Class information for:
Level 1: A AMA MICROELECT SCI TECHNOL//SIGEHBT//SIGE HBT

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
9671 1066 16.8 50%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
1700 6150 HETEROJUNCTION BIPOLAR TRANSISTORS//HETEROJUNCTION BIPOLAR TRANSISTORS HBTS//HETEROJUNCTION BIPOLAR TRANSISTOR HBT

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 A AMA MICROELECT SCI TECHNOL Address 28 44% 4% 47
2 SIGEHBT Author keyword 20 33% 5% 51
3 SIGE HBT Author keyword 13 28% 4% 40
4 SIGE HETEROJUNCTION BIPOLAR TRANSISTORS HBTS Author keyword 13 80% 1% 8
5 BASE TRANSIT TIME Author keyword 13 69% 1% 11
6 MIXED MODE STRESS Author keyword 10 73% 1% 8
7 SIGEHBTS Author keyword 8 44% 1% 14
8 SILICON GERMANIUM SIGE Author keyword 8 21% 3% 33
9 NEUTRAL BASE RECOMBINATION Author keyword 6 80% 0% 4
10 PROTON TOLERANCE Author keyword 6 80% 0% 4

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 SIGEHBT 20 33% 5% 51 Search SIGEHBT Search SIGEHBT
2 SIGE HBT 13 28% 4% 40 Search SIGE+HBT Search SIGE+HBT
3 SIGE HETEROJUNCTION BIPOLAR TRANSISTORS HBTS 13 80% 1% 8 Search SIGE+HETEROJUNCTION+BIPOLAR+TRANSISTORS+HBTS Search SIGE+HETEROJUNCTION+BIPOLAR+TRANSISTORS+HBTS
4 BASE TRANSIT TIME 13 69% 1% 11 Search BASE+TRANSIT+TIME Search BASE+TRANSIT+TIME
5 MIXED MODE STRESS 10 73% 1% 8 Search MIXED+MODE+STRESS Search MIXED+MODE+STRESS
6 SIGEHBTS 8 44% 1% 14 Search SIGEHBTS Search SIGEHBTS
7 SILICON GERMANIUM SIGE 8 21% 3% 33 Search SILICON+GERMANIUM+SIGE Search SILICON+GERMANIUM+SIGE
8 NEUTRAL BASE RECOMBINATION 6 80% 0% 4 Search NEUTRAL+BASE+RECOMBINATION Search NEUTRAL+BASE+RECOMBINATION
9 PROTON TOLERANCE 6 80% 0% 4 Search PROTON+TOLERANCE Search PROTON+TOLERANCE
10 SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR SIGE HBT 6 71% 0% 5 Search SILICON+GERMANIUM+HETEROJUNCTION+BIPOLAR+TRANSISTOR+SIGE+HBT Search SILICON+GERMANIUM+HETEROJUNCTION+BIPOLAR+TRANSISTOR+SIGE+HBT

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 77 K APPLICATIONS 44 88% 2% 21
2 CHARGE CONTROL RELATION 35 89% 2% 16
3 BIPOLAR TRANSISTORS 24 17% 12% 125
4 PROFILE DESIGN 21 69% 2% 18
5 COLLECTOR BASE JUNCTION 11 78% 1% 7
6 QUASI NEUTRAL LAYERS 11 78% 1% 7
7 RHBD TECHNIQUES 11 78% 1% 7
8 DEEP TRENCH ISOLATION 9 83% 0% 5
9 BASE BIPOLAR TECHNOLOGY 8 70% 1% 7
10 STATIC MODELS 8 75% 1% 6

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
SiGe HBT technology: A new contender for Si-based RF and microwave circuit applications 1998 197 40 50%
Scaling of SiGe heterojunction bipolar transistors 2005 31 29 34%
SiGe HBT for application in BiCMOS technology: II. Design, technology and performance 2001 20 29 45%
Methods for Determining the Emitter Resistance in SiGe HBTs: A Review and an Evaluation Across Technology Generations 2015 0 16 69%
Noise behavior in SiGe devices 2001 14 19 37%
A review of radiation effects in heterojunction bipolar transistors 2005 0 32 53%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 A AMA MICROELECT SCI TECHNOL 28 44% 4.4% 47
2 ELE ON DEVICES INTEGRATED CIRCUITS 1 100% 0.2% 2
3 PHYS THIN FILMS MAT ELECT LPCMME 1 100% 0.2% 2
4 SMMC 1 100% 0.2% 2
5 MICROELECT SEMICOND DEV 1 40% 0.2% 2
6 INSA LYONCNRS 1 50% 0.1% 1
7 MICROWAVE COMPONENT GRP 1 50% 0.1% 1
8 RF DEV 1 50% 0.1% 1
9 SEMICOND DEVICE TECHNOL 1 50% 0.1% 1
10 STEVENSON 5635 1 50% 0.1% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000262300 PASSIVATED CONTACT//POLYSILICON EMITTER//CLOCK ACCESS TIME
2 0.0000201095 HETEROJUNCTION BIPOLAR TRANSISTORS//HETEROJUNCTION BIPOLAR TRANSISTOR//HBT
3 0.0000172375 HORIZONTAL CURRENT BIPOLAR TRANSISTOR HCBT//DYNAMIC THRESHOLD MOSFET DTMOS//LATERAL BIPOLAR TRANSISTOR
4 0.0000135474 OPEN CIRCUIT VOLTAGE DECAY OCVD//APPARENT BAND GAP NARROWING//EQUIVALENT DIAGRAM
5 0.0000090137 DECISION CIRCUITS//DEMULTIPLEXING EQUIPMENT//MIKROELEKT ZENTRUM A
6 0.0000089403 STRAINED SI//SIGE//STRAINED SILICON
7 0.0000072853 NONQUASI STATIC NQS EFFECT//QUCS//RSCE
8 0.0000059506 CARL EMILY FUCHS MICROELECT//CEFIM//EUROPEAN QUAL
9 0.0000058508 ULTRAVIOLET LIGHT DETECTORS//ORIENTATION OF MOLECULES//BORON CHEMICAL VAPOR DEPOSITION
10 0.0000053339 OXIDE TRAPPED CHARGE//ELDRS//TOTAL IONIZING DOSE