Class information for:
Level 1: OPEN CIRCUIT VOLTAGE DECAY OCVD//APPARENT BAND GAP NARROWING//EQUIVALENT DIAGRAM

Basic class information

ID Publications Average number
of references
Avg. shr. active
ref. in WoS
9675 1066 18.4 35%



Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)



ID, lev.
above
Publications Label for level above
1700 6150 HETEROJUNCTION BIPOLAR TRANSISTORS//HETEROJUNCTION BIPOLAR TRANSISTORS HBTS//HETEROJUNCTION BIPOLAR TRANSISTOR HBT

Terms with highest relevance score



Rank Term Type of term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ.
in class
1 OPEN CIRCUIT VOLTAGE DECAY OCVD Author keyword 4 75% 0% 3
2 APPARENT BAND GAP NARROWING Author keyword 1 100% 0% 2
3 EQUIVALENT DIAGRAM Author keyword 1 100% 0% 2
4 ERG FORI SICRI Address 1 100% 0% 2
5 MICROWAVE TRANSIENT PHOTOCONDUCTIVITY Author keyword 1 100% 0% 2
6 CARRIER RECOMBINATION CENTERS Author keyword 1 50% 0% 1
7 CARRIER TRANSPORT MODELING Author keyword 1 50% 0% 1
8 CELL TECHNOL PROC ENGN Address 1 50% 0% 1
9 COMPARISON OF PROPERTIES Author keyword 1 50% 0% 1
10 CRITICAL DOSE RATE Author keyword 1 50% 0% 1

Web of Science journal categories

Author Key Words



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ.
in class
LCSH search Wikipedia search
1 OPEN CIRCUIT VOLTAGE DECAY OCVD 4 75% 0% 3 Search OPEN+CIRCUIT+VOLTAGE+DECAY+OCVD Search OPEN+CIRCUIT+VOLTAGE+DECAY+OCVD
2 APPARENT BAND GAP NARROWING 1 100% 0% 2 Search APPARENT+BAND+GAP+NARROWING Search APPARENT+BAND+GAP+NARROWING
3 EQUIVALENT DIAGRAM 1 100% 0% 2 Search EQUIVALENT+DIAGRAM Search EQUIVALENT+DIAGRAM
4 MICROWAVE TRANSIENT PHOTOCONDUCTIVITY 1 100% 0% 2 Search MICROWAVE+TRANSIENT+PHOTOCONDUCTIVITY Search MICROWAVE+TRANSIENT+PHOTOCONDUCTIVITY
5 CARRIER RECOMBINATION CENTERS 1 50% 0% 1 Search CARRIER+RECOMBINATION+CENTERS Search CARRIER+RECOMBINATION+CENTERS
6 CARRIER TRANSPORT MODELING 1 50% 0% 1 Search CARRIER+TRANSPORT+MODELING Search CARRIER+TRANSPORT+MODELING
7 COMPARISON OF PROPERTIES 1 50% 0% 1 Search COMPARISON+OF+PROPERTIES Search COMPARISON+OF+PROPERTIES
8 CRITICAL DOSE RATE 1 50% 0% 1 Search CRITICAL+DOSE+RATE Search CRITICAL+DOSE+RATE
9 DENSITY OF STATES EFFECTIVE MASS 1 50% 0% 1 Search DENSITY+OF+STATES+EFFECTIVE+MASS Search DENSITY+OF+STATES+EFFECTIVE+MASS
10 DOPANT SOURCES 1 50% 0% 1 Search DOPANT+SOURCES Search DOPANT+SOURCES

Key Words Plus



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 MINORITY CARRIER TRANSPORT 6 26% 2% 18
2 HEAVILY DOPED SILICON 5 20% 2% 20
3 CIRCUIT VOLTAGE DECAY 2 28% 1% 7
4 ELECTRICAL CURRENT 2 22% 1% 9
5 SI P BI 2 67% 0% 2
6 SYSTEMATIC ANALYTICAL SOLUTIONS 2 36% 0% 4
7 DEPENDENT BAND STRUCTURE 1 100% 0% 2
8 EHRENFEST DERIVATION 1 100% 0% 2
9 EMITTER RECOMBINATIONS 1 100% 0% 2
10 SI EPILAYERS 1 100% 0% 2

Journals

Reviews



Title Publ. year Cit. Active
references
% act. ref.
to same field
REVIEW OF ANALYTICAL MODELS FOR THE STUDY OF HIGHLY DOPED REGIONS OF SILICON DEVICES 1989 30 12 100%
Photovoltaic phenomena in inhomogeneous semiconductors 2003 4 5 100%
THEORY OF BAND TAILS IN HEAVILY DOPED SEMICONDUCTORS 1992 59 42 26%
Optimal design and manufacture of silicon solar cells for industrial production. State of the art of research in Mexico 2004 0 12 67%
BANDGAP NARROWING AND ITS EFFECTS ON THE PROPERTIES OF MODERATELY AND HEAVILY-DOPED GERMANIUM AND SILICON 1991 6 70 90%
RECENT ADVANCES IN THE PHYSICS OF SILICON P-N-JUNCTION SOLAR-CELLS INCLUDING THEIR TRANSIENT-RESPONSE 1987 12 34 68%
OPEN-CIRCUIT VOLTAGE DECAY IN SOLAR-CELLS 1986 4 21 95%
EFFECTS OF HEAVY DOPING AND HIGH-EXCITATION ON THE BAND-STRUCTURE OF GALLIUM-ARSENIDE 1993 3 73 27%
SILICON PHOTO-VOLTAIC CELLS 1981 80 21 71%
ELECTRON-DENSITY OF STATES IN DISORDERED-SYSTEMS 1980 0 1 100%

Address terms



Rank Address term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ.
in class
1 ERG FORI SICRI 1 100% 0.2% 2
2 CELL TECHNOL PROC ENGN 1 50% 0.1% 1
3 ENGN STUDIES TECHNOL 1 50% 0.1% 1
4 ETUDE DEV MAT SEMICOND DIELECT 1 50% 0.1% 1
5 QUANTUM PHENOMENON PLICAT 1 29% 0.2% 2
6 PHYS DISPOSITIFS SEMICOND 0 33% 0.1% 1
7 PHYS FB 6 0 33% 0.1% 1
8 PHYS SUN SCI PROD ASSOC 0 33% 0.1% 1
9 PHOTOVOLTA OPTOELECT 0 18% 0.2% 2
10 NANO MICROELECT ENGN 0 25% 0.1% 1

Related classes at same level (level 1)



Rank Relatedness score Related classes
1 0.0000137585 POST IMPLANTATION DEFECTS//MULTI INTERFACE SOLAR CELL//PLANAR NANOSTRUCTURE
2 0.0000135474 A AMA MICROELECT SCI TECHNOL//SIGEHBT//SIGE HBT
3 0.0000133559 FERMI DIRAC INTEGRAL//MAGNETIC QUANTIZATION//EXPERIMENTAL SUGGESTION
4 0.0000132965 IEEE JOURNAL OF PHOTOVOLTAICS//SILICON SOLAR CELLS//PROGRESS IN PHOTOVOLTAICS
5 0.0000131593 DIFFUSION TEMPERATURE//DEVICE FUNCT SECT//TWO DIMENSIONAL DEVICE SIMULATION
6 0.0000098468 PASSIVATED CONTACT//POLYSILICON EMITTER//CLOCK ACCESS TIME
7 0.0000096015 PHOTON RECYCLING//SEMICONDUCTOR SCINTILLATORS//FSF
8 0.0000095241 POLYSILICON RESISTORS//HEAVILY DOPED POLYSILICON RESISTOR//LPCVD SI LAYERS
9 0.0000086417 PHYS INTER ES//ELECT SOLIDE//AZO CALIX4ARENE
10 0.0000084892 CNRS UP A 8008//TWO DIMENSION ELECTRON GAS//DETONATION DIAMOND