Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
9382 | 1092 | 18.9 | 55% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | GASB | Author keyword | 9 | 14% | 5% | 59 |
2 | GALLIUM ANTIMONIDE | Author keyword | 7 | 21% | 3% | 29 |
3 | GAINASSB | Author keyword | 5 | 25% | 2% | 18 |
4 | UNIDAD PUEBLA | Address | 4 | 67% | 0% | 4 |
5 | GAINSB | Author keyword | 4 | 41% | 1% | 7 |
6 | ANTIMONIDES | Author keyword | 4 | 10% | 3% | 35 |
7 | NOVEL MATERIALS AND TECHNOLOGICAL ADVANCES FOR PHOTONICS | Author keyword | 3 | 100% | 0% | 3 |
8 | ELE MONTPELLIER CNRS URA 391 | Address | 2 | 67% | 0% | 2 |
9 | GASB SINGLE CRYSTALS | Author keyword | 2 | 67% | 0% | 2 |
10 | III V ANTIMONIDES | Author keyword | 2 | 67% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GASB | 9 | 14% | 5% | 59 | Search GASB | Search GASB |
2 | GALLIUM ANTIMONIDE | 7 | 21% | 3% | 29 | Search GALLIUM+ANTIMONIDE | Search GALLIUM+ANTIMONIDE |
3 | GAINASSB | 5 | 25% | 2% | 18 | Search GAINASSB | Search GAINASSB |
4 | GAINSB | 4 | 41% | 1% | 7 | Search GAINSB | Search GAINSB |
5 | ANTIMONIDES | 4 | 10% | 3% | 35 | Search ANTIMONIDES | Search ANTIMONIDES |
6 | NOVEL MATERIALS AND TECHNOLOGICAL ADVANCES FOR PHOTONICS | 3 | 100% | 0% | 3 | Search NOVEL+MATERIALS+AND+TECHNOLOGICAL+ADVANCES+FOR+PHOTONICS | Search NOVEL+MATERIALS+AND+TECHNOLOGICAL+ADVANCES+FOR+PHOTONICS |
7 | GASB SINGLE CRYSTALS | 2 | 67% | 0% | 2 | Search GASB+SINGLE+CRYSTALS | Search GASB+SINGLE+CRYSTALS |
8 | III V ANTIMONIDES | 2 | 67% | 0% | 2 | Search III+V+ANTIMONIDES | Search III+V+ANTIMONIDES |
9 | III V SEMICONDUCTORS GROWTH | 2 | 67% | 0% | 2 | Search III+V+SEMICONDUCTORS+GROWTH | Search III+V+SEMICONDUCTORS+GROWTH |
10 | INGAASSB SEMICONDUCTORS | 2 | 67% | 0% | 2 | Search INGAASSB+SEMICONDUCTORS | Search INGAASSB+SEMICONDUCTORS |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | GALLIUM ANTIMONIDE | 115 | 58% | 12% | 134 |
2 | GASB | 30 | 18% | 14% | 154 |
3 | SB RICH SOLUTIONS | 21 | 73% | 1% | 16 |
4 | ALGASB | 17 | 100% | 1% | 8 |
5 | GAINASSB | 16 | 37% | 3% | 36 |
6 | UNDOPED GALLIUM ANTIMONIDE | 15 | 88% | 1% | 7 |
7 | P N PHOTODIODES | 12 | 86% | 1% | 6 |
8 | GA096AL004SB | 11 | 100% | 1% | 6 |
9 | HIGH QUALITY GASB | 8 | 75% | 1% | 6 |
10 | ALGAASSB | 8 | 40% | 1% | 16 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
GALLIUM ANTIMONIDE DEVICE RELATED PROPERTIES | 1993 | 152 | 95 | 52% |
The metal-organic chemical vapor deposition and properties of III-V antimony-based semiconductor materials | 2002 | 62 | 194 | 34% |
On the structured imperfections of bulk GaSb using high resolution transmission electron microscopy | 2009 | 2 | 4 | 75% |
The physics and technology of gallium antimonide: An emerging optoelectronic material | 1997 | 1 | 217 | 63% |
ETCH-PIT STUDIES IN ALKALI-HALIDE CRYSTALS | 1984 | 1 | 2 | 100% |
TERNARY AIIIBV-ANTIMONIDES | 1984 | 4 | 27 | 67% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | UNIDAD PUEBLA | 4 | 67% | 0.4% | 4 |
2 | ELE MONTPELLIER CNRS URA 391 | 2 | 67% | 0.2% | 2 |
3 | PROGRAM FIS JURUSAN | 1 | 100% | 0.2% | 2 |
4 | AGREGATS MOLEC MAT INORGAN | 1 | 50% | 0.1% | 1 |
5 | PHOTOTHERMAL NABEUL | 1 | 50% | 0.1% | 1 |
6 | RADIO ENGN ELE ON | 1 | 50% | 0.1% | 1 |
7 | ELE OOPT BRANCH | 1 | 25% | 0.2% | 2 |
8 | DIPARTIMENTO FIS VOLTA | 0 | 33% | 0.1% | 1 |
9 | MICROPHYS S | 0 | 33% | 0.1% | 1 |
10 | DAVID SARNOFF | 0 | 25% | 0.1% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000229761 | ADV MAT PHOTON GRP//MICROPHOTON BRANCH//ANTIMONIDE BASED LASERS |
2 | 0.0000166875 | SEMICOND PHYS NANOSTRUCT//MELT EPITAXY//INSB |
3 | 0.0000157455 | INAS GASB//INFRARED SENSORS//QUANTUM DEVICES |
4 | 0.0000098328 | AMORPHOUS III V SEMICONDUCTORS//GAAS1 XNX THIN FILMS//SUNAG |
5 | 0.0000093119 | ELECTROEPITAXY//MICROCHANNEL EPITAXY//LIQUID PHASE ELECTROEPITAXY |
6 | 0.0000091654 | PHOTON RECYCLING//SEMICONDUCTOR SCINTILLATORS//FSF |
7 | 0.0000082089 | GAASSB//PHOTON INFORMAT ENGN//NON MARKOVIAN GAIN MODEL |
8 | 0.0000076552 | IN082GA018AS//SHORT WAVELENGTH INFRARED//INFRARED IMAGING MAT DETECTORS |
9 | 0.0000076028 | AL SB//ALSB//BILAYER MIXING |
10 | 0.0000070558 | ACCELERATED CRUCIBLE ROTATION TECHNIQUE//DETACHED SOLIDIFICATION//ACRT |