Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
9675 | 1066 | 18.4 | 35% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1700 | 6150 | HETEROJUNCTION BIPOLAR TRANSISTORS//HETEROJUNCTION BIPOLAR TRANSISTORS HBTS//HETEROJUNCTION BIPOLAR TRANSISTOR HBT |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | OPEN CIRCUIT VOLTAGE DECAY OCVD | Author keyword | 4 | 75% | 0% | 3 |
2 | APPARENT BAND GAP NARROWING | Author keyword | 1 | 100% | 0% | 2 |
3 | EQUIVALENT DIAGRAM | Author keyword | 1 | 100% | 0% | 2 |
4 | ERG FORI SICRI | Address | 1 | 100% | 0% | 2 |
5 | MICROWAVE TRANSIENT PHOTOCONDUCTIVITY | Author keyword | 1 | 100% | 0% | 2 |
6 | CARRIER RECOMBINATION CENTERS | Author keyword | 1 | 50% | 0% | 1 |
7 | CARRIER TRANSPORT MODELING | Author keyword | 1 | 50% | 0% | 1 |
8 | CELL TECHNOL PROC ENGN | Address | 1 | 50% | 0% | 1 |
9 | COMPARISON OF PROPERTIES | Author keyword | 1 | 50% | 0% | 1 |
10 | CRITICAL DOSE RATE | Author keyword | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | MINORITY CARRIER TRANSPORT | 6 | 26% | 2% | 18 |
2 | HEAVILY DOPED SILICON | 5 | 20% | 2% | 20 |
3 | CIRCUIT VOLTAGE DECAY | 2 | 28% | 1% | 7 |
4 | ELECTRICAL CURRENT | 2 | 22% | 1% | 9 |
5 | SI P BI | 2 | 67% | 0% | 2 |
6 | SYSTEMATIC ANALYTICAL SOLUTIONS | 2 | 36% | 0% | 4 |
7 | DEPENDENT BAND STRUCTURE | 1 | 100% | 0% | 2 |
8 | EHRENFEST DERIVATION | 1 | 100% | 0% | 2 |
9 | EMITTER RECOMBINATIONS | 1 | 100% | 0% | 2 |
10 | SI EPILAYERS | 1 | 100% | 0% | 2 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
REVIEW OF ANALYTICAL MODELS FOR THE STUDY OF HIGHLY DOPED REGIONS OF SILICON DEVICES | 1989 | 30 | 12 | 100% |
Photovoltaic phenomena in inhomogeneous semiconductors | 2003 | 4 | 5 | 100% |
THEORY OF BAND TAILS IN HEAVILY DOPED SEMICONDUCTORS | 1992 | 59 | 42 | 26% |
Optimal design and manufacture of silicon solar cells for industrial production. State of the art of research in Mexico | 2004 | 0 | 12 | 67% |
BANDGAP NARROWING AND ITS EFFECTS ON THE PROPERTIES OF MODERATELY AND HEAVILY-DOPED GERMANIUM AND SILICON | 1991 | 6 | 70 | 90% |
RECENT ADVANCES IN THE PHYSICS OF SILICON P-N-JUNCTION SOLAR-CELLS INCLUDING THEIR TRANSIENT-RESPONSE | 1987 | 12 | 34 | 68% |
OPEN-CIRCUIT VOLTAGE DECAY IN SOLAR-CELLS | 1986 | 4 | 21 | 95% |
EFFECTS OF HEAVY DOPING AND HIGH-EXCITATION ON THE BAND-STRUCTURE OF GALLIUM-ARSENIDE | 1993 | 3 | 73 | 27% |
SILICON PHOTO-VOLTAIC CELLS | 1981 | 80 | 21 | 71% |
ELECTRON-DENSITY OF STATES IN DISORDERED-SYSTEMS | 1980 | 0 | 1 | 100% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ERG FORI SICRI | 1 | 100% | 0.2% | 2 |
2 | CELL TECHNOL PROC ENGN | 1 | 50% | 0.1% | 1 |
3 | ENGN STUDIES TECHNOL | 1 | 50% | 0.1% | 1 |
4 | ETUDE DEV MAT SEMICOND DIELECT | 1 | 50% | 0.1% | 1 |
5 | QUANTUM PHENOMENON PLICAT | 1 | 29% | 0.2% | 2 |
6 | PHYS DISPOSITIFS SEMICOND | 0 | 33% | 0.1% | 1 |
7 | PHYS FB 6 | 0 | 33% | 0.1% | 1 |
8 | PHYS SUN SCI PROD ASSOC | 0 | 33% | 0.1% | 1 |
9 | PHOTOVOLTA OPTOELECT | 0 | 18% | 0.2% | 2 |
10 | NANO MICROELECT ENGN | 0 | 25% | 0.1% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000137585 | POST IMPLANTATION DEFECTS//MULTI INTERFACE SOLAR CELL//PLANAR NANOSTRUCTURE |
2 | 0.0000135474 | A AMA MICROELECT SCI TECHNOL//SIGEHBT//SIGE HBT |
3 | 0.0000133559 | FERMI DIRAC INTEGRAL//MAGNETIC QUANTIZATION//EXPERIMENTAL SUGGESTION |
4 | 0.0000132965 | IEEE JOURNAL OF PHOTOVOLTAICS//SILICON SOLAR CELLS//PROGRESS IN PHOTOVOLTAICS |
5 | 0.0000131593 | DIFFUSION TEMPERATURE//DEVICE FUNCT SECT//TWO DIMENSIONAL DEVICE SIMULATION |
6 | 0.0000098468 | PASSIVATED CONTACT//POLYSILICON EMITTER//CLOCK ACCESS TIME |
7 | 0.0000096015 | PHOTON RECYCLING//SEMICONDUCTOR SCINTILLATORS//FSF |
8 | 0.0000095241 | POLYSILICON RESISTORS//HEAVILY DOPED POLYSILICON RESISTOR//LPCVD SI LAYERS |
9 | 0.0000086417 | PHYS INTER ES//ELECT SOLIDE//AZO CALIX4ARENE |
10 | 0.0000084892 | CNRS UP A 8008//TWO DIMENSION ELECTRON GAS//DETONATION DIAMOND |