Class information for:
Level 1: NI GERMANIDE//MBE//GERMANIUM GE

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
9232 1106 23.2 70%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
769 11658 SIGE//GERMANIUM//STRAINED SI

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 NI GERMANIDE Author keyword 24 91% 1% 10
2 MBE Address 17 35% 4% 39
3 GERMANIUM GE Author keyword 13 38% 2% 26
4 ELECT TELECOMMUN PLICAT Address 12 86% 1% 6
5 GE MOS Author keyword 11 69% 1% 9
6 GE MOSFET Author keyword 11 69% 1% 9
7 NIGE Author keyword 9 59% 1% 10
8 GERMANIUM ON INSULATOR GEOI Author keyword 8 56% 1% 10
9 GE MIS Author keyword 8 100% 0% 5
10 GEOI Author keyword 6 44% 1% 11

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 NI GERMANIDE 24 91% 1% 10 Search NI+GERMANIDE Search NI+GERMANIDE
2 GERMANIUM GE 13 38% 2% 26 Search GERMANIUM+GE Search GERMANIUM+GE
3 GE MOS 11 69% 1% 9 Search GE+MOS Search GE+MOS
4 GE MOSFET 11 69% 1% 9 Search GE+MOSFET Search GE+MOSFET
5 NIGE 9 59% 1% 10 Search NIGE Search NIGE
6 GERMANIUM ON INSULATOR GEOI 8 56% 1% 10 Search GERMANIUM+ON+INSULATOR+GEOI Search GERMANIUM+ON+INSULATOR+GEOI
7 GE MIS 8 100% 0% 5 Search GE+MIS Search GE+MIS
8 GEOI 6 44% 1% 11 Search GEOI Search GEOI
9 INTERFACE STATE DENSITY EXTRACTION 6 100% 0% 4 Search INTERFACE+STATE+DENSITY+EXTRACTION Search INTERFACE+STATE+DENSITY+EXTRACTION
10 SUBSTOICHIOMETRIC OXIDES 6 100% 0% 4 Search SUBSTOICHIOMETRIC+OXIDES Search SUBSTOICHIOMETRIC+OXIDES

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 NICKEL GERMANIDE 24 91% 1% 10
2 GE100 19 26% 6% 62
3 GERMANIUM MOS CAPACITORS 14 100% 1% 7
4 ON SI SUBSTRATE 9 83% 0% 5
5 MOS DIELECTRICS 8 70% 1% 7
6 HIGH KAPPA GATE 8 75% 1% 6
7 GERMANIUM MOSFETS 8 60% 1% 9
8 GE3N4 DIELECTRICS 8 100% 0% 5
9 PMOSFETS 6 17% 3% 32
10 GE100 SURFACES 5 44% 1% 8

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Germanium surface passivation and atomic layer deposition of high-k dielectrics-a tutorial review on Ge-based MOS capacitors 2012 24 100 87%
Academic and industry research progress in germanium nanodevices 2011 109 24 33%
High-k/Ge MOSFETs for future nanoelectronics 2008 217 62 44%
Nanoscale germanium MOS dielectrics - Part I: Germanium oxynitrides 2006 81 18 89%
Challenges and opportunities in advanced Ge pMOSFETs 2012 17 91 46%
Germanium Based Field-Effect Transistors: Challenges and Opportunities 2014 3 137 45%
Nanoscale germanium MOS dielectrics - Part II: High-kappa gate dielectrics 2006 67 20 65%
Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs 2015 0 25 64%
Metal-HfO2-Ge capacitor: Its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO2 layer 2015 0 11 45%
APPLICATIONS OF OXIDES AND NITRIDES OF GERMANIUM FOR SEMICONDUCTOR-DEVICES 1985 2 10 30%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 MBE 17 35% 3.5% 39
2 ELECT TELECOMMUN PLICAT 12 86% 0.5% 6
3 PAUL G ALLEN INTEGRATED SYST 4 67% 0.4% 4
4 ELE OMACHINE ARCHITECTURE ENGN 3 100% 0.3% 3
5 AIR LIQUIDE KOREA CO 2 67% 0.2% 2
6 NAZL MDM 2 19% 0.8% 9
7 ADSEL 2 36% 0.4% 4
8 ESAT INSYS 2 17% 0.8% 9
9 ELECT TELECOMS PLICAT 1 100% 0.2% 2
10 INFORMAT SYST ELECT ENGN 1 100% 0.2% 2

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000218885 ELECT MAT DEVICES NANOSTRUCT//L DLTS//CNR IMM MATIS
2 0.0000169574 GESN//L NESS//GERMANIUM TIN
3 0.0000166732 GAAS MOSFET//INTERFACE CONTROL LAYER//III V MOSFET
4 0.0000112816 HFO2//HIGH K//METAL GATE
5 0.0000105984 SCHOTTKY BARRIER SB//DOPANT SEGREGATION DS//SCHOTTKY BARRIER SB MOSFET
6 0.0000084234 STRAINED SI//SIGE//STRAINED SILICON
7 0.0000074986 EPITAXIAL OXIDES//S UNICAT//SI001 SUBSTRATES
8 0.0000051840 NETWORK COMPUTAT NANOTECHNOL//QUASI BALLISTIC TRANSPORT//JOURNAL OF COMPUTATIONAL ELECTRONICS
9 0.0000048274 INDIUM PHOSPHIDE100//INTERACTION IONS MATTER//SIMULATION METHOD TRIM
10 0.0000043407 CAPACITORLESS DRAM//1T DRAM//CAPACITORLESS 1T DRAM