Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
9654 | 1067 | 16.3 | 41% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1342 | 7876 | EDGE DEFINED FILM FED GROWTH//MULTICRYSTALLINE SILICON//PROGRESS IN PHOTOVOLTAICS |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | ELECTRON BEAM INDUCED CURRENT | Author keyword | 13 | 37% | 3% | 28 |
2 | ELECTRON BEAM APPLICATION | Author keyword | 4 | 75% | 0% | 3 |
3 | SEMICONDUCTOR MATERIAL MEASUREMENTS | Author keyword | 3 | 57% | 0% | 4 |
4 | EBIC | Author keyword | 3 | 12% | 2% | 26 |
5 | DEAD LAYER THICKNESS | Author keyword | 2 | 67% | 0% | 2 |
6 | MICROELECT TECHNOL PROBLEM | Address | 2 | 67% | 0% | 2 |
7 | RELATIVE QUANTUM EFFICIENCY | Author keyword | 2 | 67% | 0% | 2 |
8 | SCANNING DLTS | Author keyword | 2 | 67% | 0% | 2 |
9 | SEMICONDUCTOR MATERIALS MEASUREMENTS | Author keyword | 1 | 25% | 0% | 5 |
10 | ELECTRON BEAM APPLICATIONS | Author keyword | 1 | 21% | 1% | 6 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | EBIC CONTRAST | 19 | 76% | 1% | 13 |
2 | BEAM INDUCED CURRENT | 14 | 23% | 5% | 51 |
3 | CHARGE COLLECTION IMAGES | 12 | 75% | 1% | 9 |
4 | DEFORMED SILICON CRYSTALS | 8 | 100% | 0% | 5 |
5 | EXTENDED GENERATION PROFILE | 8 | 100% | 0% | 5 |
6 | INDUCED CURRENT PROFILES | 8 | 100% | 0% | 5 |
7 | LINE SCAN | 8 | 62% | 1% | 8 |
8 | CARRIER DIFFUSION LENGTH | 7 | 31% | 2% | 18 |
9 | CHARGE COLLECTION CONTRAST | 6 | 100% | 0% | 4 |
10 | DEPLETION REGION WIDTH | 6 | 100% | 0% | 4 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
ELECTRON-BEAM INDUCED CURRENT INVESTIGATIONS OF ELECTRICAL INHOMOGENEITIES WITH HIGH SPATIAL-RESOLUTION | 1992 | 20 | 47 | 81% |
RECOVERY OF SEMICONDUCTOR AND DEFECT PROPERTIES FROM CHARGE-COLLECTION MEASUREMENTS | 1988 | 16 | 24 | 92% |
CHARGE COLLECTION SCANNING ELECTRON-MICROSCOPY | 1982 | 480 | 4 | 100% |
THEORY OF ELECTRON-BEAM INDUCED CURRENT AND CATHODOLUMINESCENCE CONTRASTS FROM STRUCTURAL DEFECTS OF SEMICONDUCTOR CRYSTALS - STEADY-STATE AND TIME-RESOLVED PROBLEMS | 1987 | 14 | 54 | 89% |
CATHODOLUMINESCENCE SCANNING MICROSCOPY | 1992 | 18 | 47 | 47% |
CATHODOLUMINESCENCE SCANNING ELECTRON-MICROSCOPY OF SEMICONDUCTORS | 1986 | 140 | 69 | 23% |
Modulation methods in scanning electron microscopy (review) | 1998 | 1 | 34 | 100% |
Cathodoluminescence microscopy | 1996 | 4 | 19 | 47% |
PHOTOVOLTAIC MEASUREMENTS | 1985 | 36 | 14 | 43% |
SILICON INGOT CASTING BY GAS ASSISTED SOLIDIFICATION | 1988 | 0 | 1 | 100% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | MICROELECT TECHNOL PROBLEM | 2 | 67% | 0.2% | 2 |
2 | IST CHIM TECNOL MAT COMPONENTI ELETTRON | 1 | 50% | 0.2% | 2 |
3 | LAMACOP SFAX | 1 | 50% | 0.2% | 2 |
4 | PHYS CHEM STUDIES MAT LEPCM | 1 | 100% | 0.2% | 2 |
5 | PHYS RADIAT THEIR INTERACT MATTER PRIMA | 1 | 100% | 0.2% | 2 |
6 | SPACE MAT SCI | 1 | 18% | 0.7% | 7 |
7 | KALUGA BRANCH | 1 | 13% | 0.7% | 8 |
8 | MICROELECT HIGHLY PURE MAT TECHNOL PROBLEM | 1 | 27% | 0.3% | 3 |
9 | IPTM | 1 | 50% | 0.1% | 1 |
10 | RECH NANOSCI EA4682 | 1 | 50% | 0.1% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000204521 | BANDLIKE STATES//DISLOCATION ENGINEERED//RECOMBINATION STRENGTH |
2 | 0.0000153646 | PHOTON RECYCLING//SEMICONDUCTOR SCINTILLATORS//FSF |
3 | 0.0000112591 | POLYSILICON RESISTORS//HEAVILY DOPED POLYSILICON RESISTOR//LPCVD SI LAYERS |
4 | 0.0000096127 | METALLURGICAL GRADE SILICON//SOLAR GRADE SILICON//MULTICRYSTALLINE SILICON |
5 | 0.0000090387 | SURFACE AND INTERFACE PHENOMENA//TELECOMMUN ADVANCEMENTS ORG//SENDAI |
6 | 0.0000071553 | BETA TIN STRUCTURE//CATHODOLUMINESENCE//ELECTRICAL HARDNESS |
7 | 0.0000066721 | MEAN PENETRATION DEPTH//CONTINUOUS SLOWING DOWN APPROXIMATION//DOPANT CONTRAST |
8 | 0.0000062845 | TIN PEST//ALLOTROPIC TRANSITION//STRUCTURAL INTEGRITY IN ELECTRONICS |
9 | 0.0000059197 | SECT PHYS PL//KHERSON BRANCH//CARRIERS CAPTURE |
10 | 0.0000057896 | GETTERING//GETTERING EFFICIENCY//SI AU |