNOL ENABLING HETEROSTRUCT MAT 1 50% 0.2% 2
4 FOTON CNRS 1 50% 0.1% 1
5 HYDERFREQUENCES CARACTERISAT 1 50% 0.1% 1
6 NORTEL ADV COMPONENTS 1 50% 0.1% 1
7 NORTEL TELECOMMUN 1 50% 0.1% 1
8 STATE OPTOELECT MAT TECH 1 50% 0.1% 1
9 UMRS CNRS 8520 1 50% 0.1% 1
10 MICROCHARACTERIZAT 1 20% 0.3% 3

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000143694 ULTRASHORT PULSED BEAM//INTRACAVITY STRUCTURES//SPECTRAL HOLOGRAPHY
2 0.0000116590 ROTATION MAGNETIZATION//ELECTRO OPTIC SAMPLING//ELECTROOPTIC PROBING
3 0.0000105147 HIGH POWER PHOTODIODE//HIGH POWER PHOTODIODES//UNITRAVELING CARRIER PHOTODIODE UTC PD
4 0.0000099852 ERSB//INP111A//DYAS
5 0.0000086150 GAASBI//BISMIDES//DILUTE BISMIDES
6 0.0000085142 PHOTOCONDUCTIVE ANTENNA//OPTICAL RECTIFICATION//ADV LASER LIGHT SOURCE
7 0.0000073288 MAGNET SENSOR//GROUP III V EXCEPT NITRIDES//COPPER VACANCY COMPLEX
8 0.0000072762 EL2//CARBON ACCEPTOR//SEMI INSULATING GALLIUM ARSENIDE
9 0.0000070638 DRAIN CURRENT TRANSIENT//FUNCT ELEMENTS CONTROL SYST//GATE LAG
10 0.0000070118 LOCAL VIBRATION MODES//DIRECT FAST SCARLET 4BS//GAAS C