Class information for:
Level 1: ELECTRON BEAM INDUCED CURRENT//ELECTRON BEAM APPLICATION//SEMICONDUCTOR MATERIAL MEASUREMENTS

Basic class information

ID Publications Average number
of references
Avg. shr. active
ref. in WoS
9654 1067 16.3 41%



Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)



ID, lev.
above
Publications Label for level above
1342 7876 EDGE DEFINED FILM FED GROWTH//MULTICRYSTALLINE SILICON//PROGRESS IN PHOTOVOLTAICS

Terms with highest relevance score



Rank Term Type of term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 ELECTRON BEAM INDUCED CURRENT Author keyword 13 37% 3% 28
2 ELECTRON BEAM APPLICATION Author keyword 4 75% 0% 3
3 SEMICONDUCTOR MATERIAL MEASUREMENTS Author keyword 3 57% 0% 4
4 EBIC Author keyword 3 12% 2% 26
5 DEAD LAYER THICKNESS Author keyword 2 67% 0% 2
6 MICROELECT TECHNOL PROBLEM Address 2 67% 0% 2
7 RELATIVE QUANTUM EFFICIENCY Author keyword 2 67% 0% 2
8 SCANNING DLTS Author keyword 2 67% 0% 2
9 SEMICONDUCTOR MATERIALS MEASUREMENTS Author keyword 1 25% 0% 5
10 ELECTRON BEAM APPLICATIONS Author keyword 1 21% 1% 6

Web of Science journal categories

Author Key Words



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
LCSH search Wikipedia search
1 ELECTRON BEAM INDUCED CURRENT 13 37% 3% 28 Search ELECTRON+BEAM+INDUCED+CURRENT Search ELECTRON+BEAM+INDUCED+CURRENT
2 ELECTRON BEAM APPLICATION 4 75% 0% 3 Search ELECTRON+BEAM+APPLICATION Search ELECTRON+BEAM+APPLICATION
3 SEMICONDUCTOR MATERIAL MEASUREMENTS 3 57% 0% 4 Search SEMICONDUCTOR+MATERIAL+MEASUREMENTS Search SEMICONDUCTOR+MATERIAL+MEASUREMENTS
4 EBIC 3 12% 2% 26 Search EBIC Search EBIC
5 DEAD LAYER THICKNESS 2 67% 0% 2 Search DEAD+LAYER+THICKNESS Search DEAD+LAYER+THICKNESS
6 RELATIVE QUANTUM EFFICIENCY 2 67% 0% 2 Search RELATIVE+QUANTUM+EFFICIENCY Search RELATIVE+QUANTUM+EFFICIENCY
7 SCANNING DLTS 2 67% 0% 2 Search SCANNING+DLTS Search SCANNING+DLTS
8 SEMICONDUCTOR MATERIALS MEASUREMENTS 1 25% 0% 5 Search SEMICONDUCTOR+MATERIALS+MEASUREMENTS Search SEMICONDUCTOR+MATERIALS+MEASUREMENTS
9 ELECTRON BEAM APPLICATIONS 1 21% 1% 6 Search ELECTRON+BEAM+APPLICATIONS Search ELECTRON+BEAM+APPLICATIONS
10 MINORITY CARRIERS DIFFUSION LENGTH 1 50% 0% 2 Search MINORITY+CARRIERS+DIFFUSION+LENGTH Search MINORITY+CARRIERS+DIFFUSION+LENGTH

Key Words Plus



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 EBIC CONTRAST 19 76% 1% 13
2 BEAM INDUCED CURRENT 14 23% 5% 51
3 CHARGE COLLECTION IMAGES 12 75% 1% 9
4 DEFORMED SILICON CRYSTALS 8 100% 0% 5
5 EXTENDED GENERATION PROFILE 8 100% 0% 5
6 INDUCED CURRENT PROFILES 8 100% 0% 5
7 LINE SCAN 8 62% 1% 8
8 CARRIER DIFFUSION LENGTH 7 31% 2% 18
9 CHARGE COLLECTION CONTRAST 6 100% 0% 4
10 DEPLETION REGION WIDTH 6 100% 0% 4

Journals

Reviews



Title Publ. year Cit. Active
references
% act. ref.
to same field
ELECTRON-BEAM INDUCED CURRENT INVESTIGATIONS OF ELECTRICAL INHOMOGENEITIES WITH HIGH SPATIAL-RESOLUTION 1992 20 47 81%
RECOVERY OF SEMICONDUCTOR AND DEFECT PROPERTIES FROM CHARGE-COLLECTION MEASUREMENTS 1988 16 24 92%
CHARGE COLLECTION SCANNING ELECTRON-MICROSCOPY 1982 480 4 100%
THEORY OF ELECTRON-BEAM INDUCED CURRENT AND CATHODOLUMINESCENCE CONTRASTS FROM STRUCTURAL DEFECTS OF SEMICONDUCTOR CRYSTALS - STEADY-STATE AND TIME-RESOLVED PROBLEMS 1987 14 54 89%
CATHODOLUMINESCENCE SCANNING MICROSCOPY 1992 18 47 47%
CATHODOLUMINESCENCE SCANNING ELECTRON-MICROSCOPY OF SEMICONDUCTORS 1986 140 69 23%
Modulation methods in scanning electron microscopy (review) 1998 1 34 100%
Cathodoluminescence microscopy 1996 4 19 47%
PHOTOVOLTAIC MEASUREMENTS 1985 36 14 43%
SILICON INGOT CASTING BY GAS ASSISTED SOLIDIFICATION 1988 0 1 100%

Address terms



Rank Address term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ.
in class
1 MICROELECT TECHNOL PROBLEM 2 67% 0.2% 2
2 IST CHIM TECNOL MAT COMPONENTI ELETTRON 1 50% 0.2% 2
3 LAMACOP SFAX 1 50% 0.2% 2
4 PHYS CHEM STUDIES MAT LEPCM 1 100% 0.2% 2
5 PHYS RADIAT THEIR INTERACT MATTER PRIMA 1 100% 0.2% 2
6 SPACE MAT SCI 1 18% 0.7% 7
7 KALUGA BRANCH 1 13% 0.7% 8
8 MICROELECT HIGHLY PURE MAT TECHNOL PROBLEM 1 27% 0.3% 3
9 IPTM 1 50% 0.1% 1
10 RECH NANOSCI EA4682 1 50% 0.1% 1

Related classes at same level (level 1)



Rank Relatedness score Related classes
1 0.0000204521 BANDLIKE STATES//DISLOCATION ENGINEERED//RECOMBINATION STRENGTH
2 0.0000153646 PHOTON RECYCLING//SEMICONDUCTOR SCINTILLATORS//FSF
3 0.0000112591 POLYSILICON RESISTORS//HEAVILY DOPED POLYSILICON RESISTOR//LPCVD SI LAYERS
4 0.0000096127 METALLURGICAL GRADE SILICON//SOLAR GRADE SILICON//MULTICRYSTALLINE SILICON
5 0.0000090387 SURFACE AND INTERFACE PHENOMENA//TELECOMMUN ADVANCEMENTS ORG//SENDAI
6 0.0000071553 BETA TIN STRUCTURE//CATHODOLUMINESENCE//ELECTRICAL HARDNESS
7 0.0000066721 MEAN PENETRATION DEPTH//CONTINUOUS SLOWING DOWN APPROXIMATION//DOPANT CONTRAST
8 0.0000062845 TIN PEST//ALLOTROPIC TRANSITION//STRUCTURAL INTEGRITY IN ELECTRONICS
9 0.0000059197 SECT PHYS PL//KHERSON BRANCH//CARRIERS CAPTURE
10 0.0000057896 GETTERING//GETTERING EFFICIENCY//SI AU