Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 9433 | 1087 | 19.8 | 55% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 372 | 16511 | SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | IBIEC | Author keyword | 12 | 75% | 1% | 9 |
| 2 | SOLID PHASE EPITAXIAL GROWTH | Author keyword | 7 | 43% | 1% | 13 |
| 3 | LATERAL SOLID PHASE EPITAXY | Author keyword | 7 | 64% | 1% | 7 |
| 4 | AMORPHOUS POCKET | Author keyword | 6 | 100% | 0% | 4 |
| 5 | NODUS ACCELERATOR | Address | 6 | 100% | 0% | 4 |
| 6 | ION INDUCED CRYSTALLIZATION | Author keyword | 4 | 75% | 0% | 3 |
| 7 | AMORPHOUS ZONES | Author keyword | 3 | 57% | 0% | 4 |
| 8 | DIFFRACTOMETER OPTIMISATION | Author keyword | 3 | 100% | 0% | 3 |
| 9 | SUB THRESHOLD ELECTRONS | Author keyword | 3 | 100% | 0% | 3 |
| 10 | ION BEAM INDUCED CRYSTALLIZATION | Author keyword | 3 | 50% | 0% | 4 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | INDUCED EPITAXIAL CRYSTALLIZATION | 43 | 69% | 3% | 37 |
| 2 | REGROWTH RATE | 38 | 84% | 2% | 21 |
| 3 | AMORPHOUS SI FILMS | 9 | 59% | 1% | 10 |
| 4 | AMORPHOUS SI LAYERS | 9 | 67% | 1% | 8 |
| 5 | INDUCED EPITAXIAL REGROWTH | 9 | 67% | 1% | 8 |
| 6 | SOLID PHASE EPITAXY | 8 | 17% | 4% | 44 |
| 7 | AMORPHOUS SI | 8 | 20% | 3% | 35 |
| 8 | AMORPHIZED SILICON | 7 | 67% | 1% | 6 |
| 9 | 2 DIMENSIONAL AMORPHIZED SI | 6 | 100% | 0% | 4 |
| 10 | MASK EDGE DEFECTS | 6 | 100% | 0% | 4 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| Ion-beam-induced amorphization and recrystallization in silicon | 2004 | 142 | 155 | 45% |
| Stressed multidirectional solid-phase epitaxial growth of Si | 2009 | 14 | 65 | 63% |
| Ion-Beam-Induced Amorphization and Epitaxial Crystallization of Silicon | 2010 | 3 | 45 | 69% |
| Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon | 2008 | 13 | 73 | 51% |
| FORMATION OF STRAIN-FREE GAAS-ON-SI STRUCTURES BY ANNEALING UNDER ULTRAHIGH PRESSURE | 1995 | 4 | 2 | 100% |
| Topics in solid phase epitaxy: Strain, structure and geometry | 1996 | 12 | 124 | 37% |
| Swift Heavy Ion Beam-induced Recrystallisation of Buried Silicon Nitride Layer | 2009 | 0 | 15 | 60% |
| Doping and processing epitaxial GexSi1-x films on Si(100) by ion implantation for Si-based heterojunction devices applications | 1998 | 5 | 82 | 51% |
| MOLECULAR-BEAM EPITAXY OF SILICON-BASED HETEROSTRUCTURE AND ITS APPLICATION TO NOVEL DEVICES | 1994 | 31 | 49 | 18% |
| IMPLANTED SILICON EPITAXY BY THERMAL AND LASER PROCESSING | 1986 | 0 | 19 | 47% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | NODUS ACCELERATOR | 6 | 100% | 0.4% | 4 |
| 2 | GRMT | 1 | 12% | 0.6% | 7 |
| 3 | ELECT ELECT ENGN INFORMAT TECHNOL MATH | 1 | 50% | 0.1% | 1 |
| 4 | INFM MATIS | 1 | 50% | 0.1% | 1 |
| 5 | TECHNOL PROBLEMS MICROELE HIGHLY PURE M | 1 | 50% | 0.1% | 1 |
| 6 | FESTKORPERELEKTR | 1 | 17% | 0.3% | 3 |
| 7 | UNIDAD AGUASCALIENTES | 1 | 12% | 0.4% | 4 |
| 8 | ATOMIST MAT MODELING GRP | 0 | 33% | 0.1% | 1 |
| 9 | KERN STRALINGSFYS INPAC | 0 | 33% | 0.1% | 1 |
| 10 | MICROSCOPIE ELECT TUNNEL | 0 | 33% | 0.1% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000150898 | TRANSIENT ENHANCED DIFFUSION//SWAMP//PAIR DIFFUSION MODEL |
| 2 | 0.0000143018 | FLUCTUATION ELECTRON MICROSCOPY//FLUCTUATION MICROSCOPY//REDUCED DENSITY FUNCTION |
| 3 | 0.0000131523 | RANGE PARAMETERS//SOFT ERROR MAPPING//HIGH ENERGY ION IMPLANTATION |
| 4 | 0.0000102546 | MEV ION IMPLANTATION//ACTIVATION EFFICIENCY//COLD IMPLANTS |
| 5 | 0.0000090823 | METAL INDUCED CRYSTALLIZATION//SOLID PHASE CRYSTALLIZATION//METAL INDUCED LATERAL CRYSTALLIZATION |
| 6 | 0.0000080589 | AMORPHOUS III V SEMICONDUCTORS//GAAS1 XNX THIN FILMS//SUNAG |
| 7 | 0.0000071964 | LATERAL CRYSTALLINE GROWTH//ACCELERATORS//ION INDUCED DEFECTS |
| 8 | 0.0000071296 | ION CUT//SURFACE BLISTERING//SMART CUT |
| 9 | 0.0000065542 | ELECTRON BEAM ANNEALING//RAFTER//ION BEAM SYNTHESIS IBS |
| 10 | 0.0000065510 | EXCIMER LASER CRYSTALLIZATION//LASER CRYSTALLIZATION//EXCIMER LASER ANNEALING |