Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
9764 | 1057 | 20.7 | 71% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | STRAINED SI1 XGEX SI QUANTUM WELLS | Author keyword | 6 | 100% | 0% | 4 |
2 | SI SIGE SUPERLATTICE | Author keyword | 2 | 67% | 0% | 2 |
3 | STRAINED SIGE SI | Author keyword | 2 | 67% | 0% | 2 |
4 | BAND STRUCTURE ENGINEERING | Author keyword | 2 | 27% | 1% | 6 |
5 | SEGREGANT ASSISTED GROWTH | Author keyword | 1 | 100% | 0% | 2 |
6 | SI1 XGEX SI | Author keyword | 1 | 50% | 0% | 2 |
7 | VOLTAGE CONTROLLED EMISSION WAVELENGTH SWITCH | Author keyword | 1 | 100% | 0% | 2 |
8 | UNITE PHYS SOLIDES | Address | 1 | 20% | 0% | 5 |
9 | SI BASED NANOSTRUCTURES | Author keyword | 1 | 40% | 0% | 2 |
10 | SI GE INTERFACE | Author keyword | 1 | 40% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SI GE SUPERLATTICES | 40 | 42% | 7% | 74 |
2 | BAND GAP PHOTOLUMINESCENCE | 37 | 57% | 4% | 44 |
3 | GE SI SUPERLATTICES | 34 | 68% | 3% | 30 |
4 | GAP PHOTOLUMINESCENCE | 17 | 70% | 1% | 14 |
5 | STRAINED LAYER SUPERLATTICES | 13 | 14% | 8% | 88 |
6 | SI GE ALLOYS | 12 | 41% | 2% | 23 |
7 | PERIOD SI GE SUPERLATTICES | 11 | 100% | 1% | 6 |
8 | BAND EDGE PHOTOLUMINESCENCE | 10 | 30% | 3% | 28 |
9 | GE SUPERLATTICES | 9 | 83% | 0% | 5 |
10 | LAYER SUPERLATTICES | 9 | 19% | 4% | 42 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
ULTRATHIN SIMGEN STRAINED LAYER SUPERLATTICES - A STEP TOWARDS SI OPTOELECTRONICS | 1992 | 119 | 32 | 56% |
Vibrational properties of Si/Ge superlattices | 1997 | 12 | 65 | 78% |
Band gaps and light emission in Si/SiGe atomic layer structures | 1998 | 10 | 87 | 70% |
Light emission in silicon | 1998 | 13 | 92 | 33% |
SILICON-GERMANIUM ALLOYS AND HETEROSTRUCTURES - OPTICAL AND ELECTRONIC-PROPERTIES | 1989 | 103 | 51 | 53% |
Optical properties | 1999 | 2 | 82 | 68% |
A REVIEW OF THEORETICAL AND EXPERIMENTAL WORK ON THE STRUCTURE OF GEXSI1-X STRAINED LAYERS AND SUPERLATTICES, WITH EXTENSIVE BIBLIOGRAPHY | 1990 | 109 | 273 | 32% |
GROUP-IV COMPOUNDS | 1991 | 51 | 92 | 30% |
INFLUENCE OF ANNEALING ON THE INTERFACE STRUCTURE AND STRAIN RELIEF IN SI/GE HETEROSTRUCTURES ON (100) SI | 1993 | 2 | 53 | 70% |
Growth techniques and procedures | 1999 | 3 | 85 | 25% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | UNITE PHYS SOLIDES | 1 | 20% | 0.5% | 5 |
2 | ERS 0136 | 1 | 50% | 0.1% | 1 |
3 | HIGH TECHNOL NEW BUSINESS SYST DEV GRP | 1 | 50% | 0.1% | 1 |
4 | MAT CONDENSEE NANOSCI LMCN | 1 | 50% | 0.1% | 1 |
5 | SPECT SOLIDE | 1 | 50% | 0.1% | 1 |
6 | CNRS UPR 7251 | 0 | 33% | 0.1% | 1 |
7 | IES CEM2 | 0 | 33% | 0.1% | 1 |
8 | INFM FORUM | 0 | 33% | 0.1% | 1 |
9 | ISI IT | 0 | 33% | 0.1% | 1 |
10 | MICROELECT TECHNOL HIGHLY PURE MAT | 0 | 33% | 0.1% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000205548 | STRAINED SI//SIGE//STRAINED SILICON |
2 | 0.0000162451 | GE ISLANDS//SIGE ISLANDS//HUT CLUSTERS |
3 | 0.0000156814 | SI1 YCY//SI1 X YGEXCY//SICGE |
4 | 0.0000123452 | LATERAL CRYSTALLINE GROWTH//ACCELERATORS//ION INDUCED DEFECTS |
5 | 0.0000096945 | GESN//L NESS//GERMANIUM TIN |
6 | 0.0000096540 | MISFIT DISLOCATIONS//GRADED BUFFER LAYER//DISLOCATION COMPENSATION |
7 | 0.0000094745 | HYDROGEN SURFACTANT//AUSTRALIAN COUNCIL EXCELLENCE QUANTUM COM//EXCELLENCE QUANTUM COMPUTAT COMMUN TECHNOL |
8 | 0.0000093539 | AVERAGE BOND ENERGY THEORY//PHYS IND PHYS//PH ECUBLENS PHYS PL |
9 | 0.0000086114 | CLUSTER OF DEFECTS//GROUP II ELEMENTS//SI CD |
10 | 0.0000084011 | NEGATIVE EFFECTIVE MASS//GAASP QUANTUM WELLS//III V SEMICONDUCTOR HETEROJUNCTIONS |