Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
9665 | 1066 | 22.9 | 73% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1597 | 6577 | ELLIPSOMETRY//MUELLER MATRIX//NANOOPT PROPERTY |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | SURFACE PHOTOABSORPTION | Author keyword | 26 | 80% | 2% | 16 |
2 | REFLECTANCE ANISOTROPY SPECTROSCOPY | Author keyword | 20 | 49% | 3% | 29 |
3 | REFLECTION ANISOTROPY SPECTROSCOPY | Author keyword | 14 | 64% | 1% | 14 |
4 | REFLECTANCE ANISOTROPY SPECTROSCOPY RAS | Author keyword | 11 | 78% | 1% | 7 |
5 | REFLECTANCE DIFFERENCE SPECTROSCOPY | Author keyword | 10 | 41% | 2% | 20 |
6 | REFLECTANCE DIFFERENCE SPECTROSCOPY RDS | Author keyword | 6 | 80% | 0% | 4 |
7 | S K GROWTH | Author keyword | 4 | 75% | 0% | 3 |
8 | INVEST COMUNICAC OPT | Address | 3 | 15% | 2% | 21 |
9 | LASER REFLECTOMETRY | Author keyword | 3 | 35% | 1% | 8 |
10 | MONOLAYER OSCILLATION | Author keyword | 3 | 100% | 0% | 3 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | 001 GAAS | 79 | 50% | 11% | 114 |
2 | REFLECTANCE DIFFERENCE SPECTROSCOPY | 74 | 52% | 9% | 101 |
3 | BANDGAP OPTICAL ANISOTROPIES | 33 | 100% | 1% | 13 |
4 | ANISOTROPY SPECTROSCOPY | 29 | 52% | 4% | 40 |
5 | REFLECTION ANISOTROPY SPECTROSCOPY | 19 | 55% | 2% | 24 |
6 | CUBIC SEMICONDUCTORS | 18 | 36% | 4% | 42 |
7 | OPTICAL ANISOTROPIES | 18 | 46% | 3% | 29 |
8 | INDUCED OPTICAL ANISOTROPIES | 18 | 89% | 1% | 8 |
9 | DIFFERENCE SPECTROSCOPY | 16 | 17% | 8% | 90 |
10 | 001 GAAS SURFACES | 15 | 68% | 1% | 13 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Reflection anisotropy spectroscopy | 2005 | 195 | 301 | 55% |
Characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopy and ellipsometry | 1997 | 70 | 72 | 60% |
Stress-induced optical anisotropies measured by modulated reflectance | 2004 | 9 | 44 | 80% |
Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces | 1998 | 38 | 64 | 50% |
Real-time optical characterization of thin film growth | 2001 | 9 | 43 | 74% |
Polarizable dipole models for reflectance anisotropy spectroscopy: a review | 2004 | 8 | 61 | 54% |
Real-time diagnostics for metalorganic vapor phase epitaxy | 2005 | 4 | 4 | 75% |
Calculation of reflectance anisotropy for semiconductor surface exploration | 2005 | 10 | 72 | 49% |
PHASE-MODULATED ELLIPSOMETRY FROM THE ULTRAVIOLET TO THE INFRARED - IN-SITU APPLICATION TO THE GROWTH OF SEMICONDUCTORS | 1993 | 90 | 90 | 21% |
Optical diagnostics for thin film processing | 2003 | 6 | 268 | 16% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | INVEST COMUNICAC OPT | 3 | 15% | 2.0% | 21 |
2 | OPTOELE ON MAT | 2 | 67% | 0.2% | 2 |
3 | IRC SUR E SCI | 1 | 19% | 0.7% | 7 |
4 | CHRISTIAN DOPPLER OBERFLACHENOPT | 1 | 100% | 0.2% | 2 |
5 | HALBLEITERPHYS FESTKORPERPHYS | 1 | 50% | 0.2% | 2 |
6 | SCI TECHNOL CHEMPOB 88SACKVILLE ST | 1 | 100% | 0.2% | 2 |
7 | UMR CNRS 7601 | 1 | 27% | 0.4% | 4 |
8 | UNITE RECH HETEROEPITAXIES PLICAT | 1 | 16% | 0.6% | 6 |
9 | SEKR PN 6 1 | 1 | 40% | 0.2% | 2 |
10 | FBH | 1 | 33% | 0.2% | 2 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000237378 | ELECTRON COUNTING MODEL//SUR E STUDY//GA ADATOM |
2 | 0.0000189408 | MEASUREMENT ENGN SENSOR TECHNOL//PHYS TECHNOL LOW DIMENS STRUCT//PLANAR MICROCAVITIES |
3 | 0.0000186928 | OBLIQUE INCIDENCE REFLECTIVITY DIFFERENCE//OBLIQUE INCIDENCE REFLECTIVITY DIFFERENCE OIRD//OBLIQUE INCIDENCE REFLECTIVITY DIFFERENCE OI RD |
4 | 0.0000143014 | NANOOPT PROPERTY//PLASMA PHYS PLASMA SOURCES//NON UNIFORM THIN FILMS |
5 | 0.0000111393 | ULYANOVSK BRANCH//BREIT OPERATOR//LIGHT INTENSITY FLUCTUATIONS |
6 | 0.0000106672 | HIGH RESOLUTION LOW ENERGY ELECTRON DIFFRACTION//GAAS GAP//SURFACE RESONANCES |
7 | 0.0000096374 | ACOUSTIC SURFACE PLASMON//SURFACE PLASMON DISPERSION//SURFACE PLASMON LIFETIME |
8 | 0.0000093931 | SHG MICROSCOPE//2ND HARMONIC GENERATION//AC LEON |
9 | 0.0000092440 | TRIMETHYLINDIUM//CHEMICAL BEAM EPITAXY CBE//MOLECULAR LAYER EPITAXY |
10 | 0.0000088166 | IMAGING ELLIPSOMETRY//TOTAL INTERNAL REFLECTION ELLIPSOMETRY//ROTATING POLARIZER ANALYZER ELLIPSOMETER |