Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 9642 | 1069 | 12.6 | 56% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 740 | 11887 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B//MICROELECTRONIC ENGINEERING//JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | X RAY MASK | Author keyword | 45 | 48% | 6% | 69 |
| 2 | SUPER FINE SR LITHOG | Address | 37 | 100% | 1% | 14 |
| 3 | X RAY LITHOGRAPHY | Author keyword | 27 | 24% | 9% | 98 |
| 4 | SR LITHOGRAPHY | Author keyword | 19 | 64% | 2% | 18 |
| 5 | MICROFABRICAT TECHNOL | Address | 15 | 88% | 1% | 7 |
| 6 | MASK CONTRAST | Author keyword | 14 | 100% | 1% | 7 |
| 7 | X RAY MASK MEMBRANE | Author keyword | 6 | 71% | 0% | 5 |
| 8 | DOSE MARGIN | Author keyword | 5 | 60% | 1% | 6 |
| 9 | TELECOMMUN ENERGY S | Address | 5 | 17% | 3% | 29 |
| 10 | XRAY LITHOG | Address | 5 | 37% | 1% | 10 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | X RAY MASK | 45 | 48% | 6% | 69 | Search X+RAY+MASK | Search X+RAY+MASK |
| 2 | X RAY LITHOGRAPHY | 27 | 24% | 9% | 98 | Search X+RAY+LITHOGRAPHY | Search X+RAY+LITHOGRAPHY |
| 3 | SR LITHOGRAPHY | 19 | 64% | 2% | 18 | Search SR+LITHOGRAPHY | Search SR+LITHOGRAPHY |
| 4 | MASK CONTRAST | 14 | 100% | 1% | 7 | Search MASK+CONTRAST | Search MASK+CONTRAST |
| 5 | X RAY MASK MEMBRANE | 6 | 71% | 0% | 5 | Search X+RAY+MASK+MEMBRANE | Search X+RAY+MASK+MEMBRANE |
| 6 | DOSE MARGIN | 5 | 60% | 1% | 6 | Search DOSE+MARGIN | Search DOSE+MARGIN |
| 7 | LITHOGRAPHY ALIGNMENT | 4 | 75% | 0% | 3 | Search LITHOGRAPHY+ALIGNMENT | Search LITHOGRAPHY+ALIGNMENT |
| 8 | SIC MEMBRANE | 3 | 57% | 0% | 4 | Search SIC+MEMBRANE | Search SIC+MEMBRANE |
| 9 | TA ABSORBER | 3 | 100% | 0% | 3 | Search TA+ABSORBER | Search TA+ABSORBER |
| 10 | SYNCHROTRON RADIATION LITHOGRAPHY | 3 | 42% | 0% | 5 | Search SYNCHROTRON+RADIATION+LITHOGRAPHY | Search SYNCHROTRON+RADIATION+LITHOGRAPHY |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | MOIRE FRINGE | 8 | 70% | 1% | 7 |
| 2 | SR LITHOGRAPHY | 8 | 100% | 0% | 5 |
| 3 | X RAY LITHOGRAPHY | 6 | 11% | 5% | 53 |
| 4 | SYNCHROTRON RADIATION LITHOGRAPHY | 6 | 35% | 1% | 14 |
| 5 | SIC MEMBRANE | 6 | 100% | 0% | 4 |
| 6 | W TI ABSORBER | 6 | 100% | 0% | 4 |
| 7 | X RAY MASKS | 4 | 31% | 1% | 12 |
| 8 | CRITICAL DIMENSION CONTROL | 4 | 67% | 0% | 4 |
| 9 | GROUND RULES | 4 | 75% | 0% | 3 |
| 10 | MASKLESS | 3 | 32% | 1% | 9 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
|---|---|---|---|---|
| X-ray imaging: applications to patterning and lithography | 2000 | 29 | 32 | 72% |
| Positioning technology in X-ray lithography | 1996 | 1 | 14 | 100% |
| AN OVERVIEW OF X-RAY-LITHOGRAPHY FOR USE IN SEMICONDUCTOR-DEVICE PREPARATION | 1991 | 4 | 20 | 70% |
| CONTRAST AMPLIFICATION OF VERY HIGH-RESOLUTION X-RAY MASKS | 1990 | 1 | 7 | 57% |
| CHEMISTRY AND MANUFACTURING REQUIREMENTS OF X-RAY RESISTS | 1991 | 0 | 13 | 54% |
| SENSITIVITY OF POLYMER BLENDS TO SYNCHROTRON RADIATION | 1987 | 0 | 12 | 33% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | SUPER FINE SR LITHOG | 37 | 100% | 1.3% | 14 |
| 2 | MICROFABRICAT TECHNOL | 15 | 88% | 0.7% | 7 |
| 3 | TELECOMMUN ENERGY S | 5 | 17% | 2.7% | 29 |
| 4 | XRAY LITHOG | 5 | 37% | 0.9% | 10 |
| 5 | POSTECH ADV LITHOG | 4 | 67% | 0.4% | 4 |
| 6 | DEV OPERAT SEMICOND PROD | 3 | 100% | 0.3% | 3 |
| 7 | SUPERFINE SR LITHOG | 3 | 100% | 0.3% | 3 |
| 8 | ASSOC SUPER ADV ELECT TECHNOL | 1 | 15% | 0.7% | 8 |
| 9 | QUANTUM EQUIPMENT TECHNOL | 1 | 25% | 0.4% | 4 |
| 10 | NANOTECHNOL ADV SYST S | 1 | 30% | 0.3% | 3 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000197769 | NANOSYST MFG//NANOELECT PROC IL//ION PROJECTION |
| 2 | 0.0000136837 | PHOTOMASK//IC EQUIPMENT//PROXIMITY EFFECT CORRECTION |
| 3 | 0.0000071543 | RESIST SENSITIVITY//MATH CHEM ENGN//RECTIFICATION PROPERTY |
| 4 | 0.0000070570 | BILEVEL STRUCTURE//PLASMA BLANKING//WT ADDITIVITY |
| 5 | 0.0000060598 | COMPACT ELECTRON STORAGE RING//BBU INSTABILITY//BETATRON TUNE SHIFT |
| 6 | 0.0000058627 | BEAM POSITION MONITORS//BMIT//CLOSED ORBIT CORRECTION |
| 7 | 0.0000057999 | SU 8//ZNCL2 NACL KCL//DEVICE TECHNOL GRP |
| 8 | 0.0000055257 | PIN CHUCK//VACUUM PIN CHUCK//WAFER FLATNESS |
| 9 | 0.0000049922 | HYDROGEN SILSESQUIOXANE//HSQ//HSQ RESIST |
| 10 | 0.0000048865 | OPTICAL LITHOGRAPHY//PHASE SHIFTING MASK//BOTTOM ANTIREFLECTIVE COATINGS |